Composite Transistors XN0B301 (XN1B301) Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 5 1.50+0.25 –0.05 2 1 10˚ 1.1+0.2 –0.1 • 2SB0709A (2SB709A) + 2SD0601A (2SD601A) Parameter Tr2 Overall Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −100 mA Peak collector current ICP −200 mA Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 100 mA Peak collector current ICP 200 mA Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C Tr1 0.65±0.15 0.30+0.10 –0.05 ■ Basic Part Number 2.8+0.2 –0.3 4 5˚ 3 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 1.1+0.3 –0.1 ■ Features 0.16+0.10 –0.06 0.4±0.2 For general amplification 1: Collector (Tr1) 2: Collector (Tr2) 3: Emitter (Tr2) EIAJ: SC-74A 4: Base (Tr2) Emitter (Tr1) 5: Base (Tr1) Mini5-G1 Package Marking Symbol: 4Q Internal Connection 3 4 5 Tr2 Tr1 2 1 Note) The part number in the parenthesis shows conventional part number. Publication date: December 2003 SJJ00117CED 1 XN0B301 ■ Electrical Characteristics Ta = 25°C ± 3°C • Tr1 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −100 µA hFE VCE = −10 V, IC = −2 mA 460 − 0.5 V Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ Unit V 160 IC = −100 mA, IB = −10 mA Max − 0.3 VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. • Tr2 Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA Collector-emitter saturation voltage VCE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ Max Unit V 160 0.1 µA 100 µA 460 IC = 100 mA, IB = 10 mA 0.1 VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz VCB = 10 V, IE = 0, f = 1 MHz 3.5 pF 0.3 V Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart PT Ta Total power dissipation PT (mW) 500 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (°C) 2 SJJ00117CED XN0B301 Characteristics charts of Tr1 IC VCE IC I B −160 Ta = 25°C −140 IB = −300 µA −80 −250 µA −200 µA −60 −150 µA −40 −100 µA −20 −50 µA −100 −80 −60 −40 −20 −2 0 −4 −6 −8 −10 Collector-emitter voltage VCE 0 −12 0 Collector current IC (mA) Ta = 75°C −25°C Collector-emitter saturation voltage VCE(sat) (V) 25°C − 0.2 − 0.4 − 0.6 − 0.8 −1.0 −40 −20 − 0.4 −1.0 0 − 0.2 −10 − 0.6 − 0.8 −1.0 Ta = 75°C 25°C −25°C Base-emitter voltage VBE (V) −10 −102 Collector current IC (mA) − 0.6 − 0.8 hFE IC 600 IC / IB = 10 −1 −10−3 −1 − 0.4 Base-emitter voltage VBE (V) −10−2 − 0.2 −1.5 0 −1.2 −10−1 −60 0 −2.0 VCE(sat) IC −100 0 −2.5 Base current IB (mA) (V) VCE = −10 V −80 −3.0 − 0.5 IC VBE −120 VCE = −10 V Ta = 25°C −3.5 Forward current transfer ratio hFE 0 VCE = −10 V Ta = 25°C −120 Collector current IC (mA) Collector current IC (mA) −100 IB VBE −4.0 Base current IB (mA) −120 −103 VCE = −10 V 500 Ta = 75°C 400 25°C 300 −25°C 200 100 0 −10−1 −1 −10 −102 −103 Collector current IC (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 10 f = 1 MHz Ta = 25°C 1 0 −10 −20 −30 −40 Collector-base voltage VCB (V) SJJ00117CED 3 XN0B301 Characteristics charts of Tr2 IC VCE 50 IC I B 160 IB = 160 µA Ta = 25°C VCE = 10 V Ta = 25°C 140 40 120 µA 100 µA 30 80 µA 20 60 µA 40 µA 100 80 60 4 6 8 10 20 0 12 0 Collector-emitter voltage VCE (V) Collector current IC (mA) Ta = 75°C −25°C 60 40 20 0 0.2 0.4 0.6 0.8 1.0 Base-emitter voltage VBE (V) Collector-emitter saturation voltage VCE(sat) (V) 25°C 100 0 0.6 0.8 10 Ta = 75°C −25°C 10−2 10−3 1 10 102 Collector current IC (mA) 20 30 40 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector-base voltage VCB (V) 4 SJJ00117CED 0.2 0.4 0.6 0.8 hFE IC 25°C 10−1 1 10 0 Base-emitter voltage VBE (V) 1 f = 1 MHz Ta = 25°C 0 0 1.2 400 IC / IB = 10 Cob VCB 10 1.0 VCE(sat) IC VCE = 10 V 80 0.4 Base current IB (mA) IC VBE 120 0.2 Forward current transfer ratio hFE 2 4 2 20 µA 0 6 40 10 0 VCE = 10 V Ta = 25°C 8 120 Base current IB (mA) Collector current IC (mA) Collector current IC (mA) 140 µA IB VBE 10 103 VCE = 10 V Ta = 75°C 320 25°C 240 −25°C 160 80 0 1 10 102 Collector current IC (mA) 103 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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