FREESCALE MMA20312B

Freescale Semiconductor
Technical Data
Document Number: MMA20312B
Rev. 1.2, 2/2012
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
MMA20312BT1
High Efficiency/Linearity Amplifier
The MMA20312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier
designed for use as a linear driver amplifier in wireless base station applications
as well as an output stage in femtocell or repeater applications. It is suitable for
applications with frequencies from 1800 to 2200 MHz such as TD--SCDMA,
PCS, UMTS and LTE. The amplifier is housed in a cost--effective, surface mount
QFN plastic package.
• Typical Performance: VCC = 5 Volts, ICQ = 70 mA, Pout = 17 dBm
Frequency
Gps
(dB)
ACPR
(dBc)
PAE
(%)
Test Signal
1880 MHz
29.0
--47.4
9.1
TD--SCDMA
1920 MHz
29.0
--46.7
9.0
TD--SCDMA
2010 MHz
27.4
--52.0
9.3
TD--SCDMA
2025 MHz
26.8
--50.0
9.5
TD--SCDMA
2140 MHz
27.0
--51.7
9.4
W--CDMA
1800--2200 MHz, 27.2 dB
30.5 dBm
InGaP HBT
CASE 2131--01
QFN 3x3
PLASTIC
Features
• Frequency: 1800--2200 MHz
• P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
• Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
• OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)
• Active Bias Control (adjustable externally)
• Single 5 Volt Supply
• Cost--effective QFN Surface Mount Package
• In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
Table 1. Typical CW Performance (1)
Characteristic
Small--Signal Gain
(S21)
Table 2. Maximum Ratings
Rating
Symbol
1800
MHz
2140
MHz
2200
MHz
Unit
Gp
28.8
26.4
25.5
dB
Input Return Loss
(S11)
IRL
--17.6
--10.9
--9.7
dB
Output Return Loss
(S22)
ORL
--20.3
--14.7
--13.7
dB
Power Output @ 1dB
Compression
P1dB
30.5
30.5
30.5
dBm
Symbol
Value
Unit
Supply Voltage
VCC
6
V
Supply Current
ICC
550
mA
RF Input Power
Pin
14
dBm
Storage Temperature Range
Tstg
--65 to +150
°C
Junction Temperature (2)
TJ
150
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
1. VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25°C, 50 ohm system, CW
Application Circuit
Table 3. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 86°C, VCC1 = VCC2 = VBIAS = 5 Vdc
Symbol
Value (3)
Unit
RθJC
52
°C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010--2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMA20312BT1
1
Table 4. Electrical Characteristics (VCC1 = VCC2 = VBIAS = 5 Vdc, 2140 MHz, TA = 25°C, 50 ohm system, in Freescale W--CDMA
Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21) (1)
Gp
23.6
27.2
—
dB
Input Return Loss (S11)
IRL
—
--10.7
—
dB
Output Return Loss (S22)
ORL
—
--15.5
—
dB
Power Output @ 1dB Compression, CW
P1dB
—
28.2
—
dBm
Third Order Output Intercept Point, Two--Tone CW
OIP3
—
44.5
—
dBm
Noise Figure
NF
—
3.3
—
dB
Supply Current (1,2)
ICQ
62.5
70
77
mA
Supply Voltage (2)
VCC
—
5
—
V
Table 5. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
0, rated to 150 V
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 6. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
