PNP Silicon RF Transistor ● BF 569 For oscillators, mixers and self-oscillating mixer stages in UHF TV tuners Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BF 569 LHs Q62702-F869 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 35 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 3 Collector current IC 30 Base current IB 5 Total power dissipation, TA ≤ 25 ˚C Ptot 280 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 55 … + 150 Rth JA ≤ mA Thermal Resistance Junction - ambient2) 1) 2) 450 K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BF 569 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR) CE0 35 – – V Collector cutoff current VCB = 20 V, IE = 0 ICB0 – – 100 nA DC current gain IC = 3 mA, VCE = 10 V hFE 20 50 – – Transition frequency IC = 3 mA, VCE = 10 V, f = 100 MHz fT – 950 – MHz Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Ccb – 0.32 – pF Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Cce – 0.15 – Noise figure IC = 3 mA, VCB = 10 V, f = 800 MHz RS = 60 Ω F – 4.5 – Common base power gain IC = 3 mA, VCB = 10 V, f = 800 MHz RL = 500 Ω Gp – 14.8 – AC Characteristics Semiconductor Group 2 dB BF 569 Total power dissipation Ptot = f (TA) Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz Collector-base capacitance Ccb = f (VCB) f = 1 MHz Semiconductor Group 3