NTJD4152P Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 http://onsemi.com Features •Leading Trench Technology for Low RDS(ON) Performance •Small Footprint Package (SC70-6 Equivalent) •ESD Protected Gate •Pb-Free Package is Available V(BR)DSS RDS(on) Typ ID Max 215 mW @ -4.5 V -20 V -0.88 A 345 mW @ -2.5 V Applications •Load/Power Management •Charging Circuits •Load Switching •Cell Phones, Computing, Digital Cameras, MP3s and PDAs 600 mW @ -1.8 V S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS -20 V Gate-to-Source Voltage VGS ±12 V ID -0.88 A Continuous Drain Current (Note 1) Steady State TA = 25°C Power Dissipation (Note 1) Steady State TA = 25°C Continuous Drain Current (Note 2) tv5s TA = 25°C Power Dissipation (Note 2) tv5s TA = 85°C -0.63 PD TA = 85°C W 0.141 ID TA = 85°C TA = 25°C Top View 0.272 -1.0 D1 G2 S2 -0.72 PD TA = 85°C 0.35 W 0.181 ±3.0 A TJ, TSTG -55 to 150 °C Continuous Source Current (Body Diode) IS -0.48 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C t ≤ 10 ms Operating Junction and Storage Temperature Symbol Max Unit RqJA 460 °C/W Junction-to-Ambient - t v 5 s RqJA 357 Junction-to-Lead – Steady State RqJL 226 1 TK M G = Device Code = Date Code = Pb-Free Package ORDERING INFORMATION Device Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces), steady state. 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces), t v 5 s. August, 2007 - Rev. 2 TK MG G CASE 419B STYLE 28 (Note: Microdot may be in either location) Junction-to-Ambient – Steady State © Semiconductor Components Industries, LLC, 2007 1 S1 G1 D2 THERMAL RESISTANCE RATINGS (Note 1) Parameter 6 SC-88/SOT-363 IDM Pulsed Drain Current MARKING DIAGRAM & PIN ASSIGNMENT A 1 Package Shipping NTJD4152PT1 SOT-363 3000 Units/Reel NTJD4152PT1G SOT-363 (Pb-Free) 3000 Units/Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTJD4152/D NTJD4152P ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = -250 mA -20 Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS IGSS VGS = 0 V, VDS = -16 V V TJ = 25°C 1.0 TJ = 125°C 1.0 5.0 VDS = 0 V, VGS = ±4.5 V 0.03 1.0 VDS = 0 V, VGS = ±12 V 6.0 mA mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250 mA Drain-to-Source On Resistance RDS(on) VGS = -4.5 V, ID = -0.88 A 215 260 VGS = -2.5 V, ID = -0.71 A 345 500 VGS = -1.8 V, ID = -0.20 A 600 1000 VDS = -10 V, ID = -0.88 A 3.0 S 155 pF Forward Transconductance gFS -0.45 V mW CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge VGS = 0 V, f = 1.0 MHz, VDS = -20 V 18 QG(TOT) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 25 nC 2.2 VGS = -4.5 V, VDS = -10 V, ID = -0.88 A 0.5 0.65 SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) ns 5.8 VGS = -4.5 V, VDD = -10 V, ID = -0.5 A, RG = 20 W tf 6.5 13.5 3.5 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = -0.48 A 3. Pulse Test: pulse width ≤ 300ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 TJ = 25°C -0.8 TJ = 125°C -0.66 -1.2 V NTJD4152P TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 1 1 TJ = 25°C -2 V -ID, DRAIN CURRENT (AMPS) -ID, DRAIN CURRENT (AMPS) VGS = -4.5, -3.5 & -2.5 V -1.75 V 0.75 0.5 -1.5 V 0.25 -1.25 V -1 V 0 0.4 0 0.8 0.8 0.7 0.6 0.5 0.4 125°C 0.3 0.2 25°C 0.1 TJ = -55°C 0 1.6 1.2 VDS ≥ -20 V 0.9 2 0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 1. On-Region Characteristics 0.3 VGS = -4.5 V TJ = 125°C 0.25 0.2 TJ = 25°C 0.15 TJ = -55°C 0.1 0 0.25 0.5 1 0.75 -ID, DRAIN CURRENT (AMPS) 2.5 TJ = 25°C 2.0 VGS = -1.8 V 1.5 1.0 0.5 0.5 0.6 0.7 0.8 0.9 1 -ID, DRAIN CURRENT (AMPS) 10000 VGS = 0 V ID = -0.88 A VGS = -4.5 V -IDSS, LEAKAGE CURRENT (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS = -4.5 V Figure 4. On-Resistance vs. Drain Current and Gate Voltage 2.0 1.6 1.4 TJ = 150°C 1000 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 VGS = -2.5 V 0 0.4 Figure 3. On-Resistance vs. Drain Current and Temperature 1.8 0.5 1 1.5 2 2.5 3 3.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = 125°C 100 10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) 10 5 15 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage 0 http://onsemi.com 3 20 NTJD4152P -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 350 VDS = 0 V Ciss VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 300 250 Crss 200 150 100 50 Coss 0 10 5 VGS 0 VDS 5 10 15 20 5 QT 4 3 Q1 1 ID = -0.88 A TJ = 25°C 0 0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0.4 0.8 1.2 1.6 Qg, TOTAL GATE CHARGE (nC) 2 Figure 8. Gate-to-Source Voltage vs. Total Gate Charge Figure 7. Capacitance Variation 100 0.5 -IS, SOURCE CURRENT (AMPS) t, TIME (ns) Q2 2 td(off) tr 10 td(on) VDD = -10 V ID = -0.8 A VGS = -4.5 V tf 1 VGS = 0 V TJ = 25°C 0.4 0.3 0.2 0.1 0 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTJD4152P PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. D e MILLIMETERS DIM MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3 0.20 REF b 0.10 0.21 0.30 C 0.10 0.14 0.25 D 1.80 2.00 2.20 E 1.15 1.25 1.35 e 0.65 BSC L 0.10 0.20 0.30 HE 2.00 2.10 2.20 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 A3 6 5 4 HE C -E1 2 3 L b 6 PL 0.2 (0.008) M E M A INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 SOLDERING FOOTPRINT* A1 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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