WILLAS FM120-M+ 2SB1386 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process TRANSISTOR (PNP) design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to FEATURES optimize board space. power saturation loss, high efficiency. z Low• Low collector voltage • High current capability, low forward voltage drop. z Execllent current-to-gain characteristics • High surge capability. z Pb-Free package is available for overvoltage protection. • Guardring high-speed switching. • Ultra RoHS product for packing code suffix ”G” • Silicon epitaxial planar chip, metal silicon junction. Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free SOT-89 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 1. BASE 0.071(1.8) 0.056(1.4) 2. COLLECTOR 3. EMITTER Moisture Sensitivity Level 1 MIL-STD-19500 /228 z SOD-123H • RoHS product for packing code suffix "G" =25℃ unless otherwise noted) MAXIMUM RATINGS (Tafor Halogen free product packing code suffix "H" data SymbolMechanical Parameter VCBO VCEO VEBO IC ICP* PC Value Unit • Epoxy : UL94-V0 rated flame retardant -30 Collector-Base Voltage • Case : Molded plastic, SOD-123H , Collector-Emitter Voltage -20 • Terminals :Plated terminals, solderable per MIL-STD-750 Emitter-Base Voltage Method 2026 • Polarity : Indicated by cathode Continuous Collector Currentband Position :Current Any • Mounting Pulsed Collector • Weight : Approximated 0.011 gram Collector Power Dissipation 0.040(1.0) 0.024(0.6) V 0.031(0.8) Typ. V -6 V -5 A -10 A 0.5 W 0.031(0.8) Typ. Dimensions in inches and (millimeters) Junction Temperature 150 ℃ MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS TJ ℃ Ratings atStorage 25℃ ambient temperature unless otherwise-55~150 specified. Temperature Tstg Single phase half wave, 60Hz, resistive of inductive load. *Single pulse,PW=10ms For capacitive load, derate current by 20% ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH RATINGS Marking Code Maximum Recurrent Peak Reverse Voltage Parameter Maximum RMS Voltage Symbol VRRM VRMS 15 50 16 60 14 21 28 35 42 20 30 40 50 60 Collector-base breakdown voltage Maximum DC Blocking Voltage V(BR)CBO IC=-50μA,IE=0 Maximum Average Forward Rectifiedvoltage Current Collector-emitter breakdown IO V(BR)CEO IC=-1mA,IB=0 VDC Peak Forward Surge Current 8.3 ms single half sine-wave IFSM V(BR)EBO Emitter-base breakdown voltage superimposed on rated load (JEDEC method) RΘJA ICBO Typical Thermal Resistance (Note 2) Collector cut-off current CJ Typical Junction Capacitance (Note 1) TJ IEBO Operatingcut-off Temperature Range Emitter current Storage Temperature Range hFE CHARACTERISTICS Collector-emitter saturation Maximum Forward Voltage at 1.0A voltage DC Maximum Average Reverse Current at @T A=25℃ Transition frequency Rated DC Blocking Voltage IE=-50μA,IC=0 @T A=125℃ Collector output capacitance NOTES: 10 115 120 56 70 105 140 Vo -30 80 100 150 200 Vo 40 120 VCB=-20V,IE=0 VEB 18 Min 80 Typ 100 Max 150 Unit 200 1.0-20 30-6 -55 =0 to +125 =-5V,I C - 65 to +175 TSTG DC current gain 12 13 14 20 30 40 Test conditions VCE=-2V,IC=-500mA V Vo Am V Am V -0.5 μA -55 to +150 -0.5 μA ℃ P ℃ ℃ 82 390 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VCE(sat) VF fTIR Cob IC=-4A,IB=-100mA 0.50 VCE=-6V,IC=-50mA,f=30MHz VCB=-20V,IE=0,f=1MHz 0.70 0.85 0.5 10 -1 0.9 V 0.92 Vo 120 MHz 60 pF mA 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient CLASSIFICATION OF hFE Rank Range Marking 2012-06 2012-0 P Q R 82-180 120-270 180-390 BHP BHQ BHR WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1386 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Typical Characterisitics h —— I Package outline Static Characteristic Features -1.5 FE 500 C process design, excellent power dissipation offers • Batch COMMON COLLECTOR-EMITTER VOLTAGE VCE Mechanical data