elm5b801qa

Dual P-channel MOSFET
ELM5B801QA-N
■General description
■Features
ELM5B801QA-N uses advanced trench
technology to provide excellent Rds(on)
and low gate charge.
•
•
•
•
Vds=-20V
Id=-4.5A, Rds(on)=96mΩ (Vgs=-4.5V)
Id=-3.8A, Rds(on)=128mΩ (Vgs=-2.5V)
Id=-2.5A, Rds(on)=180mΩ (Vgs=-1.8V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
Ta=25°C
Continuous drain current
-20
±12
-4.5
Id
Ta=70°C
Pulsed drain current
Tc=25°C
Tc=70°C
-12
6.5
4.2
Pd
Junction and storage temperature range
A
-3.8
Idm
Power dissipation
V
V
Tj, Tstg
A
W
-55 to 150
°C
■Thermal characteristics
Parameter
Symbol
Maximum junction-to-ambient
Steady-state
Max.
Unit
120
°C/W
Rθja
■Pin configuration
DFN6-2x2(TOP VIEW)
Typ.
■Circuit
Pin No.
Pin name
1
2
3
SOURCE1
GATE1
DRAIN2
4
5
6
SOURCE2
GATE2
DRAIN1
5-1
D2
D1
G2
G1
S1
S2
Dual P-channel MOSFET
ELM5B801QA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=-16V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±12V
Gate threshold voltage
On state drain current
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Input capacitance
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
-20
V
Ta=85°C
Vgs(th) Vds=Vgs, Id=-250μA
Vgs=-4.5V, Vds=-5V
Id(on)
Vgs=-2.5V, Vds=-5V
-0.3
-8
-1
-30
μA
±100
nA
-0.8
V
A
-3
Vgs=-4.5V, Id=-4.5A
86
96
Rds(on) Vgs=-2.5V, Id=-3.8A
Vgs=-1.8V, Id=-2.5A
114
150
128
180
Gfs
Vsd
Vds=-5V, Id=-2.8A
Is=-1.25A, Vgs=0V
6.5
-0.75
Is
Ciss
Output capacitance
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Coss
Crss
Gate-source charge
Qgs
Gate-drain charge
Turn-on delay time
Turn-on rise time
Qgd
td(on)
Turn-off delay time
Turn-off fall time
td(off)
Rgen=1Ω
tf
Qg
tr
Vgs=0V, Vds=-10V, f=1MHz
Vgs=-4.5V, Vds=-10V
Id=-3.5A
Vgs=-4.5V, Vds=-10V
Id=-3.5A, RL=2.85Ω
5-2
mΩ
-1.30
S
V
-1.6
A
375
pF
80
60
pF
pF
5.00
10.00
nC
0.85
nC
1.50
15
25
nC
ns
36
60
ns
25
15
50
25
ns
ns
AFP2911W
Alfa-MOS
20V P-Channel
Technology
Dual P-channel MOSFET
Enhancement Mode MOSFET
ELM5B801QA-N
■Typical
electrical and thermal characteristics
Typical
Characteristics
©Alfa-MOS Technology Corp.
Rev.B Nov. 2011
www.alfa-mos.com
Page 3
5-3
AFP2911W
Alfa-MOS
20V P-Channel
Technology
Dual P-channel MOSFET
Enhancement Mode MOSFET
ELM5B801QA-N
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev.B Nov. 2011
www.alfa-mos.com
Page 4
5-4
AFP2911W
Alfa-MOS
20V P-Channel
Technology
Dual P-channel MOSFET
Enhancement Mode MOSFET
ELM5B801QA-N
■Test circuit
& waveform
Typical
Characteristics
©Alfa-MOS Technology Corp.
Rev.B Nov. 2011
www.alfa-mos.com
Page 5
5-5
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