DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF542 PIN CONFIGURATION • High power gain • Easy power control halfpage • Gold metallization • Good thermal stability • Withstands full load mismatch 1 2 • Designed for broadband operation. 3 4 5 6 d g MBB072 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. Top view s MBA931 - 1 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. PINNING - SOT171 PIN WARNING DESCRIPTION 1 source Product and environmental safety - toxic materials 2 source 3 gate 4 drain 5 source 6 source This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B October 1992 f (MHz) VDS (V) PL (W) GP (dB) ηD (%) 500 28 5 > 13 > 50 2 Philips Semiconductors Product specification UHF power MOS transistor BLF542 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V ±VGS gate-source voltage − 20 V ID DC drain current − 1.5 A Ptot total power dissipation − 20 W Tstg storage temperature Tmb = 25 °C −65 150 °C Tj junction temperature − 200 °C THERMAL RESISTANCE SYMBOL PARAMETER THERMAL RESISTANCE Rth j-mb thermal resistance from junction to mounting base 8.8 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.4 K/W MRA735 10 MRA734 35 tot (W) 30 handbook, halfpage handbook, P halfpage ID (A) 25 1 (2) (1) (2) 20 (1) 15 10−1 10 5 10−2 1 10 VDS (V) 0 10 102 (1) Current in this area may be limited by RDS(on). 50 70 90 110 130 Th (oC) (1) Continuous operation. (2) Short time operation during mismatch. (2) Tmb = 25 °C. Fig.2 DC SOAR. October 1992 30 Fig.3 Power derating curves. 3 Philips Semiconductors Product specification UHF power MOS transistor BLF542 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS V(BR)DSS drain-source breakdown voltage MIN. TYP. MAX. UNIT ID = 0.1 mA; VGS = 0 65 − − V IDSS drain-source leakage current VGS = 0; VDS = 28 V − − 10 µA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 10 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance ID = 0.3 A; VDS = 10 V 160 240 − mS RDS(on) drain-source on-resistance ID = 0.3 A; VGS = 15 V − 3.3 5 Ω IDSX on-state drain current VGS = 15 V; VDS = 10 V − 1.4 − A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 14 − pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 9.4 − pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz − 1.7 − pF MBB777 4 MBB759 1.5 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) 2 1 0 0.5 –2 0 –4 0 100 200 ID (mA) 0 300 5 VDS = 10 V. VDS = 10 V; Tj = 25 °C. Fig.4 Fig.5 Temperature coefficient of gate-source voltage as a function of drain current, typical values. October 1992 4 10 VGS (V) 15 Drain current as a function of gate-source voltage, typical values. Philips Semiconductors Product specification UHF power MOS transistor BLF542 MBB778 6 MBB776 30 handbook, halfpage handbook, halfpage RDS (on) (Ω) C (pF) 4 20 Cis Cos 2 10 0 0 0 50 100 150 Tj (oC) 0 10 ID = 0.3 A; VGS = 15 V VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-resistance as a function of junction temperature, typical values. MBB775 6 handbook, halfpage Crs (pF) 4 2 0 0 10 20 VDS (V) 30 VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. October 1992 5 20 VDS (V) 30 Input and output capacitance as functions of drain-source voltage, typical values. Philips Semiconductors Product specification UHF power MOS transistor BLF542 APPLICATION INFORMATION FOR CLASS-B OPERATION Tmb = 25 °C unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) VDS (V) IDQ (mA) PL (W) GP (dB) ηD (%) 500 28 50 5 > 13 typ. 16.5 > 50 typ. 59 Ruggedness in class-B operation The BLF542 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VDS = 28 V; f = 500 MHz at rated output power. MRA969 20 handbook, halfpage 80 Gp (dB) PL (W) (%) 15 8 60 η MRA970 10 handbook, halfpage η Gp 6 10 40 4 20 5 2 0 0 2 4 6 0 10 8 0 0 PL (W) 0.2 0.4 0.6 0.8 PIN (W) Class-B operation; VDS = 28 V; IDQ = 10 mA; ZL = 9.7 + j24.5 Ω; f = 500 MHz. Class-B operation; VDS = 28 V; IDQ = 10 mA; ZL = 9.7 + j24.5 Ω; f = 500 