VCE=-2V Ta=100℃ SOD-123H hFE 400 Ta=25℃ DC CURRENT GAIN COLLECTOR CURRENT IC (A) EMITTER better reverse leakage current and thermal resistance. -4mA Ta=25℃ -1.2 profile surface mounted application in order to • Low -3.6mA optimize board space. -3.2mA • Low power loss, high efficiency. -0.9 -2.8mA • High current capability, low forward voltage drop. -2.4mA • High surge capability. -2mA -0.6 for overvoltage protection. • Guardring -1.6mA • Ultra high-speed switching. -1.2mA • Silicon epitaxial planar chip, metal silicon junction. -0.3 -0.8mA of • Lead-free parts meet environmental standards IB=-0.4mA MIL-STD-19500 /228 product for packing code suffix "G" • RoHS -0.0 -0 -1 -2 -3 Halogen free product for packing code suffix "H" 0.071(1.8) 0.056(1.4) 100 0 -1E-3 Ta=100℃ -0.1 -1 COLLECTOR CURRENT VBEsat -1.6 —— IC 0.040(1.0) 0.024(0.6) IC 0.031(0.8) Typ. 0.031(0.8) Typ. -1.2 Dimensions in inches and (millimeters) Ta=25℃ -0.8 Ta=100℃ -0.4 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS -0.2 Ratings at 25℃ ambient temperature unless otherwise specified. Ta=25℃ Single phase half wave, 60Hz, resistive of inductive load. -0.0 For capacitive -5 -1E-3 load, derate -0.01current by 20% -0.1 -1 COLLECTOR CURRENT RATINGS IC (A) -0.0 -1E-3 -0.01 -0.1 -1 IC —— VBE -5 Maximum Recurrent Peak Reverse Voltage VRRM 12 20 13 301000 14 40 15 16 Cob/ Cib —— 50 60 Maximum RMS Voltage VRMS 14 21 28 35 42 56 VDC 20 30 40 50 60Cib 80 Ta=100℃ Ta=25℃ -0.1 Surge Current 8.3 ms single half sine-wave Peak Forward superimposed on rated load (JEDEC method) RΘJA Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) CJ Operating Temperature Range TJ -0.01 Storage Temperature Range -1E-3 -0.2 CHARACTERISTICS -0.8 BASE-EMMITER VOLTAGE Maximum Forward Voltage at 1.0A DC -1.0 VBE (V) 100 105 140 150 200 40 120 -55 to +150 - 65 to +175 -1.2 VF 10 -0.1 0.50 -1 -10 REVERSE VOLTAGE 0.70 V (V) -20 0.85 0.9 0.92 0.5 IR @T A=125℃ Rated DC Blocking Voltage Ta=25℃ 120 200 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH Pc at —— Ta Maximum Average Reverse Current @T A=25℃ 1.0 f=1MHz =0/ IC=0 IE70 115 150 30 100 -55 to +125 VCE=-2V -0.6 10 100 80 C ob TSTG -0.4 VCB/18 VEB 1.0 (pF) IO IFSM C (A) COLLCETOR CURRENT IC Maximum Average Forward Rectified Current CAPACITANCE -1 Maximum DC Blocking Voltage -5 COLLECTOR CURRENT IC (A) FM1100-MH FM1150-MH FM160-MH FM180-MH SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM1200-MH Marking Code -3 (A) β=40 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) • Polarity : Indicated by cathode band Position : Any • Mounting -0.4 • Weight : Approximated 0.011 gram -0.01 (V) Method 2026 0.012(0.3) Typ. 200 VCEsat —— IC : UL94-V0 rated flame retardant • Epoxy -0.8 : Molded plastic, SOD-123H • Caseβ=40 , • Terminals :Plated terminals, solderable per MIL-STD-750 -0.6 0.146(3.7) 0.130(3.3) 300 10 COLLECTOR POWER DISSIPATION Pc (W) NOTES: 0.8 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.6 0.4 0.2 2012-06 0.0 0 25 50 75 AMBIENT TEMPERATURE 2012-0 100 Ta 125 150 WILLAS ELECTRONIC CORP (℃) WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1386 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers Outline Drawing SOT-89 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" .181(4.60) Mechanical data 0.040(1.0) 0.024(0.6) .173(4.39) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .061REF Method 2026 .063(1.60) 0.031(0.8) Typ. 0.031(0.8) Typ. .055(1.40) (1.55)REF • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS .167(4.25) Marking Code 12 20 VRRM .023(0.58) .154(3.91) Maximum Recurrent Peak Reverse Voltage 14 VRMS .016(0.40) Maximum RMS Voltage Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current .047(1.2) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) .031(0.8) CJ Typical Junction