PHILIPS PBYR1045D

Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
PBYR1045D series
SYMBOL
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
GENERAL DESCRIPTION
QUICK REFERENCE DATA
VR = 40 V/ 45 V
k
tab
a
3
IF(AV) = 10 A
VF ≤ 0.57 V
PINNING
Schottky rectifier diodes in a plastic
envelope. Intended for use as
output rectifiers in low voltage, high
frequency switched mode power
supplies.
PIN
The PBYR1045D series is supplied
in the surface mounting SOT428
package.
SOT428
DESCRIPTION
1
no connection
2
cathode1
3
anode
tab
2
tab
cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
PBYR10
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Operating junction
temperature
Storage temperature
MAX.
UNIT
-
40D
40
45D
45
V
-
40
45
V
Tmb ≤ 113 ˚C
-
40
45
V
square wave; δ = 0.5; Tmb ≤ 134 ˚C
-
10
A
square wave; δ = 0.5; Tmb ≤ 134 ˚C
-
20
A
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
100
110
A
A
-
1
A
-
150
˚C
- 65
175
˚C
1 It is not possible to make connection to pin 2 of the SOT428 package.
July 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1045D series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN.
pcb mounted, minimum footprint, FR4
board
TYP. MAX. UNIT
-
-
2
K/W
-
50
-
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
VF
Forward voltage
IR
Reverse current
Cd
Junction capacitance
July 1998
CONDITIONS
MIN.
IF = 10 A; Tj = 125˚C
IF = 20 A; Tj = 125˚C
IF = 20 A
VR = VRWM
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
2
-
TYP. MAX. UNIT
0.5
0.74
0.65
0.2
22
350
0.57
0.8
0.84
1.3
35
-
V
V
V
mA
mA
pF
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
10
PBYR1045D series
Forward dissipation, PF (W)
Tmb(max) (C)
PBYR1045D
130
0.5
8
125 C
134
10
0.2
100 C
0.1
6
138
75 C
1
142
4
tp
I
D=
50 C
tp
T
0.1
146
2
t
T
0
0
150
15
5
10
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
PBYR1045D Tmb(max) (C)
Vo = 0.34 V
Rs = 0.023 Ohms
8
4
6
2.8
2.2
Tj = 25 C
0.01
0
Fig.1. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
10
PBYR1045
Reverse current, IR (mA)
100
D = 1.0
Vo = 0.34 V
Rs = 0.023 Ohms
25
Reverse voltage, VR (V)
50
Fig.4. Typical reverse leakage current; IR = f(VR);
parameter Tj
PBYR1045
Cd / pF
130
1000
a = 1.57 134
1.9
138
100
4
142
2
146
0
0
2
10
150
10
4
6
8
Average forward current, IF(AV) (A)
1
Fig.2. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
50
100
Fig.5. Typical junction capacitance; Cd = f(VR);
f = 1 MHz; Tj = 25˚C to 125 ˚C.
PBYR1045
Forward current, IF (A)
10
VR / V
10
Transient thermal impedance, Zth j-mb (K/W)
Tj = 25 C
Tj = 125 C
40
1
30
typ
max
20
0.1
PD
10
0
tp
D=
T
0
0.2
0.4
0.6
0.8
1
Forward voltage, VF (V)
1.2
0.01
1.4
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
July 1998
1us
10us
100us
tp
T
t
1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYR1045
Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1045D series
MECHANICAL DATA
Dimensions in mm : Net Mass: 1.4 g
seating plane
6.73 max
1.1
tab
2.38 max
0.93 max
5.4
4 min
6.22 max
10.4 max
4.6
2
1
0.5
0.5 min
3
0.3
0.5
0.8 max
(x2)
2.285 (x2)
Fig.7. SOT428 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
1.5
2.5
4.57
Fig.8. SOT428 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1045D series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
5
Rev 1.100