MHz. Fig.9 Fig.10 Load power as a function of input power, typical values. Power gain and efficiency as functions of load power, typical values. October 1992 6 Philips Semiconductors Product specification ,, UHF power MOS transistor handbook, full pagewidth C9 C3 input 50 Ω C1 L1 L2 C2 L3 DUT L5 L6 C11 L7 L4 C4 L8 R1 C10 C13 output 50 Ω C12 C6 MBB760 C5 R4 L9 C7 R2 R3 C8 VDD = + 28 V f = 500 MHz. Fig.11 Test circuit for class-B operation. October 1992 7 BLF542 Philips Semiconductors Product specification UHF power MOS transistor BLF542 List of components (see test circuit) COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C5, C13 multilayer ceramic chip capacitor (note 1) 390 pF C2, C4, C10, C12 film dielectric trimmer 2 to 18 pF C3, C9 multilayer ceramic chip capacitor (note 1) 39 pF C6 multilayer ceramic chip capacitor (note 2) 220 pF C7 multilayer ceramic chip capacitor 100 nF 2222 852 47104 2222 030 28109 222 809 05217 C8 electrolytic capacitor 63 V, 10 µF C11 multilayer ceramic chip capacitor (note 1) 10 pF L1 stripline (note 3) 50 Ω 11 mm × 2.5 mm L2 stripline (note 3) 50 Ω 37 mm × 2.5 mm L3 stripline (note 3) 50 Ω 13 mm × 2.5 mm L4, L5 stripline (note 3) 42 Ω 3 mm × 3 mm L6 stripline (note 3) 50 Ω 39 mm × 2.5 mm L7 stripline (note 3) 50 Ω 22 mm × 2.5 mm L8 8 turns 0.8 mm enamelled copper wire 250 nH length 9 mm int. dia. 6 mm leads 2 × 5 mm L9 grade 3B Ferroxcube wideband RF choke R1 metal film resistor 10 kΩ, 0.4 W R2 10 turn potentiometer 50 kΩ 4312 020 36640 2322 151 71003 R3 metal film resistor 205 kΩ, 0.4 W 2322 151 72054 R4 metal film resistor 10 Ω, 0.4 W 2322 151 71009 Notes 1. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board with PTFE fibre-glass dielectric (εr = 2.2); thickness 1⁄32 inch. October 1992 8 Philips Semiconductors Product specification UHF power MOS transistor BLF542 handbook, full pagewidth VD VG L9 C8 R4 C5 C6 C3 C1 L1 C2 L8 R1 L3 L2 C7 L5 L4 C9 C10 C4 C11 L7 L6 C13 C12 MBB762 150 mm handbook, full pagewidth rivet (12x) strap (8x) 70 mm mounting screws (12x) MBB761 The components are mounted on one side of a copper-clad printed circuit board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of fixing screws, hollow rivets and copper foil straps, as shown. Fig.12 Component layout for 500 MHz test circuit. October 1992 9 Philips Semiconductors Product specification UHF power MOS transistor BLF542 MRA732 10 MRA733 70 handbook, halfpage handbook, Z halfpage Zi (Ω) L (Ω) ri 60 0 50 −10 40 xi −20 XL 30 −30 RL 20 −40 10 −50 100 200 300 400 0 100 500 200 300 400 f (MHz) f (MHz) 500 Class-B operation; VDS = 28 V; IDQ = 10 mA; PL = 5 W. Class-B operation; VDS = 28 V; IDQ = 10 mA; PL = 5 W. Fig.13 Input impedance as a function of frequency (series components), typical values. Fig.14 Load impedance as a function of frequency (series components), typical values. MRA971 35 handbook, gain halfpage (dB) 30 25 20 handbook, halfpage 15 10 Zi ZL MBA379 5 0 100 200 300 400 500 f MHz) Class-B operation; VDS = 28 V; IDQ = 10 mA; PL = 5 W. Fig.15 Definition of MOS impedance. October 1992 Fig.16 Power gain as a function of frequency, typical values. 10 Philips Semiconductors Product specification UHF power MOS transistor BLF542 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT171A D A F D1 U1 B q C w2 M C H1 c b1 2 H 4 6 E1 U2 1 A 3 5 E w1 M A B p Q w3 M b e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 c D D1 E E1 e mm 6.81 6.07 2.15 1.85 3.20 2.89 0.16 0.07 9.25 9.04 9.30 8.99 5.95 5.74 6.00 5.70 3.58 inches w1 w2 w3 0.51 1.02 0.26 0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224 0.04 0.01 OUTLINE VERSION F JEDEC EIAJ SOT171A October 1992 H1 3.05 11.31 9.27 2.54 10.54 9.01 REFERENCES IEC H p 3.43 3.17 Q q U1 U2 4.32 24.90 6.00 18.42 4.11 24.63 5.70 EUROPEAN PROJECTION ISSUE DATE 97-06-28 11 Philips Semiconductors Product specification UHF power MOS transistor BLF542 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1992 12