Transistor 2SC4787 Silicon NPN epitaxial planer type For intermediate frequency amplification Unit: mm 0.15 0.65 max. 14.5±0.5 ● High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. Allowing supply with the radial taping. 1.0 ● 0.85 ● 0.8 ■ Features 1.05 2.5±0.1 (1.45) ±0.05 0.8 4.0 3.5±0.1 6.9±0.1 0.7 +0.1 2.5±0.5 2.5±0.5 (Ta=25˚C) +0.1 ■ Absolute Maximum Ratings 0.45–0.05 0.45–0.05 Symbol Ratings Unit Collector to base voltage VCBO 45 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4 V Collector current IC 50 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 2 3 2.5±0.1 1 Parameter Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT1 Type Package 1.2±0.1 0.65 max. 0.45+–0.1 0.05 (HW type) ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ VCB = 20V, IE = 0 max Unit 0.1 µA Collector cutoff current ICBO Collector to base voltage VCBO IC = 100µA, IE = 0 45 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 35 V Emitter to base voltage VEBO IE = 100µA, IC = 0 4 Forward current transfer ratio hFE VCE = 10V, IC = 10mA 20 Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 2mA 0.5 V Common emitter reverse transfer capacitance Cre VCB = 10V, IE = –1mA, f = 10.7MHz 1.5 pF Power gain PG VCB = 10V, IE = –10mA, f = 58MHz 18 Transition frequency fT VCB = 10V, IE = –10mA, f = 100MHz 300 V 50 100 dB 500 MHz 1 2SC4787 Transistor IC — VCE 80 700 70 500 400 300 200 100 IB=2.0mA 1.8mA 60 1.6mA 50 1.4mA 1.2mA 40 1.0mA 30 0.8mA 0.6mA 20 0.4mA 10 40 60 80 100 120 140 160 2 4 10 3 1 Ta=75˚C 25˚C 0.1 –25˚C 0.03 3 10 30 0.5 0 10 30 100 Collector to base voltage VCB (V) Ta=75˚C 60 25˚C –25˚C 40 20 0.3 1 3 10 30 1.6 2.0 300 200 100 0 – 0.1 – 0.3 100 2.4 –3 –10 –30 –100 PG — IE 30 IC=1mA f=10.7MHz Ta=25˚C 2.0 –1 Emitter current IE (mA) 1.6 1.2 0.8 0.4 VCB=10V f=58MHz Ta=25˚C 25 Power gain PG (dB) Common emitter reverse transfer capacitance Cre (pF) 1.0 1.2 400 Cre — VCE 1.5 0.8 500 Collector current IC (mA) 2.0 3 0.4 Base to emitter voltage VBE (V) VCB=10V Ta=25˚C 80 0 0.1 100 IE=0 f=1MHz Ta=25˚C 1 0 fT — I E 100 Cob — VCB 2.5 10 600 Collector current IC (mA) 3.0 8 VCE=10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 30 1 6 120 IC/IB=10 0.3 20 hFE — IC 100 0.01 0.1 30 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 40 0 0 Ambient temperature Ta (˚C) –25˚C 10 Transition frequency fT (MHz) 20 Ta=75˚C 0.2mA 0 0 Collector output capacitance Cob (pF) VCE=10V 50 Collector current IC (mA) 600 0 2 IC — VBE 60 25˚C Collector current IC (mA) Collector power dissipation PC (mW) PC — Ta 800 20 15 10 5 0 1 3 10 30 100 Collector to emitter voltage VCE (V) 0 – 0.1 – 0.3 –1 –3 –10 –30 Emitter current IE (mA) –100