PHILIPS BLF1820-70

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF1820-70
UHF power LDMOS transistor
Product specification
Supersedes data of 2001 Feb 12
2003 Feb 10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-70
PINNING
FEATURES
• Typical 2-tone performance at a supply voltage of 26 V
and IDQ of 500 mA:
PIN
– Output power = 65 W (PEP)
– Gain = 12 dB
DESCRIPTION
1
drain
2
gate
3
source, connected to flange
– Efficiency = 32%
– dim = −26 dBc
• Easy power control
• Excellent ruggedness
• High power gain
handbook, halfpage
1
• Excellent thermal stability
• Designed for broadband operation (1800 to 2000 MHz)
• Internally matched for ease of use.
2
Top view
3
MBK394
APPLICATIONS
• RF power amplifiers for GSM, EDGE and CDMA base
stations and multicarrier applications in the
1800 to 2000 MHz frequency range.
Fig.1 Simplified outline SOT502A.
DESCRIPTION
70 W LDMOS power transistor for base station
applications at frequencies from 1800 to 2000 MHz.
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
2-tone, class-AB
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
26
65 (PEP)
>11
>30
≤−25
f1 = 2000; f2 = 2000.1
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 10
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-70
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
65
V
VGS
gate-source voltage
−
±15
V
ID
DC drain current
−
9
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-h
PARAMETER
thermal resistance from junction to
heatsink
CONDITIONS
Th = 25 °C, note 1
VALUE
UNIT
1.15
K/W
Note
1. Determined under specified RF operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 1.4 mA
65
−
−
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID = 140 mA
4.4
−
5.5
V
IDSS
drain-source leakage current
VGS = 0; VDS = 26 V
−
−
10
µA
IDSX
on-state drain current
VGS = VGSth + 9 V; VDS = 10 V
18
−
−
A
IGSS
gate leakage current
VGS = ±15 V; VDS = 0
−
−
25
nA
gfs
forward transconductance
VDS = 10 V; ID = 5 A
−
4.2
−
S
RDSon
drain-source on-state resistance
VGS = VGSth + 9 V; ID = 5 A
−
0.15
−
Ω
Crss
feedback capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
3.4
−
pF
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-h = 1.15 K/W, unless otherwise specified.
MODE OF OPERATION
2-tone, class-AB
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
f1 = 2000; f2 = 2000.1
26
500
65 (PEP)
>11
>30
≤−25
Ruggedness in class-AB operation
The BLF1820-70 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 26 V; IDQ = 500 mA; PL = 65 W; f = 2000 MHz.
2003 Feb 10
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-70
MLD526
15
Gp
Gp
handbook, halfpage
dim
(dBc)
ηD
(%)
(dB)
MLD527
0
60
handbook, halfpage
−20
10
40
d3
−40
ηD
d5
5
20
d7
−60
0
0
20
−80
0
60
80
PL (PEP) (W)
40
0
40
20
f1 = 2000 MHz; f2 = 2000.1 MHz; VDS = 26 V;
IDQ = 500 mA; Th ≤ 25 °C.
f1 = 2000 MHz; f2 = 2000.1 MHz; VDS = 26 V;
IDQ = 500 mA; Th ≤ 25 °C.
Fig.2
Fig.3
Power gain and drain efficiency as a
function of peak envelope load power;
typical values.
MLD528
15
Gp
(dB)
(1)
MLD529
handbook, halfpage
d3
(dBc)
ηD
(%)
(3)
Intermodulation distortion as a function of
peak envelope load power; typical values.
0
60
handbook, halfpage
80
60
PL (PEP) (W)
−20
(2)
10
40
(1)
(1)
(3)
(2)
−40
(2)
(3)
5
20
−60
0
0
20
40
60
PL (W)
−80
0
80
0
20
40
80
60
PL (PEP) (W)
f1 = 2000 MHz; f2 = 2000.1 MHz; VDS = 26 V; Th ≤ 25 °C.
(1) IDQ = 400 mA.
(2) IDQ = 500 mA.
(3) IDQ = 600 mA.
VDS = 26 V; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz.
(1) IDQ = 400 mA.
(2) IDQ = 500 mA.
(3) IDQ = 600 mA.
Fig.4
Fig.5
Power gain and drain efficiency as a
function of the peak envelope load power;
typical values.
2003 Feb 10
4
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-70
MLD530
6
zi
(Ω)
4
MLD531
4
handbook, halfpage
handbook, halfpage
RL
ZL
(Ω)
2
xi
2
0
ri
0
−2
−2
−4
ZL
−4
1.7
1.8
1.9
2
2.1
−6
1.7
2.2
f (GHz)
1.8
1.9
2
2.1
VDS = 26 V; IDQ = 500 mA; PL = 65 W; Th ≤ 25 °C.
