PNP Silicon AF Transistor ● ● ● ● ● BCP 69 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP 68 (NPN) Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) BCP 69 BCP 69-10 BCP 69-16 BCP 69-25 BCP 69 BCP 69-10 BCP 69-16 BCP 69-25 Q62702-C2130 Q62702-C2131 Q62702-C2132 Q62702-C2133 B SOT-223 C E C Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 VCES 20 25 V Collector-base voltage VCB0 25 Emitter-base voltage VEB0 5 Collector current IC 1 Peak collector current ICM 2 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 ˚C2) Ptot 1.5 W Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 72 Junction - soldering point Rth JS ≤ 17 A mA Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 01.97 BCP 69 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 V(BR)CE0 20 – – Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 V(BR)CES 25 – – Collector-base breakdown voltage IC = 10 µA, IB = 0 V(BR)CB0 25 – – Emitter-base breakdown voltage IE = 10 µA, IB = 0 V(BR)EB0 5 – – Collector-base cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C ICB0 – – – – 100 100 nA µA Emitter-base cutoff current VEB = 5 V, IC = 0 IEB0 – – 100 nA DC current gain1) IC = 5 mA, VCE = 10 V IC = 500 mA, VCE = 1 V hFE 50 85 85 100 160 60 – – 100 160 250 – – 375 160 250 375 – – – 0.5 – – 0.6 – – 1 – 100 – BCP 69 BCP 69-10 BCP 69-16 BCP 69-25 IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA VCEsat Base-emitter voltage1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V VBE V – V AC characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz 1) fT Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 MHz BCP 69 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V, f = 100 MHz Collector cutoff current ICB0 = f (TA) VCB = 25 V DC current gain hFE = f (IC) VCB = 1 V Semiconductor Group 3 BCP 69 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Permissible pulse load Ptot max/Ptot DC = f (tp) Semiconductor Group 4