INFINEON BC858BF

BC857BF...BC860BF
PNP Silicon AF Transistor
• For AF input stages and driver applications
2
3
• High current gain
• Low collector-emitter saturation voltage
1
• Low noise between 30 Hz and 15 kHz
• Complementary types: BC847BF, BC848BF
BC849BF, BC850BF (NPN)
Type
Marking
Pin Configuration
Package
BC857BF
3Fs
1=B
2=E
3=C
TSFP-3
BC858BF
3Ks
1=B
2=E
3=C
TSFP-3
BC859BF
4Bs
1=B
2=E
3=C
TSFP-3
BC860BF
4Fs
1=B
2=E
3=C
TSFP-3
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
Value
V
BC857BF, BC860BF
45
BC858BF, BC859BF
30
Collector-emitter voltage
Unit
VCES
BC857BF, BC860BF
50
BC858BF, BC859BF
30
Collector-base voltage
VCBO
BC857BF, BC860BF
50
BC858BF, BC859BF
30
Emitter-base voltage
VEBO
BC857BF, BC860BF
5
BC858BF, BC859BF
5
Collector current
IC
100
Peak collector current
ICM
200
Peak base current
IBM
200
Peak emitter current
IEM
200
mA
Total power dissipation, TS ≤ 128°C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
1
mA
-65 ... 150
Jun-16-2004
BC857BF...BC860BF
Thermal Resistance
Parameter
Junction - soldering point 1)
Symbol
RthJS
Value
≤ 90
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
V
IC = 10 mA, IB = 0 mA, BC857BF, BC860BF
45
-
-
IC = 10 mA, IB = 0 mA, BC858BF, BC859BF
30
-
-
IC = 10 µA, IE = 0 mA, BC857BF, BC860BF
50
-
-
IC = 10 µA, IE = 0 mA, BC858BF, BC859BF
30
-
-
IC = 10 µA, VBE = 0 V, BC857BF, BC860BF
50
-
-
IC = 10 µA, VBE = 0 V, BC858BF, BC859BF
30
-
-
5
-
-
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CES
Emitter-base breakdown voltage
V(BR)EBO
IE = 1 µA, IC = 0 µA
Collector-base cutoff current
µA
I CBO
VCB = 30 V, IE = 0 A
-
-
0.015
VCB = 30 V, IE = 0 A, TA = 150 °C
-
-
5
DC current gain2)
-
h FE
IC = 10 µA, VCE = 5 V
-
250
-
IC = 2 mA, VCE = 5 V
220
290
475
Collector-emitter saturation voltage2)
mV
VCEsat
IC = 10 mA, IB = 0.5 mA
-
75
300
IC = 100 mA, IB = 5 mA
-
250
650
IC = 10 mA, IB = 0.5 mA
-
700
-
IC = 100 mA, IB = 5 mA
-
850
-
IC = 2 mA, VCE = 5 V
600
650
750
IC = 10 mA, VCE = 5 V
-
-
820
Base emitter saturation voltage 2)
VBEsat
Base-emitter voltage2)
VBE(ON)
1For calculation of R
thJA please refer to Application Note Thermal Resistance
2Pulse test: t < 300µs; D < 2%
2
Jun-16-2004
BC857BF...BC860BF
AC Characteristics
Transition frequency
fT
-
250
-
MHz
Ccb
-
3
-
pF
Ceb
-
10
-
h11e
-
4.5
-
kΩ
h12e
-
2
-
10-4
h21e
-
330
-
-
h22e
-
30
-
µS
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit reverse voltage transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
Short-circuit forward current transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
Noise figure
dB
F
IC = 200 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ, BC859BF
-
1
4
-
1
4
-
-
0.11
IC = 200 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ, BC860BF
Equivalent noise voltage
Vn
µV
IC = 200 µA, V CE = 5 V, RS = 2 kΩ,
f = 10...50 Hz , BF860BF
3
Jun-16-2004
BC857BF...BC860BF
DC current gain hFE = ƒ(IC)
