WILLAS FM120-M+ 2SA812xLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to FEATURE optimize board space. ƽHigh Voltage: VCEO = -50 V. • Low power loss, high efficiency. ƽEpitaxial planarcapability, type. low forward voltage drop. • High current ƽNPN 2SC1623 surge capability. • Highcomplement: 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. declare for thatovervoltage the materialprotection. of product compliance with RoHS requirements. ƽ•We Guardring package switching. is available Ultra high-speed •Pb-Free product for planar packing code suffixsilicon ”G” junction. Silicon epitaxial chip, metal •RoHS Lead-free parts meetfor environmental •Halogen free product packing codestandards suffix “H” of • 0.071(1.8) 0.056(1.4) SOT-23 MIL-STD-19500 /228 RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" DEVICE MARKING AND ORDERING INFORMATION Mechanical data 3 0.040(1.0) COLLECTOR Shipping Device Marking • Epoxy : UL94-V0 rated flame retardant M8 2SA812QLT1 • Case : Molded plastic, SOD-123H 0.024(0.6) 3000/Tape&Reel 0.031(0.8) Typ. , 3000/Tape&Reel • Terminals :Plated terminals, 2SA812RLT1 M6solderable per MIL-STD-750 Method 2026 3000/Tape&Reel 2SA812SLT1 M7 • Polarity : Indicated by cathode band 0.031(0.8) Typ. 1 BASE 2 Dimensions in inches and (millimeters) EMITTER • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. MAXIMUM RATINGS Single phase half wave, 60Hz, resistive of inductive load. Symbol L2SA812 Rating For capacitive load, derate current by 20% Collector-Emitter Voltage Emitter-Base Voltage Maximum RMS Voltage Collector current-continuoun VEBO IC Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) TypicalTHERMAL Thermal Resistance (Note 2) CHARATEERISTICS 13 30 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo VRMS 14 21 28 35 42 56 70 105 140 Vo VDC 20 30 40 50 60 80 100 150 200 Vo Operating Temperature Range TJ Total Device Dissipation FR-5 Board, (1) -150 TSTG Symbol -55 to +125 Max CHARACTERISTICS o Derate above 25 C Thermal Resistance, Junction to Ambient Maximum Average Reverse Current at @T A=25℃ Rated Total DC Blocking Voltage Device Dissipation PD VF @T A=125℃ IR R Junction and Storage Temperature 2012-06 A ℃ P -55 to +150 ℃ - 65 to +175 0.50 θ JA ℃ mW 1.8 556 mW/ C 0.70 o C/W R θJA Tj ,Tstg 0.85 0.5 0.9 0.92 200 mW 2.4 mW/oC 417 -55 to +150 o Vo 10 PD Substrate, (2) TA=25 oC 2- Thermal Resistance From Junction to Ambient Thermal Resistance, Junction to Ambient 40 120 A FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH o o 1- Measured at 1above MHZ and Derate 25applied C reverse voltage of 4.0 VDC. 2012- Unit 200 Maximum Forward Voltage at 1.0A DC mAdc o NOTES:Alumina V 1.0 30 RΘJA CJ Storage Temperature Range -6 IO IFSM Typical Junction Capacitance (Note 1) Characteristic 12-60 20 V14 VRRM VCBO Maximum Recurrent Peak Reverse Voltage TA=25 C V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Collector-Base Voltage Marking Code -50 VCEO RATINGS Unit mA C/W o C WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA812xLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) • Low profile surface mounted application in order to optimizeCharacteristic board space. Symbol Min power loss, high efficiency. • Low CHARACTERISTICS OFF High current capability, low forward voltage drop. • Collector-Emitter Breakdown Voltage V(BR)CEO • High surge capability. (IC=-1mA) • Guardring for overvoltage protection. Emitter-Base Breakdown Voltage V(BR)EBO switching. • Ultra high-speed (I•ESilicon =-50 µΑepitaxial ) planar chip, metal silicon junction. meet environmental • Lead-free parts Collector-Base Breakdown Voltage standards of V(BR)CBO Typ Max Unit 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. -50 - - V -6 - - V -60 - - V - - -0.1 µA -0.1 0.040(1.0) µA 0.024(0.6) 0.071(1.8) 0.056(1.4) /228 =-50 µA) (ICMIL-STD-19500 • RoHS product for packing code suffix "G" Collector Cutoff Current Halogen free product for packing code suffix "H" (V CB=-50V) Mechanical ICBO data Emitter Current (VBE=-6V) : UL94-V0 rated flame retardant • EpoxyCutoff IEBO ON CHARACTERISTICS : Molded plastic, SOD-123H • Case 0.031(0.8) Typ. , Current:Plated Gain terminals, solderable per MIL-STD-750 hFE • DC Terminals 120 0.031(0.8) Typ. - 560 (IC=-1mA,VMethod CE=-6.0V) 2026 Saturation Voltage • Collector-Emitter Polarity : Indicated by cathode band (I =-100mA,I =-10mA) C B • Mounting Position : Any -Emitter On Voltage • Base Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) VCE(sat) - -0.18 -0.3 V VBE -0.58 -0.62 -0.68 V 180 - MHz 4.5 - pF