WEW'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ SOT-ϭϭ23 DN^dϯϵϬϲ&ϯdϱ Package The0NST3906F3T5 device is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. SOT−1123 3 1 CASE 524AA STYLE 1 Features • • • • 2 hFE, 100−300 Low VCE(sat), ≤ 0.4 V Reduces Board Space This is a Pb−Free Device COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCBO −40 Vdc Emitter −Base Voltage VEBO −5.0 Vdc IC −200 mAdc Collector Current − Continuous Symbol Max Unit Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 1) 290 2.3 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 432 °C/W Total Device Dissipation, TA = 25°C Derate above 25°C PD (Note 2) 347 2.8 mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 360 °C/W Thermal Resistance, Junction−to−Lead 3 R q JL (Note 2) 143 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature Range 3M 3 M THERMAL CHARACTERISTICS Characteristic MARKING DIAGRAM = Device Code = Date Code ORDERING INFORMATION Device MNST3906F3T5 Package Shipping† SOT−1123 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 100 mm2 1 oz, copper traces. 2. 500 mm2 1 oz, copper traces.0 2014.0ϵ www.willas.com.tw Rev. A 第1頁 WEW'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ SOT-ϭϭ23 DN^dϯϵϬϲ&ϯdϱ Package ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO −40 − Vdc Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO −40 − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc Collector Cutoff Current (VCE = 30 Vdc, VBE = 3.0 Vdc) ICEX − −50 nAdc 60 80 100 60 30 − − 300 − − − − −0.25 −0.4 −0.65 − −0.85 −0.95 OFF CHARACTERISTICS ON CHARACTERISTICS (Note 3) DC Current Gain (IC = −0.1 mAdc, VCE = −1.0 Vdc) (IC = −1.0 mAdc, VCE = −1.0 Vdc) (IC = −10 mAdc, VCE = −1.0 Vdc) (IC = −50 mAdc, VCE = −1.0 Vdc) (IC = −100 mAdc, VCE = −1.0 Vdc) hFE Collector −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mAdc, IB = −1.0 mAdc) (IC = −50 mAdc, IB = −5.0 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT 250 − MHz Output Capacitance (VCB = −5.0 V, IE = 0 mA, f = 1.0 MHz) Cobo − 4.5 pF Input Capacitance (VEB = −0.5 V, IE = 0 mA, f = 1.0 MHz) Cibo − 10.0 pF Noise Figure (VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 kW, f = 1.0 kHz) NF − 4.0 dB SWITCHING CHARACTERISTICS Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc) td − 35 Rise Time (IC = −10 mAdc, IB1 = −1.0 mAdc) tr − 35 Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc) ts − 250 Fall Time (IB1 = IB2 = −1.0 mAdc) tf − 50 ns ns 3. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%. 0.35 350 150°C (5.0 V) IC/IB = 10 hFE, DC CURRENT GAIN (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 0.40 VCE(sat) = 150°C 0.30 0.25 0.20 25°C 0.15 0.10 −55°C 0.05 150°C (1.0 V) 250 200 150 100 25°C (5.0 V) 25°C (1.0 V) −55°C (5.0 V) −55°C (1.0 V) 50 0 0 0.0001 1 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 2014.0ϵ 300 0.0001 0.001 0.1 0.01 IC, COLLECTOR CURRENT (A) 1 Figure 2. DC Current Gain vs. Collector Current www.willas.com.tw Rev. A 第2頁 WEW'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ SOT-ϭϭ23 Package 1.1 1.1 VBE(on), BASE−EMITTER TURN−ON VOLTAGE (V) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 1.0 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C VCE = 2.0 V 1.0 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.3 0.0001 0.001 0.01 0.1 0.0001 1 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Turn−On Voltage vs. Collector Current 1.0 9.0 100 mA 0.9 Cibo, INPUT CAPACITANCE (pF) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) DN^dϯϵϬϲ&ϯdϱ 0.8 80 mA 0.7 60 mA 0.6 40 mA 0.5 0.4 0.3 20 mA 0.2 0.1 0 IC = 10 mA 0.0001 8.0 7.0 6.0 Cib 5.0 4.0 3.0 0.001 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Ib, BASE CURRENT (A) Veb, EMITTER BASE VOLTAGE (V) Figure 5. Saturation Region Figure 6. Input Capacitance 4.5 5.0 Cobo, OUTPUT CAPACITANCE (pF) 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 Cob 1.5 1.0 0 5.0 10 15 20 25 30 Vcb, COLLECTOR BASE VOLTAGE (V) Figure 7. Output Capacitance 2014.0ϵ www.willas.com.tw Rev. A 第3頁 WEW'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ SOT-ϭϭ23 DN^dϯϵϬϲ&ϯdϱ Package PACKAGE DIMENSIONS SOT−1123 −X− D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− 1 E 3 2 b e 0.08 (0.0032) X Y A c L HE DIM A b b1 c D E e HE L MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.10 0.15 0.20 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.35 0.95 1.00 1.05 0.05 0.10 0.15 SOLDERING FOOTPRINT* 0.35 INCHES NOM 0.015 0.008 0.006 0.005 0.031 0.024 0.014 0.037 0.039 0.002 0.004 MIN 0.013 0.006 0.004 0.003 0.030 0.022 MAX 0.016 0.010 0.008 0.007 0.033 0.026 0.041 0.006 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.30 0.25 0.90 0.40 DIMENSIONS: MILLIMETERS 2014.0ϵ www.willas.com.tw Rev. A 第4頁 WEW'ĞŶĞƌĂůWƵƌƉŽƐĞdƌĂŶƐŝƐƚŽƌ SOT-ϭϭ23 Package DN^dϯϵϬϲ&ϯdϱ Ordering Information: Device PN (2) MNST3906F3T5 -T(1) H -WS Note: (1) Packing code, Tape & Reel Packing Packing Tape&Reel: 8 Kpcs/Reel (2) Halogen free product for packing code suffix “H” ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life‐saving implant or other applications intended for life‐sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. 2014.0ϵ www.willas.com.tw Rev. A 第5頁