2SB1386(SOT 89)

WILLAS
FM120-M+
2SB1386 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process
TRANSISTOR
(PNP) design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
FEATURES
optimize board space.
power saturation
loss, high efficiency.
z
Low• Low
collector
voltage
• High current capability, low forward voltage drop.
z
Execllent current-to-gain characteristics
• High surge capability.
z
Pb-Free
package
is available
for overvoltage
protection.
• Guardring
high-speed
switching.
• Ultra
RoHS
product
for packing
code suffix ”G”
• Silicon epitaxial planar chip, metal silicon junction.
Halogen
free product
for
packing code
suffix “H”
parts meet
environmental
standards
of
• Lead-free
SOT-89
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
0.071(1.8)
0.056(1.4)
2. COLLECTOR
3. EMITTER
Moisture
Sensitivity
Level 1
MIL-STD-19500
/228
z
SOD-123H
• RoHS product for packing code suffix "G"
=25℃
unless
otherwise
noted)
MAXIMUM
RATINGS
(Tafor
Halogen
free product
packing
code suffix
"H"
data
SymbolMechanical
Parameter
VCBO
VCEO
VEBO
IC
ICP*
PC
Value
Unit
• Epoxy : UL94-V0 rated flame retardant
-30
Collector-Base Voltage
• Case : Molded plastic, SOD-123H
,
Collector-Emitter Voltage
-20
• Terminals :Plated terminals, solderable per MIL-STD-750
Emitter-Base
Voltage
Method
2026
• Polarity
: Indicated
by cathode
Continuous
Collector
Currentband
Position :Current
Any
• Mounting
Pulsed Collector
• Weight
: Approximated
0.011 gram
Collector
Power Dissipation
0.040(1.0)
0.024(0.6)
V
0.031(0.8) Typ.
V
-6
V
-5
A
-10
A
0.5
W
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Junction
Temperature
150
℃
MAXIMUM
RATINGS AND ELECTRICAL
CHARACTERISTICS
TJ
℃
Ratings atStorage
25℃ ambient
temperature unless otherwise-55~150
specified.
Temperature
Tstg
Single phase half wave, 60Hz, resistive of inductive load.
*Single pulse,PW=10ms
For capacitive load, derate current by 20%
ELECTRICAL CHARACTERISTICS
(Ta=25℃
unless
otherwise
specified)
FM130-MH FM140-MH
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
SYMBOL
FM120-MH
RATINGS
Marking Code
Maximum Recurrent
Peak Reverse Voltage
Parameter
Maximum RMS Voltage
Symbol
VRRM
VRMS
15
50
16
60
14
21
28
35
42
20
30
40
50
60
Collector-base
breakdown voltage
Maximum DC Blocking Voltage
V(BR)CBO
IC=-50μA,IE=0
Maximum Average Forward
Rectifiedvoltage
Current
Collector-emitter
breakdown
IO
V(BR)CEO
IC=-1mA,IB=0
VDC
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
V(BR)EBO
Emitter-base breakdown voltage
superimposed on rated load (JEDEC method)
RΘJA
ICBO
Typical Thermal
Resistance
(Note 2)
Collector
cut-off
current
CJ
Typical Junction Capacitance (Note 1)
TJ
IEBO
Operatingcut-off
Temperature
Range
Emitter
current
Storage Temperature Range
hFE
CHARACTERISTICS
Collector-emitter
saturation
Maximum Forward Voltage
at 1.0A voltage
DC
Maximum Average Reverse Current at @T A=25℃
Transition
frequency
Rated DC Blocking Voltage
IE=-50μA,IC=0
@T A=125℃
Collector
output capacitance
NOTES:
10
115
120
56
70
105
140
Vo
-30
80
100
150
200
Vo
40
120
VCB=-20V,IE=0
VEB
18
Min 80 Typ 100 Max 150 Unit 200
1.0-20
30-6
-55 =0
to +125
=-5V,I
C
- 65 to +175
TSTG
DC current gain
12
13
14
20
30
40
Test conditions
VCE=-2V,IC=-500mA
V
Vo
Am
V
Am
V
-0.5
μA
-55 to +150
-0.5
μA
℃
P
℃
℃
82
390
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VCE(sat)
VF
fTIR
Cob
IC=-4A,IB=-100mA
0.50
VCE=-6V,IC=-50mA,f=30MHz
VCB=-20V,IE=0,f=1MHz
0.70
0.85
0.5
10
-1
0.9
V
0.92
Vo
120
MHz
60
pF
mA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
CLASSIFICATION
OF hFE
Rank
Range
Marking
2012-06
2012-0
P
Q
R
82-180
120-270
180-390
BHP
BHQ
BHR
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1386 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Typical Characterisitics
h
—— I
Package outline
Static Characteristic
Features
-1.5
FE
500
C
process design, excellent power dissipation offers
• Batch
COMMON
COLLECTOR-EMITTER VOLTAGE
VCE
Mechanical data
VCE=-2V
Ta=100℃
SOD-123H
hFE
400
Ta=25℃
DC CURRENT GAIN
COLLECTOR CURRENT
IC
(A)
EMITTER
better
reverse leakage current and thermal resistance.
