2SB1440(SOT 89)

WILLAS
FM120-M+
2SB1440 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse
TRANSISTOR
(PNP)leakage current and thermal resistance.
• Low profile surface mounted application in order to
FEATURES
optimize board space.
power loss, high efficiency.
• Low
z
Low
collector-emitter
saturation voltage VCE(sat)
• High current capability, low forward voltage drop.
z
For low-frequency output amplification
• High surge capability.
z
Pb-Free
package
is available
for overvoltage
protection.
• Guardring
high-speed
• Ultraproduct
RoHS
forswitching.
packing code suffix ”G”
• Silicon epitaxial planar chip, metal silicon junction.
Halogen
free
product for packing code suffix “H”
parts meet environmental standards of
• Lead-free
SOD-123H
SOT-89
0.146(3.7)
0.130(3.3)
2. COLLECTOR
Moisture
Sensitivity
MIL-STD-19500
/228 Level 1
• RoHS product for packing code suffix "G"
z
Value
Unit
: UL94-V0 ratedVoltage
flame retardant
VCBO • EpoxyCollector-Base
-50
V
: Molded plastic, SOD-123H
Voltage
VCEO • Case Collector-Emitter
-50
VEBO
• Terminals :Plated terminals, solderable per MIL-STD-750
IC
Collector Current -Continuous
• Polarity
: Indicated by cathode band
Collector
Power
: AnyDissipation
• Mounting Position
Junction
Temperature
• Weight
: Approximated
0.011 gram
PC
TJ
Emitter-Base Voltage
Tstg
-5
V
-2
A
500
mW
150
℃
-55~150
℃
Method 2026
Storage Temperature
2
3
0.040(1.0)
0.024(0.6)
V
,
0.071(1.8)
0.056(1.4)
1
3. EMITTER
MAXIMUM
RATINGS (Ta=25℃ unless otherwise noted)
Halogen free product for packing code suffix "H"
Mechanical data
Symbol
Parameter
0.012(0.3) Typ.
1. BASE
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient
temperature unless otherwise
specified.
ELECTRICAL
CHARACTERISTICS
(Ta=25℃
unless otherwise specified)
Single phase half wave, 60Hz, resistive of inductive load.
Parameter
Symbol
For capacitive
load, derate current by 20%
RATINGS
V(BR)CBO
Maximum Recurrent Peak Reverse Voltage
Marking Code
Collector-emitter breakdown voltage
Maximum
DC Blocking
Voltage
Emitter-base
breakdown
14
40
15
50
16
60
VRMS
14
21
28
35
42
40
50
60
IFSM
RΘJA
Operating
Temperature
DC current
gain Range
J
hC
FE1
VCE=-2V,
=
IC TSTG
hFE2
VCE=-2V,
=
IC -1A
TJ
Storage Temperature Range
-200mA
-55 to +125
Transition frequency
@T A=125℃
NOTES:
Unit
-50
-50
18
80
10
100
115
150
56
70
105
100
150
-5 80
40
120120
V
120
200
Vol
140
Vol
V 200
Vol
V
-1
μA
-1
μA
Am
Am
℃/W
PF
340
-55 to +150
℃
- 65 to +175
60
VF
0.50
0.70
IC=-1A, IB -50mA
VBE(sat)
Base- emitter
voltage
Maximum
Averagesaturation
Reverse Current
at @T A=25℃ =
Max
℃
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH-0.3
FM1150-MHV
FM1200-MH
=
IC=-1A,FM130-MH
IB -50mA
V
SYMBOL
CE(sat) FM120-MH
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
Typ
1.0
30
=
VEB=-5V, IC 0
IEBO
Typical Junction Capacitance (Note 1)
CHARACTERISTICS
Collector-emitter
saturation voltage
IE20
=-10μA,30IC=0
IO
Peak Forward Surge Current 8.3 ms single half sine-wave
13
30
=
VCB=-50V, IE 0
I CBO
Collector cut-off current
Typical Thermal Resistance (Note 2)
VRRM
12
20
VDC
V(BR)EBO
voltage
superimposed
on rated
load (JEDEC method)
Emitter cut-off
current
IC=-10μA, IE=0
=
V(BR)CEO IC=-1mA, IB 0
Maximum Average Forward Rectified Current
Min
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Collector-base breakdown voltage
Maximum RMS Voltage
Test conditions
0.5
IR
VCE=-10V,
=
IC 50mA,
=f 200MHz
fT
1Measured atoutput
1 MHZ and
applied reverse voltage of 4.0 VDC.C
Collector
capacitance
ob
0.85
10
0.9
-1..2
80
VCB=-10V, IE=0, f=1MHz
0.92
V
UN
Vol
mAm
MHz
60
pF
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION OF h FE1
Rank
Range
Marking
2012-06
2012-0
R
S
120-240
170-340
1L
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1440THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Typical Characteristics
Package outlineh
Static Characteristic
-0.22
Features
Pb Free Product
FE
VCE= -2V
-1.0mA
COMMONoffers
Batch process design, excellent
power dissipation
•- 0.20
EMITTER
SOD-123H
a
optimize board space.
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
o
hFE
-0.8mA
Low power loss, high efficiency. -0.7mA
•- 0.15
• High current capability, low forward voltage drop.
-0.6mA
• High surge capability.
Guardring for overvoltage protection. -0.5mA
•- 0.10
• Ultra high-speed switching.
-0.4mA
• Silicon epitaxial planar chip, metal silicon junction.
