A-POWER AP4951GM

AP4951GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D2
D2
▼ Low Gate Charge
D1
D1
▼ Fast Switching Performance
SO-8
S1
S2
G1
BVDSS
-60V
RDS(ON)
96mΩ
ID
-3.4A
G2
Description
D2
D1
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G2
G1
S2
S1
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
-60
V
±20
V
3
-3.4
A
3
-2.7
A
-20
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
62.5
℃/W
201108073-1/4
AP4951GM
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.04
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-3.4A
-
-
96
mΩ
VGS=-4.5V, ID=-2.7A
-
-
120
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=-10V, ID=-3.4A
-
3.4
-
S
o
VDS=-60V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-48V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=-3A
-
29.5
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-48V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
7
-
nC
VDS=-30V
-
11
20
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
5
10
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
39
80
ns
tf
Fall Time
RD=30Ω
-
10.5
20
ns
Ciss
Input Capacitance
VGS=0V
-
1320
-
pF
Coss
Output Capacitance
VDS=-25V
-
125
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
95
-
pF
Min.
Typ.
IS=-2.1A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-3A, VGS=0V,
-
39
80
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
64
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP4951GM
40
30
-10V
-7.0V
-5.0V
-4.5V
30
-10V
-7.0V
-5.0V
-4.5V
o
T A =150 C
-ID , Drain Current (A)
-ID , Drain Current (A)
T A =25 o C
20
V G =-3.0V
20
V G =- 3 .0V
10
10
0
0
0
2
4
6
8
0
10
-V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
12
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
100
I D = -2.7A
T A =25 ℃
I D = -3.4A
V G = -10V
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
90
80
1.2
0.8
0.4
70
2
4
6
8
-50
10
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
10.00
1.6
8.00
-IS(A)
o
T j =25 o C
1.4
-VGS(th) (V)
T j =150
C
6.00
4.00
1.2
1
2.00
0.8
0.00
0.6
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP4951GM
f=1.0MHz
10000
12
I D = -3A
V DS = -48V
C iss
1000
C (pF)
-VGS , Gate to Source Voltage (V)
16
8
C oss
C rss
100
4
0
10
0
10
20
30
40
1
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
100us
1ms
1
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
DC
Normalized Thermal Response (R thja)
1
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
V DS = -5V
T j =25 o C
VG
T j =150 o C
-ID , Drain Current (A)
16
QG
-10V
12
QGS
QGD
8
4
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8
7
Millimeters
6
5
E1
1
2
3
E
4
e
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
θ
0
4.00
8.00
1.27 TYP
e
B
A
A1
DETAIL A
L
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number
4951GM
YWWSSS
Package Code
meet Rohs requirement
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
θ