-4mA
Ta=25℃
-1.2
profile surface mounted application in order to
• Low
-3.6mA
optimize board space.
-3.2mA
• Low power loss, high efficiency.
-0.9
-2.8mA
• High current capability, low forward voltage drop.
-2.4mA
• High surge capability.
-2mA
-0.6
for overvoltage protection.
• Guardring
-1.6mA
• Ultra high-speed switching.
-1.2mA
• Silicon epitaxial planar chip, metal silicon junction.
-0.3
-0.8mA
of
• Lead-free parts meet environmental standards
IB=-0.4mA
MIL-STD-19500 /228
product for packing code suffix "G"
• RoHS
-0.0
-0
-1
-2
-3
Halogen
free product
for packing code
suffix "H"
0.071(1.8)
0.056(1.4)
100
0
-1E-3
Ta=100℃
-0.1
-1
COLLECTOR CURRENT
VBEsat
-1.6
——
IC
0.040(1.0)
0.024(0.6)
IC
0.031(0.8) Typ.
0.031(0.8) Typ.
-1.2
Dimensions in inches and (millimeters)
Ta=25℃
-0.8
Ta=100℃
-0.4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
-0.2
Ratings at 25℃ ambient temperature unless otherwise specified.
Ta=25℃
Single phase half wave, 60Hz, resistive of inductive load.
-0.0
For capacitive
-5
-1E-3 load, derate
-0.01current by 20%
-0.1
-1
COLLECTOR CURRENT
RATINGS
IC
(A)
-0.0
-1E-3
-0.01
-0.1
-1
IC —— VBE
-5
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
301000
14
40
15
16
Cob/ Cib ——
50
60
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
VDC
20
30
40
50
60Cib
80
Ta=100℃
Ta=25℃
-0.1 Surge Current 8.3 ms single half sine-wave
Peak Forward
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
-0.01
Storage Temperature Range
-1E-3
-0.2
CHARACTERISTICS
-0.8
BASE-EMMITER VOLTAGE
Maximum Forward Voltage at 1.0A DC
-1.0
VBE
(V)
100
105
140
150
200
40
120
-55 to +150
- 65 to +175
-1.2
VF
10
-0.1
0.50
-1
-10
REVERSE VOLTAGE
0.70
V
(V)
-20
0.85
0.9
0.92
0.5
IR
@T A=125℃
Rated DC Blocking Voltage
Ta=25℃
120
200
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Pc at ——
Ta
Maximum Average Reverse Current
@T A=25℃
1.0
f=1MHz
=0/ IC=0
IE70
115
150
30
100
-55 to +125
VCE=-2V
-0.6
10
100
80
C ob
TSTG
-0.4
VCB/18
VEB
1.0
(pF)
IO
IFSM
C
(A)
COLLCETOR CURRENT
IC
Maximum Average Forward Rectified Current
CAPACITANCE
-1
Maximum DC Blocking Voltage
-5
COLLECTOR
CURRENT
IC (A) FM1100-MH FM1150-MH
FM160-MH
FM180-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
FM1200-MH
Marking Code
-3
(A)
β=40
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
• Polarity : Indicated by cathode band
Position : Any
• Mounting
-0.4
• Weight : Approximated 0.011 gram
-0.01
(V)
Method 2026
0.012(0.3) Typ.
