INTEGRATED CIRCUITS DATA SHEET TDA1572T AM receiver Product specification File under Integrated Circuits, IC01 May 1992 Philips Semiconductors Product specification AM receiver TDA1572T GENERAL DESCRIPTION Features The TDA1572T integrated AM receiver circuit performs all the active functions and part of the filtering required of an AM radio receiver. It is intended for use in mains-fed home receivers and car radios. The circuit can be used for oscillator frequencies up to 50 MHz and can handle RF signals up to 500 mV. • Inputs protected against damage by static discharge • Gain-controlled RF stage • Double balanced mixer • Separately buffered, voltage-controlled and temperature-compensated oscillator, designed for simple coils RF radiation and sensitivity to interference are minimized by an almost symmetrical design. The controlled-voltage oscillator provides signals with extremely low distortion and high spectral purity over the whole frequency range, even when tuning with variable capacitance diodes. If required, band switching diodes can easily be applied. Selectivity is obtained using a block filter before the IF amplifier. • Gain-controlled IF stage with wide AGC range • Full-wave, balanced envelope detector • Internal generation of AGC voltage with possibility of second-order filtering • Buffered field strength indicator driver with short-circuit protection • AF preamplifier with possibilities for simple AF filtering • Electronic standby switch • IF output for stereo demodulator and search tuning. QUICK REFERENCE DATA SYMBOL VP IP PARAMETER CONDITIONS Supply voltage range Supply current range MIN. TYP. MAX. UNIT 7.5 8.5 14.0 V VP = 8.5 V 15 25 28 mA m = 30% − 1.5 − µV RF input voltage (RMS value) ViFR(rms) ViRF(rms) VoIF(rms) for (S + N)/N = 6 dB m = 80% − 500 − mV IF output voltage (RMS value) Vi = 2 mV(rms) 180 230 290 mV AF output voltage (RMS value) Vi = 2 mV(rms); 240 310 390 mV − 86 − dB 2.5 2.8 3.1 V for THD = 3% fi = 1 MHz; m = 30%; fm = 400 Hz VoAF(rms) AGC range Change of Vi for 1 dB ∆Vi change of VoAF Indicator driver (pin 13) Output voltage Vo Vi = 500 mV(rms); RL = 2.7 kΩ PACKAGE OUTLINE 20-lead mini-pack; plastic (SO20; SOT163A); SOT163-1; 1996 August 13. May 1992 2 May 1992 3 Fig.1 Block diagram and test circuits (connections shown in broken lines are not part of the test circuits). (1) Coil data: TOKO sample no. 7XNS-A7523DY; L1 : N1/N2 = 12/32; Qo = 65; QB = 57. Filter data: ZF = 700 Ω at R3-4 = 3 kΩ; ZI = 4.8 kΩ. Philips Semiconductors Product specification AM receiver TDA1572T Philips Semiconductors Product specification AM receiver TDA1572T PINNING 1 MXO mixer output 2 STB standby switch 3 IFI1 IF input 1 4 IFI2 IF input 2 5 DET detector 6 AFO1 AF output 1 7 AGC1 AGC stage 1 8 ACG2 AGC stage 2 9 AFO2 AF output 2 10 n.c. not connected 11 n.c. not connected 12 IFO IF output 13 IND indicator output 14 OSO buffered oscillator output 15 OSC1 oscillator 1 16 OSC2 oscillator 2 17 VP supply voltage 18 RFI1 RF input 1 19 RFI2 RF input 2 20 GND ground May 1992 Fig.2 Pinning diagram. 4 Philips Semiconductors Product specification AM receiver TDA1572T FUNCTIONAL DESCRIPTION Gain-controlled RF stage and mixer The differential amplifier in the RF stage employs an AGC negative feedback network to provide a wide dynamic range. Very good cross-modulation behaviour is achieved by AGC delays at the various signal stages. Large signals are handled with low distortion and the (S + N)/N ratio of small signals is improved. Low noise working is achieved in the differential amplifier by using transistors with low base resistance. A double balanced mixer provides the IF output signal to pin 1. Oscillator The differential amplifier oscillator is temperature compensated and is suitable for simple coil connection. The oscillator is voltage-controlled and has little distortion or spurious radiation. It is specially suitable for electronic tuning using variable capacitance diodes. Band switching diodes can easily be applied using the stabilized voltage V15-20. An extra buffered oscillator output (pin 14) is available for driving a synthesizer. If