DTA114TUA(SOT 323)

WILLAS
FM120-M
DTA114TUA THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
•
•
x
x
x
0.146(3.7)
0.130(3.3)
Pb-Free package is available
• High current capability, low forward voltage drop.
RoHS product
for packing
capability.code suffix ”G”
• High surge
Guardring
for
protection.
•
Halogen free productovervoltage
for packing
code suffix “H”
high-speed switching.
• UltraUL
Epoxy meets
94 V-0 flammability rating
• Silicon epitaxial planar chip, metal silicon junction.
Moisure Sensitivity Level 1
meet environmental standards of
• Lead-free
Built-in bias
resistorsparts
enable
the configuration of an inverter circuit
MIL-STD-19500 /228
without connecting
external
input
resistors
(see equivalent circuit)
suffix "G"
• RoHS product for packing code
The bias resistors
consist
of
thin-film
resistors
Halogen free product for packing code suffixwith
"H" complete
isolation to
allow
negative
biasing
of
the
input.
They
also have the
Mechanical data
advantage of almost completely eliminating parasitic effects
: UL94-V0 need
rated flame
• Epoxy
Only the on/off
conditions
to be retardant
set for operation, making
Case
:
Molded
plastic,
SOD-123H
•
device design easy
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
•
.004(0.10)MIN.
SOT-323
optimize board space.
Features• Low
power loss, high efficiency.
0.040(1.0)
.010(0.25)
0.024(0.6)
.003(0.08)
0.031(0.8) Typ.
0.031(0.8) Typ.
.087(2.20)
Dimensions in inches and.070(1.80)
(millimeters)
• Polarity : Indicated by cathode band
• Mounting Position : Any
Absolute Maximum Ratings
• Weight : Approximated
0.011 gram Value
Parameter
Symbol
.054(1.35)
.045(1.15)
Method 2026
Unit
Collector-Base Voltage
VCBO
-50
V
AND ELECTRICAL
CHARACTERISTICS
Collector-Emitter Voltage MAXIMUM RATINGS
VCEO
-50
V
Ratings
at 25℃ ambient temperature
Emitter-Base
voltage
VEBO unless otherwise
-5 specified.
V
Collector Current-Continuous
IC of inductive
-100
mA
Single phase half wave, 60Hz, resistive
load.
Collector Dissipation
For capacitive load, derate current P
by
C 20%
Junction Temperature Range
RATINGS
TJ
Marking Code
Storage Temperature
Range
TSTG
Maximum Recurrent Peak Reverse Voltage
200
.047(1.20)
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
-55~150
SYMBOL FM120-MHк
-55~150
VRRM
12
20
к 13
30
14
40
15
50
16
60
18
80
42
.004(0.10)MAX.
60
VRMS
14
21
28
35
Maximum DC Blocking Voltage
VDC
20
30
40
50
Maximum Average Forward Rectified Current
IO
Typ
IFSM
Maximum RMS Voltage
Electrical
Characteristics
Peak Forward Surge
Current 8.3 ms single half sine-wave
Parameter
Min
Sym
.056(1.40)
mW
superimposed
on rated
load (JEDEC
method)
Collector-Base
Breakdown
Voltage
Max
Unit
1.0
30
10
100
115
150
120
200
56
70
105
140
80
100
150
200
.016(0.40)
.008(0.20)
.043(1.10)
.032(0.80)
-50
----V
=0)
(IC=-50uA,
40
Typical
ThermalIEResistance
(Note 2)
RΘJA
Collector-Emitter Breakdown Voltage
-50
---J
--V
V(BR)CEO Typical Junction Capacitance (Note 1)
120in inches and (millimeters)
C
Dimensions
(IC=-1mA, IB=0)
-55 to +125
-55 to +150
Operating
Temperature
RangeVoltage
TJ
Emitter-Base
Breakdown
-5
----V
V(BR)EBO
IC=0) Range
(IE=-50uA,
- 65 to +175
Storage
Temperature
TSTG
Collector Cut-off Current
Suggested Solder
-----0.5
uA
ICBO
(VCB=-50V, IE=0)
Layout
FM180-MH
FM1100-MH FM1150-MH FM1200-M
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MHPad
Emitter Cut-off Current
-----0.5
uA
IEBO
IC=0)Voltage at 1.0A DC
(VEB=-4V,
0.9
Maximum
Forward
0.92
VF
0.50
0.70
0.85
0.70
mm
DC Current Gain
0.5
100
250
600
--hFE Maximum Average Reverse Current at @T A=25℃
IR
(VCE=-5V, IC=-1mA)
0.90
10
Rated
DC Blocking Voltage
Collector-Emitter
Saturation [email protected] A=125℃
-----0.3
V
VCE(sat)
(IC=-10mA, IB=-1mA)
13
K¡
7
10
1.90
R1 NOTES:
Input Resistor
1- Measured
at 1Frequency
MHZ and applied reverse voltage of 4.0 VDC.
Transition
--250
--MHz
fT
IC=-5mA,
(VCE=-10V,
2- Thermal
Resistance
Fromf=100MHz)
Junction to Ambient
V(BR)CBO
*Marking:
94
0.65
0.65
2012-0
2012-06
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA114TUA THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
14
40
15
50
16
60
18
80
10
100
115
150
120
200
35
42
50
60
56
70
105
140
80
100
150
200
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
DTA114TUATHRU
PNP
Digital
Transistor
FM1200-M+
1.0A
SURFACE
MOUNT
SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Features
Pb Free Produc
SOD-123+ PACKAGE
Package outline
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1)low
(2)forward voltage drop.
G ‐WS Tape& Reel: 3 Kpcs/Reel surge capability.
• HighDTA114TUA–T
for overvoltage protection.
• Guardring
Note: (1)
Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free
parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
specification herein, to make corrections, modifications, enhancements or other Single phase half wave, 60Hz, resistive of inductive load.
For capacitive
load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information 12
13
14
15
16
18
10
115
120
contained are intended to provide a product description only. "Typical" parameters 20
30
40
50
60
80
100
150
200
Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum
RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Maximum Average Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
use of any product or circuit. superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
WILLAS products are not designed, intended or authorized for use in medical, -55 to +125
-55 to +150
Operating
Temperature Range
TJ
Marking Code
- 65 to +175
Storagelife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
of WILLAS. Customers using or selling WILLAS components for use in 10
@T A=125℃
Rated DC
Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured
at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. Maximum Forward Voltage at 1.0A DC
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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