1. Specified data is based on performance of soldered down part in W--CDMA application circuit.
2. For reliable operation, the junction temperature should not exceed 150°C.
VBA2
VBA1
VCC1
VCC1
BIAS
CIRCUIT
RFout
VBIAS
RFin
VCC2
GND
VBA2 VCC1 VCC1
RFout
GND
12
11
10
VBA1
1
9
RFout
VBIAS
2
8
RFout
RFin
3
7
VCC2
4
5
6
GND GND GND
GND
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
MMA20312BT1
2
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
R1
R2
C6
C7
12
1
C5
Z5
VCC1
C8
Z4
11
C17
C18
C19
10
9
BIAS
CIRCUIT
8
2
Z2
RF
OUTPUT
Z3
C4
C3
RF
INPUT
Z1
7
3
C1
C2
Z6
L1
4
5
VCC2
6
C13
Z1
Z2
Z3
0.250″ x 0.030″ Microstrip
0.035″ x 0.030″ Microstrip
0.283″ x 0.030″ Microstrip
Z4
Z5
Z6
C16
0.080″ x 0.030″ Microstrip
0.155″ x 0.010″ Microstrip
0.045″ x 0.010″ Microstrip
Figure 3. MMA20312BT1 Test Circuit Schematic — TD--SCDMA
Table 7. MMA20312BT1 Test Circuit Component Designations and Values — TD--SCDMA
Part
Description
Part Number
Manufacturer
C1, C5
22 pF Chip Capacitors
06033J220GBS
AVX
C2
1.8 pF Chip Capacitor
06035J1R8BBS
AVX
C3
2.2 pF Chip Capacitor
06035J2R2BBS
AVX
C4
5.6 pF Chip Capacitor
06035J5R6BBS
AVX
C6, C7, C13
10 pF Chip Capacitors
06035J100GBS
AVX
C8, C18
1 μF Chip Capacitors
GRM188R61A105KA61
Murata
C9
Component Not Placed
C16, C19
10 μF Chip Capacitors
GRM188R60J106ME47
Murata
C17
0.1 μF Chip Capacitor
GRM188R71H104KA93
Murata
L1
1.8 nH Chip Inductor
LL1608--FS1N8S
TOKO
R1
120 Ω Chip Resistor
RR0816Q--121--D
Susumu
R2
1300 Ω Chip Resistor
RR0816Q--132--D
Susumu
PCB
0.014″, εr = 3.7
FR408
Isola
Note: Component number C9 is labeled on board but not placed. C10, C11, C12, C14 and C15 are intentionally omitted.
MMA20312BT1
RF Device Data
Freescale Semiconductor, Inc.
3
VCC1
VBIAS(1)
C8
C19
R1
R2
C7
C9*
C17 C18
C6
RFIN
RFOUT
C5
C1
C2
C3
L1
C4
C13
C16
QFN 3x3--12B
Rev. 0
VCC2
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Note: Component number C9* is labeled on board but not placed.
Figure 4. MMA20312BT1 Test Circuit Component Layout — TD--SCDMA
Table 7. MMA20312BT1 Test Circuit Component Designations and Values — TD--SCDMA
Part
Description
Part Number
Manufacturer
C1, C5
22 pF Chip Capacitors
06033J220GBS
AVX
C2
1.8 pF Chip Capacitor
06035J1R8BBS
AVX
C3
2.2 pF Chip Capacitor
06035J2R2BBS
AVX
C4
5.6 pF Chip Capacitor
06035J5R6BBS
AVX
C6, C7, C13
10 pF Chip Capacitors
06035J100GBS
AVX
C8, C18
1 μF Chip Capacitors
GRM188R61A105KA61
Murata
C9
Component Not Placed
C16, C19
10 μF Chip Capacitors
GRM188R60J106ME47
Murata
C17
0.1 μF Chip Capacitor
GRM188R71H104KA93
Murata
L1
1.8 nH Chip Inductor
LL1608--FS1N8S
TOKO
R1
120 Ω Chip Resistor
RR0816Q--121--D
Susumu
R2
1300 Ω Chip Resistor
RR0816Q--132--D
Susumu
PCB
0.014″, εr = 3.7
FR408
Isola
Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted.
(Test Circuit Component Designations and Values table repeated for reference.)