this is not needed, resistor RL(14) can be omitted. Gain-controlled IF amplifier This amplifier comprises two cascaded, variable-gain differential amplifier stages coupled by a band-pass filter. Both stages are gain-controlled by the AGC negative feedback network. The IF output is available at pin 12. Detector The full-wave, balanced envelope detector has very low distortion over a wide dynamic range. Residual IF carrier is blocked from the signal path by an internal low-pass filter. AF preamplifier This stage preamplifies the audio frequency output signal. The amplifier output has an emitter follower with a series resistor which, together with an external capacitor, yields the required low-pass for AF filtering. AGC amplifier The AGC amplifier provides a control voltage which is proportional to the carrier amplitude. Second-order filtering of the AGC voltage achieves signals with very little distortion, even at low audio frequencies. This method of filtering also gives fast AGC settling time which is advantageous for electronic search tuning. The AGC settling time can be further reduced by using capacitors of smaller value in the external filter (C16 and C17). The AGC voltage is fed to the RF and IF stages via suitable AGC delays. The capacitor at pin 7 can be omitted for low-cost applications. Field strength indicator output A buffered voltage source provides a high-level field strength output signal which has good linearity for logarithmic input signals over the whole dynamic range. If the field strength information is not needed, RL(13) can be omitted. Standby switch This switch is primarily intended for AM/FM band switching. During standby mode the oscillator, mixer and AF preamplifier are switched off. Short-circuit protection All pins have short-circuit protection to ground. May 1992 5 Philips Semiconductors Product specification AM receiver TDA1572T RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER MIN. MAX. UNIT VP = V17-20 Supply voltage (pin 17) − 16 V |V18-19| Input voltage − 12 V − 0.6 V −V18-19; −V19-20 − VP V I18; I20 Input current (pins 18 and 20) − 200 mA Ptot Total power dissipation − 500 mW Tstg Storage temperature range −55 +150 °C Tamb Operating ambient temperature range −40 +85 °C Tj Junction temperature − +125 °C V18-19; V19-20 Electrostatic handling(1) Ves all pins except pins 3, 6, 9, 14 −2000 +2000 V Ves pins 3, 6, 14 −1500 +2000 V Ves pin 9 −1000 +2000 V Note 1. Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor; (5 pulses, both polarities). THERMAL RESISTANCE From junction to ambient (in free air) May 1992 Rth j-a (max.) 6 = 95 K/W Philips Semiconductors Product specification AM receiver TDA1572T CHARACTERISTICS VP = V17-20 = 8.5 V; Tamb = 25 °C; fi = 1 MHz; fm = 400 Hz; m = 30%; fIF = 460 kHz; measured in test circuit of Fig.1; all voltages referenced to ground; unless otherwise specified. SYMBOL PARAMETER MIN. TYP. MAX. UNIT Supply VP Supply voltage (pin 17) 7.5 8.5 14.0 V IP Supply current (pin 17) 15 25 28 mA RF stage and mixer (pins 18 and 19) VI DC input voltage − VP/2 − V Zi RF input impedance at VI < 300 µV (rms) − 5.5 − kΩ Ci RF input capacitance − 25 − pF Zi RF input impedance at VI > 10 mV (rms) − 8 − kΩ Ci RF input capacitance − 22 − pF Zo IF output impedance (pin 1) 200 − − kΩ Co IF output capacitance − 6 − pF − 6.5 − mA/V − 5 − V − 1.2 − mA − 30 − dB − 500 − mV Conversion transconductance I1/Vi before start of AGC Maximum IF output voltage, inductive V1-17(p-p) coupling to pin 1 (peak-to-peak value) DC value of output current; IO at VI = 0 V (pin 1) AGC range of input stage RF signal handling capability Input voltage (RMS value) Vi(rms) May 1992 for THD = 3% at m = 80% 7 Philips Semiconductors Product specification AM receiver TDA1572T SYMBOL PARAMETER MIN. TYP. MAX. UNIT Oscillator fosc Frequency range 0.1 − 60 MHz 80 130 150 mV 0.5 − 200 kΩ − − 60 Ω − 55 − dB − 4.2 − V 0 − 20 mA − 0.3 − V − 0.8 − V Voltage amplitude (pins 15 to 16) V(rms) R(ext) (RMS value) External load impedance (pins 16 to 15) External load impedance for no R(ext) oscillation (pins 16 to 15) Supply voltage