elm36405ea

Single P-channel MOSFET
ELM36405EA-S
■General description
■Features
ELM36405EA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
•
Vds=-20V
Id=-5A
Rds(on) < 44mΩ (Vgs=-4.5V)
Rds(on) < 70mΩ (Vgs=-2.5V)
Rds(on) < 100mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
-20
V
Gate-source voltage
Vgs
±12
-5
V
Ta=25°C
Continuous drain current
Id
Ta=70°C
Pulsed drain current
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
A
-4
-20
2.0
A
3
W
1.4
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol
Typ.
Max.
Unit
Maximum junction-to-ambient
Maximum junction-to-ambient
t≤5s
Steady-state
Rθja
62.5
110.0
°C/W
°C/W
Maximum junction-to-lead
Steady-state
Rθjl
50.0
°C/W
■Pin configuration
■Circuit
SOT-26(TOP VIEW)
6
1
5
2
Note
4
3
D
Pin No.
1
Pin name
DRAIN
2
3
DRAIN
GATE
4
5
6
SOURCE
DRAIN
DRAIN
4-1
G
S
Single P-channel MOSFET
ELM36405EA-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Vgs=0V, Id=-250μA
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Condition
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
-20
V
Vds=-16V, Vgs=0V
-1
Vds=-16V, Vgs=0V, Ta=125°C
-10
Vds=0V, Vgs=±12V
μA
±100
nA
-0.45 -0.80 -1.20
-20
V
A
Vgs=-4.5V, Id=-5A
37
44
mΩ
Rds(on) Vgs=-2.5V, Id=-4A
55
70
mΩ
1
75
14
100
mΩ
S
1
-1
V
1
-3
-6
A
A
3
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-10V, Vds=-5V
1
Forward transconductance
Gfs
Vgs=-1.8V, Id=-2A
Vds=-5V, Id=-5A
Diode forward voltage
Vsd
Is=-1A, Vgs=0V
Max. body-diode continuous current
Pulsed body-diode current
DYNAMIC PARAMETERS
Is
Ism
Input capacitance
Output capacitance
Ciss
Coss Vgs=0V, Vds=-10V, f=1MHz
1100
170
pF
pF
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
140
pF
12.5
nC
2
Gate-source charge
Gate-drain charge
Qgs
Qgd
2.1
3.5
nC
nC
2
2
Turn-on delay time
Turn-on rise time
td(on)
7
ns
2
10
ns
2
30
22
ns
ns
2
2
20
nC
Qg
tr
Vgs=-4.5V, Vds=-10V
Id=-5A
Vgs=-4.5V, Vds=-10V
Turn-off delay time
td(off) Id=-1A, Rgen=3Ω
Turn-off fall time
tf
Body diode reverse recovery charge
Qrr
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
Single P-channel MOSFET
NIKO-SEM
P4402FAG
P-Channel Logic Level Enhancement
ELM36405EA-S
Mode Field Effect Transistor
■Typical electrical and thermal characteristics
On-Region Variation With
Drain Current and Gate Voltage.
On-Region Characteristics.
3
VGS=-4.5V
-3.0V
-3.5V
12
RDS(ON), Normalized
Drain-Source On-Resistance
-ID, Drain Current(A)
15
-2.5V
6
-2.0V
0
0.5
1
1.5
2
-2.5V
2
1
0.5
2.5
-VGS, Drain-Source Voltage(V)
On-Region Variation With
Temperature.
VGS=-4.5V
1.3
1.2
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
0
3
100
125
15
ID=-2.5A
0.12
0.1
TA=125°
0.08
0.06
TA=25°
0.04
0.02
1.5
150
2
2.5
3
4
3.5
4.5
5
-VSD, Gate To Source Voltage(V)
Body Diode Forward Voltage Variation
With Source Current and Temperature.
Transfer Characteristics.
10
-IS, Reverse Drain Current(A)
VDS=-5.0V
8
TA=-55°C
-ID(A)
12
9
-ID, Drain Current(A)
0.14
TJ, Junction Temperature(C°)
10
6
-4.0V
On-Region Variation WithGate-to Source Voltage.
ID=-5A
1.4
-4.5V
0.18
RDS(ON),On-Resistance(OHM)
RDS(ON), Normalized
Drain-Source On-Resistance
1.5
-3.0V
-3.5V
1.5
3
0
VGS=-2.0V
2.5
9
TSOP-6
Lead-Free
25°C
6
125°C
4
2
0
0.5
1
1.5
TA=125°
25° C
0.1
-55° C
0.01
0.001
0.0001
0
VGS=0V
1
2
-VGS(Volts)
3
4-3
0
0.2
0.4
0.6
0.8
1
-VSD, Body Diode Forward Voltage(V)
1.2
Aug-03-2006
Single P-channel MOSFET
P4402FAG
Level Enhancement
NIKO-SEM P-Channel Logic
ELM36405EA-S
TSOP-6
Lead-Free
Mode Field Effect Transistor
Gate Charge Characteristics.
5
f=1MHz
ID=-5A
VDS=-5.0V
Capacitance(pF)
VGS, Gate-Source Voltage(V)
Capacitance Characteristics.
2000
4
-10V
-15V
3
2
1600
1200
800
Coss
1
400
0
0
0
3
6
9
12
15
18
Crss
0
5
10
Maxmum Safe Operating Area.
P(pk), Peak Transient Power(W)
100� s
1ms
10
10ms
100ms
1
0.1
10s
DC
1s
VGS =-4.5V
SINGLE PULSE
R� JA=156°C/W
TA=25°C
0.01
0.1
10
1
20
Sing Pulse Maximum Power Dissipation.
5
100
RDS(ON) LIMIT
15
-VGS(Volts)
Qg Gate Charge (nC)
SINGLE PULSE
R� JA=156°C/W
TA=25°C
4
3
2
1
0
100
0.1
1
-VGS,Drain-Source Voltage(V)
10
100
1000
t1,Time(SEC)
Transisent Thermal Response Curve.
1
D=0.5
0.2
0.1
R¿ JA(t) = r(t) + R¿
R¿ JA=156°C/W
0.1
0.05
0.02
0.01
��
P(pk)
r(t), Normalized Effective
Transient Thermal Resistance
-ID,Drain Current(A)
VGS=0V
Ciss
0.01
t1
Single Pulse
t2
TJ-TA=P*R¿ JA(t)
Duty Cycle, D= t1/ t2
0.001
0.0001
0.001
0.01
0.1
t1,Time(SEC)
4
4-4
1
10
100
300
Aug-03-2006
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