MMBD4448TW(SOT 363)

WILLAS
FM120-M+
MMBD4448TWTHRU
SOT-363
Plastic-Encapsulate Diode
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
SOT-363
Switching
profile surface mounted application in order to
• LowDiode
optimize board space.
FEATURES
• Low power loss, high efficiency.
z
Fast
Switching
Speed
current
capability, low forward voltage drop.
• High
High
surge
capability.
•
z
Ultra-Small Surface Mount Package
• Guardring for overvoltage protection.
z
For General Purpose Switching Applications
• Ultra high-speed switching.
z High
Conductance
epitaxialPower
planar Dissipation
chip, metal silicon junction.
• Silicon
Lead-free parts meet environmental standards of
•
package is available
z Pb-Free
MIL-STD-19500 /228
RoHS
product
forfor
packing
”G”
product
packingcode
codesuffix
suffix "G"
• RoHS
0.146(3.7)
0.130(3.3)
Halogen
product
packing code
code suffix
Halogen
freefree
product
forforpacking
suffix"H"
“H”
z
0.012(0.3) Typ.
6
5
4
1
2
3
Mechanical
data1
Moisture
Sensitivity Level
0.040(1.0)
0.024(0.6)
ina
ry
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
MARKING:KA3 Method 2026
• Polarity : Indicated by cathode band
Maximum Ratings @ Ta= 25°C unless otherwise specified
• Mounting Position : Any
Characteristic0.011 gram
Symbol
• Weight : Approximated
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
VRM
Non-Repetitive Peak Reverse Voltage
Value
Unit
100
V
RATINGS
Marking Code
Non-Repetitive Peak Forward Surge Current
Maximum Recurrent Peak Reverse Voltage
Maximum
RMS Voltage
Power
Dissipation
(Note 1)
Maximum
DC Blocking
Voltageto Ambient
Thermal
Resistance
Junction
IO
@ t < 1ms
RRM
@ t < V1s
VRMS
(Note 1) VDC
12
20
13
IFSM30
14
40
14
Pd 21
20 RqJA 30
IO
Tj , TSTG
Peak Forward Surge Current 8.3 ms single half
Ta = 25°C
unless otherwise
IFSM
Electrical
Characteristics @ sine-wave
15
50
superimposed on rated load (JEDEC method)
Characteristic
Typical Thermal Resistance
(Note 2)
RΘJA
Symbol
Reverse
Breakdown
Voltage (Note
(Note1)
2)
Typical Junction
Capacitance
CJ
V(BR)R
TJ
Operating Temperature Range
Storage Temperature
Range
Forward
Voltage (Note
2)
TSTG
CHARACTERISTICS
18
80
28
40
50 625 60
80
Reverse Current (Note 2)
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
-55~+150
specified
Min
75
-55 to
+125
0.62
VF
250
¾
¾
¾
Max
¾
0.720
0.855
1.0
1.25
mA
10
A
100
56
70
mW
100
°C/W
1.0
30
115
150
120
200
Vol
105
140
Vol
150
200
Vol
Am
°C
Am
Conditions
Unit 40
Test
V 120 IR = 10mA
-55 to +150
IF = 5.0mA
IF = 10mA
- 65 to +175
V
IF = 50mA
IF = 150mA
℃/
PF
℃
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
V = 75VFM1100-MH FM1150-MH FM1200-MH UN
VF
Maximum Forward Voltage at 1.0A DC
Total Capacitance
V
mA
16
4
1.5 60
35 200 42
Maximum and
Average
Forward
Rectified Current
Operating
Storage
Temperature
Range
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Pr
el
Average Rectified Output Current (Note 1)
im
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
VRRM
Peak Repetitive Reverse
Voltage
Working
Peak
Reverse
Voltage
75
Ratings at 25℃ ambient temperature unless otherwise specified. VRWM
VR
DC Blocking Voltage
Single phase half wave, 60Hz, resistive of inductive load.