Capacitance (Note 1) Storage Temperature Range .060TYP (1.50)TYP CHARACTERISTICS Maximum Forward Voltage at 1.0A DC 20 13 30 40 50 16 60 18 80 10 100 115 150 120 200 Vo 21 28 35 42 56 70 105 140 Vo 30 40 50 60 80 100 150 200 Vo IO IFSM RΘJA Typical Thermal Resistance (Note 2) Operating Temperature Range .102(2.60) .091(2.30) 14 15 SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U TJ TSTG 1.0 30 40 120 -55 to +125 Am Am ℃ P -55 to +150 ℃ - 65 to +175 .197(0.52) .013(0.32) ℃ .017(0.44) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH .014(0.35) .118TYP VF Maximum Average Reverse Current at (3.0)TYP @T A=25℃ Rated DC Blocking Voltage @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 UN Vo mA NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Dimensions in inches and (millimeters) 2012-06 2012-0 Rev.C CORP. WILLAS ELECTRONIC WILLAS ELECTRONIC CORP. WILLAS FM120-M+ 2SB1386THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. Pb Free Product Package outline SOD-123H 0.146(3.7) Information: Low power loss, high efficiency. •Ordering 0.130(3.3) • High current capability, low forward voltage drop. Device PN Packing • High surge capability. (3) (1) (2) 2SB1386 x –SOT89 G ‐WS Tape& Reel: 1 Kpcs/Reel for overvoltage protection. • Guardring Ultra high-speed switching. •Note: (1) CASE:SOT‐89 • Silicon epitaxial planar chip, metal silicon junction. (2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” parts meet environmental standards of • Lead-free 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) MIL-STD-19500 /228 (3) CLASSIFICATION OF h FE RANK product for packing code suffix "G" • RoHS Halogen free product for packing code suffix "H" Mechanical data • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. 0.031(0.8) Typ. Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) ***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load. specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20% SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT RATINGS changes. WILLAS or anyone on its behalf assumes no responsibility or liability Marking Code 12 13 14 15 16 18 10 115 120 for any errors or inaccuracies. Data sheet specifications and its information 20 30 40 50 60 80 100 150 200 Maximum Recurrent Peak Reverse Voltage Volts VRRM Volts contained are intended to provide a product description only. "Typical" parameters 14 21 28 35 42 56 70 105 140 Maximum RMS Voltage VRMS Volts Maximum DC Blocking Voltage 20 30 40 50 60 80 100 150 200 VDC which may be included on WILLAS data sheets and/ or specifications can Amp Maximum Average Forward Rectified Current IO 1.0 and do vary in different applications and actual performance may vary over time. Peak Forward Surge Current 8.3 ms single half sine-wave 30 IFSM Amp WILLAS does not assume any liability arising out of the application or superimposed on rated load (JEDEC method) ℃/W 40 use of any product or circuit. Typical Thermal Resistance (Note 2) RΘJA PF 120 Typical Junction Capacitance (Note 1) CJ -55 to +125 -55 to +150 Operating Temperature Range TJ ℃ - 65 to +175 WILLAS products are not designed, intended or authorized for use in medical, Storage Temperature Range TSTG ℃ life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT Volts 0.9 Maximum Forward Voltage at 1.0A DC 0.92 VF 0.50 0.70 0.85 applications where a failure or malfunction of component or circuitry may directly 0.5 Maximum Average Reverse Current at @T A=25℃ IR mAmp or indirectly cause injury or threaten a life without expressed written approval 10 @T A=125℃ Rated DC Blocking Voltage of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient Inc and its subsidiaries harmless against all claims, damages and expenditures. 2012-06 2012-0 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.