INTEGRATED CIRCUITS DATA SHEET CGY2021G DCS/PCS 2 W power amplifier Preliminary specification Supersedes data of 1996 Oct 15 File under Integrated Circuits, IC17 1997 Apr 03 Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G FEATURES GENERAL DESCRIPTION • Power Amplifier (PA) overall efficiency 50% (DCS) The CGY2021G is a DCS/PCS class 1 GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically designed to operate at 4.8 V battery supply. • 34 dB gain • 0 dBm input power The chip also includes a power sensor driver so that no directional coupler is required in the power control loop. • Gain control range >50 dB • Integrated power sensor driver The PA requires only a simple low-pass filter to comply with the DCS/PCS transmit spurious specification. It can be switched off and its power controlled by monitoring the actual drain voltage applied to the amplifier stages. • Low output noise floor of PA <−121 dBm/Hz in DCS/PCS RX band • Wide operating temperature range −20 to +85 °C • LQFP 48-pin package • Compatible with power ramping controller PCA5077 and GaAs PA power modulator UBA1710. APPLICATIONS • Hand-held transceivers for DCS/PCS applications (DCS: 1710 to 1785 MHz and PCS: 1850 to 1910 MHz) • 1800 MHz Time Division Multiple Access (TDMA) systems. QUICK REFERENCE DATA PARAMETER(1) SYMBOL MIN. TYP. MAX. UNIT VDD positive supply voltage − 4.5 − V IDD positive peak supply current − 1.4 − A Po(max) maximum output power − 34 − dBm Tamb operating ambient temperature −20 − +85 °C Note 1. For conditions, see Chapters “AC characteristics” and “DC characteristics”. ORDERING INFORMATION TYPE NUMBER CGY2021G 1997 Apr 03 PACKAGE NAME LQFP48 DESCRIPTION plastic low profile quad flat package; 48 leads; body 7 × 7 × 1.4 mm 2 VERSION SOT313-2 Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G BLOCK DIAGRAM VDD1 handbook, full pagewidth VDD2 29 VDD3 33 42 18 DETO/VDD5 SENSOR DRIVER RFI 27 6,7,8 (1) 31 CGY2021G 19 RFO/VDD4 MGD771 GND VGG1 VGG2 (1) Ground pins 1 to 5, 9 to 17, 20 to 26, 28, 30, 32, 34 to 41 and 43 to 48. Fig.1 Block diagram. PINNING SYMBOL GND PIN 1 to 5 DESCRIPTION ground RFO/VDD4 6 to 8 PA output and fourth stage supply voltage GND 9 to 17 ground 18 power sensor output and supply voltage VGG2 19 third and fourth stage negative gate supply voltage GND 20 to 26 ground RFI 27 PA input GND 28 ground VDD1 29 first stage supply voltage GND 30 ground VGG1 31 first and second stage negative gate supply voltage GND 32 ground VDD2 33 second stage supply voltage GND 34 to 41 DETO/VDD5 VDD3 42 GND 43 to 48 1997 Apr 03 ground third stage supply voltage ground 3 Philips Semiconductors Preliminary specification 37 GND GND 1 36 GND GND 2 35 GND GND 3 34 GND GND 4 33 VDD2 GND 5 32 GND RFO/VDD4 6 RFO/VDD4 7 RFO/VDD4 8 29 VDD1 GND 9 28 GND 31 VGG1 CGY2021G 30 GND 4 GND 23 GND 24 GND 21 GND 22 GND 20 VGG2 19 DETO/VDD5 18 25 GND GND 16 GND 12 GND 17 26 GND GND 15 GND 11 GND 13 27 RFI GND 14 GND 10 Fig.2 Pin configuration. 1997 Apr 03 38 GND 39 GND 40 GND 41 GND 42 VDD3 43 GND 44 GND CGY2021G 45 GND 46 GND 48 GND handbook, full pagewidth 47 GND DCS/PCS 2 W power amplifier MGD770 Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G The amplifier bias is set by using a negative voltage applied at pins VGG1 and VGG2. This negative voltage must be present before the supply voltage is applied to the drains to avoid current overstress of the amplifier. FUNCTIONAL DESCRIPTION Operating conditions The CGY2021G is designed to meet the European Telecommunications Standards Institute (ETSI) DCS documents, the ETS 300 577 specification, which are defined as follows: Power sensor driver The power sensor driver is a buffer amplifier that delivers an output signal at the DETO pin which is proportional to the amplifier power. This signal can be detected by external diodes for power control purpose. As the sensor signal is taken from the input of the last stage of the PA, it is isolated from disturbances at