IRFF330 Data Sheet March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V Formerly developmental type TA17414. Ordering Information IRFF330 PACKAGE TO-205AF 1893.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. PART NUMBER File Number • rDS(ON) = 1.000Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D BRAND IRFF330 NOTE: When ordering, include the entire part number. G S Packaging JEDEC TO-205AF SOURCE DRAIN (CASE) GATE 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFF330 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRFF330 400 400 3.5 14 ±20 25 0.2 300 -55 to 150 UNITS V V A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications MIN TYP MAX UNITS Drain to Source Breakdown Voltage PARAMETER SYMBOL BVDSS VGS = 0V, ID = 250µA (Figure 10) 400 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS , ID = 250µA 2.0 - 4.0 V - - 25 µA Zero-Gate Voltage Drain Current On-State Drain Current (Note 2) IDSS ID(ON) Gate to Source Leakage Forward Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time IGSS rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time TEST CONDITIONS VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS , VGS = 0V, TJ = 125oC - - 250 µA VDS > ID(ON) x rDS(ON)MAX , VGS = 10V (Figure 7) 3.5 - - A VGS = ±20V - - ±100 nA VGS = 10V, ID = 2.0A (Figures 8, 9) - 0.8 1.000 Ω VDS = 10V, ID = 3.3A (Figure 12) 2.9 3.5 - S ID ≈ 3.5A, RG = 9.1Ω, VGS = 10V, RL = 49Ω VDD = 175V (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature - - 30 ns - - 35 ns - - 55 ns - - 35 ns VGS = 10V, ID = 3.5A, IG(REF) = 1.5mA, VDS = 0.8V x Rated BVDSS (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature - 18 30 nC - 11 - nC - 7.0 - nC VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 700 - pF tf Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS - 150 - pF Reverse Transfer Capacitance CRSS - 40 - pF - 5.0 - nH - 15 - nH - - 5.0 oC/W - - 175 oC/W Internal Drain Inductance LD Internal Source Inductance LS Measured from the Drain Modified MOSFET Lead, 5mm (0.2in) from Symbol Showing the header to Center of Die Internal Device Inductances Measured from the D Source Lead, 5mm (0.2in) from Header to Source Bonding Pad LD G LS S Junction to Case RθJC Junction to Ambient RθJA 2 Free Air Operation IRFF330 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 3) ISDM TEST CONDITIONS MIN TYP MAX UNITS - - 3.5 A - - 14 A TJ = 25oC, ISD = 3.5A, VGS = 0V (Figure 13) - - 1.6 V TJ = 150oC, ISD = 3.5A, dISD/dt = 100A/µs TJ = 150oC, ISD = 3.5A, dISD/dt = 100A/µs - 600 - ns - 4.0 - µC Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier. D G S Source to Drain Diode Voltage (Note 2) VSD Reverse Recovery Time trr Reverse Recovered Charge QRR NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive Rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, start TJ = 25oC, L = 42.85mH, RG = 25Ω, peak IAS = 3.5A (Figures 14,15). Typical Performance Curves Unless Otherwise Specified 4 ID , DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 3 2 1 0.2 0 0 0 50 100 150 25 50 TC , CASE TEMPERATURE (oC) 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1.0 ZθJC, NORMALIZED THERMAL IMPEDANCE POWER DISSIPATION MULTIPLIER 1.2 0.5 0.2 PDM 0.1 0.1 t1 0.05 0.02 NOTES: DUTY FACTOR: D = t1/t2 TJ = PDM x ZθJC(t) x RθJC + TC 0.01 SINGLE PULSE 0.01 10-5 10-4 0.1 10-2 10-3 T1, RECTANGULAR PULSE DURATION (LC) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 3 t2 1 10 IRFF330 Typical Performance Curves Unless Otherwise Specified (Continued) 8 VGS = 10V 10µs 100µs 1ms 1.0 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 10ms 100ms 0.1 DC TC = 25oC TJ = MAX RATED 6 5 4 3 VGS = 4.5V 2 VGS = 4V 0 10 103 102 VDS , DRAIN TO SOURCE VOLTAGE (V) 1 VGS = 5V 1 SINGLE PULSE 0.01 0 VGS = 6V ID , DRAIN CURRENT (A) VGS = 10V VGS = 5V 4 80µs PULSE TEST 3 VGS = 4.5V 2 1 VGS = 4V 0 0 2 4 6 8 VDS , DRAIN TO SOURCE VOLTAGE (V) 5 3 TJ = 25oC TJ = -55oC 2 1 0 NORMALIZED ON RESISTANCE ON RESISTANCE (Ω) 2 3 4 5 6 VGS = 20V 1 0 30 ID = 2A VGS = 10V 1.8 1.4 1.0 0.6 0.2 -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2µs pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 4 7 FIGURE 7. TRANSFER CHARACTERISTICS VGS = 10V 25 1 VGS , GATE TO SOURCE VOLTAGE (V) 2.2 10 20 15 ID , DRAIN CURRENT (A) 300 TJ = 125oC 0 10 2µs PULSE TEST 5 250 4 3 0 200 VDS > ID(ON) x rDS(ON)MAX 80µs PULSE TEST FIGURE 6. SATURATION CHARACTERISTICS 2 150 100 FIGURE 5. OUTPUT CHARACTERISTICS ID(ON) , DRAIN TO SOURCE CURRENT (A) 5 50 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA rDS(ON) , DRAIN TO SOURCE 80µs PULSE TEST VGS = 5.5V 7 ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 10 FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 160 IRFF330 Typical Performance Curves Unless Otherwise Specified (Continued) 2000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGS ID = 250µA 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.25 1.05 0.95 0.85 1600 1200 CISS 800 400 COSS CRSS 0.75 -40 0 40 80 0 160 120 0 10 20 30 40 VDS , DRAIN TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE ISD , SOURCE TO DRAIN CURRENT (A) 10 8 TJ = -55oC TJ = 25oC 4 TJ = 125oC 2 0 0 2 6 4 8 100 TJ = 25oC TJ = 150oC 10 TJ = 150oC TJ = 25oC 1 10 0 1 2 3 VSD , SOURCE TO DRAIN VOLTAGE (V) ID , DRAIN CURRENT (A) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS , GATE TO SOURCE VOLTAGE (V) gfs , TRANSCONDUCTANCE (S) 80µs PULSE TEST 6 ID = 3.5A 15 VDS = 80V VDS = 200V VDS = 320V 10 5 0 0 8 16 24 32 40 Qg(TOT) , TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5 50 4 IRFF330 Test Circuits and Waveforms VDS BVDSS tP VDS L IAS VARY tP TO OBTAIN VDD + RG REQUIRED PEAK IAS - VGS VDD DUT tP 0V 0 IAS tAV 0.01Ω FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 17. SWITCHING TIME TEST CIRCUIT 0.2µF 50% PULSE WIDTH 10% FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 IG(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 19. GATE CHARGE TEST CIRCUIT 6 IG(REF) 0 FIGURE 20. GATE CHARGE WAVEFORMS IRFF330 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. 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