MMA20312BT1
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — TD--SCDMA
0
35
--5
30
--40°C
25
--15
S21 (dB)
S11 (dB)
--10
85°C
--20
25°C
--25
85°C
25°C
20
15
10
--30
--35
1500
--40°C
5
VCC1 = VCC2 = VBIAS = 5 Vdc
1750
2000
2250
2500
0
1500
2750
VCC1 = VCC2 = VBIAS = 5 Vdc
1750
2000
2250
2500
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. S11 versus Frequency versus
Temperature
Figure 6. S21 versus Frequency versus
Temperature
2750
0
--5
--40°C
S22 (dB)
--10
85°C
--15
25°C
--20
--25
--30
--35
1500
VCC1 = VCC2 = VBIAS = 5 Vdc
1750
2000
2250
2500
2750
f, FREQUENCY (MHz)
Figure 7. S22 versus Frequency versus
Temperature
MMA20312BT1
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — TD--SCDMA
200
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 2017.5 MHz
--15
--20
180
160
140
ACPR (dBc)
--25
25°C
--30
--35
ICC
--40
120
85°C
--45
--50 ACPR
80
60
85°C
--40°C
40
--55
--60
100
--40°C
20
25°C
7
9
11
13
15
17
19
21
ICC, COLLECTOR CURRENT (mA)
--10
0
23
Pout, OUTPUT POWER (dBm)
Figure 8. ACPR versus Collector Current versus
Output Power versus Temperature
29
Gain
45
--40°C
40
Gps, POWER GAIN (dB)
28
27
35
25°C
26
25
30
25
85°C
24
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 2017.5 MHz
23
20
--40°C
15
85°C
22
PAE
21
10
5
25°C
20
7
9
11
13
15
17
19
21
PAE, POWER ADDED EFFICIENCY (%)
50
30
0
23
Pout, OUTPUT POWER (dBm)
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
Figure 9. Power Gain versus Power Added
Efficiency versus Output Power versus Temperature
31
VCC1 = VCC2 = VBIAS = 5 Vdc
30
29
--40°C
28
25°C
27
85°C
26
25
24
1800
1850
1900
1950
2000
2050
f, FREQUENCY (MHz)
Figure 10. P1dB versus Frequency versus
Temperature, CW
MMA20312BT1
6
RF Device Data
Freescale Semiconductor, Inc.
VBIAS
R1
R2
C6
C7
12
1
C5
Z5
VCC1
C8
Z4
11
C9
C17
C18
C19
10
9
BIAS
CIRCUIT
2
8
Z2
Z3
C3
RF
INPUT
Z1
3
C4
7
C1
C2
RF
OUTPUT
Z6
L1
4
5
VCC2
6
C13
Z1
Z2
Z3
0.218″ x 0.030″ Microstrip
0.068″ x 0.030″ Microstrip
+
0.250″ x 0.030″ Microstrip
Z4
Z5
Z6
C16
0.080″ x 0.030″ Microstrip
0.155″ x 0.010″ Microstrip
0.045″ x 0.010″ Microstrip
Figure 11. MMA20312BT1 Test Circuit Schematic — W--CDMA
Table 8. MMA20312BT1 Test Circuit Component Designations and Values — W--CDMA
Part
Description
Part Number
Manufacturer
C1, C5, C9
22 pF Chip Capacitors
06033J220GBS
AVX
C2, C3
1.8 pF Chip Capacitors
06035J1R8BBS
AVX
C4
5.6 pF Chip Capacitor
06035J5R6BBS
AVX
C6, C7, C13
10 pF Chip Capacitors
06035J100GBS
AVX
C8, C18
1 μF Chip Capacitors
GRM188R61A105KA61
Murata
C16, C19
10 μF Chip Capacitors
GRM188R60J106ME47
Murata
C17
0.1 μF Chip Capacitor
GRM188R71H104KA93
Murata
L1
1.8 nH Chip Inductor
LL1608--FS1N8S
TOKO
R1
120 Ω Chip Resistor
RR0816Q--121--D
Susumu
R2
1500 Ω Chip Resistor
RR0816Q--152−D
Susumu
PCB
0.014″, εr = 3.7
FR408
Isola
Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted.
MMA20312BT1
RF Device Data
Freescale Semiconductor, Inc.
7
VCC1
R1
VBIAS(1)
C8
C19
R2
C7
C9
C17 C18
C6
RFIN
RFOUT
C5
C1
C2
C3
L1
C4
C13
C16
QFN 3x3--12B
Rev. 0
VCC2
(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device].
Figure 12. MMA20312BT1 Test Circuit Component Layout — W--CDMA
Table 8. MMA20312BT1 Test Circuit Component Designations and Values — W--CDMA
Part
Description
Part Number
Manufacturer
C1, C5, C9
22 pF Chip Capacitors
06033J220GBS
AVX
C2, C3
1.8 pF Chip Capacitors
06035J1R8BBS
AVX
C4
5.6 pF Chip Capacitor
06035J5R6BBS
AVX
C6, C7, C13
10 pF Chip Capacitors
06035J100GBS
AVX
C8, C18
1 μF Chip Capacitors
GRM188R61A105KA61
Murata
C16, C19
10 μF Chip Capacitors
GRM188R60J106ME47
Murata
C17
0.1 μF Chip Capacitor
GRM188R71H104KA93
Murata
L1
1.8 nH Chip Inductor
LL1608--FS1N8S
TOKO
R1
120 Ω Chip Resistor
RR0816Q--121--D
Susumu
R2
1500 Ω Chip Resistor
RR0816Q--152−D
Susumu
PCB
0.014″, εr = 3.7
FR408
Isola
Note: Component numbers C10, C11, C12, C14 and C15 are intentionally omitted.
