2SA1201(SOT 89)

WILLAS
FM120-M+
THRU
2SA1201
FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse
leakage current and thermal resistance.
TRANSISTOR
(PNP)
• Low profile surface mounted application in order to
optimize board space.
FEATURES
Low power loss, high efficiency.
•
z
High voltage
• High current capability, low forward voltage drop.
z
transition
frequency
High surge
capability.
•High
Guardringpackage
for overvoltage
protection.
•Pb-Free
z
is available
• Ultra high-speed switching.
packing
codesilicon
suffixjunction.
”G”
Siliconproduct
epitaxial for
planar
chip, metal
•RoHS
Lead-freefree
partsproduct
meet environmental
of “H”
•Halogen
for packingstandards
code suffix
SOD-123H
SOT-890.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
0.071(1.8)
0.056(1.4)
2. COLLECTOR
MIL-STD-19500 /228
for packing
code℃
suffix
"G"
• RoHS product
unless
otherwise noted)
MAXIMUM
RATINGS
(Ta=25
Halogen free product for packing code suffix "H"
Symbol
Parameter
Value
Mechanical data
3. EMITTER
Unit
VCBO
0.040(1.0)
0.024(0.6)
-120
V
Voltage
UL94-V0 rated
flame retardant
• Epoxy :Collector-Base
VCEO• Case : Molded
-120
V
Collector-Emitter
Voltage
plastic, SOD-123H
,
VEBO• Terminals
-5
:Plated terminals,
Emitter-Base
Voltage solderable per MIL-STD-750 V
PC
TJ
Tstg
0.031(0.8) Typ.
ina
ry
IC
0.031(0.8) Typ.
Method
2026-Continuous
Collector
Current
-0.8
A
0.5
W
150
℃
-55-150
℃
• Polarity : Indicated by cathode band
Collector Power Dissipation
• Mounting Position : Any
Junction Temperature
• Weight : Approximated 0.011 gram
Storage Temperature
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
im
Ratings at 25℃ ambient temperature unless otherwise specified.
ELECTRICAL
CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Single phase half wave, 60Hz, resistive of inductive load.
For capacitiveParameter
load, derate current by 20%
RATINGS
Maximum Recurrent Peak Reverse Voltage
Collector-emitter breakdown voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Emitter-base breakdown voltage
Maximum Average Forward Rectified Current
Collector cut-off current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Emitter cut-off current
V(BR)CBO
VRRM
VV(BR)CEO
RMS
VDC
V(BR)EBO
IO
I
CBO
IFSM
IEBO
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
DC current gain
hFE
Storage Temperature Range
Collector-emitter saturation voltage
CHARACTERISTICS
Base-emitter voltage
Maximum Forward Voltage at 1.0A DC
TSTG
VCE(sat)
Rated DC Blocking Voltage
Min
Typ
Max
Unit
IC=-1mA,I
12
13E=0
20
30
14
40
15
50
16
60
-120
18
IC=-10mA,I
=0 28
14
21 B
35
42
-12056
20
50
60
80
30
IE=-1mA,IC=0
40
1.0
30
VCB=-120V,IE=0
VEB=-5V,I C=0
40
120
VCE=-5V,IC=-100mA
-55 to +125
-5
115
150
V120
70
105
V 140
Volts
100
150
200
Volts
10
100
80
80
-55 to +150
- 65 to +175
IC=-500mA,IB=-50mA
200
V
-0.1
μA
-0.1
μA
Volts
Amps
Amps
℃/W
PF
240
-1
℃
℃
V
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VBE
VF
Maximum
Average
Reverse Current at @T A=25℃
Transition
frequency
Test conditions
Pr
el
Collector-base
breakdown voltage
Marking
Code
Symbol
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
@T A=125℃
Collector output capacitance
NOTES:
VCE=-5V,IC=-500mA
0.50
IRfT
VCE=-5V,IC=-100mA
Cob
VCB=-10V,IE=0,f=1MHz
0.70
0.85
0.5
-1
0.9
120
10
V
0.92
MHz
30
Volts
mAmps
pF
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION OF hFE
Rank
Range
Marking
2012-06
2012-0
O
Y
80-160
120-240
DO
DY
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SA1201
THRU
FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
better reverse leakage current and thermal resistance.
SOT-89
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.181(4.60)
Mechanical data
0.040(1.0)
0.024(0.6)
.173(4.39)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.061REF
Method 2026
0.031(0.8) Typ.
0.031(0.8) Typ.
ina
ry
.063(1.60)
.055(1.40)
(1.55)REF
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
IO
IFSM
12
20
13
30
.091(2.30)
14
15
40
50
16
60
18
80
10
100
115
150
120
200
Volt
21
28
35
42
56
70
105
140
Volt
30
40
50
60
80
100
150
200
Volt
Pr
el
.154(3.91)
.102(2.60)
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
SYMBOL FM120-MH FM130-MH FM140-MH
RATINGS
.167(4.25)
Marking Code
im
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Peak Forward.047(1.2)
Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
.031(0.8)
.023(0.58)
14
.016(0.40)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
.060TYP
(1.50)TYP
CHARACTERISTICS
TSTG
1.0
30
Amp
Amp
40
120
-55 to +125
℃/W
PF
-55 to +150
℃
- 65 to +175
.197(0.52)
.013(0.32)
℃
.017(0.44)
.014(0.35)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI
Maximum Average Reverse Current at
.118TYP
VF
(3.0)TYP
@T A=25℃
Rated DC Blocking Voltage
@T A=125℃
Maximum Forward Voltage at 1.0A DC
20
0.50
0.70
0.85
0.5
IR
0.9
0.92
Volt
10
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
Rev.C CORP.
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2SA1201
FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+
PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
Device PN Packing 0.130(3.3)
low forward voltage drop.
• High current capability,
(3)
surge capability.
• High2SA1201 x
–SOT89 (1)G(2)‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection.
CASE:SOT‐89 Ultra high-speed switching.
•Note: (1)
epitaxial planar chip, metal silicon junction.
• Silicon
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
MIL-STD-19500
(3) CLASSIFICATION OF h
FE RANK /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
ina
ry
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product im
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak
Reverse
Voltage
Volts
V
RRM
contained are intended to provide a product description only. "Typical" parameters Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Amp
Maximum Average
Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward
Surge Current 8.3 ms single half sine-wave
30
IFSM
Amp
superimposed on rated load (JEDEC method)
use of any product or circuit. ℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
PF
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operating Temperature
Range
T
J
℃
WILLAS products are not designed, intended or authorized for use in medical, Pr
el
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20%
Storage Temperature Range
TSTG
- 65 to +175
℃
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
applications where a failure or malfunction of component or circuitry may directly Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average
Reverse Current at @T A=25℃
IR
mAmp
10
@T A=125℃
Rated DC Blocking
Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures. 2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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