IE=-1.0mA,VCE=-6.0V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS SMALL-SIGNAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Current-Gain-Bandwidth Product Single phase half wave, 60Hz, resistive of inductive load. (VCE=-6.0V,IE =-10mA) For capacitive load, derate current by 20% Output Capacitance(VCE = -10V, IE=0, f=1.0MHz) RATINGS hFE Values are classified as followes Maximum Recurrent Peak Reverse Voltage NOTE: Maximum DC Blocking Voltage Cobo - SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum RMS Voltage - Ft * Q hFE 120~270 Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) VRRM VRMS 14 21 20 30 S 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo 270~560 IO IFSM Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 13 30 180~390 VDC RΘJA Typical Thermal Resistance (Note 2) R 12 20 1.0 30 40 120 -55 to +125 Am Am ℃ P -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.5 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA812xLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features Fig.1 Grounded emitter excellent propagation characteristics process design, power dissipation offers • Batch better reverse leakage current and thermal resistance. –50 profile surface mounted application in order to • Low VCE= –10 V T A board = 100°Cspace. optimize 25°C high efficiency. –20 power loss, • Low – 40°C current capability, low forward voltage drop. • High –10 • High surge capability. –50 for overvoltage protection. • Guardring • Ultra high-speed switching. –2 • Silicon epitaxial planar chip, metal silicon junction. –1 parts meet environmental standards of • Lead-free MIL-STD-19500 /228 –0.5 product for packing code suffix "G" • RoHS Halogen free product for packing code suffix "H" Fig.2 Grounded emitter output characteristics( ) SOD-123H I C, COLLECTOR CURRENT (mA) I C, COLLECTOR CURRENT (mA) –10 –35.0 T A = 25°C –31.5 0.146(3.7) 0.130(3.3) –8 –28.0 0.012(0.3) Typ. –24.5 –21.0 –6 0.071(1.8) –17.5 0.056(1.4) –14.0 –4 –10.5 –7.0 –2 –3.5µA –0.2 Mechanical data –0.1 0 rated–0.8 flame–1.0 retardant • Epoxy–0.2: UL94-V0 –0.4 –0.6 –1.2 –1.4 –1.6 plastic, SOD-123H • Case : Molded TO EMITTER VOLTAGE(V) V BE , BASE , • Terminals :Plated terminals, solderable per MIL-STD-750 0 Method 2026 Dimensions in inches and (millimeters) RATINGS AND ELECTRICAL CHARACTERISTICS 200 –250 Ratings at–6025℃ ambient temperature unless otherwise specified. –200 Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% –150 –40 RATINGS VRRM 12 20 –50 µA VRMS I B =0 14 0 –1 Maximum DC Blocking Voltage 100 SYMBOL –100 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Maximum RMS Voltage 0 –2 20–5 –4 VDC –3 13 30 14 40 50 21 28 30 –0.240 V CE , COLLECTOR TO EMITTER VOLTAGE (V) IO IFSM Maximum Average Forward Rectified Current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating500 Temperature Range T A = 100°C Storage Temperature Range 25°C TJ IR @T A=125℃ NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 50 2- Thermal Resistance From Junction to Ambient VCE= – 6V –0.2 –0.5 –1 –2 –5 –10 –20 I C, COLLECTOR CURRENT (mA) 2012-06 2012- –5 120 200 Vo 105 140 Vo –100 150 200 Vo 70 –10 80 –20 100 –50 Am Am ℃ 40 collector current ( ) 120 –1 -55 to +125 VF Maximum Average Reverse Current at @T A=25℃ 100 56 60 115 150 P -55 to T +150 A = 25°C ℃ - 65 to +175 ℃ –0.5 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum 200 Forward Voltage at 1.0A DC Rated DC Blocking Voltage 42 –2 10 100 Fig.6 Collector-emitter saturation voltage vs. TSTG CHARACTERISTICS –40°C 35 50–1 –0.5 18 80 30 V CE(sat), COLLECTOR SATURATION VOLTAGE(V) CJ h FE, DC CURRENT GAIN Typical Junction Capacitance (Note 1) 16 60 RΘJA Typical Thermal Resistance (Note 2) 15 50 CURRENT (mA) I C, COLLECTOR1.0 Fig.5 DC current gain vs. collector current ( ) VCE= –5 V –3V –1V T A = 25°C Maximum Recurrent Peak Reverse Voltage 0.031(0.8) Typ. 500 Marking Code –20 –1.6 Fig.4 DC current gain vs. collector current ( ) h FE, DC CURRENT GAIN I C, COLLECTOR CURRENT (mA) –1.2 0.031(0.8) Typ. • Polarity : Indicated by cathode band –100 T A = Position 25°C : Any • Mounting • Weight : 500 Approximated 0.011 gram 450 400 350 MAXIMUM 300 –0.8 V CE , COLLECTOR TO EMITTER VOLTAGE (V) Fig.3 Grounded emitter output characteristics( ) –80 –0.4 I B =0 0.040(1.0) 0.024(0.6) –2.0 –50 –100 0.50 0.70 0.9 0.85 0.5 –0.2 0.92 Vo mA I C /I B = 50 10 20 –0.1 10 –0.05 –0.2 –0.5 –1 –2 –5 –10 –20 –50 –100 I C, COLLECTOR CURRENT (mA) WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA812xLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to