VR(RMS)
RMS Reverse Voltage
53
For capacitive load, derate current by 20%
Forward
IFM
Continuous Current (Note 1)
500
0.071(1.8)
0.056(1.4)
@T A=125℃
NOTES: Recovery Time
Reverse
IR
0.50
¾
2.5
50
30
25
CT
¾
4.0
trr
¾
4.0
IR
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
mA
R
VR = 75V,
0.70mA
0.85Tj = 150°C 0.9
mA 0.5 VR = 25V, Tj = 150°C
VR = 20V
nA
10
VR = 0, f = 1.0MHz
pF
ns
0.92
Vol
mAm
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100W
Notes:
1. Resistance
Device mounted
on FR-4
PCB, 1 inch x 0.85 inch x 0.062 inch.
2- Thermal
From Junction
to Ambient
2. Short duration test pulse used to minimize self-heating.
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBD4448TWTHRU
SOT-363
Plastic-Encapsulate Diode
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-363
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
.004(0.10)MIN.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.087(2.20)
• Epoxy : UL94-V0 rated flame retardant .071(1.80)
.054(1.35)
.045(1.15)
Mechanical data
0.040(1.0)
0.024(0.6)
ina
ry
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
.030(0.75)
.021(0.55)
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
Maximum RMS Voltage
VRMS
14
21
28
35
Maximum DC Blocking Voltage
VDC
20
30
40
50
.056(1.40)
.047(1.20)
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
CJ
Typical Junction Capacitance (Note 1)
.004(0.10)MAX.
Operating Temperature Range
TJ
Storage Temperature Range
80
100
115
150
120
200
Vol
42
56
70
105
140
Vol
60
80
100
150
200
Vol
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
.010(0.25)
.003(0.08)
18
10
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Pr
el
Marking Code
.096(2.45)
.071(1.80)
im
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.012(0.3) Typ.
1.0
30
40
120
-55 to +125
Am
Am
℃/W
PF
-55 to +150
℃
- 65 to +175
TSTG
℃
CHARACTERISTICS
VF
.016(0.40)
IR
.004(0.10)
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
NOTES:
.043(1.10)
.032(0.80)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Maximum Forward Voltage at 1.0A DC
0.50
0.70
0.85
0.5
0.9
0.92
Vol
10
mAm
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-1
Rev.D CORP.
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
MMBD4448TW
THRU
SOT-363
Plastic-Encapsulate Diode
FM1200-M+
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
• High current capability, low forward voltage drop.
• High surge capability.
Device PN Packing • Guardring for overvoltage protection.
(1) (2)
MMBD4448TW‐T
Tape&Reel: 3 Kpcs/Reel switching. G ‐WS • Ultra high-speed
Silicon epitaxial planar chip, metal silicon junction.
•Note: (1)
Packing code, Tape & Reel Packing
• Lead-free parts meet environmental standards of
MIL-STD-19500
/228
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical
data
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
ina
ry
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃
ambient temperature unless otherwise specified.
Single phase
half
wave, 60Hz, resistive of inductive load.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability For
capacitive
load,
derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
VRRM
which may be included on WILLAS data sheets and/ or specifications can Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Volts
Maximum DC
Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
Amps
Maximum Average
Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forwarduse of any product or circuit. Surge Current 8.3 ms single half sine-wave
30
IFSM
Amps
superimposed on rated load (JEDEC method)
℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
PF
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction
Capacitance (Note 1)
CJ
Pr
el
im
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
-55 to +125
-55 to +150
TJ
℃
life‐saving implant or other applications intended for life‐sustaining or other related - 65 to +175
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
or indirectly cause injury or threaten a life without expressed written approval Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average
Reverse Current at @T A=25℃
IR
mAmp
10
@T A=125℃
Rated DC Blocking Voltage
such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
Inc and its subsidiaries harmless against all claims, damages and expenditures. Operating Temperature Range
Storage Temperature Range
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.