INTEGRATED CIRCUITS DATA SHEET TDA1072AT AM receiver circuit Product specification File under Integrated Circuits, IC01 March 1989 Philips Semiconductors Product specification AM receiver circuit TDA1072AT GENERAL DESCRIPTION The TDA 1072AT integrated AM receiver circuit performs the active and part of the filtering functions of an AM radio receiver. It is intended for use in mains-fed home receivers and car radios. The circuit can be used for oscillator frequencies up to 50 MHz and can handle RF signals up to 500 mV. RF radiation and sensitivity to interference are minimized by an almost symmetrical design. The voltage-controlled oscillator provides signals with extremely low distortion and high spectral purity over the whole frequency range even when tuning with variable capacitance diodes. If required, band switching diodes can easily be applied. Selectivity is obtained using a block filter before the IF amplifier. Features • Inputs protected against damage by static discharge • Gain-controlled RF stage • Double balanced mixer • Separately buffered, voltage-controlled and temperature-compensated oscillator, designed for simple coils • Gain-controlled IF stage with wide AGC range • Full-wave, balanced envelope detector • Internal generation of AGC voltage with possibility of second-order filtering • Buffered field strength indicator driver with short-circuit protection • AF preamplifier with possibilities for simple AF filtering • Electronic standby switch. QUICK REFERENCE DATA PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Supply voltage range VP 7.5 − 10 V Supply current range IP 15 − 26 mA VI − 1.5 − µV VI − 500 − mV VO(AF) − 310 − mV − 86 − dB − 2.8 − V RF input voltage for S+N/N = 6 dB at m = 30% RF input voltage for 3% total harmonic distortion (THD) at m = 80% AF output voltage with VI = 2 mV; fI = 1 MHz; m = 30% and fm = 400 Hz AGC range: change of VI for 1 dB change of VO(AF) Field strength indicator voltage at VI = 500 mV; RL(9) = 2.7 kΩ VIND PACKAGE OUTLINE 16-lead mini-pack; plastic (SO16; SOT109A); SOT109-1; 1996 August 13. March 1989 2 Philips Semiconductors Product specification AM receiver circuit TDA1072AT (1) Coil data: TOKO sample no. 7XNS-A7523DY; L1: N1/N2 = 12/32; Qo = 65; QB = 57. Filter data: ZF = 700 Ω at R3-4 = 3 kΩ; Z1 = 4.8 kΩ. Fig.1 Block diagram and test circuit (connections shown in broken lines are not part of the test circuit). March 1989 3 Philips Semiconductors Product specification AM receiver circuit TDA1072AT FUNCTIONAL DESCRIPTION Gain-controlled RF stage and mixer The differential amplifier in the RF stage employs an AGC negative feedback network to provide a wide dynamic range. Very good cross-modulation behaviour is achieved by AGC delays at the various signal stages. Large signals are handled with low distortion and the S/N ratio of small signals is also improved. Low noise working is achieved in the differential amplifier by using transistors with a low base resistance. A double balanced mixer provides the IF output to pin 1. Oscillator The differential amplifier oscillator is temperature compensated and is suitable for simple coil connection. The oscillator is voltage-controlled and has little distortion or spurious radiation. It is specially suitable for electronic tuning using variable capacitance diodes. Band switching diodes can easily be applied using the stabilized voltage V11-16. An extra buffered oscillator output is available for driving a synthesizer. If this is not needed, resistor RL(10) can be omitted. Gain-controlled IF amplifier This amplifier comprises two cascaded, variable-gain differential amplifier stages coupled by a band-pass filter. Both stages are gain-controlled by the AGC negative feedback network. Detector The full-wave, balanced envelope detector has very low distortion over a wide dynamic range. The residual IF carrier is blocked from the signal path by an internal low-pass filter. AF