elm53400ca

Single N-channel MOSFET
ELM53400CA-S
■General description
■Features
ELM53400CA-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
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•
•
•
•
■Maximum absolute ratings
Parameter
Drain-source voltage
Symbol
Vds
Gate-source voltage
Vgs
Ta=25°C
Continuous drain current(Tj=150°C)
Vds=20V
Id=1.8A (Vgs=4.5V)
Rds(on) < 280mΩ (Vgs=4.5V)
Rds(on) < 340mΩ (Vgs=2.5V)
Rds(on) < 750mΩ (Vgs=1.8V)
Ta=25°C. Unless otherwise noted.
Limit
Unit
20
V
±12
1.8
Id
Ta=70°C
Pulsed drain current
Tc=25°C
Tc=70°C
A
1.25
0.80
- 55 to 150
Pd
Junction and storage temperature range
A
1.2
6
Idm
Power dissipation
V
Tj, Tstg
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
Max.
120
■Circuit
D
SOT-23(TOP VIEW)
3
1
2
Unit
°C/W
Pin No.
Pin name
1
2
GATE
SOURCE
3
DRAIN
G
S
5- 1
Single N-channel MOSFET
ELM53400CA-S
■Electrical characteristics
Parameter
Symbol
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
Condition
STATIC PARAMETERS
Drain-source breakdown voltage
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=20V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
0.4
1.8
1
5
μA
±100
nA
1.0
V
A
Vgs=4.5V, Id=1.8A
220
280
Rds(on) Vgs=2.5V, Id=1.5A
Vgs=1.8V, Id=1.2A
Gfs Vds=10V, Id=1.0A
260
540
1
340
750
0.65
1.20
V
1
A
Vsd
Is=1.0A, Vgs=0V
Is
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Crss
Turn-off delay time
Turn-off fall time
V
Ta=85°C
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Input capacitance
Output capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
20
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Vgs=0V, Vds=10V, f=1MHz
Vgs=4.5V, Vds=10V
Id=1.2A
Vgs=4.5V, Vds=10V
RL=20Ω, Id=1.2A
Rgen=1Ω
5- 2
mΩ
S
70
20
pF
pF
8
pF
1.06
1.38
nC
0.18
0.32
18
26
nC
nC
ns
20
70
28
110
ns
ns
25
40
ns
AFN2306A
Alfa-MOS
20V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM53400CA-S
■Typical
electrical and thermal characteristics
Typical
Characteristics
©Alfa-MOS Technology Corp.
Rev.A Oct. 2010
www.alfa-mos.com
Page 3
5- 3
AFN2306A
Alfa-MOS
20V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM53400CA-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.A Oct. 2010
www.alfa-mos.com
Page 4
5- 4
AFN2306A
Alfa-MOS
20V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM53400CA-S
circuit and waveform
Typical■Test
Characteristics
©Alfa-MOS Technology Corp.
Rev.A Oct. 2010
www.alfa-mos.com
5- 5
Page 5
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