2N7002KWT1(SOT 323)

ϮEϳϬϬϮ<tdϭ
ϯϴ0mA EͲĐŚĂŶŶĞů^ŵĂůů^ŝŐŶĂůDK^&d - ϲ0V
SOT-ϯ23
Package
SOT–323 (SC–70)
Features
• ESD Protected
• Low RDS(on)
• Surface Mount Package
• This is a Pb−Free Device
• We declare that the material of product are Halogen Free and
Simplified Schematic
compliance with RoHS requirements.
Gate
• S- Prefix for Automotive and Other Applications Requiring
1
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Drain−to−Source Voltage
Gate−to−Source Voltage
t<5s
TA = 25°C
TA = 85°C
Symbol
Value
Unit
VDSS
60
V
VGS
±20
ID
V
320
230
380
270
TA = 25°C
TA = 85°C
Power Dissipation (Note 1)
Steady State
t<5s
PD
Pulsed Drain Current (tp = 10 ms)
IDM
1.5
A
Operating Junction and Storage
Temperature Range
TJ, TSTG
−55 to
+150
°C
Source Current (Body Diode)
IS
300
mA
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
ESD
2000
V
Gate−Source ESD Rating
(HBM, Method 3015)
MARKING DIAGRAM
& PIN ASSIGNMENT
mA
Pr
el
Drain Current (Note 1)
Steady State
(Top View)
Marking Code : 6.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Rating
Drain
2
ry
Source
im
ina
Applications
• Low Side Load Switch
• Level Shift Circuits
• DC−DC Converter
• Portable Applications i.e. DSC, PDA, Cell Phone, etc.
3
mW
300
420
V(BR)DSS
RDS(on) MAX
ID MAX
(Note 1)
60 V
2.3 W @ 10 V
380 mA
2.7 W @ 5.0 V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Junction−to−Ambient − Steady State
(Note 1)
RqJA
417
°C/W
Junction−to−Ambient − t ≤ 5 s (Note 1)
RqJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
2014.08
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Rev. 第1頁
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SOT-ϯ23
Package
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Units
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
71
VGS = 0 V,
VDS = 60 V
VGS = 0 V,
VDS = 50 V
Gate−to−Source Leakage Current
IGSS
V
mV/°C
TJ = 25°C
1
TJ = 125°C
500
TJ = 25°C
100
nA
±10
mA
VDS = 0 V, VGS = ±20 V
mA
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = VDS, ID = 250 mA
VGS(TH)/TJ
RDS(on)
gFS
CISS
COSS
CRSS
Threshold Gate Charge
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
2
4.0
VGS = 5.0 V, ID = 50 mA
2.7
VDS = 5 V, ID = 200 mA
VGS = 0 V, f = 1 MHz,
VDS = 25 V
VGS = 4.5 V, VDS = 10 V;
ID = 500 mA
V
mV/°C
2.3
QG(TOT)
QG(TH)
1.2
VGS = 10 V, ID = 500 mA
Pr
el
Total Gate Charge
VGS(TH)
im
ina
Gate Threshold Voltage
ry
ON CHARACTERISTICS (Note 2)
W
80
mS
34
pF
3
2.2
nC
0.71
0.1
0.32
0.16
SWITCHING CHARACTERISTICS, VGS = V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
Fall Time
ns
3.8
VDS = 10 V, VGEN = 10 V,
ID = 500 mA
tf
3.4
19
12
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 115 mA
TJ = 25°C
TJ = 85°C
1.2
V
0.7
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
2014.08
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Rev. 第2頁
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SOT-ϯ23
Package
TYPICAL ELECTRICAL CHARACTERISTICS
0.4
VGS= 5,6,7.8,9.10 V
4.0 V
0.6
0.4
0.5
1.0
o
Tj=125 C
o
Tj=25 C
1.5
ry
2.5
2.0
o
Tj=-55 C
0.0
3.0
0
1
2
3
4
5
6
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
Pr
el
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5.0
4.5
4.0
3.5
VGS= 10V
O
TJ= 125 C
O
TJ= 85 C
3.0
2.5
O
2.0
1.5
TJ= 25 C
O
TJ= -55 C
1.0
0.5
0.0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
2014.08
0.2
im
ina
0.0
0.0
0.3
0.1
3.0 V
0.2
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
0.8
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
1.0
6.0
5.5
VGS= 5.0V
O
TJ= 125 C
5.0
4.5
O
TJ= 85 C
4.0
3.5
O
TJ= 25 C
3.0
2.5
2.0
O
1.5
TJ= -55 C
1.0
0.5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
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ϯϴ0mA EͲĐŚĂŶŶĞů^ŵĂůů^ŝŐŶĂůDK^&d - ϲ0V
SOT-ϯ23
Package
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
10
ID = 0.5 A
ID= 0.5 A
9
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
8
7
6
5
3
VGS= 10 V
1.0
0.8
2
3
4
5
6
7
8
9
o
[email protected]= 25 C: 2.7 Ω
0.4
-50 -25
10
o
[email protected]= 25 C: 2.3 Ω
im
ina
1
0
25
50
75 100 125 150
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance vs. Gate−to−Source
Voltage
Figure 6. On−Resistance Variation with
Temperature
Pr
el
60
Ciss
45
40
35
30
25
20
15
Coss
10
5
Crss
0
5
10
15
20
25
30
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
50
0
4.5
Frequency = 1 MHz
55
2014.08
1.2
0.6
2
1
VGS= 5.0 V
1.4
ry
4
1.6
4.0
VDS= 10 V
IDS= 0.5 A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
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Rev. 第4頁
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ϯϴ0mA EͲĐŚĂŶŶĞů^ŵĂůů^ŝŐŶĂůDK^&d - ϲ0V
SOT-ϯ23
Package
TYPICAL ELECTRICAL CHARACTERISTICS
1
o
Tj= 150 C
o
ry
Tj =25 C
im
ina
IS, SOURCE CURRENT (A)
2
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Pr
el
Figure 9. Diode Forward Voltage vs. Current
2014.08
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Rev. 第5頁
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SOT-ϯ23
Package
Outline Drawing
.004(0.10)MIN.
SOT-323
.056(1.40)
.096(2.45)
.078(2.00)
Pr
eli
m
ina
ry
.054(1.35)
.045(1.15)
.087(2.20)
.070(1.80)
.010(0.25)
.003(0.08)
.047(1.20)
.016(0.40)
.008(0.20)
.043(1.10)
.032(0.80)
.004(0.10)MAX.
Dimensions in inches and (millimeters)
Rev.D
2014.08
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Rev. 第6頁
ϯϴ0mA EͲĐŚĂŶŶĞů^ŵĂůů^ŝŐŶĂůDK^&d - ϲ0V
SOT-ϯ23
ϮEϳϬϬϮ<tdϭ
Package
SOT-323
Pr
eli
m
.35(0.90)
ina
ry
Suggested Soldering Pad Layout
.039(1.00)
.023(0.60)
Dimensions in inches and (millimeters)
2014.08
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RevA
Rev. 第7頁
ϯϴ0mA EͲĐŚĂŶŶĞů^ŵĂůů^ŝŐŶĂůDK^&d - ϲ0V
SOT-ϯ23
ϮEϳϬϬϮ<tdϭ
Package
Ordering Information: Device PN ϮEϳϬϬϮ<tdϭ -T
(1) G(2)-WS
Note: (1) Packing code, Tape & Reel Packing Packing Tape&Reel: ϯ Kpcs/Reel (2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” ina
ry
***Disclaimer*** Pr
el
im
WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2014.08
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Rev. 第8頁
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