Collector-emitter saturation voltage
VCE = 5 V
IC = ƒ(VCEsat), hFE = 20
EHP00382
10 3
h FE
5
EHP00380
10 2
mA
ΙC
100 C
100 C
25 C
-50 C
25 C
-50 C
10 2
10 1
5
5
10 1
10
5
5
10 0
10 -2
5
10 -1
5 10
0
5 10
1
mA 10
ΙC
0
10 -1
2
0
0.1
0.2
0.4
0.3
V 0.5
VCEsat
Base-emitter saturation voltage
Collector cutoff current ICBO = ƒ(TA)
IC = ƒ(V BEsat), hFE = 20
VCB = 30 V
EHP00379
10 2
mA
ΙC
EHP00381
10 4
nA
Ι CB0
10
10 3
100 C
25 C
-50C
1
5
max
10 2
5
5
typ
10 1
5
10 0
5
10
0
5
10 -1
10 -1
0
0.2
0.4
0.6
0.8
V
1.2
V BEsat
0
50
100
C
150
TA
4
Jun-16-2004
BC857BF...BC860BF
Transition frequency fT = ƒ(IC)
VCE = 5 V
Collector-base capacitance CCB= ƒ (VCB0)
Emitter-base capacitance CEB= ƒ (VEB0)
EHP00378
10 3
C CB0
( C EB0 )
MHz
fT
5
12
pF
BC 856...860
EHP00376
10
8
10 2
C EBO
6
5
4
C CBO
2
10 1
10 -1
5 10 0
5
10 1
mA
0
10 -1
10 2
5
10 0
V
ΙC
VCB0
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(t p)
10 2
300
K/W
RthJS
mW
Ptot
10 1
(VEB0 )
200
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 1
150
10 0
100
50
0
0
20
40
60
80
100
120 °C
10 -1 -6
10
150
TS
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
5
Jun-16-2004
BC857BF...BC860BF
h parameter he = ƒ(IC) normalized
VCE = 5V
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
P totmax/P totDC
10 3
10 2
he
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
BC 856...860
EHP00383
5
VCE = 5 V
h 11e
10 1
5
h 12e
10 0
5
h 21e
h 22e
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
10 -1
0
10 -1
5
10 0
mA
tp
ΙC
h parameter he = ƒ(VCE ) normalized
Noise figure F = ƒ(VCE)
IC = 2mA
IC = 0.2mA, R S = 2kΩ , f = 1kHz
2.0
BC 856...860
he
EHP00384
20
dB
BC 856...860
EHP00385
F
Ι C = 2 mA
h 11
15
1.5
1.0
10
h12
h 22
0.5
0
10 1
0
10
20
V
5
0
10 -1
30
VCE
5
10 0
5
10 1
V
10 2
VCE
6
Jun-16-2004
BC857BF...BC860BF
Noise figure F = ƒ(f)
Noise figure F = ƒ(I C)
VCE = 5V, f = 120Hz
IC = 0.2mA, VCE = 5V, RS = 2 kΩ
20
BC 856...860
EHP00386
20
dB
BC 856...860
EHP00387
dB
F
F
15
15
R S = 1 MΩ
100 kΩ
10 k Ω
10
10
500 Ω
5
5
1 kΩ
0
10 -2
10 -1
10 0
10 1
0
10 -3
kHz 10 2
10 -2
10 -1
10 0
ΙC
f
Noise figure F = ƒ(IC )
Noise figure F = ƒ(I C)
VCE = 5V, f = 10kHz
VCE = 5V, f = 1kHz
20
mA 10 1
BC 856...860
EHP00388
20
dB
BC 856...860
EHP00389
dB
F
F
15
15
R S = 1 MΩ
100 k Ω
R S = 1 MΩ
100 k Ω
10 kΩ
10
10
500 Ω
10 kΩ
1 kΩ
5
5
500 Ω
0
10 -3
10 -2
10 -1
10 0
1 kΩ
0
10-3
mA 10 1
10 -2
10 -1
10 0
mA 10 1
ΙC
ΙC
7
Jun-16-2004
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2004.
All Rights Reserved.
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The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.Infineon.com).
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question please contact your nearest Infineon Technologies Office.
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approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
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and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.