DISCRETE SEMICONDUCTORS DATA SHEET BLF276 VHF power MOS transistor Product specification December 1997 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF276 PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor delivers an output power of 100 W in class-B operation at a supply voltage of 50 V. page 1 2 3 4 d g MBB072 5 Top view MSA308 Fig.1 Simplified outline and symbol. The transistor is encapsulated in a 6-lead, SOT119 pill-package envelope, with a ceramic cap. PINNING - SOT119D3 PIN s 6 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. DESCRIPTION WARNING 1 source 2 source Product and environmental safety - toxic materials 3 gate 4 drain 5 source 6 source This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-B December 1997 f (MHz) VDS (V) PL (W) GP (dB) ηD (%) 225 50 100 ≥ 13 ≥ 50 108 50 100 ≥ 18 ≥ 60 2 Philips Semiconductors Product specification VHF power MOS transistor BLF276 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 110 V ±VGS gate-source voltage − 20 V ID DC drain current − 9 A Ptot total power dissipation − 150 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C up to Tmb = 25 °C THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS thermal resistance from junction to mounting base Rth j-mb Ptot = 150 W; Tmb = 25 °C 240 handbook, halfpage handbook, halfpage ID (A) max. 1.17 K/W MRA943 MRA936 10 THERMAL RESISTANCE Ptot (W) 200 (1) (2) (2) 160 (1) 120 1 80 40 10−1 0 1 10 102 VDS (V) 103 0 (1) Current is this area may be limited by RDS(on). (2) Tmb = 25 °C. 40 60 80 100 120 140 Tmb (°C) (1) Continuous operation. (2) Short-time operation during mismatch. Fig.2 DC SOAR. December 1997 20 Fig.3 Power/temperature derating curves. 3 Philips Semiconductors Product specification VHF power MOS transistor BLF276 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VGS = 0; ID = 30 mA 110 − − V V(BR)DSS drain-source breakdown voltage IDSS drain-source leakage current VGS = 0; VDS = 50 V − − 1 mA IGSS gate-source leakage current ±VGS = 20 V; VDS = 0 − − 1 µA VGS(th) gate-source threshold voltage ID = 50 mA; VDS = 10 V 2 − 4.5 V gfs forward transconductance ID = 3 A; VDS = 10 V 2.7 − − S RDS(on) drain-source on-state resistance ID = 3 A; VGS = 10 V − 0.4 0.6 Ω IDSX on-state drain current VGS = 10 V; VDS = 10 V 8 12 − A Cis input capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 240 − pF Cos output capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 95 − pF Crs feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz − 7 − pF MRA945 MRA940 handbook,16 halfpage 0 handbook, halfpage TC (mV/K) ID (A) −1 12 −2 8 −3 4 −4 −5 10−2 0 10−1 1 ID (A) 0 10 2 VDS = 10 V. VDS = 10 V. Fig.4 Fig.5 Temperature coefficient of gate-source voltage as a function of drain current, typical values. December 1997 4 4 6 8 10 12 14 VGS (V) Drain current as a function of gate-source voltage, typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF276 MRA944 1 MRA934 handbook,600 halfpage handbook, halfpage C (pF) RDS (on) (Ω) 0.8 500 400 0.6 300 Cis 0.4 200 0.2 Cos 100 0 0 0 20 40 60 80 100 0 120 140 Tj (°C) 10 ID = 3 A; VGS = 10 V. VGS = 0; f = 1 MHz. Fig.6 Fig.7 Drain-source on-state resistance as a function of junction temperature, typical values. MRA935 handbook, 