NVJS4151P D

NVJS4151P
Trench Power MOSFET
−20 V, −4.1 A, Single P−Channel, SC−88
Features
• Leading Trench Technology for Low RDS(ON) Extending Battery Life
• SC−88 Small Outline (2x2 mm) for Maximum Circuit Board
•
•
•
Utilization, Same as SC−70−6
Gate Diodes for ESD Protection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) Typ
ID Max
55 mW @ −4.5 V
−20 V
−4.1 A
70 mW @ −2.5 V
180 mW @ −1.8 V
Applications
SC−88 (SOT−363)
• High Side Load Switch
• Cell Phones, Computing, Digital Cameras, MP3s and PDAs
D
1
6
D
D
2
5
D
G
3
4
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage
VGS
±12
V
ID
−3.2
A
Continuous Drain
Current (Note 1)
Steady
State
TA = 25 °C
TA = 85 °C
−2.3
t≤5s
TA = 25 °C
−4.1
Steady
State
TA = 25 °C
PD
1.2
W
tp = 10 ms
IDM
−13
A
TJ,
TSTG
−55 to
150
°C
IS
−0.8
A
TL
260
°C
ESD
4000
V
Symbol
Max
Unit
Junction−to−Ambient – Steady State
RqJA
125
°C/W
Junction−to−Ambient − t ≤ 5 s
RqJA
75
Junction−to−Lead – Steady State
RqJL
45
Power Dissipation
(Note 1)
Pulsed Drain Current
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
Human Body Model (HBM)
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
© Semiconductor Components Industries, LLC, 2014
D
S
6
1
VTY M G
G
SC−88/SOT−363
CASE 419B
1
D
VTY
M
G
D
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
August, 2014 − Rev. 1
MARKING DIAGRAM &
PIN ASSIGNMENT
D
Operating Junction and Storage Temperature
ESD
Top View
1
Device
Package
Shipping†
NVJS4151PT1G
SC−88
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NVJS4151P/D
NVJS4151P
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
−20
VGS = 0 V, ID = −250 mA
VGS = −16 V,
VDS = 0 V
V
−12
mV/°C
TJ = 25°C
−1.0
TJ = 85°C
−5.0
mA
VDS = 0 V, VGS = ±4.5 V
±1.5
mA
VDS = 0 V, VGS = ±12 V
±10
mA
−1.2
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
−0.40
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
VGS = VDS, ID = −250 mA
4.0
Drain−to−Source On Resistance
RDS(on)
VGS = −4.5 V, ID = −2.9 A
55
67
VGS = −2.5 V, ID = −2.4 A
70
85
VGS = −1.8 V, ID = −1.0 A
180
205
VGS = −10 V, ID = −3.3 A
12
S
850
pF
Forward Transconductance
gFS
mV/°C
mW
CHARGES AND CAPACITANCES
CISS
Input Capacitance
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
VGS = 0 V, f = 1.0 MHz,
VDS = −10 V
QG(TOT)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
160
110
nC
10
VGS = −4.5 V, VDS = −10 V,
ID = −3.3 A
1.5
2.8
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
td(ON)
0.85
tr
1.7
td(OFF)
Fall Time
VGS = −4.5 V, VDD = −10 V,
ID = −1.0 A, RG = 6.0 W
tf
ms
2.7
4.2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
Ta
Discharge Time
Tb
Reverse Recovery Charge
VGS = 0 V, IS = −1.3 A,
TJ = 25°C
−0.75
63
VGS = 0 V, dIS/dt = 100
A/ms,
IS = −1.3 A
QRR
−1.2
V
ns
9.0
54
0.23
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NVJS4151P
TYPICAL ELECTRICAL CHARACTERISTICS
5
VDS w −10 V
VGS = −2.4 V
VGS = −2.0 V
3
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
4
VGS = −1.6 V
VGS = −2.8 V to 6.0 V
.
2
VGS = −1.4 V
1
VGS = −1.0 V
0
2
4
6
2
1
0
1
2
3
4
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. On−Region Characteristics
ID = −3.3 A
TJ = 25°C
0.4
0.3
0.2
0.1
0
0
2
4
6
0.6
TJ = 25°C
0.5
0.4
VGS = −1.8 V
0.3
0.2
0.1
VGS = −2.5 V
VGS = −4.5 V
0
1
2
3
4
5
−VGS, GATE−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
100000
1.7
VGS = −4.5 V
ID = −2.9 A
VGS = 0 V
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
3
0
8
0.5
1.5
4
VGS = −1.2 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 25°C
VGS = −1.8 V
TJ = 150°C
10000
1.3
1.1
0.9
1000
100
0.7
−50
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
150
0
4
8
12
16
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
20
NVJS4151P
VGS = 0 V
TJ = 25°C
1000
CISS
750
500
250
0
0
4
8
12
16
5
15
QT
4
VGS
VDS
3
12
9
2
6
Qgs
Qgd
ID = −3.3 A
TJ = 25°C
1
0
0
20
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
1250
−VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL ELECTRICAL CHARACTERISTICS
2
4
6
8
10
3
0
12
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
10000
3
−IS, SOURCE CURRENT (A)
tf
t, TIME (ns)
td(off)
tr
1000
td(on)
100
1
10
100
VGS = 0 V
TJ = 25°C
2.5
2
1.5
1
0.5
0
0.4
0.5
0.6
0.7
0.8
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
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4
0.9
NVJS4151P
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
D
H
A
D
6
5
GAGE
PLANE
4
1
2
L
L2
E1
E
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
ddd
M
A2
A
ccc C
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
b
TOP VIEW
6X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
A1
C
SIDE VIEW
C A-B D
DETAIL A
SEATING
PLANE
END VIEW
c
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
RECOMMENDED
SOLDERING FOOTPRINT*
6X
6X
0.30
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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NVJS4151P/D