(Test Circuit Component Designations and Values table repeated for reference.)
MMA20312BT1
8
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — W--CDMA
200
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 2140 MHz
--15
--20
180
160
140
ACPR (dBc)
--25
120
--30
ICC
--35
100
80
--40
--45
60
ACPR
--50
40
20
--55
--60
8
10
12
14
18
16
20
22
ICC, COLLECTOR CURRENT (mA)
--10
0
24
Pout, OUTPUT POWER (dBm)
Figure 13. ACPR versus Collector Current
versus Output Power
VCC1 = VCC2 = VBIAS = 5 Vdc
f = 2140 MHz
29
Gps, POWER GAIN (dB)
28
45
40
Gain
27
35
26
30
25
25
24
20
PAE
23
15
22
10
21
5
20
8
10
12
14
16
18
20
22
PAE, POWER ADDED EFFICIENCY (%)
50
30
0
24
Pout, OUTPUT POWER (dBm)
P1dB, 1 dB COMPRESSION POINT, CW (dBm)
Figure 14. Power Gain versus Power Added
Efficiency versus Output Power
31
VCC1 = VCC2 = VBIAS = 5 Vdc
30
29
28
27
26
25
24
2100
2120
2140
2160
2180
2200
f, FREQUENCY (MHz)
Figure 15. P1dB versus Frequency, CW
MMA20312BT1
RF Device Data
Freescale Semiconductor, Inc.
9
3.00
0.70
0.30
2.00
3.40
0.50
1.6 x 1.6 Solder Pad
with Thermal Via
Structure
Figure 16. PCB Pad Layout for QFN 3x3
MA01
YWZ
Figure 17. Product Marking
MMA20312BT1
10
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MMA20312BT1
RF Device Data
Freescale Semiconductor, Inc.
11
MMA20312BT1
12
RF Device Data
Freescale Semiconductor, Inc.
MMA20312BT1
RF Device Data
Freescale Semiconductor, Inc.
13
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Software
• .s2p File
Development Tools
• Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Oct. 2010
• Initial Release of Data Sheet
1
Mar. 2011
• Added “OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)” to Features list, p. 1
• Typical CW Performance table: removed OIP3, p. 1
• Figs. 4 and 12, Test Circuit Component Layout, updated component part layout identifier to reflect package
type. Changed from MMA20312B to QFN 3x3--12B, p. 4, 8
1.1
Mar. 2011
• Updated device descriptor box to reflect W--CDMA application circuit small--signal gain value, p. 1
1.2
Feb. 2012
• All references to “VCTRL” in the data sheet tables, test circuit schematics and component layouts are
replaced with “VBIAS”. VBIAS is the supply voltage which sets the internal bias conditions via pins 1, 2, and
12, p. 1--3, 5--7, 9. Footnote “(1) VBIAS [Board] supplies VBA1, VBA2 and VBIAS [Device]” added to test
circuit component layouts, p. 4, 8.
• Fig. 3, Test Circuit Schematic -- TD--SCDMA, Table 7, Test Circuit Component Designations and Values -TD--SCDMA, Fig. 4, Test Circuit Component Layout -- TD--SCDMA, Fig. 11, Test Circuit Schematic -W--CDMA, Table 8, Test Circuit Component Designations and Values -- W--CDMA and Fig. 12, Test Circuit
Component Layout -- W--CDMA: clarified components not placed and components intentionally omitted,
p. 3, 4, 7, 8
MMA20312BT1
14
RF Device Data
Freescale Semiconductor, Inc.
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MMA20312BT1
Document
Number:
RF
Device
Data MMA20312B
Rev. 1.2, 2/2012
Freescale
Semiconductor, Inc.
15