preamplifier This stage preamplifies the audio frequency output. The amplifier output stage uses an emitter follower with a series resistor which, together with an external capacitor, provides the required low-pass filtering for AF signals. AGC amplifier The AGC amplifier provides a control voltage which is proportional to the carrier amplitude. Second-order filtering of the AGC voltage achieves signals with very little distortion, even at low audio frequencies. This method of filtering also gives a fast AGC settling time which is advantageous for electronic search tuning. The AGC settling time can be further reduced by using capacitors of smaller value in the external filter. The AGC voltage is fed to the RF and IF stages via suitable AGC delays. The capacitor at pin 7 can be omitted for low-cost applications. Field strength indicator output A buffered voltage source provides a high-level field strength output signal which has good linearity for logarithmic input signals over the whole dynamic range. If field strength information is not needed, RL(9) can be omitted. Standby switch This switch is primariIy intended for AM/FM band switching. During standby mode the oscillator, mixer and demodulator are switched off. Short-circuit protection All pins have short-circuit protection to ground. March 1989 4 Philips Semiconductors Product specification AM receiver circuit TDA1072AT RATINGS Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) PARAMETER MIN. MAX. UNIT V13 − 12 V pins 14-15 V14-15 − 10 V pins 14-16 V14-16 − VP V pins 15-16 V15-16 − VP V pins 14-16 V14-16 − −0.6 V pins 15-16 V15-16 − −0.6 V I14-15 − 200 mA Ptot − 300 mW Supply voltage CONDITIONS VP = V13-16 SYMBOL Input voltage Input current (pins 14 and 15) Total power dissipation (note 1) Operating ambient temperature range Tamb −40 + 80 °C Storage temperature range Tstg −55 + 150 °C Junction temperature Tj − + 125 °C Note 1. Mounted on epoxiprint. THERMAL RESISTANCE From junction to ambient Rth j-a 300 K/W 160 K/W(1) Note 1. Mounted on epoxiprint. March 1989 5 Philips Semiconductors Product specification AM receiver circuit TDA1072AT CHARACTERISTICS VP = V13-16 = 8.5 V; Tamb = 25 °C; fi = 1 MHz; fm = 400 Hz; m = 30%; fIF = 460 kHz; measured in test circuit of Fig.1; all measurements are with respect to ground (pin 16); unless otherwise specified PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Supplies Supply voltage (pin 13) V13 7.5 8.5 10 V Supply current (pin 13) I13 15 23 27 mA V14-15 − VP / 2 − V R14-15 − 5.5 − kΩ C14-15 − 25 − pF R14-15 − 8 − kΩ RF stage and mixer Input voltage (DC value) RF input impedance at VI < 300 µV RF input impedance at VI > 10 mV C14-15 − 22 − pF R1 500 0 0 kΩ C1 − 6 − pF I1/VI − 6.5 − mA/V V1(p-p) − 5 − V I1 − 1.2 − mA − 30 − dB VI(rms) − 500 − mV ∆f 0.6 − 60 MHz (peak-to-peak value) V11-12(p-p) − 130 150 mV External load impedance R11-12(ext) 0.5 − 200 kΩ R11-12(ext) − − 60 Ω IF output impedance Conversion transconductance before start of AGC Maximum IF output voltage, inductive coupling to pin 1, (peak-to-peak value) DC value of output current (pin 1) at VI = 0 V AGC range of input stage RF signal handling capability: input voltage for THD = 3% at m = 80% (RMS value) Oscillator Frequency range Oscillator amplitude (pins 11 to 12) External load impedance for no oscillation Ripple rejection at VP = 100 mV (RMS value); fp = 100 Hz (RR = 20 log [V13/V11]) March 1989 6 Philips Semiconductors Product specification AM receiver circuit PARAMETER TDA1072AT CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Source voltage for switching diodes (6 × VBE) V11 − 4.2 − V I11 0 − 5 mA ∆V11 − 0.5 − V V10 − 0.7 − V DC output current (for switching diodes) VP = V13 ≤9V Change of output voltage at ∆I11 = 20 mA (switch to maximum load) Buffered oscillator output DC output voltage Output signal amplitude V10(p-p) − 320 − mV Output impedance R10 − 170 − Ω Output current