ripple rejection at VP = 100 mV(rms); fp = 100 Hz SVRR (SVRR = 20 log [V17/V15]) Source voltage for switching diodes V15-20 (6 x VBE) (pin 15) DC output current (for switching −IO diodes) (pin 15) Change of output voltage at ∆I15 = 20 mA (switch to maximum load) ∆VI (pin 15) Buffered oscillator output (pin 14) VO DC output voltage Output signal amplitude − 320 − mV ZO Output impedance − 170 − Ω −IO(peak) Output current (peak value) − − 3 mA Vo(p-p) (peak-to-peak value) IF, AGC and AF stages VI DC input voltage (pins 3 and 4) − 2.0 − V Zi IF input impedance (pins 3 to 4) 2.4 3.0 3.9 kΩ Ci IF input capacitance − 7 − pF − 90 − mV − 50 − Ω 180 230 290 mV − 68 − dB − 55 − dB IF input voltage for THD = 3% at m = 80% (pins 3 and 4) ViIF(rms) Zo (RMS value) IF output impedance (pin 12) Unloaded IF output voltage at Vi = 10 mV (pin 12) VoIF(rms) (RMS value) Voltage gain before start of AGC Gv (pins 3 to 4; 6 to 20) AGC range of IF stages: change of V3-4 for 1 dB change of Vo(AF); ∆Vv May 1992 V3-4(ref) = 75 mV(rms) 8 Philips Semiconductors Product specification AM receiver TDA1572T SYMBOL PARAMETER MIN. TYP. MAX. UNIT AF output voltage (RMS value) VoAF(rms) at V3-4(IF) = 50 µV(rms) − 130 − mV VoAF(rms) at V3-4(IF) = 1 mV(rms) − 310 − mV Zo AF output impedance (pin 6) 2.8 3.5 4.2 kΩ Zo AF output impedance (pin 9) 12.4 15.5 18.6 kΩ − − 140 mV Indicator driver (pin 13) Output voltage at Vi = 0 mV(rms); Vo RL = 2.7 kΩ Output voltage at Vi = 500 mV(rms); Vo RL = 2.7 kΩ 2.5 2.8 3.1 V RL Load resistance 1.5 − − kΩ −Io Output current at Vi = 500 mV(rms) − − 2.0 mA Zo Output impedance at −Io = 0.5 mA − 220 − Ω Vo Reverse output voltage at AM off − 6 − V Standby switch Switching threshold at; VP = 7.5 to 14 V Tamb = −40 to + 80 °C V2-20 ON-voltage 0 − 2.0 V V2-20 OFF-voltage 3.5 − 20.0 V −I2 ON-current at V2-20 = 0 V − 100 200 µA I2 OFF-current at V2-20 = 14 V − − 10 µA May 1992 9 Philips Semiconductors Product specification AM receiver TDA1572T OPERATING CHARACTERISTICS VP = 8.5 V; fi = 1 MHz; m = 30%; fm = 400 Hz; Tamb = 25 °C; measured in Fig.1; unless otherwise specified SYMBOL PARAMETER MIN. TYP. MAX. UNIT RF sensitivity RF input voltage (RMS value) ViRF(rms) for (S + N)/N = 6 dB − 1.5 − µV ViRF(rms) for (S + N)/N = 26 dB − 15 − µV ViRF(rms) for (S + N)/N = 46 dB − 150 − µV ViRF(rms) at start of AGC − 30 − µV RF large signal handling RF input voltage (RMS value) ViRF(rms) at THD = 3%; m = 80% − 500 − mV ViRF(rms) at THD = 3%; m = 30% − 700 − mV ViRF(rms) at THD = 10%; m = 30% − 900 − mV − 86 − dB − 91 − dB 180 230 290 mV at Vi = 4 µV(rms); m = 80% − 130 − mV at Vi = 2 mV(rms) 240 310 390 mV AGC range Change of Vi for 1 dB change ∆Vi of VoAF; Vi(ref) = 500 mV(rms) Change of Vi for 6 dB change ∆Vi of VoAF; Vi(ref) = 500 mV(rms) Output signal (RMS value) VoIF(rms) IF output voltage at Vi = 2 mV(rms) AF output voltage VoAF(rms) VoAF(rms) Total harmonic distortion THD at Vi = 2 mV(rms); m = 30% − 0.5 − % THD at Vi = 2 mV(rms); m = 80% − 1.0 − % THD at Vi = 500 mV(rms); m = 30% − 1.0 − % − 58 − dB (SVRR = 20 log [VP/VoAF]) − 38 − dB SVRR (a) additional AF signal at IF output − 0(1) − dB SVRR (b) add modulation at IF output (mref = 30%) − 40 − dB (S + N)/N Signal-to-noise ratio at Vi = 100 mV(rms) Supply voltage ripple rejection at Vi = 2 mV(rms) VP = 100 mV(rms); fp = 100 Hz SVRR May 1992 10 Philips Semiconductors Product specification AM receiver TDA1572T SYMBOL PARAMETER MIN. TYP. MAX. UNIT Unwanted signals Suppression of IF whistles at Vi = 15 µV; m = 0% related to AF signal of m = 30% α2IF at fi ≈ 2 × fIF − 37 − dB α3IF at fi ≈ 3 × fIF − 44 − dB IF suppression at RF input; αIF for symmetrical input − 40 − dB αIF for asymmetrical input − 40 − dB Residual oscillator signal at mixer output; I1(osc) at fosc − 1 − µA I1(2osc) at 2 × fosc − 1.1 − µA Note 1. AF signals at the IF output will be suppressed by a coupling capacitor to the demodulator and by full wave-detection in the demodulator. Fig.4 Fig.3 May 1992 AF output as a function of RF input in the circuit of Fig.1; fi = 1 MHz; fm = 400 Hz; m = 30%. 