BFP842ESD Data Sheet (1.3 MB, EN)

BFP842ESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.1, 2013-04-11
RF & Protection Devices
Edition 2013-04-11
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BFP842ESD
BFP842ESD, Robust Low Noise Silicon Germanium Bipolar RF Transistor
Revision History: 2013-04-11, Revision 1.1
Page
Subjects (major changes since last revision)
This data sheet replaces the revision from 2012-08-03.
P. 8
Item about AEC-Q101 added to feature list, minor changes.
P. 27
Picture for marking description updated.
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 1.1, 2013-04-11
BFP842ESD
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
5.1
5.2
5.3
5.4
5.5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
7
Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
4
11
11
11
12
15
18
Revision 1.1, 2013-04-11
BFP842ESD
List of Figures
List of Figures
Figure 4-1
Figure 5-1
Figure 5-2
Figure 5-3
Figure 5-4
Figure 5-5
Figure 5-6
Figure 5-7
Figure 5-8
Figure 5-9
Figure 5-10
Figure 5-11
Figure 5-12
Figure 5-13
Figure 5-14
Figure 5-15
Figure 5-16
Figure 5-17
Figure 5-18
Figure 5-19
Figure 5-20
Figure 5-21
Figure 7-1
Figure 7-2
Figure 7-3
Figure 7-4
Data Sheet
Total Power Dissipation Ptot = f (TS). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BFP842ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . .
DC Current Gain hFE = f (IC), VCE = 2.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2.5 V . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2.5 V . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2.5 V . . . . . . . . . . . . . . . . . . .
Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters . . . . . . . . .
3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 3.5 GHz . . . . . .
Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 3.5 GHz . . . . . . . . . .
Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gain Gma,Gms, |S21|2 = f (f), VCE = 2.5 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (IC), VCE = 2.5 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Input Reflection Coefficient S11 = f (f), VCE = 2.5 V, IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . .
Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 2.5 V, IC = 5 / 10 / 15 mA . . . . . .
Input Reflection Coefficient S11 = f (f), VCE = 2.5 V, IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . .
Output Reflection Coefficient S22 = f (f), VCE = 2.5 V, IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (f), VCE = 2.5 V, IC = 5 / 10 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (IC), VCE = 2.5 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Noise Figure NF50 = f (IC), VCE = 2.5 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Marking Description (Marking BFP842ESD: T9s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tape dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
10
12
15
15
16
16
17
18
18
19
19
20
20
21
21
22
22
23
23
24
24
25
27
27
27
27
Revision 1.1, 2013-04-11
BFP842ESD
List of Tables
List of Tables
Table 3-1
Table 4-1
Table 5-1
Table 5-2
Table 5-3
Table 5-4
Table 5-5
Table 5-6
Table 5-7
Table 5-8
Table 5-9
Data Sheet
Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
AC Characteristics, VCE = 2.5 V, f = 0.45 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
AC Characteristics, VCE = 2.5 V, f = 0.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 2.5 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 2.5 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 2.5 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 2.5 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 2.5 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6
Revision 1.1, 2013-04-11
BFP842ESD
Product Brief
1
Product Brief
The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5
GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon.
The BFP842ESD provides inherently good input power match as well as inherently good noise match between
2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the
input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the
application. Integrated protection elements at in- and output make the device robust against ESD and excessive
RF input power.
The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use industry
standard package with visible leads.
Data Sheet
7
Revision 1.1, 2013-04-11
BFP842ESD
Features
2
•
•
•
•
•
•
•
•
•
Features
Robust very low noise amplifier based on Infineon´s reliable, high
volume SiGe:C technology
Unique combination of high-end RF performance and robustness:
16 dBm maximum RF input power, 1 kV HBM ESD hardness
High linearity OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA
High transition frequency fT = 60 GHz enables very low noise
figure at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA
Transducer gain |S21|2 = 16 dB @ 3.5 GHz, 2.5 V, 15 mA
Ideal for low voltage applications e.g. VCC = 1.8 V and 2.85 V
(3.3 V, 3.6 V requires corresponding collector resistor)
Low power consumption, ideal for mobile applications
Easy to use Pb free (RoHS compliant) and halogen free industry
standard package with visible leads
Qualification report according to AEC-Q101 available
3
2
4
1
SOT343
Applications
As very low noise amplifier (LNA) in
•
•
•
•
•
Mobile and fixed connectivity applications: WLAN 802.11b/g/n, WiMAX 2.5/3.5 GHz, Bluetooth
Satellite communication systems: GNSS Navigation systems (GPS, GLONASS, COMPASS/Beidu/Galileo)
Satellite radio (SDARs, DAB and C-band LNB)
and C-band LNB (1st and 2nd stage LNA)
Multimedia applications such as mobile/portable TV, Mobile TV, FM Radio
3G/4G UMTS/LTE mobile phone applications
ISM applications like RKE, AMR and Zigbee
As discrete active mixer, buffer amplifier in VCOs
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
Package
BFP842ESD
SOT343
Data Sheet
Pin Configuration
1=B
2=E
8
3=C
Marking
4=E
T9s
Revision 1.1, 2013-04-11
BFP842ESD
Maximum Ratings
3
Maximum Ratings
Table 3-1
Maximum Ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
Collector emitter voltage
VCEO
Values
Min.
