TPC8203 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 14 mΩ (typ.) High forward transfer admittance : |Yfs| = 8 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode : Vth = 0.8~2.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 30 V Drain−gate voltage (RGS = 20 kΩ) VDGR 30 V Gate−source voltage VGSS ±20 V DC (Note 1) ID 6 Pulse (Note 1) IDP 24 PD (1) 1.5 PD (2) 1.0 PD (1) 0.75 PD 2) 0.45 Single pulse avalanche energy (Note 4) EAS 46.8 mJ Avalanche current IAR 6 A Repetitive avalanche energy (Note 2a, Note 3b, Note 5) EAR 0.10 mJ Channel temperature Tch 150 ℃ Storage temperature range Tstg −55∼150 ℃ Drain current Single-device operation (Note 3a) Drain power dissipation Single-devece value (t = 10 s) (Note 2a) at dual operation (Note 3b) Single-device operation (Note 3a) Drain power dissipation Single-devece value (t = 10 s) (Note 2b) at dual operation (Note 3b) A W JEDEC ― JEITA ― TOSHIBA 2-6J1E Weight: 0.080 g (typ.) W Circuit Configuration Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-05-17 TPC8203 Thermal Characteristics Characteristics Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 83.3 Rth (ch-a) (2) 125 Rth (ch-a) (1) 167 Rth (ch-a) (2) 278 Unit °C/W Marking TPC8203 Type * Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω, IAR = 6.0 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: • on lower left of the marking indicates Pin 1. * shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.) 2 2002-05-17 TPC8203 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA Drain cut−OFF current IDSS VDS = 30 V, VGS = 0 V — — 10 µA V (BR) DSS ID = 10 mA, VGS = 0 V 30 — — V V (BR) DSX ID = 10 mA, VGS = −20 V 15 — — VDS = 10 V, ID = 1 mA 0.8 — 2.5 RDS (ON) VGS = 4 V, ID = 3 A — 22 32 RDS (ON) VGS = 10 V, ID = 3 A — 14 21 Forward transfer admittance |Yfs| VDS = 10 V, ID = 3 A 4 8 — Input capacitance Ciss — 1700 — Reverse transfer capacitance Crss — 260 — Output capacitance Coss — 380 — tr — 10 — ton — 20 — Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Rise time Turn−ON time Vth VDS = 10 V, VGS = 0 V, f = 1 MHz Switching time V mΩ S pF ns Fall time tf — 35 — toff — 120 — Total gate charge (Gate−source plus gate−drain) Qg — 40 — Gate−source charge Qgs — 28 — Gate−drain (“miller”) charge Qgd — 12 — Turn−OFF time VDD ≈ 24 V, VGS = 10 V, ID = 6 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Forward voltage (diode) Symbol Test Condition Min Typ. Max Unit IDRP — — — 24 A — — −1.2 V VDSF IDR = 6 A, VGS = 0 V 3 2002-05-17 TPC8203 4 2002-05-17 TPC8203 PD – Ta DRAIN POWER DISSIPATION PD (W) 2.0 1.5 (1) (2) 1.0 (3) 0.5 0 0 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) t = 10 s (4) 50 100 150 200 AMBIENT TEMPERATURE Ta (°C) 5 2002-05-17 TPC8203 rth − tw 1000 500 TRANSIENT THERMAL IMPEDANCE rth (°C/W) 300 100 DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) (4) (3) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) (2) (1) 50 30 10 5 3 1 0.5 0.3 SINGLE PULSE 0.1 0.001 0.01 0.1 1 PULSE WIDTH tw 6 10 100 1000 (s) 2002-05-17 TPC8203 RESTRICTIONS ON PRODUCT USE 000707EAA • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice. 7 2002-05-17