DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF548 UHF push-pull power MOS transistor Product specification Supersedes data of Oct 1992 2003 Sep 26 Philips Semiconductors Product specification UHF push-pull power MOS transistor FEATURES BLF548 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability 1 2 d2 halfpage g2 • Designed for broadband operation. 5 DESCRIPTION The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors. 4 Top view MSB008 DESCRIPTION 1 drain 1 2 drain 2 3 gate 1 4 gate 2 5 source MBB157 Fig.1 Simplified outline and symbol. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. WARNING PINNING - SOT262A2 PIN d1 5 3 Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. s g1 Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull common source test circuit. MODE OF OPERATION CW, class-B 2003 Sep 26 f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) 500 28 150 >10 >50 2 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor section unless otherwise specified VDS drain-source voltage − 65 V VGS gate-source voltage − ±20 V ID drain current (DC) − 15 A Ptot total power dissipation 330 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tmb ≤ 25 °C; total device; both sections − equally loaded THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-mb thermal resistance from junction to mounting base Tmb = 25 °C; Ptot = 330 W; total device; both sections equally loaded 0.5 K/W Rth mb-h thermal resistance from mounting base to heatsink total device; both sections equally loaded 0.15 K/W MRA532 MRA997 102 handbook, halfpage 400 handbook, halfpage P tot (W) ID (A) 350 (2) 300 250 (2) (1) 10 (1) 200 150 100 50 1 1 10 VDS (V) 0 102 0 20 40 60 80 (1) Current in this area may be limited by RDSon. (1) Continuous operation. (2) Tmb = 25 °C. Total device; both sections equally loaded. (2) Short-time operation during mismatch. Total device; both sections equally loaded. Fig.2 DC SOAR. 2003 Sep 26 100 120 Th (oC) Fig.3 Power derating curves. 3 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor section V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 40 mA 65 − − V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 0.5 mA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − 1 µA VGSth gate-source threshold voltage ID = 160 mA; VDS = 10 V 2 − 4 V gfs forward transconductance ID = 4.8 A; VDS = 10 V 2.4 3.5 − S RDSon drain-source on-state resistance ID = 4.8 A; VGS = 10 V − 0.25 0.3 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V 16 20 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 105 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 90 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 25 − pF VGS group indicator LIMITS (V) GROUP LIMITS (V) GROUP MIN. MAX. MIN. MAX. A 2.0 2.1 B 2.1 2.2 O 3.3 3.4 P 3.4 3.5 C 2.2 2.3 Q 3.5 3.6 D E 2.3 2.4 R 3.6 3.7 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 M 3.1 3.2 Z 4.4 4.5 N 3.2 3.3 2003 Sep 26 4 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 MRA524 3 handbook, halfpage MRA529 25 handbook, halfpage TC (mV/K) ID (A) 2 20 1 15 0 −1 10 −2 5 −3 −4 10−2 0 10−1 1 ID (A) 0 10 VDS = 10 V. Fig.4 4 8 12 VGS (V) 16 VDS = 10 V; Tj = 25 °C. Temperature coefficient of gate-source voltage as a function of drain current; typical values per section. Fig.5 MRA522 0.5 Drain current as a function of gate-source voltage; typical values per section. MRA525 400 handbook, halfpage handbook, halfpage RDSon (Ω) C (pF) 0.4 300 0.3 200 Cos 0.2 Cis 100 0.1 0 0 40 80 Tj (oC) 0 120 0 10 20 VDS (V) 30 ID = 4.8 A; VGS = 10 V. Fig.6 Drain-source on-state resistance as a function of junction temperature; typical values per section. 2003 Sep 26 Fig.7 5 Input and output capacitance as functions of drain-source voltage; typical values per section. Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 MRA521 100 Crs (pF) handbook, halfpage 80 60 40 20 0 Fig.8 0 10 20 VDS (V) 30 Feedback capacitance as a function of drain-source voltage; typical values per section. APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.15 K/W, unless otherwise specified. RF performance in a common source, class-B, push-pull test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) 500 28 2 x 160 150 >10 typ. 11 >50 typ. 55 Ruggedness in class-B operation The BLF548 is capable of withstanding a load mismatch corresponding to VSWR = 10: 1 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power. 2003 Sep 26 6 Philips Semiconductors Product specification UHF push-pull power MOS transistor MRA527 20 Gp (dB) handbook, halfpage BLF548 handbook, halfpage ηD (%) 80 16 Gp 12 PL (W) 160 120 60 ηD 8 80 40 4 40 20 0 0 0 50 100 0 200 150 MRA531 200 100 0 10 20 PIN (W) 30 PL (W) Class-B operation; VDS = 28 V; IDQ = 2 × 160 mA; f = 500 MHz; ZL = 1.1 + j0.6 Ω (per section). Class-B operation; VDS = 28 V; IDQ = 2 × 160 mA; f = 500 MHz; ZL = 1.1 + j0.6 Ω (per section). Fig.9 Fig.10 Load power as a function of input power; typical values. Power gain and efficiency as functions of load power; typical values. 2003 Sep 26 7 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 +VD C12 C13 R1 R2 Vbias ,,, ,,, L10 C7 R7 C8 C14 L12 R3 L1 50 Ω input L4 C1 L6 L8 DUT L2 C3 C4 C5 L18 C19 C21 L20 C23 L22 L23 50 Ω output C22 C18 L5 L13 C9 C6 L3 C2 L11 C20 L9 L7 L24 L14 L19 R4 C24 L15 C15 C10 L21 MBC232 C11 R8 L16 Vbias R5 L17 R6 C17 C16 +VD pagewidth f = 500 MHz. Fig.11 Test circuit for class-B operation. List of components class-B test circuit (see Fig.11) COMPONENT DESCRIPTION VALUE C1, C2 multilayer ceramic chip capacitor; note 1 22 pF C3 multilayer ceramic chip capacitor; note 1 16 pF C4 film dielectric trimmer 2 to 9 pF C5 multilayer ceramic chip capacitor; note 2 27 pF C6, C21, C22 film dielectric trimmer 2 to 18 pF C7, C10, C14, C15 multilayer ceramic chip capacitor; note 1 390 pF C8, C11, C12, C17 multilayer ceramic chip capacitor 100 nF C9 2 × 56 pF in series 2003 Sep 26 multilayer ceramic chip capacitor; note 3 8 DIMENSIONS CATALOGUE NO. 2222 809 09005 2222 809 09006 2222 852 47104 Philips Semiconductors Product specification UHF push-pull power MOS transistor COMPONENT BLF548 DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C13, C16 electrolytic capacitor 10 µF, 63 V C18 multilayer ceramic chip capacitor; note 2 18 pF C19 multilayer ceramic chip capacitor; note 2 12 pF C20 multilayer ceramic chip capacitor; note 2 8.2 pF C23, C24 multilayer ceramic chip capacitor; note 1 30 pF L1, L3, L22, L24 stripline; note 4 34.5 Ω length 66.5 mm width 4 mm L2, L23 semi-rigid cable; note 5 50 Ω length 66.5 mm width 3.6 mm L4, L5 stripline; note 4 22.3 Ω length 35 mm width 7 mm L6, L7 stripline; note 4 22.3 Ω length 10 mm width 7 mm L8, L9 stripline; note 4 22.3 Ω length 5.5 mm width 7 mm L10, L11, L16, L17 grade 3B Ferroxcube wideband RF choke L12, L15 1 turn enamelled 1.5 mm copper wire 17 nH length 5 mm int. dia. 9 mm leads 2 × 5 mm L13, L14 stripline; note 4 22.3 Ω length 15 mm width 7 mm L18, L19 stripline; note 4 22.3 Ω length 36 mm width 7 mm L20, L21 stripline; note 4 22.3 Ω length 8.5 mm width 7 mm R1, R5 0.4 W metal film resistor 24.7 kΩ R2, R6 10 turn potentiometer 5 kΩ R3, R4 0.4 W metal film resistor 10.5 kΩ 2322 151 71053 R7, R8 1 W metal film resistor 10 Ω 2322 151 51009 2222 030 38109 4312 020 36642 2322 151 72473 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality. 3. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 4. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (εr = 2.2), thickness 0.79 mm. 5. Cables L2 and L23 are soldered to striplines L1 and L22 respectively. 