WILLAS FM120-M+ THRU 2SA1201 FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (PNP) • Low profile surface mounted application in order to optimize board space. FEATURES Low power loss, high efficiency. • z High voltage • High current capability, low forward voltage drop. z transition frequency High surge capability. •High Guardringpackage for overvoltage protection. •Pb-Free z is available • Ultra high-speed switching. packing codesilicon suffixjunction. ”G” Siliconproduct epitaxial for planar chip, metal •RoHS Lead-freefree partsproduct meet environmental of “H” •Halogen for packingstandards code suffix SOD-123H SOT-890.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1. BASE 0.071(1.8) 0.056(1.4) 2. COLLECTOR MIL-STD-19500 /228 for packing code℃ suffix "G" • RoHS product unless otherwise noted) MAXIMUM RATINGS (Ta=25 Halogen free product for packing code suffix "H" Symbol Parameter Value Mechanical data 3. EMITTER Unit VCBO 0.040(1.0) 0.024(0.6) -120 V Voltage UL94-V0 rated flame retardant • Epoxy :Collector-Base VCEO• Case : Molded -120 V Collector-Emitter Voltage plastic, SOD-123H , VEBO• Terminals -5 :Plated terminals, Emitter-Base Voltage solderable per MIL-STD-750 V PC TJ Tstg 0.031(0.8) Typ. ina ry IC 0.031(0.8) Typ. Method 2026-Continuous Collector Current -0.8 A 0.5 W 150 ℃ -55-150 ℃ • Polarity : Indicated by cathode band Collector Power Dissipation • Mounting Position : Any Junction Temperature • Weight : Approximated 0.011 gram Storage Temperature Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS im Ratings at 25℃ ambient temperature unless otherwise specified. ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Single phase half wave, 60Hz, resistive of inductive load. For capacitiveParameter load, derate current by 20% RATINGS Maximum Recurrent Peak Reverse Voltage Collector-emitter breakdown voltage Maximum RMS Voltage Maximum DC Blocking Voltage Emitter-base breakdown voltage Maximum Average Forward Rectified Current Collector cut-off current Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Emitter cut-off current V(BR)CBO VRRM VV(BR)CEO RMS VDC V(BR)EBO IO I CBO IFSM IEBO RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ DC current gain hFE Storage Temperature Range Collector-emitter saturation voltage CHARACTERISTICS Base-emitter voltage Maximum Forward Voltage at 1.0A DC TSTG VCE(sat) Rated DC Blocking Voltage Min Typ Max Unit IC=-1mA,I 12 13E=0 20 30 14 40 15 50 16 60 -120 18 IC=-10mA,I =0 28 14 21 B 35 42 -12056 20 50 60 80 30 IE=-1mA,IC=0 40 1.0 30 VCB=-120V,IE=0 VEB=-5V,I C=0 40 120 VCE=-5V,IC=-100mA -55 to +125 -5 115 150 V120 70 105 V 140 Volts 100 150 200 Volts 10 100 80 80 -55 to +150 - 65 to +175 IC=-500mA,IB=-50mA 200 V -0.1 μA -0.1 μA Volts Amps Amps ℃/W PF 240 -1 ℃ ℃ V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT VBE VF Maximum Average Reverse Current at @T A=25℃ Transition frequency Test conditions Pr el Collector-base breakdown voltage Marking Code Symbol SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT @T A=125℃ Collector output capacitance NOTES: VCE=-5V,IC=-500mA 0.50 IRfT VCE=-5V,IC=-100mA Cob VCB=-10V,IE=0,f=1MHz 0.70 0.85 0.5 -1 0.9 120 10 V 0.92 MHz 30 Volts mAmps pF 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient CLASSIFICATION OF hFE Rank Range Marking 2012-06 2012-0 O Y 80-160 120-240 DO DY WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SA1201 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing better reverse leakage current and thermal resistance. SOT-89 SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .181(4.60) Mechanical data 0.040(1.0) 0.024(0.6) .173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .061REF Method 2026 0.031(0.8) Typ. 0.031(0.8) Typ. ina ry .063(1.60) .055(1.40) (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current IO IFSM 12 20 13 30 .091(2.30) 14 15 40 50 16 60 18 80 10 100 115 150 120 200 Volt 21 28 35 42 56 70 105 140 Volt 30 40 50 60 80 100 150 200 Volt Pr el .154(3.91) .102(2.60) FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI SYMBOL FM120-MH FM130-MH FM140-MH RATINGS .167(4.25) Marking Code im Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% Peak Forward.047(1.2) Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .031(0.8) .023(0.58) 14 .016(0.40) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS TSTG 1.0 30 Amp Amp 40 120 -55 to +125 ℃/W PF -55 to +150 ℃ - 65 to +175 .197(0.52) .013(0.32) ℃ .017(0.44) .014(0.35) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNI Maximum Average Reverse Current at .118TYP VF (3.0)TYP @T A=25℃ Rated DC Blocking Voltage @T A=125℃ Maximum Forward Voltage at 1.0A DC 20 0.50 0.70 0.85 0.5 IR 0.9 0.92 Volt 10 mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.C CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS FM120-M+ THRU 2SA1201 FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. Device PN Packing 0.130(3.3) low forward voltage drop. • High current capability, (3) surge capability. • High2SA1201 x –SOT89 (1)G(2)‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection. CASE:SOT‐89 Ultra high-speed switching. •Note: (1) epitaxial planar chip, metal silicon junction. • Silicon (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of MIL-STD-19500 (3) CLASSIFICATION OF h FE RANK /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Ordering Information: 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) Mechanical data Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. ina ry • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.031(0.8) Typ. Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS WILLAS reserves the right to make changes without notice to any product im changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS for any errors or inaccuracies. Data sheet specifications and its information Marking Code 12 13 14 15 16 18 10 115 120 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts V RRM contained are intended to provide a product description only. "Typical" parameters Volts 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS which may be included on WILLAS data sheets and/ or specifications can Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC and do vary in different applications and actual performance may vary over time. Amp Maximum Average Forward Rectified Current IO 1.0 WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amp superimposed on rated load (JEDEC method) use of any product or circuit. ℃/W 40 Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range T J ℃ WILLAS products are not designed, intended or authorized for use in medical, Pr el Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% Storage Temperature Range TSTG - 65 to +175 ℃ life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT applications where a failure or malfunction of component or circuitry may directly Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 or indirectly cause injury or threaten a life without expressed written approval 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmp 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Inc and its subsidiaries harmless against all claims, damages and expenditures. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.