BC857BF...BC860BF PNP Silicon AF Transistor • For AF input stages and driver applications 2 3 • High current gain • Low collector-emitter saturation voltage 1 • Low noise between 30 Hz and 15 kHz • Complementary types: BC847BF, BC848BF BC849BF, BC850BF (NPN) Type Marking Pin Configuration Package BC857BF 3Fs 1=B 2=E 3=C TSFP-3 BC858BF 3Ks 1=B 2=E 3=C TSFP-3 BC859BF 4Bs 1=B 2=E 3=C TSFP-3 BC860BF 4Fs 1=B 2=E 3=C TSFP-3 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BC857BF, BC860BF 45 BC858BF, BC859BF 30 Collector-emitter voltage Unit VCES BC857BF, BC860BF 50 BC858BF, BC859BF 30 Collector-base voltage VCBO BC857BF, BC860BF 50 BC858BF, BC859BF 30 Emitter-base voltage VEBO BC857BF, BC860BF 5 BC858BF, BC859BF 5 Collector current IC 100 Peak collector current ICM 200 Peak base current IBM 200 Peak emitter current IEM 200 mA Total power dissipation, TS ≤ 128°C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg 1 mA -65 ... 150 Jun-16-2004 BC857BF...BC860BF Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value ≤ 90 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 mA, BC857BF, BC860BF 45 - - IC = 10 mA, IB = 0 mA, BC858BF, BC859BF 30 - - IC = 10 µA, IE = 0 mA, BC857BF, BC860BF 50 - - IC = 10 µA, IE = 0 mA, BC858BF, BC859BF 30 - - IC = 10 µA, VBE = 0 V, BC857BF, BC860BF 50 - - IC = 10 µA, VBE = 0 V, BC858BF, BC859BF 30 - - 5 - - Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CES Emitter-base breakdown voltage V(BR)EBO IE = 1 µA, IC = 0 µA Collector-base cutoff current µA I CBO VCB = 30 V, IE = 0 A - - 0.015 VCB = 30 V, IE = 0 A, TA = 150 °C - - 5 DC current gain2) - h FE IC = 10 µA, VCE = 5 V - 250 - IC = 2 mA, VCE = 5 V 220 290 475 Collector-emitter saturation voltage2) mV VCEsat IC = 10 mA, IB = 0.5 mA - 75 300 IC = 100 mA, IB = 5 mA - 250 650 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 850 - IC = 2 mA, VCE = 5 V 600 650 750 IC = 10 mA, VCE = 5 V - - 820 Base emitter saturation voltage 2) VBEsat Base-emitter voltage2) VBE(ON) 1For calculation of R thJA please refer to Application Note Thermal Resistance 2Pulse test: t < 300µs; D < 2% 2 Jun-16-2004 BC857BF...BC860BF AC Characteristics Transition frequency fT - 250 - MHz Ccb - 3 - pF Ceb - 10 - h11e - 4.5 - kΩ h12e - 2 - 10-4 h21e - 330 - - h22e - 30 - µS IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure dB F IC = 200 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 2 kΩ, BC859BF - 1 4 - 1 4 - - 0.11 IC = 200 µA, VCE = 5 V, f = 1 kHz, ∆ f = 200 Hz, RS = 2 kΩ, BC860BF Equivalent noise voltage Vn µV IC = 200 µA, V CE = 5 V, RS = 2 kΩ, f = 10...50 Hz , BF860BF 3 Jun-16-2004 BC857BF...BC860BF DC current gain hFE = ƒ(IC) Collector-emitter saturation voltage VCE = 5 V IC = ƒ(VCEsat), hFE = 20 EHP00382 10 3 h FE 5 EHP00380 10 2 mA ΙC 100 C 100 C 25 C -50 C 25 C -50 C 10 2 10 1 5 5 10 1 10 5 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 ΙC 0 10 -1 2 0 0.1 0.2 0.4 0.3 V 0.5 VCEsat Base-emitter saturation voltage Collector cutoff current ICBO = ƒ(TA) IC = ƒ(V BEsat), hFE = 20 VCB = 30 V EHP00379 10 2 mA ΙC EHP00381 10 4 nA Ι CB0 10 10 3 100 C 25 C -50C 1 5 max 10 2 5 5 typ 10 1 5 10 0 5 10 0 5 10 -1 10 -1 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat 0 50 100 C 150 TA 4 Jun-16-2004 BC857BF...BC860BF Transition frequency fT = ƒ(IC) VCE = 5 V Collector-base capacitance CCB= ƒ (VCB0) Emitter-base capacitance CEB= ƒ (VEB0) EHP00378 10 3 C CB0 ( C EB0 ) MHz fT 5 12 pF BC 856...860 EHP00376 10 8 10 2 C EBO 6 5 4 C CBO 2 10 1 10 -1 5 10 0 5 10 1 mA 0 10 -1 10 2 5 10 0 V ΙC VCB0 Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(t p) 10 2 300 K/W RthJS mW Ptot 10 1 (VEB0 ) 200 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 150 10 0 100 50 0 0 20 40 60 80 100 120 °C 10 -1 -6 10 150 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Jun-16-2004 BC857BF...BC860BF h parameter he = ƒ(IC) normalized VCE = 5V Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) P totmax/P totDC 10 3 10 2 he 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 BC 856...860 EHP00383 5 VCE = 5 V h 11e 10 1 5 h 12e 10 0 5 h 21e h 22e 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 -1 0 10 -1 5 10 0 mA tp ΙC h parameter he = ƒ(VCE ) normalized Noise figure F = ƒ(VCE) IC = 2mA IC = 0.2mA, R S = 2kΩ , f = 1kHz 2.0 BC 856...860 he EHP00384 20 dB BC 856...860 EHP00385 F Ι C = 2 mA h 11 15 1.5 1.0 10 h12 h 22 0.5 0 10 1 0 10 20 V 5 0 10 -1 30 VCE 5 10 0 5 10 1 V 10 2 VCE 6 Jun-16-2004 BC857BF...BC860BF Noise figure F = ƒ(f) Noise figure F = ƒ(I C) VCE = 5V, f = 120Hz IC = 0.2mA, VCE = 5V, RS = 2 kΩ 20 BC 856...860 EHP00386 20 dB BC 856...860 EHP00387 dB F F 15 15 R S = 1 MΩ 100 kΩ 10 k Ω 10 10 500 Ω 5 5 1 kΩ 0 10 -2 10 -1 10 0 10 1 0 10 -3 kHz 10 2 10 -2 10 -1 10 0 ΙC f Noise figure F = ƒ(IC ) Noise figure F = ƒ(I C) VCE = 5V, f = 10kHz VCE = 5V, f = 1kHz 20 mA 10 1 BC 856...860 EHP00388 20 dB BC 856...860 EHP00389 dB F F 15 15 R S = 1 MΩ 100 k Ω R S = 1 MΩ 100 k Ω 10 kΩ 10 10 500 Ω 10 kΩ 1 kΩ 5 5 500 Ω 0 10 -3 10 -2 10 -1 10 0 1 kΩ 0 10-3 mA 10 1 10 -2 10 -1 10 0 mA 10 1 ΙC ΙC 7 Jun-16-2004 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München © Infineon Technologies AG 2004. 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