2003 Sep 26 9 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 V DS R2 handbook, full pagewidth L10 R7 L1/L2 C8 C7 C14 R3 C1 L4 C3 C4 C2 L5 C13 L11 L22/L23 C12 L12 L6 C5 C6 C9 L7 L13 C18 C19 L9 L14 L8 C20 C21 C23 L20 L18 C22 L19 L21 C24 L15 R4 C10 C15 L3 C11 L16 R8 C17 L24 C16 L17 V DS R6 MBC231 - 1 200 mm handbook, full pagewidth strap strap strap rivets strap rivets 70 mm strap strap strap strap MBC230 The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as a ground plane. Connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets. Fig.12 Component layout for 500 MHz class-B test circuit. 2003 Sep 26 10 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 MRA528 1 MRA530 6 ZL (Ω) 5 handbook, halfpage handbook, halfpage Zi (Ω) ri 0 4 xi −1 RL 3 −2 2 XL −3 1 −4 50 150 250 350 0 50 450 550 f (MHz) 150 250 350 450 550 f (MHz) Class-B operation; VDS = 28 V; IDQ = 160 mA (per section); PL = 150 W (total device). Class-B operation; VDS = 28 V; IDQ = 160 mA (per section); PL = 150 W (total device). Fig.13 Input impedance as a function of frequency (series components); typical values per section. Fig.14 Load impedance as a function of frequency (series components); typical values per section. MRA526 30 p (dB) 25 handbook, G halfpage 20 15 handbook, halfpage 10 Zi ZL 5 MBA379 0 50 150 250 350 450 550 f (MHz) Class-B operation; VDS = 28 V; IDQ = 160 mA (per section); PL = 150 W (total device). Fig.16 Power gain as a function of frequency; typical values per section. Fig.15 Definition of MOS impedance. 2003 Sep 26 11 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 BLF548 scattering parameters VDS = 28 V; ID = 40 mA; note 1 s11 f (MHz) s21 s12 s22 |s11| ∠Φ |s21| ∠Φ |s12| ∠Φ |s22| ∠Φ 5 0.99 −14.0 13.60 171.0 0.02 81.0 0.89 −12.8 10 0.98 −27.6 13.20 162.0 0.04 72.4 0.87 −25.3 20 0.93 −52.0 11.90 146.0 0.07 57.1 0.82 −48.0 30 0.88 −72.0 10.30 134.0 0.09 44.8 0.77 −66.6 40 0.84 −87.7 8.93 124.0 0.10 35.2 0.72 −81.3 50 0.81 −100.0 7.75 116.0 0.11 27.7 0.68 −93.0 60 0.79 −110.0 6.78 110.0 0.12 21.6 0.66 −102.0 70 0.77 −118.0 6.00 104.0 0.12 16.7 0.64 −109.0 80 0.76 −124.0 5.36 99.8 0.12 12.5 0.63 −115.0 90 0.75 −129.0 4.82 95.9 0.12 8.9 0.62 −120.0 100 0.75 −133.0 4.37 92.3 0.13 5.7 0.61 −124.0 125 0.74 −141.0 3.53 84.7 0.13 −1.1 0.61 −131.0 150 0.74 −147.0 2.94 78.3 0.13 −6.6 0.61 −137.0 175 0.74 −151.0 2.50 72.6 0.12 −11.5 0.62 −140.0 200 0.75 −154.0 2.16 67.5 0.12 −15.8 0.64 −143.0 250 0.77 −159.0 1.67 58.4 0.12 −23.3 0.67 −148.0 300 0.78 −163.0 1.33 50.4 0.11 −29.7 0.70 −151.0 350 0.80 −167.0 1.09 43.1 0.10 −35.3 0.73 −154.0 400 0.82 −169.0 0.91 36.6 0.10 −40.3 0.75 −157.0 450 0.84 −172.0 0.77 30.6 0.09 −44.7 0.78 −160.0 500 0.85 −175.0 0.66 25.1 0.08 −48.6 0.80 −162.0 600 0.89 −179.0 0.50 15.6 0.07 −55.2 0.84 −167.0 700 0.90 177.0 0.39 7.5 0.06 −60.4 0.88 −170.0 800 0.92 173.0 0.32 0.6 0.05 −64.3 0.90 −174.0 900 0.93 169.0 0.26 −5.4 0.04 −67.3 0.92 −177.0 1000 0.94 166.0 0.22 −10.8 0.04 −69.2 0.93 −179.0 Note 1. For more extensive s-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast 2003 Sep 26 12 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads SOT262A2 D A F D1 U1 B q C w2 M C M H1 1 H c 2 p U2 E1 E 5 A 3 w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 5.39 4.62 5.85 5.58 0.16 0.10 inches D D1 e E E1 22.17 21.98 10.27 10.29 11.05 21.46 21.71 10.05 10.03 F H 1.78 1.52 H1 21.08 17.02 19.56 16.51 p Q q U1 U2 w1 w2 w3 3.28 3.02 2.47 2.20 27.94 34.17 33.90 9.91 9.65 0.25 0.51 0.25 0.212 0.230 0.006 0.873 0.865 0.404 0.405 0.070 0.830 0.670 0.129 0.097 1.345 0.390 1.100 0.010 0.020 0.010 0.435 0.182 0.220 0.004 0.845 0.855 0.396 0.396 0.060 0.770 0.650 0.119 0.087 1.335 0.380 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-03-29 SOT262A2 2003 Sep 26 EUROPEAN PROJECTION 13 Philips Semiconductors Product specification UHF push-pull power MOS transistor BLF548 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Sep 26 14 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613524/04/pp15 Date of release: 2003 Sep 26 Document order number: 9397 750 11592