IRFI1010N Data Sheet (230 KB, EN)

PD - 95418
IRFI1010NPbF
l
l
l
l
l
l
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS …
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.012Ω
G
ID = 49A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
49
35
290
58
0.38
± 20
360
43
5.8
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
300 (1.6mm from case )
10 lbf•in (1.1N•m)
°C
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
2.6
65
°C/W
06/16/04
IRFI1010NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.06
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
66
40
46
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
4.5
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
2900
880
330
12
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA†
0.012
Ω
VGS = 10V, ID = 26A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 43A†
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
130
ID = 43A
23
nC VDS = 44V
53
VGS = 10V, See Fig. 6 and 13 „†
–––
VDD = 28V
–––
ID = 43A
ns
–––
RG = 3.6Ω
–––
RD = 0.62Ω, See Fig. 10 „†
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
VGS = 0V
–––
V
DS = 25V
pF
–––
ƒ = 1.0MHz, See Fig. 5†
–––
ƒ = 1.0MHz
D
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) †
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
49
–––
–––
290
–––
–––
–––
–––
81
240
1.3
120
370
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 26A, VGS = 0V „
TJ = 25°C, IF = 43A
di/dt = 100A/µs „†
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ VDD = 25V, starting TJ = 25°C, L = 390µH
… t=60s, ƒ=60Hz
ƒ ISD ≤ 43A, di/dt ≤ 260A/µs, VDD ≤ V(BR)DSS,
† Uses IRF1010N data and test conditions
max. junction temperature. ( See fig. 11 )
RG = 25Ω, IAS = 43A. (See Figure 12)
T J ≤ 175°C
D
S
IRFI1010NPbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
0.1
20µs PULSE WIDTH
TC = 25°C
1
10
A
100
4.5V
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.0
TJ = 25°C
TJ = 175°C
10
V DS = 25V
20µs PULSE WIDTH
5
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
A
100
Fig 2. Typical Output Characteristics
1000
1
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
20µs PULSE WIDTH
TC = 175°C
10
0.1
100
VDS , Drain-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
10
A
I D = 72A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFI1010NPbF
4000
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss C oss = C ds + C gd
3000
Coss
20
V GS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
5000
I D = 43A
V DS = 44V
V DS = 28V
16
12
2000
Crss
1000
0
10
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
1
8
100
0
VDS , Drain-to-Source Voltage (V)
40
60
80
100
120
A
140
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
20
TJ = 175°C
TJ = 25°C
10µs
100
100µs
1ms
10
10ms
VGS = 0V
10
0.4
0.8
1.2
1.6
2.0
2.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.8
TC = 25°C
TJ = 175°C
Single Pulse
1
1
A
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRFI1010NPbF
VGS
RG
40
ID , Drain Current (A)
RD
V DS
50
D.U.T.
+
-VDD
10V
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
20
VDS
90%
10
0
25
50
75
100
125
150
175
10%
VGS
TC , Case Temperature ( °C)
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
PDM
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
15V
L
VDS
DRIVER
D.U.T
RG
+
V
- DD
IAS
20V
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
IRFI1010NPbF
1000
TOP
BOTTOM
800
ID
18A
31A
43A
600
400
200
0
VDD = 25V
25
50
A
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
+
V
- DS
IRFI1010NPbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D.U.T
ƒ
+
‚
-
-
„
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Driver Gate Drive
P.W.
Period
D=
+
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRFI1010NPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E XAMP L E :
T H IS IS AN IR F I840G
WIT H AS S E MB L Y
L OT CODE 3432
AS S E MB L E D ON WW 24 1999
IN T H E AS S E MB L Y L IN E "K "
P AR T N U MB E R
IN T E R N AT IONAL
R E CT IF IE R
L OGO
IR F I840G
924K
34
Note: "P" in assembly line
position indicates "Lead-Free"
AS S E MB L Y
L OT COD E
32
DAT E COD E
YE AR 9 = 1999
WE E K 24
L IN E K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/