Chinese (simplified)/English

技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF200R12W1H3F_B11
J
VCES = 1200V
IC nom = 30A / ICRM = 60A
典型应用
• 太阳能应用
TypicalApplications
• Solarapplications
电气特性
• 低开关损耗
• thinQH碳化硅肖特基二极管1200V
ElectricalFeatures
• Lowswitchinglosses
• thinQHSiCSchottkydiode1200V
机械特性
• 低热阻的三氧化二铝(Al2O3衬底
• 集成NTC温度传感器
• 紧凑型设计
• PressFIT压接技术
MechanicalFeatures
• Al2O3substratewithlowthermalresistance
• IntegratedNTCtemperaturesensor
• Compactdesign
• PressFITcontacttechnology
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:CM
dateofpublication:2016-02-23
approvedby:AKDA
revision:V3.0
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF200R12W1H3F_B11
反极性保护二极管A/Inverse-polarityprotectiondiodeA
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM 1200
V
最大正向均方根电流(每芯片)
MaximumRMSforwardcurrentperchip
TC = 80°C
IFRMSM 50
A
最大整流器输出均方根电流
MaximumRMScurrentatrectifieroutput
TC = 80°C
IRMSM 60
A
正向浪涌电流
Surgeforwardcurrent
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
IFSM
360
290
A
A
I2t-值
I²t-value
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
I²t
650
420
A²s
A²s
特征值/CharacteristicValues
min.
typ.
max.
正向电压
Forwardvoltage
Tvj = 150°C, IF = 30 A
VF
0,95
V
斜率电阻
Sloperesistance
Tvj = 150°C
rT
0,10
mΩ
反向电流
Reversecurrent
Tvj = 150°C, VR = 1200 V
IR
0,10
mA
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
0,800 0,900 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,800
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:CM
dateofpublication:2016-02-23
approvedby:AKDA
revision:V3.0
2
-40
K/W
125
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF200R12W1H3F_B11
IGBT,斩波器/IGBT-Chopper
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
集电极电流
Implementedcollectorcurrent
VCES
1200
V
ICN
100
A
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 80°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
30
50
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
200
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
375
W
VGES
+/-20
V
栅极-发射极峰值电压
Gate-emitterpeakvoltage
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V
IC = 30 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
A
A
typ.
max.
1,30
1,35
1,35
1,45
V
V
V
5,80
6,45
V
栅极阈值电压
Gatethresholdvoltage
IC = 3,80 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VGE = -15 V ... +15 V
QG
0,80
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
6,15
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,345
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
VGEth
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 30 A, VCE = 600 V
VGE = ±15 V
RGon = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 30 A, VCE = 600 V
VGE = ±15 V
RGon = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 30 A, VCE = 600 V
VGE = ±15 V
RGoff = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 30 A, VCE = 600 V
VGE = ±15 V
RGoff = 4,7 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 30 A, VCE = 600 V, LS = 40 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 2200 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 4,7 Ω
Tvj = 150°C
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
5,05
0,018
0,017
0,017
µs
µs
µs
0,01
0,01
0,01
µs
µs
µs
0,30
0,40
0,44
µs
µs
µs
0,014
0,03
0,035
µs
µs
µs
Eon
0,73
0,78
0,80
mJ
mJ
mJ
IC = 30 A, VCE = 600 V, LS = 40 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 2800 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 4,7 Ω
Tvj = 150°C
Eoff
1,30
2,00
2,40
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
360
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
preparedby:CM
dateofpublication:2016-02-23
approvedby:AKDA
revision:V3.0
tP ≤ 10 µs, Tvj = 150°C
td on
tr
td off
tf
RthJC
3
0,350 0,400 K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF200R12W1H3F_B11
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
在开关状态下温度
Temperatureunderswitchingconditions
0,350
Tvj op
-40
K/W
150
°C
Diode-斩波器/Diode-Chopper
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
VRRM Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 25°C
VR = 0 V, tP = 10 ms, Tvj = 125°C
1200
V
IF
30
A
IFRM
30
A
I²t
150
110
特征值/CharacteristicValues
min.
typ.
max.
1,60
2,20
1,95
A²s
A²s
正向电压
Forwardvoltage
IF = 30 A, VGE = 0 V
IF = 30 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 30 A, - diF/dt = 2200 A/µs (Tvj=150°C)
VR = 600 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
10,0
10,0
A
A
恢复电荷
Recoveredcharge
IF = 30 A, - diF/dt = 2200 A/µs (Tvj=150°C)
VR = 600 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
0,30
0,50
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 30 A, - diF/dt = 2200 A/µs (Tvj=150°C)
VR = 600 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,06
0,06
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
0,500 0,600 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,450
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
V
V
K/W
150
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
min.
typ.
max.
额定电阻值
Ratedresistance
TNTC = 25°C
R100偏差
DeviationofR100
TNTC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TNTC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
R25
∆R/R
5,00
-5
P25
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:CM
dateofpublication:2016-02-23
approvedby:AKDA
revision:V3.0
4
kΩ
5
%
20,0
mW
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF200R12W1H3F_B11
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
11,5
6,3
mm
电气间隙
Clearance
端子至散热器/terminaltoheatsink
端子至端子/terminaltoterminal
10,0
5,0
mm
> 200
相对电痕指数
Comperativetrackingindex
VISOL CTI
min.
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
preparedby:CM
dateofpublication:2016-02-23
approvedby:AKDA
revision:V3.0
5
max.
30
nH
RCC'+EE'
5,00
mΩ
G
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25A rms per connector pin.
typ.