200
VCEsat ——
IC
: UL94-V0 rated
flame retardant
• Epoxy
-0.8
: Molded plastic, SOD-123H
• Caseβ=40
,
• Terminals :Plated terminals, solderable per MIL-STD-750
-0.6
0.146(3.7)
0.130(3.3)
300
10
COLLECTOR POWER DISSIPATION
Pc (W)
NOTES:
0.8
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance
From Junction to Ambient
0.6
0.4
0.2
2012-06
0.0
0
25
50
75
AMBIENT TEMPERATURE
2012-0
100
Ta
125
150
WILLAS ELECTRONIC CORP
(℃)
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1386 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate
Transistors
1.0A SURFACE
MOUNT SCHOTTKY BARRIER
RECTIFIERS -20V- 200V
Pb Free Product
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-89
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
.181(4.60)
Mechanical data
0.040(1.0)
0.024(0.6)
.173(4.39)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
.061REF
Method 2026
.063(1.60)
0.031(0.8) Typ.
0.031(0.8) Typ.
.055(1.40)
(1.55)REF
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.167(4.25)
Marking Code
12
20
VRRM
.023(0.58)
.154(3.91)
Maximum Recurrent Peak Reverse Voltage
14
VRMS
.016(0.40)
Maximum RMS Voltage
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
.047(1.2)
Peak Forward
Surge Current 8.3 ms single half sine-wave
superimposed
on rated load (JEDEC method)
.031(0.8)
CJ
Typical Junction Capacitance (Note 1)
Storage Temperature Range
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
20
13
30
40
50
16
60
18
80
10
100
115
150
120
200
Vo
21
28
35
42
56
70
105
140
Vo
30
40
50
60
80
100
150
200
Vo
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
Operating Temperature Range
.102(2.60)
.091(2.30)
14
15
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
TJ
TSTG
1.0
30
40
120
-55 to +125
Am
Am
℃
P
-55 to +150
℃
- 65 to +175
.197(0.52)
.013(0.32)
℃
.017(0.44)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
.014(0.35)
.118TYP
VF
Maximum Average Reverse Current at
(3.0)TYP
@T A=25℃
Rated DC Blocking Voltage
@T A=125℃
0.50
0.70
0.85
0.9
0.92
0.5
IR
10
UN
Vo
mA
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-0
Rev.C CORP.
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SB1386THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
Pb Free Product
Package outline
SOD-123H
0.146(3.7)
Information:
Low power loss,
high efficiency.
•Ordering
0.130(3.3)
• High current capability, low forward voltage drop.
Device PN Packing • High surge capability.
(3)
(1) (2)
2SB1386 x
–SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel for overvoltage
protection.
• Guardring
Ultra high-speed switching.
•Note: (1)
CASE:SOT‐89 • Silicon epitaxial planar chip, metal silicon junction.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” parts meet environmental standards of
• Lead-free
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
(3)
CLASSIFICATION OF h
FE RANK product
for packing code suffix
"G"
• RoHS
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer***
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Ratings at 25℃ ambient
temperature unless otherwise specified.
WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive
load, derate current by 20%
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
RATINGS
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Marking Code
12
13
14
15
16
18
10
115
120
for any errors or inaccuracies. Data sheet specifications and its information 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
Volts
VRRM
Volts
contained are intended to provide a product description only. "Typical" parameters 14
21
28
35
42
56
70
105
140
Maximum RMS
Voltage
VRMS
Volts
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
which may be included on WILLAS data sheets and/ or specifications can Amp
Maximum Average Forward Rectified Current
IO
1.0
and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Amp
WILLAS does not assume any liability arising out of the application or superimposed on rated load (JEDEC method)
℃/W
40
use of any product or circuit. Typical Thermal
Resistance (Note 2)
RΘJA
PF
120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55
to
+150
Operating Temperature Range
TJ
℃
- 65 to +175
WILLAS products are not designed, intended or authorized for use in medical, Storage Temperature
Range
TSTG
℃
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Volts
0.9
Maximum Forward
Voltage
at
1.0A
DC
0.92
VF
0.50
0.70
0.85
applications where a failure or malfunction of component or circuitry may directly 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mAmp
or indirectly cause injury or threaten a life without expressed written approval 10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at
1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-06
2012-0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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