TPCF8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8301 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) • Enhancement model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS −20 V Drain-gate voltage (RGS = 20 kΩ) VDGR −20 V Gate-source voltage VGSS ±8 V Drain current DC (Note 1) ID −2.7 Pulse (Note 1) IDP −10.8 Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) PD (1) 1.35 PD (2) 1.12 Single-device operation (Note 3a) PD (1) 0.53 PD (2) 0.33 Drain power dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Single pulse avalanche energy (Note 4) A JEDEC ― JEITA ― TOSHIBA 2-3U1B Weight: 0.011 g (typ.) W EAS 1.2 mJ Avalanche current IAR −1.35 A Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) EAR 0.11 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Circuit Configuration 8 7 6 5 1 2 3 4 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-16 TPCF8301 Thermal Characteristics Characteristics Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Symbol Max Rth (ch-a) (1) 92.6 Rth (ch-a) (2) 111.6 Rth (ch-a) (1) 235.8 Rth (ch-a) (2) 378.8 Unit °C/W Single-device operation Thermal resistance, (Note 3a) channel to ambient (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) °C/W Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6): See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 μA V (BR) DSS ID = −10 mA, VGS = 0 V −20 ⎯ ⎯ V (BR) DSX ID = −10 mA, VGS = 8 V −12 ⎯ ⎯ Vth VDS = −10 V, ID = −200 μA −0.5 ⎯ −1.2 RDS (ON) VGS = −1.8 V, ID = −0.7 A ⎯ 215 300 Gate threshold voltage Drain-source ON resistance Forward transfer admittance RDS (ON) VGS = −2.5 V, ID = −1.4 A ⎯ 110 160 RDS (ON) VGS = −4.5 V, ID = −1.4 A ⎯ 72 110 |Yfs| VDS = −10 V, ID = −1.4 A 2.4 4.7 ⎯ ⎯ 470 ⎯ ⎯ 70 ⎯ ⎯ 80 ⎯ ⎯ 5 ⎯ ⎯ 9 ⎯ ⎯ 8 ⎯ ⎯ 26 ⎯ ⎯ 6 ⎯ ⎯ 4 ⎯ ⎯ 2 ⎯ Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = −10 V, VGS = 0 V, f = 1 MHz tr VGS Turn-on time ton Fall time Turn-off time tf toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd −5 V 4.7 Ω Switching time ID = −1.4 A VOUT 0V RL = 7.14 Ω Drain-source breakdown voltage VDD ∼ − −10 V Duty < = 1%, tw = 10 μs VDD ∼ − −16 V, VGS = −5 V, ID = −2.7 A V V mΩ S pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ −10.8 A ⎯ ⎯ 1.2 V VDSF IDR = −2.7 A, VGS = 0 V 2 2006-11-16 TPCF8301 Marking (Note 6) Lot code (month) Part No. (or abbreviation code) Pin #1 Lot No. F3C Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device 25.4 25.4 FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) (a) (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −1.35 A Note 5: Repetitive rating: Pulse width limited by maximum channel temperature. Note 6: A dot on the lower left of the marking indicates Pin 1 3 2006-11-16 TPCF8301 ID – VDS ID – VDS −5 −10 −2.5 −4 −4.5 −2.8 −5 −3 −1.8 −3 −2 VGS = −1.5 V −1 0 0 −0.4 −0.6 Drain-source voltage −0.8 −3 −4 −6 −2 −4 −1.8 VGS = −1.5 V 0 0 −1.0 −1 VDS (V) −2 VDS (V) −3 Ta = 25°C Ta = −55°C −1 0 0 Ta = 100°C −0.5 −1.0 −1.5 Gate-source voltage −2.0 −0.8 −0.6 −0.4 ID = −2.7 A −0.2 −1.4 A −0.7 A 0 0 −2.5 −2 VGS (V) −4 Gate-source voltage −8 VGS (V) Common source VDS = −10 V Ta = 25°C Pulse test Pulse test Drain-source on resistance RDS (ON) (mΩ) |Yfs| (S) Forward transfer admittance Common source Ta = −55°C Ta = 25°C Ta = 100°C −1 −6 RDS (ON) – ID 1000 10 1 −0.1 VDS (V) Common source Ta = 25°C Pulse test |Yfs| – ID 100 −5 VDS – VGS Common source VDS = −10 V Pulse test −2 −4 −1.0 Drain-source voltage Drain current ID (A) −4 −3 Drain-source voltage ID – VGS −5 Common source Ta = 25°C Pulse test −3.5 −2 Common source Ta = 25°C Pulse test −0.2 −2.5 −5 −8 −3.5 −2.8 −4.5 Drain current ID (A) Drain current ID (A) −4 −2 −1.8 V −2.5 V 100 VGS = −4.5 V 10 −0.1 −10 Drain current ID (A) −1 −10 Drain current ID (A) 4 2006-11-16 TPCF8301 RDS (ON) – Ta IDR – VDS −100 ID = −1.4 A Common source Pulse test VGS = −1.8 V 200 ID = −1.4 A ID = −2.7 A 150 100 50 −0.7 A −2.5 V ID = −0.7, −1.4, −2.7 A −4.5 V 0 −80 −40 0 40 80 120 Ta = 25°C (A) −0.7 A Drain reverse current IDR Drain-source on resistance RDS (ON) (mΩ) 250 Pulse test −10 −1.8 −1 −1 0 160 −4.5 −2.5 0.4 Ambient temperature Ta (°C) 0.8 Vth (V) 1000 Gate threshold voltage (pF) Capacitance C Common source VGS = 0 V f = 1 MHz Ta = 25°C Ciss Coss Crss −1 −10 Drain-source voltage −1.5 −0.5 1.2 (2) (3) 0 0 (4) 40 80 80 120 160 Dynamic input/output characteristics 0.8 0.4 40 −20 VDS (V) (1) 0 VDS (V) Drain-source voltage Drain power dissipation PD (W) 1.6 −40 Ambient temperature Ta (°C) −100 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t=5s VDS (V) −1.0 PD – Ta 2 2.0 Common source VDS = −10 V ID = −200 μA Pulse test −0.0 −80 10 −0.1 1.6 Vth – Ta −2.0 100 1.2 Drain-source voltage Capacitance – VDS 10000 VGS = 0 V 120 Ambient temperature Ta (°C) −8 V −16 −8 −4 V VDS −12 VDD = −16 V −6 VGS −8 Common source −4 ID = −2.7 A Ta = 25°C −4 −2 Pulse test 0 0 160 −10 −2 −4 −6 −8 VGS (V) Common source Gate-source voltage 300 0 −10 Total gate charge Qg (nC) 5 2006-11-16 TPCF8301 rth – tw Transient thermal impedance rth (°C/W) 1000 (4) (3) (2) (1) 100 Device mounted on a glass-epoxy board (a) 10 (1) Single-device operation (2) Single-device value at dual operation Device mounted on a glass-epoxy board (b) (3) Single-device operation 1 1m (4) Single-device value at dual operation 10 m 100 m 1 Pulse width 10 tw 100 1000 (s) Safe operating area Drain current ID (A) −100 ID max (pulsed)* −10 1 ms* 10 ms* −1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature −0.1 −0.1 VDSS max −1 Drain-source voltage −10 −100 VDS (V) 6 2006-11-16 TPCF8301 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-16