I10(peak) − − −3 mA DC input voltage V3-4 − 2 − V IF input impedance R3-4 2.4 3.0 3.9 kΩ C3-4 − 7 − pF V3-4 − 90 − mV V3-4/V6 − 68 − dB ∆V3-4 − 55 − dB VO(AF) − 130 − mV VO(AF) − 310 − mV ZO − 3.5 − kΩ RL(9) = 2.7 kΩ V9 − 20 150 mV RL(9) = 2.7 kΩ V9 2.5 2.8 3.1 V RL(9) 2.7 − − kΩ (peak-to-peak value) IF, AGC and AF stages IF input voltage for THD = 3% at m = 80% Voltage gain before start of AGC AGC range of IF stages: change of V3-4 for 1 dB change of VO(AF); V3-4(ref) = 75 mV AF output voltage at V3-4(IF) = 50 µV AF output voltage at V3-4(IF) = 1 mV AF output impedance (pin 6) Indicator driver Output voltage at VI = 0 mV Output voltage at VI = 500 mV Load resistance March 1989 7 Philips Semiconductors Product specification AM receiver circuit PARAMETER TDA1072AT CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Standby switch Switching threshold at VP = 7.5 to 18 V; Tamb = −40 to +80 °C ON-voltage V2 0 − 2 V OFF-voltage V2 3.5 − 20 V ON-current V2 = 0 V I2 − − −200 µA OFF-current V2 = 20 V I2 − − 10 µA OPERATING CHARACTERISTICS VP = 8.5 V; fI = 1 MHz; m = 30%; fm = 400 Hz; Tamb = 25 °C; measured in Fig.1; unless otherwise specified PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT RF sensitivity RF input required for S+N/N = 6 dB VI − 1.5 − µV S+N/N = 26 dB VI − 15 − µV S+N/N = 46 dB VI − 150 − µV VI − 30 − µV THD = 3%; m = 80% VI − 500 − mV THD = 3%; m = 30% VI − 700 − mV THD = 10%; m = 30% VI − 900 − mV RF input at start of AGC RF large signal handling RF input at AGC range Change of VI for 1 dB change of VO(AF) VI(ref) = 500 mV ∆VI − 86 − dB 6 dB change of VO(AF) VI(ref) = 500 mV ∆VI − 91 − dB Output signal AF output voltage at VI = 4 µV m = 80% VI = 1 mV VO(AF) − 130 − mV VO(AF) 240 310 390 mV Total harmonic distortion at VI = 1 mV m = 80% dtot − 0.5 − % VI = 500 mV m = 30% dtot − 1 − % VI = 100 mV S+N/N − 58 − dB Signal-to-noise ratio March 1989 8 Philips Semiconductors Product specification AM receiver circuit PARAMETER TDA1072AT CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Ripple rejection at VI = 2 mV VP = 100 mV (RMS value) fp = 100 Hz RR − 38 − dB at fI ≈ 2 × fIF α2IF − 37 − dB at fI ≈ 3 × fIF α3IF − 44 − dB for symmetrical input αIF − 40 − dB for asymmetrical input αIF − 40 − dB at fosc I(osc) − 1 − µA at 2 × fosc I(2osc) − 1.1 − µA (RR = 20 log [VP/VO(AF)]) Unwanted signals Suppression of IF whistles at VI = 15 µV; m = 0% related to AF signal of m = 30% IF suppression at RF input Residual oscillator signal at mixer output March 1989 9 Philips Semiconductors Product specification AM receiver circuit TDA1072AT APPLICATION INFORMATION (1) Capacitor values depend on crystal type. (2) Coil data: 9 windings of 0.1 mm dia laminated Cu wire on TOKO coil set 7K 199CN; Qo = 80. Fig.2 Oscillator circuit using quartz crystal; centre frequency = 27 MHz. Fig.4 Fig.3 AF output as a function of RF input in the circuit of Fig.1; fI = 1 MHz; fm = 400 Hz; m = 30%. March 1989 10 Total harmonic distortion and S+N/N as functions of RF input in the circuit of Fig.1; m = 30% for (S+N)/N curve and m = 80% for THD curve. Philips Semiconductors Product specification AM receiver circuit Fig.5 TDA1072AT Total harmonic distortion as a function of modulation frequency at VI = 5 mV; m = 80%; measured in the circuit of Fig.1 with C7-16(ext) = 0 µF and 2.2 µF. with IF filter -- with AF filter Fig.6 Indicator driver voltage as a function of RF input in the circuit of Fig.1. March 1989 Fig.7 11 with IF and AF filter Typical frequency response curves from Fig.1 showing the effects of filtering. Philips Semiconductors Product specification AM receiver circuit TDA1072AT Fig.8 Car radio application with inductive tuning. Fig.9 AF output as a function of RF input using the circuit of Fig.8 with that of Fig.1. March 1989 12 Philips Semiconductors Product specification AM receiver circuit TDA1072AT Fig.10 Suppression of cross-modulation as a function of input signal, measured in