-0.3mAof
• Lead-free parts meet environmental standards
T =100 C
o
Ta=25 C
- 2
100
IB=-0.1mA
50
- 3
- 4
- 6
5
- 1E-3
- 7
• Epoxy : UL94-V0 rated flame retardant(V)
COLLECTOR-EMITTER VOLTAGE V
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
COLLECTOR CURRENT
Method 2026
VCEsat —— IC
Polarity : Indicated by cathode band
•
• Mounting Position : Any
• Weight : Approximated 0.011 gram
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
(A)
0.031(0.8) Typ.
IC
Dimensions in inches and (millimeters)
- 1000
Ratings at 25℃ ambient temperature unless otherwise specified.
- 100
Single phase
half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
- 900
- 800
Ta=25℃
- 700
600
Ta=100℃FM1150-MH FM1200-MH UNI
FM150-MH FM160-MH FM180-MH FM1100-MH
SYMBOL FM120-MH FM130-MH- FM140-MH
Ta=100℃
VRRM
12
20
13
30
- 500
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Volts
Maximum RMS Voltage
VRMS
14
21
28
- 400
35
42
56
70
105
140
Volts
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
Volts
Ta=25℃
Maximum Recurrent Peak Reverse Voltage
Forward
- 0.01
- 1E-3Rectified Current
IO
IFSM
- 0.1
COLLECTOR CURRENT
I
(A)
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
/ C
ob
Typical Junction Capacitance C
(Note
1)ib
——
500
TJ
Storage Temperature Range
(pF)
CHARACTERISTICS
600
-55 to +125
- 0.1
IC
- 1
Amp
- 2
(A)
Amp
℃/W
Ta
PF
-55 to +150
℃
- 65 to +175
o
℃
500
VF
C
@T A=125℃
0.50
400
IR
Cib
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Cob
0.70
0.9
0.85
0.92
0.5
mAm
10
300
Volts
200
100
0
-1
REVERSE VOLTAGE
2012-0
40
P
——
120
c
β=20
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Average
Reverse Current at @T A=25℃
100
2012-06
1.0- 0.01
COLLECTOR CURRENT
30
- 1E-3
Ta=25 C
Maximum Forward Voltage at 1.0A DC
10
- 0.1
- 300
- 1E-4
- 2
f=1MHz
IE=0 / IC=0
TSTG
CAPACITANCE
- 1
RΘJA
VCB / VEBCJ
Operating Temperature Range
Rated DC Blocking Voltage
β=20
COLLECTOR POWER DISSIPATION
Pc (mW)
- 10
Maximum Average
- 1E-4
VBEsat ——
- 1100
- 2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Marking Code
IC
0.031(0.8) Typ.
- 700
0.040(1.0)
- 1
0.024(0.6)
- 0.1
- 0.01
CE
0.071(1.8)
0.056(1.4)
-0.2mA
Mechanical
data
0.00
- 1
0.012(0.3) Typ.
200
- 0.05
0
a
0.146(3.7)
0.130(3.3)
300
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(A)
better reverse leakage current
and thermal resistance.
-0.9mA
T =25℃
• Low profile surface mounted application in order to
•
—— IC
800
- 10
V (V)
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
150
(℃ )
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1440 THRU
FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-89
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code
suffix "H"
.181(4.60)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
.173(4.39)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.061REF
0.040(1.0)
0.024(0.6)
.063(1.60)
0.031(0.8) Typ.
0.031(0.8) Typ.
.055(1.40)
Method 2026
(1.55)REF
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.167(4.25)
RATINGS
.102(2.60)
.091(2.30)
14
15
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Marking
Code
.154(3.91)
Maximum Recurrent Peak Reverse Voltage
12
20
VRRM
.023(0.58)
13
30
40
50
16
60
18
80
10
100
115
150
120
200
Vo
Maximum RMS Voltage
14
VRMS
.016(0.40)
21
28
35
42
56
70
105
140
Vo
Maximum DC Blocking Voltage
VDC
30
40
50
60
80
100
150
200
Vo
Maximum Average Forward Rectified Current
IO
IFSM
.047(1.2)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed
on rated load (JEDEC method)
.031(0.8)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
TJ
TSTG
1.0
30
40
120
-55 to +125
.197(0.52)
.013(0.32)
Am
Am
-55 to +150
- 65 to +175
.017(0.44)
FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
.014(0.35)
.118TYP
0.9
0.92
VF
0.50
0.70
0.85
(3.0)TYP
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
20
@T A=125℃
0.5
IR
10
℃/
P
℃
℃
UN
Vo
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
Rev.C CORP.
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
2SB1440
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+
PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Device PN Packing 0.012(0.3) Typ.
• High current capability, low forward voltage drop.
(3)
(1) (2)
capability.–SOT89 G ‐WS • High surge
2SB1440 x
Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1) CASE:SOT‐89 0.071(1.8)
• Ultra high-speed switching.
0.056(1.4)
epitaxial planar chip, metal silicon junction.
• Silicon (2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
(3) CLASSIFICATION OF h
FE RANK MIL-STD-19500
/228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃ ambient temperature unless otherwise specified.
Single phasespecification herein, to make corrections, modifications, enhancements or other half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
for any errors or inaccuracies. Data sheet specifications and its information Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent
Peak
Reverse
Voltage
Volts
V
RRM
contained are intended to provide a product description only. "Typical" parameters Volts
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
and do vary in different applications and actual performance may vary over time. Amps
Maximum Average
Forward Rectified Current
IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Amps
superimposed on
rated load (JEDEC method)
use of any product or circuit. ℃/W
40
Typical Thermal Resistance (Note 2)
RΘJA
PF
120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55
to
+150
Operating Temperature
Range
T
J
℃
WILLAS products are not designed, intended or authorized for use in medical, Storage Temperature Range
TSTG
- 65 to +175
℃
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
applications where a failure or malfunction of component or circuitry may directly Volts
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAmps
10
@T A=125℃
Rated DC Blocking
Voltage
of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures. 2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
Similar pages