Max.
–
3.25
2.9
Unit
Note / Test Condition
V
TA = 25 °C
TA = -40 °C
Open base
1)
Collector emitter voltage
VCES
–
3.25
2.9
V
TA = 25 °C
TA = -40 °C
E-B short circuited
2)
Collector base voltage
VCBO
–
4.1
3.5
V
TA = 25 °C
TA = -40 °C
Open emitter
Base current
IB
-5
3
mA
Collector current
IC
–
40
mA
RF input power
PRFin
–
16
dBm
ESD stress pulse
VESD
-1
1
kV
HBM, all pins, acc. to
JESD22-A114
Total power dissipation3)
Ptot
–
120
mW
TS ≤ 111°C
Junction temperature
TJ
–
150
Storage temperature
TStg
-55
150
°C
1) VCES is identical to VCEO due to design
2) VCBO is similar to VCEO due to design
3) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
9
Revision 1.1, 2013-04-11
BFP842ESD
Thermal Characteristics
4
Thermal Characteristics
Table 4-1
Thermal Resistance
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
1)
Junction - soldering point
RthJS
324
K/W
1) For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
140
120
Ptot [mW]
100
80
60
40
20
0
0
25
50
75
TS [°C]
100
125
150
Figure 4-1 Total Power Dissipation Ptot = f (TS)
Data Sheet
10
Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
5
Electrical Characteristics
5.1
DC Characteristics
Table 5-1
DC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
3.25
3.7
Unit
Note / Test Condition
V
IC = 1 mA, IB = 0
Open base
Max.
Collector emitter breakdown voltage
V(BR)CEO
Collector emitter leakage current
ICES
400
nA
VCE = 2 V, VBE = 0
E-B short circuited
Collector base leakage current
ICBO
400
nA
VCB = 2 V, IE = 0
Open emitter
Emitter base leakage current
IEBO
DC current gain
hFE
10
150
260
μA
450
VEB = 0.5 V, IC = 0
Open collector
VCE = 2.5 V, IC = 15 mA
Pulse measured
5.2
General AC Characteristics
Table 5-2
General AC Characteristics at TA = 25 °C
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Transition frequency
fT
57
GHz
VCE = 2.5 V, IC = 25 mA
f = 1 GHz
Collector base capacitance
CCB
64
fF
VCB = 2 V, VBE = 0
f = 1 MHz
Emitter grounded
Collector emitter capacitance
0.46
CCE
pF
VCE = 2 V, VBE= 0
f = 1 MHz
Base grounded
Emitter base capacitance
0.44
CEB
pF
VEB = 0.4 V,VCB = 0
f = 1 MHz
Collector grounded
Data Sheet
11
Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T´s in a 50 Ω system, TA = 25 °C
VC
Top View
Bias -T
OUT
E
C
B
E
VB
Bias-T
(Pin 1)
IN
Figure 5-1 BFP842ESD Testing Circuit
Table 5-3
AC Characteristics, VCE = 2.5 V, f = 0.45 GHz
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
33
29.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.4
26
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
6.5
22
–
–
Data Sheet
Note / Test Condition
IC = 15 mA
IC = 15 mA
dB
IC = 5 mA
IC = 5 mA
dBm
12
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
Table 5-4
AC Characteristics, VCE = 2.5 V, f = 0.9 GHz
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
29
26
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.45
24
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
7
22.5
–
–
Table 5-5
dB
Symbol
Values
Min.
Typ.
Max.