the circuit of Fig.8 with the input circuit as shown in Fig.11. Curve is for wanted VO(AF)/unwanted VO(AF) = 20 dB; Vrfw, Vrfu are signals at the aerial input, V'aew, V'aeu are signals at the unloaded output of the aerial. Wanted signal (V'aew, Vrfw): fi = 1 MHz; fm = 400 Hz; m = 30%. Unwanted signal (V'aeu, Vrfu): fi = 900 kHz; fm = 400 Hz; m = 30%. Effective selectivity of input tuned circuit = 21 dB. Fig.11 Input circuit to show cross-modulation suppression (see Fig.10). March 1989 13 Philips Semiconductors Product specification AM receiver circuit TDA1072AT Fig.12 Oscillator amplitude as a function of the impedance at pins 11 and 12 in the circuit of Fig.8. Fig.13 Total harmonic distortion and (S+N)/N as functions of RF input using the circuit of Fig.8 with that of Fig.1. March 1989 14 Philips Semiconductors Product specification AM receiver circuit TDA1072AT Fig.14 Forward transfer impedance as a function of intermediate frequency for filters 1 to 4 shown in Fig.14; centre frequency = 455 kHz. March 1989 15 Philips Semiconductors Product specification AM receiver circuit TDA1072AT Fig.15 IF filter variants applied to the circuit of Fig.1; for filter data refer to Table 1. March 1989 16 March 1989 laminated wire 17 4 3 4.2 24 D (typical value) RG, RL Bandwidth (−3 dB) S9kHz 40 0.67 3.8 31 49 58 57 0.70 3.6 35 52 63 QB ZF Bandwidth (−3 dB) S9kHz S18kHz S27kHz 52 (L1) 66 54 36 3.6 0.68 4.2 24 4.2 3 4 SFZ455A 7XNS-A7518DY 75 0.09 15 : 31 3900 L1 (N2) 18 (L2) 7XNS-A7521AIH (N1) 60 0.08 29 : 29 4700 L2 3 74 64 42 4.0 0.68 55 4.8 38 4.5 3 6 SFT455B 7XNS-A7519DY 75 0.09 13 : 31 3900 L1 4 dB dB dB kHz kΩ kΩ dB kHz kΩ dB mm pF UNIT AM receiver circuit * The beginning of an arrow indicates the beginning of a winding; N1 is always the inner winding. N2 the outer winding. 3.8 4.8 24 4.2 3 4 SFZ455A ZI Filter data SFZ455A L7PES-A0060BTG 50 7XNS-A7523DY 0.08 Murata type Resonators Toko order no. Schematic * of windings Qo 2 13 : (33 + 66) 65 (typ.) 12 : 32 N1: N2 430 L1 0.09 3900 Value of C Diameter of Cu L1 Coil data 1 Data for IF filters shown in Fig.15. Criterium for adjustment is ZF = maximum (optional selectivity curve at centre frequency fo = 455 kHz). See also Fig.14. FILTER NO. Table 1 Philips Semiconductors Product specification TDA1072AT AM receiver circuit March 1989 18 Fig.16 Car radio application with capacitive diode tuning and electronic MW/LW switching. The circuit includes pre-stage AGC optimised for good large-signal handling. (1) Values of capacitors depend on the selected group of capacitive diodes BB112. (2) For IF filter and coil data refer to Fig.1. Philips Semiconductors Product specification TDA1072AT Philips Semiconductors Product specification AM receiver circuit TDA1072AT PACKAGE OUTLINE SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 D E A X c y HE v M A Z 16 9 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 8 e 0 detail X w M bp 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 10.0 9.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.01 0.019 0.0098 0.39 0.014 0.0075 0.38 0.050 0.24 0.23 0.041 0.039 0.016 0.028 0.020 inches 0.0098 0.057 0.069 0.0039 0.049 0.16 0.15 0.01 0.01 0.028 0.004 0.012 θ Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT109-1 076E07S MS-012AC March 1989 EIAJ EUROPEAN PROJECTION ISSUE DATE 91-08-13 95-01-23 19 o 8 0o Philips Semiconductors Product specification AM receiver circuit TDA1072AT During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering techniques can be used for all SO packages if the following conditions are observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. • The longitudinal axis of the package footprint must be parallel to the solder flow. • The package footprint must incorporate solder thieves at the downstream end. March 1989 20 Philips Semiconductors Product specification AM receiver circuit TDA1072AT DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1989 21