IPD640N06L G OptiMOS® Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS(on),max 64 mΩ ID 18 A • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Type IPD640N06L G Type Package PG-TO252-3 IPD640N06L G Marking 640N06L PG-TO252-3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 18 T C=100 °C 12 Unit A Pulsed drain current I D,pulse T C=25 °C1) 72 Avalanche energy, single pulse E AS I D=18 A, R GS=25 Ω 43 mJ Reverse diode dv /dt dv /dt I D=18 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 1) Rev. 1.2 ±20 V 47 W -55 ... 175 °C 55/175/56 See figure 3 page 1 2006-03-27 IPD640N06L G Parameter Values Symbol Conditions Unit min. typ. max. - - 3.2 minimal footprint - - 75 6 cm2 cooling area2) - - 50 60 - - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=16 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=60 V, V GS=0 V, T j=125 °C - 1 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=18 A - 47 64 mΩ V GS=4.5 V, I D=12 A - 64 85 - 1.2 - Ω 9.5 19 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=18 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.2 page 2 2006-03-27 IPD640N06L G Parameter Values Symbol Conditions Unit min. typ. max. - 350 470 - 94 130 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 35 53 Turn-on delay time t d(on) - 6 8 Rise time tr - 25 38 Turn-off delay time t d(off) - 32 48 Fall time tf - 32 48 Gate to source charge Q gs - 1.4 1.9 Gate charge at threshold Q g(th) - 0.5 0.7 Gate to drain charge Q gd - 3.6 5.4 Switching charge Q sw - 4.5 6.5 Gate charge total Qg - 10 13 Gate plateau voltage V plateau - 4.2 - Output charge Q oss - 3 4 - - 18 - - 72 - 0.99 1.3 V - 30 45 ns - 20 30 nC V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=15 A, R G=22 Ω pF ns Gate Charge Characteristics 3) V DD=30 V, I D=18 A, V GS=0 to 10 V V DD=30 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr T C=25 °C V GS=0 V, I F=18 A, T j=25 °C A V R=30 V, I F=I S, di F/dt =100 A/µs Reverse recovery charge 3) Rev. 1.2 Q rr See figure 16 for gate charge parameter definition page 3 2006-03-27 IPD640N06L G 1 Power dissipation 2 Drain current P tot=f(T C); V GS≥6 V I D=f(T C); V GS≥10 V 50 20 40 15 I D [A] P tot [W] 30 10 20 5 10 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 102 101 1 µs 10 µs limited by on-state resistance 100 µs 0.5 100 1 ms I D [A] DC Z thJC [K/W] 101 10 ms 0.2 0.1 0.05 0.02 100 10-1 0.01 single pulse 10-1 10 10-2 -1 10 0 10 1 10 2 V DS [V] Rev. 1.2 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2006-03-27 IPD640N06L G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 120 30 4V 3.5 V 5V 10 V 5.5 V 100 4.5 V 4.5 V 80 R DS(on) [mΩ] I D [A] 20 4V 5V 60 5.5 V 10 V 40 10 3.5 V 20 3V 0 0 0 1 2 0 3 10 V DS [V] 20 30 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 30 25 25 20 25 °C 20 g fs [S] I D [A] 15 175 °C 15 10 10 5 5 0 0 0 1 2 3 4 5 Rev. 1.2 0 5 10 15 20 I D [A] V GS [V] page 5 2006-03-27 IPD640N06L G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=18 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 160 2.5 140 2 120 80 V GS(th) [V] R DS(on) [mΩ] 160 µA 100 98 % 60 1.5 16 µA 1 typ 40 0.5 20 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 102 1000 25 °C 98% 175 °C 98% 25 °C Ciss 175 °C I F [A] C [pF] 10 Coss 100 1 100 Crss 10-1 10 0 5 10 15 20 25 30 Rev. 1.2 0 1 2 3 V SD [V] V DS [V] page 6 2006-03-27 IPD640N06L G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=18 A pulsed parameter: T j(start) parameter: V DD 100 12 30 V 10 12V 48 V 8 10 V GS [V] I AV [A] 25 °C 100 °C 6 4 150 °C 2 1 0 1 10 100 1000 0 2 4 6 8 10 12 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 75 V GS Qg V BR(DSS) [V] 70 65 V g s(th) 60 55 Q g(th) Q sw Q gs 50 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 1.2 page 7 2006-03-27 IPD640N06L G PG-TO252-3: Outline packaging: Rev. 1.2 page 8 2006-03-27 IPD640N06L G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.2 page 9 2006-03-27