LsCE
Tstg
重量
Weight
kV
2,5
-40
125
24
°C
g
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF200R12W1H3F_B11
正向偏压特性反极性保护二极管A(典型)
forwardcharacteristicofInverse-polarityprotectiondiodeA
(typical)
IF=f(VF)
输出特性IGBT,斩波器(典型)
outputcharacteristicIGBT-Chopper(typical)
IC=f(VCE)
VGE=15V
60
60
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
50
50
40
40
IC [A]
IF [A]
Tvj = 25°C
Tvj = 150°C
30
20
20
10
10
0
0,0
0,2
0,4
0,6
0,8
VF [V]
1,0
1,2
0
1,4
输出特性IGBT,斩波器(典型)
outputcharacteristicIGBT-Chopper(typical)
IC=f(VCE)
Tvj=150°C
0,2
0,4
0,6
0,8
1,0 1,2
VCE [V]
1,4
1,6
1,8
2,0
60
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
50
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
50
40
IC [A]
40
30
30
20
20
10
10
0
0,0
传输特性IGBT,斩波器(典型)
transfercharacteristicIGBT-Chopper(typical)
IC=f(VGE)
VCE=20V
60
IC [A]
30
0,0
0,5
1,0
1,5
VCE [V]
2,0
2,5
0
3,0
5
6
7
8
VGE [V]
preparedby:CM
dateofpublication:2016-02-23
approvedby:AKDA
revision:V3.0
6
9
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF200R12W1H3F_B11
开关损耗IGBT,斩波器(典型)
switchinglossesIGBT-Chopper(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=4.7Ω,RGoff=4.7Ω,VCE=600V
开关损耗IGBT,斩波器(典型)
switchinglossesIGBT-Chopper(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=30A,VCE=600V
4,5
6,0
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
4,0
5,0
3,5
4,5
3,0
4,0
3,5
2,5
E [mJ]
E [mJ]
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
5,5
2,0
3,0
2,5
1,5
2,0
1,5
1,0
1,0
0,5
0,0
0,5
0
10
20
30
IC [V]
40
50
0,0
60
瞬态热阻抗IGBT,斩波器
transientthermalimpedanceIGBT-Chopper
ZthJH=f(t)
0
5
10
15
20
25
RG [Ω]
30
35
40
45
反偏安全工作区IGBT,斩波器(RBSOA)
reversebiassafeoperatingareaIGBT-Chopper(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=4.7Ω,Tvj=150°C
10
70
ZthJH : IGBT
IC, Modul
IC, Chip
60
50
1
IC [A]
ZthJH [K/W]
40
30
0,1
20
10
i:
1
2
3
4
ri[K/W]: 0,02368 0,04588 0,23088 0,40182
τi[s]:
0,0005 0,005
0,05
0,2
0,01
0,001
0,01
0,1
t [s]
1
0
10
0
200
400
600
800
t [s]
preparedby:CM
dateofpublication:2016-02-23
approvedby:AKDA
revision:V3.0
7
1000
1200
1400
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF200R12W1H3F_B11
正向偏压特性Diode-斩波器(典型)
forwardcharacteristicofDiode-Chopper(typical)
IF=f(VF)
开关损耗Diode-斩波器(典型)
switchinglossesDiode-Chopper(typical)
Erec=f(IF)
RGon=4.7Ω,VCE=600V
60
0,100
Tvj = 25°C
Tvj = 125°C
Erec, Tvj = 125°C
50
0,075
E [mJ]
IF [A]
40
30
0,050
20
0,025
10
0
0,0
0,5
1,0
1,5
2,0
0,000
2,5
0
10
20
VF [V]
开关损耗Diode-斩波器(典型)
switchinglossesDiode-Chopper(typical)
Erec=f(RG)
IF=30A,VCE=600V
30
IF [A]
40
50
60
瞬态热阻抗Diode-斩波器
transientthermalimpedanceDiode-Chopper
ZthJH=f(t)
0,100
10
Erec, Tvj = 125°C
ZthJH : Diode
0,075
ZthJH [K/W]
E [mJ]
1
0,050
0,1
0,025
i:
1
2
3
4
ri[K/W]: 0,118 0,204 0,37 0,258
τi[s]:
0,0005 0,005 0,05 0,2
0,000
0
5
10
15
20
25
RG [Ω]
30
35
40
0,01
0,001
45
preparedby:CM
dateofpublication:2016-02-23
approvedby:AKDA
revision:V3.0
8
0,01
0,1
t [s]
1
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF200R12W1H3F_B11
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100000
Rtyp
R[Ω]
10000
1000
100
0
20
40
60
80
100
TC [°C]
120
140
160
preparedby:CM
dateofpublication:2016-02-23
approvedby:AKDA
revision:V3.0
9
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF200R12W1H3F_B11
接线图/Circuitdiagram
J
封装尺寸/Packageoutlines
Infineon
preparedby:CM
dateofpublication:2016-02-23
approvedby:AKDA
revision:V3.0
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-Module
DF200R12W1H3F_B11
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2015.
AllRightsReserved.
使用条件和条款
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingthe
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incustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnical
departmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgivenin
thisdocumentwithrespecttosuchapplication.
Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
Technologiesoffice(www.infineon.com).
WARNINGS
Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactyour
nearestInfineonTechnologiesoffice.
ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorizedrepresentativesofInfineon
Technologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswhereafailureoftheproductoranyconsequencesof
theusethereofcan
reasonablybeexpectedtoresultinpersonalinjury.
preparedby:CM
dateofpublication:2016-02-23
approvedby:AKDA
revision:V3.0
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