50 halfpage Crs (pF) 40 30 20 10 0 0 10 20 30 40 50 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. December 1997 5 20 30 40 50 VDS (V) Input and output capacitance as functions of drain-source voltage, typical values. Philips Semiconductors Product specification VHF power MOS transistor BLF276 APPLICATION INFORMATION FOR CLASS-B OPERATION Tmb = 25 °C unless otherwise specified. RF performance in CW operation in a common source class-B circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (mA) PL (W) GP (dB) ηD (%) 225 50 50 100 ≥ 13 typ. 15 ≥ 50 typ. 57 108 50 50 100 ≥ 18 typ. 22 ≥ 60 typ. 75 CW, class-B Ruggedness in class-B operation The BLF276 is capable of withstanding a load mismatch corresponding to VSWR = 8 through all phases under the following conditions: VDS = 50 V; f = 225 MHz; Tmb = 25 °C at rated load power. MRA937 20 halfpage handbook, 100 MRA942 140 handbook, P halfpage η gain (dB) L (W) 120 (%) gain 80 16 100 12 60 η 80 60 40 8 40 20 20 4 0 0 0 20 40 60 80 100 0 0 120 140 PL (W) 2 4 6 PIN (W) 8 Class-B operation; VDS = 50 V; IDQ = 50 mA; f = 225 MHz. Class-B operation; VDS = 50 V; IDQ = 50 mA; f = 225 MHz. Fig.9 Fig.10 Load power as a function of input power, typical values. Power gain and efficiency as functions of load power, typical values. December 1997 6 Philips Semiconductors Product specification VHF power MOS transistor BLF276 handbook, full pagewidth C15 C17 L14 C2 50 Ω input C4 C1 C6 DUT L7 L4 L11 L13 L12 L1 L2 C3 L3 L5 C5 L6 L9 L10 L8 L15 C16 L16 L18 L19 L20 C18 C10 MEA808 C7 R4 C11 C8 L21 C12 C9 C13 R2 R3 C14 +VDD f = 225 MHz. Fig.11 Test circuit for class-B operation. December 1997 50 Ω output C19 L17 7 Philips Semiconductors Product specification VHF power MOS transistor BLF276 List of components (class-B test circuit) COMPONENT DESCRIPTION VALUE C1, C9, C19 multilayer ceramic chip capacitor (note 1) 680 pF, 500 V C2 multilayer ceramic chip capacitor (note 1) 15 pF, 500 V DIMENSIONS CATALOGUE NO. C3, C5, C16, C18 film dielectric trimmer 4 to 40 pF C4 multilayer ceramic chip capacitor (note 1) 13 pF, 500 V C6, C7 multilayer ceramic chip capacitor (note 1) 62 pF, 500 V C8, C14 multilayer ceramic chip capacitor 100 nF C10 multilayer ceramic chip capacitor (note 1) 100 pF, 500 V C11 foil capacitor 100 nF, 100 V C12 multilayer ceramic chip capacitor 10 nF 2222 852 47103 C13 electrolytic capacitor 10 µF, 63 V 2222 030 38109 C15 multilayer ceramic chip capacitor (note 2) 2 × 33 pF in parallel, 500 V C17 multilayer ceramic chip capacitor (note 1) 18 pF, 500 V L1 stripline (note 3) 49 Ω length 8 mm width 4 mm L2 stripline (note 3) 49 Ω length 12 mm width 4 mm L3 stripline (note 3) 49 Ω length 7.5 mm width 4 mm L4 2 turns enamelled 1.5 mm copper wire 18 nH length 4.2 mm int. dia. 4 mm leads 2 × 1 mm L5 stripline (note 3) 49 Ω length 15.5 mm width 4 mm L6 stripline (note 3) 49 Ω length 5 mm width 4 mm L7 2 turns enamelled 1.5 mm copper wire 16 nH length 3.3 mm int. dia. 3 mm leads 2 × 4 mm L8 stripline (note 3) 31 Ω length 6 mm width 6 mm L9 stripline (note 3) 31 Ω length 9.5 mm width 6 mm L10, L11 stripline (note 3) 31 Ω length 10 mm width 6 mm December 1997 8 2222 809 08002 2222 852 47104 2222 368 21204 Philips Semiconductors Product specification