BB 639 Silicon Variable Capacitance Diode ● For tuning of extended frequency bands in VHF TV/VTR tuners Type Ordering Code (tape and reel) Pin Configuration 1 2 Marking Package BB 639 Q62702-B586 C yellow S SOD-323 A Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 30 V Reverse voltage (R ≥ 5 kΩ) VRM 35 V Forward current IF 20 mA Operating temperature range Top – 55 … + 150 °C Storage temperature range Tstg – 55 … + 150 °C RthJA ≤ 450 K/W Thermal Resistance Junction-ambient Semiconductor Group 1 10.94 BB 639 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Value min. typ. Unit max. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C IR Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Capacitance ratio VR = 1 V, 28 V, f = 1 MHz CT1/CT28 Capacitance matching VR = 1 V … 28 V, f = 1 MHz ∆CT/CT Series resistance CT = 12 pF, f = 100 MHz rS Series inductance LS Semiconductor Group nA – – – – 10 200 pF 36 2.4 38.3 2.6 42 2.9 – 13.5 14.7 – % – – 2.5 Ω 2 – 0.65 – – 2 – nH BB 639 Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3