VDS = 26 V; IDQ = 500 mA; PL = 65 W; Th ≤ 25 °C.
Fig.6
Fig.7
Input impedance as a function of frequency
(series components); typical values.
2.2
f (GHz)
Load impedance as a function of frequency
(series components); typical values.
F1
handbook, full pagewidth
C15
C6
R1
C13
R2
Vgate
Vdd
C11
C5
L4
C14
C12
C16
C17
L13
C4
C10
L10
L6
L11
L2
L15
L17
L8
input
50 Ω
C9
C3
L20
L1
L3 L5
C2
L7
L12
L9
L14
L16
C7
C1
L18
L19
output
50 Ω
C8
MGS954
Fig.8 Class-AB test circuit at f = 2 GHz.
2003 Feb 10
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-70
List of components (see Figs. 8 and 9)
COMPONENT
DESCRIPTION
VALUE
C1, C2, C7 and C8 Tekelec variable capacitor; type 37271
DIMENSIONS
CATALOGUE NO.
0.6 to 4.5 pF
C3, C9
multilayer ceramic chip capacitor; note 1 12 pF
C4, C10
multilayer ceramic chip capacitor; note 2 12 pF
C5, C12 and C16
electrolytic capacitor
C6, C11 and C15
multilayer ceramic chip capacitor; note 1 1 nF
C13 and C17
electrolytic capacitor
100 µF; 63 V
2222 037 58101
C14
multilayer ceramic chip capacitor
100 nF
2222 581 16641
F1
Ferroxcube chip-bead 8DS3/3/8/9-4S2
4.5 µF; 50 V
4330 030 36301
50 Ω
L1
2.9 × 2.4 mm
L2
10.8 Ω
4 × 16.3 mm
L3
50 Ω
3.7 × 2.4 mm
L4
6Ω
2 × 30.8 mm
L5
50 Ω
3.6 × 2.4 mm
L6
9Ω
3 × 19.9 mm
L7
50 Ω
7.8 × 2.4 mm
L8
18.5 Ω
4 × 8.8 mm
24.4 Ω
5 × 6.3 mm
5.1 Ω
7 × 37 mm
L12
25.4 Ω
10.1 × 6 mm
L13
5.7 Ω
2.4 × 32.8 mm
L14
25.4 Ω
6.4 × 6 mm
L15
10 Ω
3.5 × 17.8 mm
L9
L10 and L11
stripline; note 3
L16
50 Ω
10.8 × 2.4 mm
L17
11.8 Ω
3 × 14.9 mm
L18
50 Ω
2.3 × 2.4 mm
L19
50 Ω
3 × 2.4 mm
L20
50 Ω
5.5 × 2.4 mm
R1 and R2
10 Ω, 0.6 W
metal film resistor
2322 156 11009
Notes
1. American Technical Ceramics type 100B or capacitor of same quality.
2. American Technical Ceramics type 100A or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.79 mm.
2003 Feb 10
6
Philips Semiconductors
Product specification
UHF power LDMOS transistor
handbook, full pagewidth
BLF1820-70
50
50
95
INPUT
OUTPUT
PH990118
PH990117
VDD
VGS
C6
R2
C17
C16
C5
R1
C11
F1
C13
C15 C14
C10
C4
C12
C9
C3
C2
C1
C7
C8
INPUT
OUTPUT
PH990118
PH990117
MGU319
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.79 mm.
The other side is unetched and serves as a ground plane.
Fig.9 Component layout for 2 GHz class-AB test circuit.
2003 Feb 10
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-70
PACKAGE OUTLINE
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D1
U1
B
q
c
C
1
H
L
E1
p
U2
E
w1 M A M B M
A
2
w2 M C M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
D
E
E1
F
H
L
p
Q
q
U1
U2
w1
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
3.38
3.12
1.70
1.45
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.067
1.100
0.057
1.345
1.335
0.390
0.380
0.01
0.02
D1
0.045 0.785
0.035 0.745
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
03-01-10
SOT502A
2003 Feb 10
0.210 0.133
0.170 0.123
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-70
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.the
2003 Feb 10
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-70
NOTES
2003 Feb 10
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-70
NOTES
2003 Feb 10
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA75
© Koninklijke Philips Electronics N.V. 2003
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without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Printed in The Netherlands
613524/02/pp12
Date of release: 2003
Feb 10
Document order number:
9397 750 10915