VHF power MOS transistor COMPONENT BLF276 DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. L12 3 turns enamelled 1.5 mm copper wire 50 nH length 4.8 mm int. dia. 5 mm leads 2 × 4 mm L13 stripline (note 3) 31 Ω length 5 mm width 6 mm L14 1 turn enamelled 1.5 mm copper wire L15 stripline (note 3) 36 Ω length 16.5 mm width 5 mm L16 stripline (note 3) 36 Ω length 8 mm width 5 mm L17 2 turns enamelled 1.5 mm copper wire 17 nH length 4.7 mm int. dia. 4 mm leads 2 × 2 mm L18 stripline (note 3) 36 Ω length 17.5 mm width 5 mm L19, L20 stripline (note 3) 36 Ω length 8.5 mm width 5 mm L21 grade 3B Ferroxcube wide-band RF choke R1 1 W metal film resistor 9.09 Ω R2 10 turns potentiometer 50 kΩ R3 0.4 W metal film resistor 400 kΩ 2322 151 74024 R4 0.4 W metal film resistor 10 Ω 2322 151 11009 int. dia. 2.8 mm leads 2 × 1 mm 4312 020 36642 2222 153 59098 Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 175B or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with epoxy fibre-glass PTFE dielectric (εr = 4.5); thickness 1⁄16 inch. December 1997 9 Philips Semiconductors Product specification VHF power MOS transistor BLF276 R2 handbook, full pagewidth R3 L20 C2 C1 L1 L2 L3 C4 L4 L6 L7 L5 C3 C10 C8 C9 C6 R1 R4 L8 C13 C14 C11 L12 L15 C15 L17 L9 C5 C12 L14 L13 C7 L10 L11 C15 C16 C17 C19 L18 L19 L20 L16 C18 MEA810 191 mm handbook, full pagewidth mounting screws (8x) strap rivets (18x) strap 70 mm strap strap MEA809 The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets between the upper and lower sheets. Fig.12 Component layout for 225 MHz class-B test circuit. December 1997 10 Philips Semiconductors Product specification VHF power MOS transistor BLF276 MRA939 MRA941 handbook, 16 halfpage 8 handbook, halfpage Zi (Ω) ZL (Ω) 6 12 4 RL ri 2 8 0 XL xi −2 4 −4 −6 0 50 100 0 200 250 f (MHz) 150 0 50 100 150 200 250 f (MHz) Class-B operation; VDS = 50 V; IDQ = 50 mA; RGS = 9.1 Ω; PL = 100 W. Class-B operation; VDS = 50 V; IDQ = 50 mA; RGS = 9.1 Ω; PL = 100 W. Fig.13 Input impedance as a function of frequency (series components), typical values. Fig.14 Load impedance as a function of frequency (series components), typical values. MRA938 handbook, 30 halfpage gain (dB) 20 handbook, halfpage 10 Zi ZL MBA379 0 0 50 100 150 200 250 f (MHz) Class-B operation; VDS = 50 V; IDQ = 50 mA; RGS = 9.1 Ω; PL = 100 W. Fig.15 Definition of MOS impedance. December 1997 Fig.16 Power gain as a function of frequency, typical values. 11 Philips Semiconductors Product specification VHF power MOS transistor BLF276 PACKAGE OUTLINE Flangeless ceramic package; 6 leads SOT119D D A A D1 w2 M A H1 b2 c 2 4 6 1 3 5 H b1 Q w3 M b e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 b2 c mm 4.53 3.70 5.59 5.33 5.34 5.08 4.07 3.81 0.16 0.10 D1 e Q w2 w3 1.71 1.44 0.51 0.26 inches 0.178 0.220 0.210 0.160 0.006 0.506 0.505 0.255 0.865 0.730 0.067 0.146 0.210 0.200 0.150 0.004 0.496 0.495 0.835 0.720 0.057 0.02 0.01 OUTLINE VERSION D 12.86 12.83 12.59 12.57 6.48 H H1 21.97 18.55 21.20 18.28 REFERENCES IEC JEDEC EIAJ SOT119D December 1997 EUROPEAN PROJECTION ISSUE DATE 97-06-28 12 Philips Semiconductors Product specification VHF power MOS transistor BLF276 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 1997 13