IC = 5 mA
IC = 5 mA
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Unit
Note / Test Condition
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
25.5
23
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.45
21
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
7.5
23.5
–
–
IC = 15 mA
IC = 15 mA
dB
IC = 5 mA
IC = 5 mA
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Unit
Note / Test Condition
AC Characteristics, VCE = 2.5 V, f = 1.9 GHz
Parameter
Symbol
Values
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
23.5
21
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.5
19.5
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
Data Sheet
IC = 15 mA
IC = 15 mA
AC Characteristics, VCE = 2.5 V, f = 1.5 GHz
Parameter
Table 5-6
Note / Test Condition
IC = 15 mA
IC = 15 mA
dB
IC = 5 mA
IC = 5 mA
dBm
OP1dB
OIP3
–
–
8
24.5
13
–
–
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
Table 5-7
AC Characteristics, VCE = 2.5 V, f = 2.4 GHz
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gms
|S21|2
–
–
22
19
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.5
18
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
8
25
–
–
Table 5-8
IC = 15 mA
IC = 15 mA
dB
IC = 5 mA
IC = 5 mA
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Unit
Note / Test Condition
AC Characteristics, VCE = 2.5 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
17.5
16
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.65
15
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
OP1dB
OIP3
–
–
8.5
25.5
–
–
Table 5-9
Note / Test Condition
IC = 15 mA
IC = 15 mA
dB
IC = 5 mA
IC = 5 mA
dBm
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Unit
Note / Test Condition
AC Characteristics, VCE = 2.5 V, f = 5.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Max.
dB
Power Gain
Maximum power gain
Transducer gain
Gma
|S21|2
–
–
12.5
11.5
–
–
Minimum Noise Figure
Minimum noise figure
Associated gain
NFmin
Gass
–
–
0.85
10.5
–
–
Linearity
1 dB compression point at output
3rd order intercept point at output
IC = 15 mA
IC = 15 mA
dB
IC = 5 mA
IC = 5 mA
dBm
OP1dB
OIP3
–
–
8
24
–
–
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Note: OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
14
Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
5.4
Characteristic DC Diagrams
20
75µA
18
65µA
16
55µA
14
45µA
IC [mA]
12
10
35µA
8
25µA
6
15µA
4
5µA
2
0
0
0.5
1
1.5
2
VCE [V]
2.5
3
3.5
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
3
hFE
10
2
10
−2
10
−1
0
10
IC
10
[mA]
1
10
2
10
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 2.5 V
Data Sheet
15
Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
2
10
1
10
0
10
IC [mA]
−1
10
−2
10
−3
10
−4
10
−5
10
0.5
0.6
0.7
VBE [V]
0.8
0.9
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 2.5 V
0
10
−1
10
−2
10
IB [mA]
−3
10
−4
10
−5
10
−6
10
−7
10
0.5
0.6
0.7
VBE [V]
0.8
0.9
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2.5 V
Data Sheet
16
Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
−4
10
−5
10
−6
IB [A]
10
−7
10
−8
10
−9
10
0.5
0.6
0.7
0.8
VEB [V]
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2.5 V
Data Sheet
17
Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
5.5
Characteristic AC Diagrams
60
55
3.00V
50
45
fT [GHz]
40
2.50V
35
30
25
20
2.00V
15
10
1.50V
1.00V
0.50V
5
0
0
5
10
15
20
IC [mA]
25
30
35
40
Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter
30
28
26
24
22
OIP3 [dBm]
20
18
16
2V, 2400MHz
2V, 3500MHz
2.5V, 2400MHz
2.5V, 3500MHz
14
12
10
8
6
4
2
0
0
5
10
15
IC [mA]
20
25
30
Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters
Data Sheet
18
Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
10
11
8
9
4
7
3
6
5
30
12
14 15 16 7 8
1 1 19
20
212
2
3
2
24
25
13
14 15 16 17 1819
20
212
2
6
7
8
9
2 13
10 11 1
20
8
14 15 16 17 1 19
20
21
2 13
11 1
10
15
26
23
24
25
22
IC [mA]
5
25
16
17
18
19
20
23
26
24
4 5
10 1 1
21
1
25
22
1.5
24
23
2
VCE [V]
2.5
3
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 3.5 GHz
−8
−7
−6
−5
30
1
0
−4 −3 2
−
2
5
4
3
6
8
5
2
3
4
9
6
−4
−3
−2
0
1
−1
25
C
10
−1
I [mA]
7
8
20
6
7
0
1
2
3
15
9
5
4
7
8
7
5
10
3
5
6
2
1
0
−1
1
6
5
4
3
2
1
0
−1
1.5
CE
3
2
1
0
2
V
5
4
2.5
4
3
[V]
