elm17401fa

Single P-channel MOSFET
ELM17401FA-S
■General description
■Features
ELM17401FA-S uses advanced trench technology
to provide excellent Rds(on), low gate charge and
operation with gate voltages as low as 2.5V.
•
•
•
•
•
Vds=-30V
Id=-1.2A (Vgs=-10V)
Rds(on) < 150mΩ (Vgs=-10V)
Rds(on) < 200mΩ (Vgs=-4.5V)
Rds(on) < 280mΩ (Vgs=-2.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Gate-source voltage
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
±12
V
Symbol
Vds
Vgs
Ta=25°C
Continuous drain current
-1.2
Id
Ta=70°C
Pulsed drain current
-1.0
Idm
Tc=25°C
Power dissipation
Pd
Tc=70°C
Junction and storage temperature range
Tj, Tstg
-10
0.35
0.22
-55 to 150
A
1
A
2
W
1
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Maximum junction-to-ambient
Maximum junction-to-lead
Symbol
t≤10s
Steady-state
Steady-state
Rθja
Rθjl
■Pin configuration
Typ.
Max.
Unit
300
350
280
360
425
320
°C/W
°C/W
°C/W
1
2
1
3
■Circuit
SC-70(TOP VIEW)
3
Note
D
Pin No.
1
Pin name
GATE
2
3
SOURCE
DRAIN
G
S
4-1
Single P-channel MOSFET
ELM17401FA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-24V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Rds(on)
-0.6
-10
Vgs=-10V
Id=-1.2A
Ta=125°C
Vgs=-4.5V, Id=-1.2A
Vgs=-2.5V, Id=-1A
Gfs
Vds=-5V, Id=-1.2A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
Is=-1A, Vgs=0V
Input capacitance
Ciss
Output capacitance
Reverse transfer capacitance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Coss
Crss
Rg
V
-1
-5
μA
±100
nA
-1.0
-1.4
V
A
122
150
173
147
207
220
200
280
Ta=55°C
Vgs(th) Vds=Vgs, Id=-250μA
Id(on) Vgs=-4.5V, Vds=-5V
Forward transconductance
3.0
4.5
-0.85
mΩ
S
-1.00
-0.5
V
A
409
pF
55
42
12
pF
pF
Ω
5.06
0.72
nC
nC
1.58
6.2
nC
ns
Vgs=-10V, Vds=-15V
3.2
ns
td(off) RL=15Ω, Rgen=3Ω
tf
trr
If=-1A, dIf/dt=100A/μs
41.2
14.5
13.2
ns
ns
ns
5.4
nC
Gate-source charge
Qg
Qgs
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
-30
Qrr
Vgs=0V, Vds=-15V, f=1MHz
Vgs=0V, Vds=0V, f=1MHz
Vgs=-4.5V, Vds=-15V
Id=-1A
If=-1A, dIf/dt=100A/μs
NOTE :
1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment
with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is
based on the t ≤ 10s themal resistance rating.
2. Repetitive rating, pulse width limited by junction temperature.
3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient.
4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max.
5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment
with Ta=25°C. The SOA curve provides a single pulse rating.
4-2
Single P-channel MOSFET
ELM17401FA-S
■Typical electrical and thermal characteristics
10
10
-5V -4V
Vgs=-3.5V
-10V
8
25°C
Vds=-5V
8
6
-Id (A)
-Id (A)
-3V
-2.5V
4
2
6
125°C
4
2
-2.0V
0
0
0
1
2
3
4
5
0
0.5
300
2
2.5
3
3.5
4
1.8
250
Normalized On-Resistance
Rds(on) (m� )
1.5
-Vgs (Volts)
Figure 2: Transfer Characteristics
-Vds (Volts)
Fig 1: On-Region Characteristics
Vgs=-2.5V
200
Vgs=-4.5V
150
Vgs=-10V
100
0
1
2
3
4
1.6
Vgs=-10V
Vgs=-4.5V
1.4
Vgs=-2.5V
1.2
1
Id=-1A
0.8
5
6
0
25
-Id (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
350
1.0E+01
Id=-1A
300
1.0E+00
1.0E-01
250
125°C
-Is (A)
Rds(on) (m� )
1
200
150
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
25°C
100
1.0E-05
1.0E-06
50
0
2
4
6
8
0.0
10
0.2
0.4
0.6
0.8
1.0
1.2
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
4-3
1.4
Single P-channel MOSFET
ELM17401FA-S
5
500
Capacitance (pF)
4
-Vgs (Volts)
600
Vds=-15V
Id=-1A
3
2
1
Ciss
400
300
200
Coss
0
0
1
2
3
4
0
5
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
100.00
100�s
Power (W)
10ms
25
30
Tj(max)=150°C
Ta=25°C
8
6
4
1s
10s
2
DC
0
0.001
0.01
1
10
100
D=Ton/T
Tj,pk=Ta+Pdm.Z�ja.R�ja
R�ja=360°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5)
-Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note 5)
Z�ja Normalized Transient
Thermal Resistance
20
10
10�s
1ms
0.1s
10
15
12
1.00
0.1
10
14
Rds(on)
limited
0.10
5
-Vds (Volts)
Figure 8: Capacitance Characteristics
Tj(max)=150°C
Ta=25°C
10.00
-Id (Amps)
Crss
100
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
Pd
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4-4
100
1000
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