elm14411aa

Single P-channel MOSFET
ELM14411AA-N
■General description
■Features
ELM14411AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-8A (Vgs=-10V)
Rds(on) < 32mΩ (Vgs=-10V)
Rds(on) < 55mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±20
V
Symbol
Vds
Vgs
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
-8.0
-6.6
-40
Id
Idm
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
Pd
Tj, Tstg
3.0
2.1
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Symbol
t≤10s
Steady-state
Rθja
Maximum junction-to-lead
Steady-state
Rθjl
■Pin configuration
Typ.
24
54
Max.
40
75
Unit
°C/W
°C/W
Note
21
30
°C/W
3
1
■Circuit
SOP-8(TOP VIEW)
Pin No.
Pin name
1
2
3
SOURCE
SOURCE
SOURCE
1
8
2
7
3
6
4
5
GATE
DRAIN
4
5
6
DRAIN
7
8
DRAIN
DRAIN
4-1
D
G
S
Single P-channel MOSFET
ELM14411AA-N
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-24V
Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vgs=-10V
Rds(on) Id=-8A
Ta=125°C
Vgs=-4.5V, Id=-5A
Gfs Vds=-5V, Id=-8A
Vsd
-1
-5
μA
±100
nA
Is=-1A, Vgs=0V
-1.2
-40
-2.0
-2.4
V
A
24.5
32.0
33.0
41.0
14.5
55.0
mΩ
S
-0.76
-1.00
V
-4.2
A
1120
pF
pF
Is
Ciss
Coss
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (10V)
Crss
Rg
Qg
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
V
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
Input capacitance
Output capacitance
Total gate charge (4.5V)
Gate-source charge
-30
Vgs=0V, Vds=-15V, f=1MHz
920
190
Vgs=0V, Vds=0V, f=1MHz
122
3.6
Vgs=-10V, Vds=-15V
Id=-8A
18.4
9.3
2.7
5.0
23.0
11.5
mΩ
pF
Ω
nC
nC
nC
4.9
7.1
nC
ns
Vgs=-10V, Vds=-15V
3.4
ns
td(off) RL=1.8Ω, Rgen=3Ω
tf
trr
If=-8A, dIf/dt=100A/μs
18.9
8.4
21.5
ns
ns
ns
Qrr
If=-8A, dIf/dt=100A/μs
NOTE :
12.5
27.0
nC
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single P-channel MOSFET
ELM14411AA-N
■Typical electrical and thermal characteristics
30
-10V
25
-6V
-5V
Vds=-5V
25
20
20
-4V
-Id(A)
-Id (A)
30
-4.5V
15
-3.5V
10
5
15
10
125°C
5
Vgs=-3V
0
25°C
0
0
1
2
3
4
5
0
0.5
60
2
2.5
3
3.5
4
4.5
5
Id=-7.5A
Normalized On-Resistance
50
Rds(on) (m� )
1.5
1.60
55
Vgs=-4.5V
1.40
45
40
Vgs=-10V
1.20
35
30
25
Vgs=-4.5V
1.00
Vgs=-10V
20
15
0.80
10
0
5
10
15
20
0
25
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
1.0E+01
70
1.0E+00
Id=-7.5A
60
1.0E-01
50
125°C
40
125°C
1.0E-02
-Is (A)
Rds(on) (m� )
1
-Vgs(Volts)
Figure 2: Transfer Characteristics
-Vds (Volts)
Fig 1: On-Region Characteristics
1.0E-03
30
1.0E-04
25°C
20
25°C
1.0E-05
10
1.0E-06
0
3
4
5
6
7
8
9
10
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
0.0
0.2
0.4
0.6
0.8
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
1.0
Single P-channel MOSFET
ELM14411AA-N
10
1250
Capacitance (pF)
8
-Vgs (Volts)
1500
Vds=-15V
Id=-8A
6
4
2
Ciss
1000
750
500
Coss
250
0
0
4
8
12
16
0
20
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
Tj(max)=150°C, Ta=25°C
1ms
10ms
1.0
1s
10s
1
25
30
Tj(max)=150°C
Ta=25°C
20
10
-Vds (Volts)
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
10
20
DC
0.1
0.1
15
30
100�s
0.1s
10
40
10�s
Rds(on)
limited
10.0
5
-Vds (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-Id (Amps)
100.0
Z�ja Normalized Transient
Thermal Resistance
Crss
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=40°C/W
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
T
1
10
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
4-4
100
1000
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