BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common source class-AB test circuit; IDq = 150 mA; typical values. Mode of operation Conditions VDS (V) PL (W) Gp (dB) ηD (%) tr (ns) tf (ns) Pulsed class-AB: 1030 MHz to 1090 MHz tp = 50 µs; δ = 2 % 36 200 15 50 35 6 tp = 128 µs; δ = 2 % 36 250 14 50 35 6 tp = 340 µs; δ = 1 % 36 250 14 50 35 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features ■ Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a supply voltage of 36 V and an IDq of 150 mA: ◆ Load power ≥ 200 W ◆ Gain ≥ 13 dB ◆ Efficiency ≥ 45 % ◆ Rise time ≤ 50 ns ◆ Fall time ≤ 50 ns ■ High power gain ■ Easy power control ■ Excellent ruggedness ■ Source on mounting flange eliminates DC isolators, reducing common mode inductance 1.3 Applications ■ Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range. BLA1011-200; BLA1011S-200 Philips Semiconductors Avionics LDMOS transistor 2. Pinning information Table 2: Pinning Pin Description Simplified outline Symbol BLA1011-200 (SOT502A) 1 drain 2 gate 3 source 1 1 3 [1] 2 2 3 sym039 BLA1011S-200 (SOT502B) 1 drain 2 gate 3 1 1 3 [1] source 2 2 3 sym039 [1] Connected to flange 3. Ordering information Table 3: Ordering information Type number Package Name Description Version BLA1011-200 - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A BLA1011S-200 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 75 V VGS gate-source voltage - ±22 V Ptot total power dissipation - 700 W Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C Th ≤ 25 °C; tp = 50 µs; δ = 2 % 9397 750 14634 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 26 October 2005 2 of 13 BLA1011-200; BLA1011S-200 Philips Semiconductors Avionics LDMOS transistor 5. Thermal characteristics Table 5: Thermal characteristics Symbol Parameter Zth(j-h) thermal impedance from junction to heatsink Th = 25 °C [1] Conditions [1] Typ Unit 0.15 K/W Thermal resistance is determined under RF operating conditions; tp = 50 µs, δ = 10 %. 6. Characteristics Table 6: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3 mA VGS(th) gate-source threshold voltage VDS = 10 V; ID = 300 mA Min Typ Max Unit 75 - - V 4 - 5 V IDSS drain leakage current VGS = 0 V; VDS = 36 V - - 1 µA IDSX drain cut-off current VGS = VGS(th) + 9 V; VDS = 10 V 45 - - A IGSS gate leakage current VGS = ±20 V; VDS = 0 V - - 1 µA gfs transfer conductance VDS = 10 V; ID = 10 A - 9 - S RDS(on) drain-source on-state resistance VGS = 9 V; ID = 10 A - 60 - mΩ 7. Application information Table 7: Application information RF performance in a common source pulsed class-AB circuit; (tp = 50 µs; δ = 2 %); f = 1030 MHz and 1090 MHz; Th = 25 °C; Zth(mb-h) = 0.15 K/W; IDq = 150 mA; unless otherwise specified. Symbol Parameter VDS drain-source voltage Conditions Min Typ Max Unit - 36 - V PL load power tp = 50 µs; δ = 2 % - 200 W Gp power gain PL = 200 W 13 - dB tp = 50 µs; δ = 2 % ηD drain efficiency 45 - tr rise time - - 50 ns tf fall time - - 50 ns % 7.1 Ruggedness in class-AB operation The BLA1011-200 and BLA1011S-200 are capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the following conditions: VDS = 36 V; f = 1030 MHz to 1090 MHz at rated load power. 9397 750 14634 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 26 October 2005 3 of 13 BLA1011-200; BLA1011S-200 Philips Semiconductors Avionics LDMOS transistor mgw033 20 Gp (dB) 80 ηD (%) Gp mgw034 250 PL (W) 200 15 60 150 10 40 ηD 100 5 20 50 0 0 50 100 150 0 200 250 PL (W) 0 0 VDS = 36 V; IDq = 150 mA; f = 1060 MHz; tp = 50 µs; δ=2% Fig 1. Power gain and drain efficiency as functions of load power; typical values mgw035 20 Gp (dB) 2 4 6 PD (W) 8 VDS = 36 V; IDq = 150 mA; f = 1060 MHz; tp = 50 µs; δ=2% Fig 2. Load power as a function of drive power; typical values mgw036 250 IDq = 1.5 A 200 16 20 Gp (dB) PL (W) 16 150 mA Gp 12 150 8 100 4 50 0 12 PL 8 4 0 0 50 100 150 200 250 PL (W) VDS = 36 V; f = 1060 MHz; tp = 50 µs; δ = 2 % Fig 3. Power gain as a function of load power; typical values 0 0 2 3 4 5 VGS (V) VDS = 36 V; IDq = 150 mA; Pi = 5.5 W; f = 1060 MHz; tp = 50 µs; δ = 2 % Fig 4. Load power and power gain as functions of gate-source voltage; typical values 9397 750 14634 Product data sheet 1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 26 October 2005 4 of 13 BLA1011-200; BLA1011S-200 Philips Semiconductors Avionics LDMOS transistor mgw037 20 Gp (dB) Zi (W) ηD (%) Gp mgw038 5 80 xi 4 15 60 ri 3 ηD 10 40 2 5 20 1 0 1020 1040 1060 1080 0 1100 f (MHz) 0 1020 VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 µs; δ=2% 1040 1060 1080 1100 f (MHz) VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 µs; δ=2% Fig 5. Power gain and drain efficiency a functions of frequency; typical values Fig 6. Input Impedance as a function of frequency (series components); typical values mgw039 4 ZL (W) 2 RL 0 XL −2 −4 1020 1040 1060 1080 1100 f (MHz) VDS = 36 V; IDq = 150 mA; PL = 200 W; tp = 50 µs; δ = 2 % Fig 7. Load impedance as a function of frequency (series components); typical values 9397 750 14634 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 26 October 2005 5 of 13 BLA1011-200; BLA1011S-200 Philips Semiconductors Avionics LDMOS transistor 8. Test information 40 40 60 C6 + C10 C5 C9 + R2 C4 C3 R1 C11 C8 L1 C7 C1 C2 mgw032 Dimensions in mm. The components are situated on one side of the copper-clad Duroid Printed-Circuit Board (PCB) with εr = 6.2 and thickness 0.64 mm. The other side is unetched and serves as a ground plane. See Table 8 for list of components. Fig 8. Component layout for 1030 MHz to 1090 MHz test circuit 9397 750 14634 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 26 October 2005 6 of 13 BLA1011-200; BLA1011S-200 Philips Semiconductors Avionics LDMOS transistor Table 8: List of components (see Figure 8) Component Description multilayer ceramic chip capacitor 39 pF C2 multilayer ceramic chip capacitor [2] 4.3 pF C3 multilayer ceramic chip capacitor [1] 11 pF multilayer ceramic chip capacitor [1] 62 pF multilayer ceramic chip capacitor [1] 100 pF C1 C4, C7 C5 Dimensions 47 µF; 20 V C6 electrolytic capacitor C8 multilayer ceramic chip capacitor [2] 20 pF C9 multilayer ceramic chip capacitor [1] 47 pF C10 multilayer ceramic chip capacitor [3] 1.2 nF 47 µF; 63V C11 electrolytic capacitor L1 Ω-shaped enamelled 1 mm copper wire R1 metal film resistor 301 Ω R2 SMD 0508 resistor 18 Ω length = 38 mm [1] American Technical Ceramics type 100A or capacitor of same quality. [2] American Technical Ceramics type 100B or capacitor of same quality. [3] American Technical Ceramics type 700 or capacitor of same quality. 9397 750 14634 Product data sheet Value [1] © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 26 October 2005 7 of 13 BLA1011-200; BLA1011S-200 Philips Semiconductors Avionics LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 9. Package outline SOT502A 9397 750 14634 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 26 October 2005 8 of 13 BLA1011-200; BLA1011S-200 Philips Semiconductors Avionics LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502B Fig 10. Package outline SOT502B 9397 750 14634 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 26 October 2005 9 of 13 BLA1011-200; BLA1011S-200 Philips Semiconductors Avionics LDMOS transistor 10. Abbreviations Table 9: Abbreviations Acronym Description IDq quiescent drain current LDMOS Laterally Diffused Metal Oxide Semiconductor RF Radio Frequency SMD Surface Mount Device VSWR Voltage Standing Wave Ratio 9397 750 14634 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 26 October 2005 10 of 13 BLA1011-200; BLA1011S-200 Philips Semiconductors Avionics LDMOS transistor 11. Revision history Table 10: Revision history Document ID Release date BLA1011-200_BLA1 20051026 011S-200_8 Modifications: Data sheet status Change notice Doc. number Supersedes Product data sheet - BLA1011-200_7 9397 750 14634 • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • SOT502B package added. BLA1011-200_7 20031111 Product specification - 9397 750 12246 BLA1011-200_6 BLA1011-200_6 20020318 Product specification - 9397 750 09414 BLA1011-200_5 BLA1011-200_5 20010515 Product specification - 9397 750 08376 BLA1011-200_4 BLA1011-200_4 20010417 Product specification - 9397 750 08139 BLA1011-200_N_3 BLA1011-200_N_3 20010302 Product specification - 9397 750 08109 BLA1011-200_N_2 BLA1011-200_N_2 20001201 Product specification - 9397 750 07638 BLA1011-200_N_1 BLA1011-200_N_1 20000906 Product specification - 9397 750 07326 - 9397 750 14634 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 26 October 2005 11 of 13 BLA1011-200; BLA1011S-200 Philips Semiconductors Avionics LDMOS transistor 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 15. Trademarks 14. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14634 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 08 — 26 October 2005 12 of 13 Philips Semiconductors BLA1011-200; BLA1011S-200 Avionics LDMOS transistor 17. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information . . . . . . . . . . . . . . . . . . . . 12 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 October 2005 Document number: 9397 750 14634 Published in The Netherlands