Fig.8 Gain bandwidth product vs. emitter current 0.146(3.7) 0.130(3.3) MIL-STD-19500 /228 –0.2 product for packing code suffix "G" • RoHS Halogen free product for packing code suffix "H" T A = 100°C Mechanical data 25°C –0.1 –40°C • Epoxy : UL94-V0 rated flame retardant Case : Molded plastic, SOD-123H •–0.05 , • Terminals :Plated terminals, solderable per MIL-STD-750 Method 2026 –1 –2 –0.2 –0.5 –5 –10 –20 –50 0.012(0.3) Typ. 1000 f r , TRANSITION FREQUENCY(MHz) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) optimize board space. Fig.7 Collector-emitter saturation voltage vs. • Low power loss, high efficiency. collector current ( ) low forward voltage drop. • High current capability, –1 surge capability. • High I C /I B = 10 • Guardring for overvoltage protection. Ultra high-speed switching. • –0.5 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of T A = 25°C V CE = –12V 0.071(1.8) 0.056(1.4) 500 200 100 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. 50 –0.2 –100 • Polarity : Indicated by cathode band (mA) I C, COLLECTOR CURRENT • Mounting Position : Any • Weight : Approximated 0.011 gram –0.5 –1 –2 –5 –10 –20 –50 –100 Dimensions in inches (mA) and (millimeters) I E, EMITTER CURRENT C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) Fig.9 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ 20 ambient temperature unless otherwise specified. T A = 25°C Single phase half wave, 60Hz, resistive of inductive load. f =1MHz C ib I E = 0A For capacitive load, derate current by 20% 10 I C = 0A SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U RATINGS Marking Code Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 V 5 Maximum RMS Voltage VRMS 14 21 28 35 42 56 70 105 140 V Maximum DC Blocking Voltage VDC 20 30 40 50 60 80 100 150 200 V Maximum Average 2Forward Rectified Current IO IFSM C ob Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance –0.5 (Note–12) –2 –5 RΘJA–10 Typical Junction Capacitance V(Note 1) CJ , COLLECTOR TO BASE VOLTAGE (V) CB Operating Temperature Range TJ (V) V EB, EMITTER TO BASE VOLTAGE Storage Temperature Range 1.0 30 –20 40 120 -55 to +125 A A ℃ -55 to +150 - 65 to +175 TSTG CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U VF Maximum Forward Voltage at 1.0A DC Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 V m NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012- WILLAS ELECTRONIC CORP WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA812xLT1 THRU General Purpose Transistors FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features offers • Batch process design, excellent power dissipation SOT-23 better reverse leakage current and thermal resistance. SOD-123H .006(0.15)MIN. • Low profile surface mounted application in order to optimize board space. .063(1.60) .047(1.20) • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. .122(3.10) • Guardring for overvoltage protection. .106(2.70) • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) .110(2.80) Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .083(2.10) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. .008(0.20) Method 2026 .080(2.04) • Polarity : Indicated by cathode band .070(1.78) .003(0.08) Dimensions in inches and (millimeters) • Mounting Position : Any • Weight : Approximated 0.011 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code VRRM Maximum Recurrent Peak Reverse Voltage 12 20 .020(0.50) 14 VRMS .012(0.30) 20 VDC Maximum RMS Voltage Maximum DC Blocking Voltage IO Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Dimensions 13 30 21 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo 28 35 42 56 70 105 140 Vo 40 50 60 80 100 150 200 Vo .055(1.40) .035(0.89) Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. .004(0.10)MAX. For capacitive load, derate current by 20% 1.0 30 Maximum Average Forward Rectified Current superimposed on rated load (JEDEC method) in inches and (millimeters) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range 40 120 -55 to +125 Am Am ℃ P -55 to +150 ℃ - 65 to +175 TSTG ℃ CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH 0.037 FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN Maximum Forward Voltage at 1.0A DC 0.037 Maximum Average Reverse Current at @T A=25℃ 0.95 Rated DC Blocking Voltage VF @T A=125℃ 0.50 0.95 0.70 0.85 0.5 IR 0.9 0.92 Vo 10 mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 0.079 2.0 2- Thermal Resistance From Junction to Ambient 0.035 0.9 0.031 0.8 2012-06 2012- inches mm WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.