Figure 5-10 Compression Point at output OP1dB [dBm] = f (IC, VCE), ZS = ZL = 50 Ω, f = 3.5 GHz
Data Sheet
19
Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
0.085
0.08
CCB [pF]
0.075
0.07
0.065
0.06
0.055
0
0.5
1
1.5
VCB [V]
2
2.5
3
8
10
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
36
33
30
Gms
27
G [dB]
24
21
18
Gma
15
2
|S21|
12
9
6
3
0
0
2
4
6
f [GHz]
Figure 5-12 Gain Gma,Gms, |S21|2 = f (f), VCE = 2.5 V, IC = 15 mA
Data Sheet
20
Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
36
0.45GHz
33
30
0.90GHz
27
1.50GHz
Gmax [dB]
24
1.90GHz
21
2.40GHz
18
3.50GHz
15
12
5.50GHz
9
6
3
0
10
20
30
40
50
IC [mA]
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 2.5 V, f = Parameter in GHz
36
33
0.45GHz
30
0.90GHz
27
1.50GHz
1.90GHz
2.40GHz
Gmax [dB]
24
21
18
3.50GHz
15
5.50GHz
12
9
6
3
0.5
1
1.5
2
VCE [V]
2.5
3
3.5
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz
Data Sheet
21
Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
0.03 to 10 GHz
0.1
10
10.0
10.0
0.1
0
9.0
0.2 0.3 0.4 0.5
1 7.0 1.5
5.0 7.0
9.0
4.0
−0.1
2
3
4 5
5.0
4.0
3.0
2.0
0.03
−10
1.0
3.0
−0.2
−5
−4
2.0
1.0
−0.3
−3
−0.4
−0.5
−2
−1.5
5 mA
15 mA
−1
Figure 5-15 Input Reflection Coefficient S11 = f (f), VCE = 2.5 V, IC = 5 / 15 mA
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
3.5
4.0
2.4
1.9
5.0
0.1
0.1
0
0.2 0.3 0.4 0.5
10
1.5
5.5
6.0
2.4
3.5
1
1.50.9
5.5
2
0.9
3
0.5
4 5
0.9
5.5
−0.1
−10
−0.2
−5
−4
−0.3
−3
−0.4
−0.5
−2
−1.5
−1
5 mA
10 mA
15 mA
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 2.5 V, IC = 5 / 10 / 15 mA
Data Sheet
22
Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
0
−5
[dB]
−10
S
11
15mA
−15
5mA
−20
−25
0
1
2
3
4
5
6
f [GHz]
7
8
9
10
Figure 5-17 Input Reflection Coefficient S11 = f (f), VCE = 2.5 V, IC = 5 / 15 mA
1
1.5
0.5
2
0.4
3
0.3
10.0
4
0.2
5
9.0
0.03 to 10 GHz
0.1
10
0.1
0
8.0
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
0.03
0.03
7.0
−0.1
−10
1.0
6.0
−0.2
−5
5.0
4.0
−0.3
−4
1.0
3.0
2.0
−3
−0.4
−0.5
−2
−1.5
−1
5 mA
15 mA
Figure 5-18 Output Reflection Coefficient S22 = f (f), VCE = 2.5 V, IC = 5 / 15 mA
Data Sheet
23
Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
1.4
1.2
15mA
10mA
5mA
NFmin [dB]
1
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
f [GHz]
Figure 5-19 Noise Figure NFmin = f (f), VCE = 2.5 V, IC = 5 / 10 / 15 mA, ZS = Zopt
1.4
1.2
5.5GHz
NFmin [dB]
1
3.5GHz
2.4GHz
0.9GHz
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
12 14
IC [mA]
16
18
20
22
24
Figure 5-20 Noise Figure NFmin = f (IC), VCE = 2.5 V, ZS = Zopt, f = Parameter in GHz
Data Sheet
24
Revision 1.1, 2013-04-11
BFP842ESD
Electrical Characteristics
2
1.8
1.6
NF50 [dB]
1.4
1.2
5.5GHz
1
3.5GHz
2.4GHz
0.9GHz
0.8
0.6
0.4
0.2
0
0
2
4
6
8
10
12 14
IC [mA]
16
18
20
22
24
Figure 5-21 Noise Figure NF50 = f (IC), VCE = 2.5 V, ZS = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25 °C
Data Sheet
25
Revision 1.1, 2013-04-11
BFP842ESD
Simulation Data
6
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website. Please consult our website and download the latest versions before actually starting
your design.
You find the BFP842ESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into
these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the model circuit correspond to the
pin configuration of the device.
The model parameters have been extracted and verified up to 12 GHz using typical devices. The BFP842ESD
SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE
GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
Data Sheet
26
Revision 1.1, 2013-04-11
BFP842ESD
Package Information SOT343
7
Package Information SOT343
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
2
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
0.3 +0.1
-0.05
4x
0.1 M
+0.1
0.15 -0.05
+0.1
0.6 -0.05
0.2 M A
SOT343-PO V08
Figure 7-1 Package Outline
1.6
0.8
0.6
1.15
0.9
SOT343-FP V08
Figure 7-2 Package Footprint
Date code (YM)
2005, June
56
Type code
XYs
Manufacturer
Pin 1
Figure 7-3 Marking Description (Marking BFP842ESD: T9s)
0.2
2.3
8
4
Pin 1
2.15
1.1
SOT323-TP V02
Figure 7-4 Tape dimensions
Data Sheet
27
Revision 1.1, 2013-04-11
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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