11 Total harmonic distortion and (S + N)/N as functions of RF input in the circuit of Fig.1; m = 30% for (S + N)/N curve and m = 80% for THD curve. Philips Semiconductors Product specification AM receiver TDA1572T Fig.5 Total harmonic distortion as a function of modulation frequency at Vi = 5 mV; m = 80%; measured in the circuit of Fig.1 with C7-20(ext) = 0 µF and 2.2 µF. ___________ with IF filter; −− with AF filter; −−−−−− Fig.6 May 1992 Indicator driver voltage as a function of RF input in the circuit of Fig.1. Fig.7 12 with IF and AF filters. Typical frequency response curves from Fig.1 showing the effect of filtering. Philips Semiconductors Product specification AM receiver TDA1572T Fig.8 IF output voltage as a function of RF input in the circuit of Fig.1; fi = 1 MHz. Fig.9 May 1992 Forward transfer impedance as a function of intermediate frequency for filters 1 to 4 shown in Fig.10; centre frequency = 455 kHz. 13 Philips Semiconductors Product specification AM receiver TDA1572T APPLICATION INFORMATION Fig.10 IF filter variants applied to the circuit of Fig.1. For filter data, refer to Table 1. May 1992 14 Product specification AM receiver TDA1572T Fig.11 Application diagram. Philips Semiconductors May 1992 15 Philips Semiconductors Product specification AM receiver TDA1572T Fig.12 (S + N)/N as a function of input voltage; measured in the circuit of Fig.11 for AM stereo. Fig.13 Total harmonic distortion (THD) as a function of input voltage; measured in the circuit of Fig.11 for AM stereo. May 1992 16 May 1992 65 (typ.) Qo 17 49 58 52 63 S18kHz S27kHz 52 (L1) (N2) 66 54 36 3.6 0.68 4.2 24 4.2 3 4 18 (L2) 7XNS-A7521AIH (N1) 60 0.08 29 : 29 4700 L2 SFZ455A 7XNS-A7518DY 75 0.09 15 : 31 3900 L1 3 74 64 42 4.0 0.68 55 4.8 38 4.5 3 6 SFT455B 7XNS-A7519DY 75 0.09 13 : 31 3900 L1 4 * The beginning of an arrow indicates the beginning of a winding; N1 is always the inner winding, N2 the outer winding. 31 35 S9kHz 0.67 0.70 ZF 3.8 40 57 QB Bandwidth (−3 dB) 3.6 3.8 4.8 ZI Filter data S9kHz 24 3 4 24 3 RG, RL SFZ455A L7PES-A0060BTG 4.2 4 D (typical value) 2 13 : (33 + 66) Bandwidth (−3 dB) 4.2 SFZ455A Murata type Resonators Toko order no. 7XNS-A7523DY 50 0.09 Diameter of CU laminated wire Schematic* of windings 0.08 12 : 32 N1 : N2 430 3900 Value of C L1 L1 Coil data 1 10 0.70 20 1.8 10 2 6 SFH450F 50 0.07 26 : 32 4700 L1 5 dB dB dB kHz kΩ kΩ dB kHz kΩ dB mm pF UNIT Data for IF filters shown in Fig.10 (Filter 1 to 4) and Fig.11 (Filter 5). Criteria for adjustment is IF = maximum (optimum selectivity curve at centre frequency f0 = 455 kHz). Filter 5 is used for AM stereo application with centre frequency f0 = 450 kHz. FILTER NO. Table 1 Philips Semiconductors Product specification AM receiver TDA1572T Philips Semiconductors Product specification AM receiver TDA1572T PACKAGE OUTLINE SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 D E A X c HE y v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 10 e bp detail X w M 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.30 0.10 2.45 2.25 0.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.9 0.4 0.012 0.096 0.004 0.089 0.01 0.019 0.013 0.014 0.009 0.51 0.49 0.30 0.29 0.050 0.42 0.39 0.055 0.043 0.016 0.043 0.039 0.01 0.01 0.004 0.035 0.016 inches 0.10 Z (1) θ Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT163-1 075E04 MS-013AC May 1992 EIAJ EUROPEAN PROJECTION ISSUE DATE 92-11-17 95-01-24 18 o 8 0o Philips Semiconductors Product specification AM receiver TDA1572T SOLDERING Wave soldering Introduction Wave soldering techniques can be used for all SO packages if the following conditions are observed: There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. • The longitudinal axis of the package footprint must be parallel to the solder flow. • The package footprint must incorporate solder thieves at the downstream end. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Reflow soldering Reflow soldering techniques are suitable for all SO packages. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. May 1992 19 Philips Semiconductors Product specification AM receiver TDA1572T DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1992 20