Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9±0.1 1.5 1.0 4.5±0.1 7 0. R 0.85 4.1±0.2 ● 2.4±0.2 2.0±0.2 3.5±0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE = 4000 to 2000. A shunt resistor is omitted from the driver. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 ● 1.0 1.5 R0.9 R0.9 0.4 ■ Features 2.5±0.1 ■ Absolute Maximum Ratings (Ta=25˚C) 3 Parameter Symbol Collector to 2SD1205 base voltage 2SD1205A Collector to 2SD1205 emitter voltage 2SD1205A Ratings 30 VCBO 25 VEBO Peak collector current V 50 2 1 Unit V 60 VCEO Emitter to base voltage 0.45±0.05 1.25±0.05 0.55±0.1 5 V ICP 750 mA Collector current IC 500 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2.5 1:Base 2:Collector 3:Emitter 2.5 EIAJ:SC–71 M Type Mold Package Internal Connection C B ≈200Ω ■ Electrical Characteristics Parameter E (Ta=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 25V, IE = 0 100 nA Emitter cutoff current IEBO VEB = 4V, IC = 0 100 nA VCBO IC = 100µA, IE = 0 VCEO IC = 1mA, IB = 0 Collector to base 2SD1205 voltage 2SD1205A Collector to emitter 2SD1205 voltage 2SD1205A 30 V 60 25 V 50 Emitter to base voltage VEBO IE = 100µA, IC = 0 Forward current transfer ratio hFE*1 VCE = 10V, IC = 500mA*2 5 V Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 0.5mA*2 2.5 V Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 0.5mA*2 3 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 20000 4000 150 MHz *2 *1h FE Pulse measurement Rank classification Rank hFE Q R 4000 ~ 10000 8000 ~ 20000 1 Transistor 2SD1205, 2SD1205A PC — Ta VCE(sat) — IC 400 300 200 100 0 0 20 40 60 80 100 120 140 160 100 IC/IB=1000 30 10 3 25˚C –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 Collector output capacitance Cob (pF) Forward current transfer ratio hFE 3 10 Ta=75˚C –25˚C 103 102 IE=0 f=1MHz Ta=25˚C 7 6 5 4 3 2 1 0 0.1 0.3 1 3 10 1 3 10 30 IC/IB=1000 30 10 25˚C 3 Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 8 25˚C Collector current IC (A) 2 1 Cob — VCB VCE=10V 10 0.01 0.03 0.3 Collector current IC (A) hFE — IC 104 Ta=75˚C 1 Ambient temperature Ta (˚C) 105 VBE(sat) — IC 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) Collector power dissipation PC (mW) 500 100 Collector to base voltage VCB (V) 10