the output by the reverse isolation of the PA output stage. An impedance mismatch at the PA output therefore does not significantly influence the signal delivered by the power sensor as this normally occurs when power sense is made using a directional coupler. Consequently, the cost and space of using a directional coupler are saved. • ton = 542.8 µs • T = 4.3 ms • Duty cycle = 1/8. This amplifier is specifically designed for pulse operation allowing the use of a LQFP48 plastic package. Power amplifier The Power Amplifier (PA) consists of four cascaded gain stages with an open-drain configuration. Each drain has to be loaded externally by an adequate reactive circuit which also has to be a DC path to the supply. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied. SYMBOL PARAMETER MIN. MAX. UNIT VDD positive supply voltage − 7 V VGG negative supply voltage − −10 V Tj(max) maximum operating junction temperature − 150 °C Tstg IC storage temperature − 150 °C Ptot total power dissipation − 1.3 W THERMAL CHARACTERISTICS General operating conditions applied. SYMBOL Rth j-c PARAMETER thermal resistance from junction to case; note 1 VALUE UNIT 45 K/W Note 1. This thermal resistance is a typical value and is measured under DCS/PCS pulse conditions. 1997 Apr 03 5 Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G DC CHARACTERISTICS VDD = 4.5 V; Tamb = 25 °C; peak current values during burst; general operating conditions applied; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Pins RFO/VDD4, VDD3, VDD2, VDD1 and DETO/VDD5 VDD positive supply voltage − 4.5 − V IDD positive peak supply current − 1.4 − A Pins VGG1 and VGG2 VGG1 negative supply voltage note 1 − −1.6 − V VGG2 negative supply voltage note 1 − −1.6 − V IGG1 + IGG2 negative peak supply current − − 2 mA Note 1. The negative bias VGG must be applied 10 µs before the power amplifier is switched on, and must remain applied until the power amplifier has been switched off. 1997 Apr 03 6 Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G AC CHARACTERISTICS VDD = 4.5 V; Tamb = 25 °C; general operating conditions applied; unless otherwise specified. Measured and guaranteed on CGY2021G evaluation board. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Power amplifier Pi input power S11 input return loss fRF RF frequency range Po(max) maximum output power −2 − +2 dBm 50 Ω source; note 1 − − −10 dB DCS 1710 − 1785 MHz PCS 1850 − 1910 MHz Tamb = 25 °C; VDD = 4.5 V 33 34 − dBm Tamb = −20 to +85 °C; VDD = 4.2 V 31 − − dBm DCS; at Po(max) 40 50 − % η efficiency − 47 − % RS optimum series load resistance − 6 − Ω CS optimum series load capacitance − 11 − pF PCS; at Po(max) Po(off) isolation − −50 − dBm NRX output noise in RX band − − −121 dBm/Hz H2 2nd harmonic level − −40 − dBc H3 3rd harmonic level − −35 − dBc Stab stability note 2 − − −50 dBc RL = 100 Ω; relative to PA output power into 50 Ω load − −25 − dBc PA OFF; Pi = 0 dBm Power sensor driver Po(DET) sensor driver output power Notes 1. Including the 82 Ω resistor connected in parallel at the power amplifier input on the evaluation board. 2. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1 load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees during a 60 seconds test period. 1997 Apr 03 7 Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G APPLICATION INFORMATION handbook, full pagewidth 10 pF 48 47 46 45 44 43 42 41 40 39 38 37 VDD3 1 36 2 35 3 34 4 VDD2 5 6 7 PA output C1(3) C2(3) C3(3) 8 RFO/VDD4 1 nF VGG −1.6 V 33 32 VGG1 31 30 CGY2021G 22 pF 47 Ω 1 nF 10 pF VDD1 29 28 9 10 RFI 100 pF 27 11 26 12 25 TRL2 (2) PA input 82 Ω 1.5 pF DETO VGG2 13 14 15 16 17 18 19 20 21 22 23 24 TRL1(1) 10 pF 12 pF 100 Ω 12 pF 6 nH 39 Ω MGD772 180 Ω 10 nF Vcontrol 0.8 to 3 V 1 kΩ VDD BSR14 BAS70 1 kΩ PHP109 1 kΩ Vdiode 560 Ω DC output BAS70 Vbat 3.6 V 1 nF 1.25 V All capacitors are type: SMD0603. Thickness: 0.8 mm; substrate: FR4; εr = 4.7. (1) TRL1: width = 0.3 mm; length = 16 mm. (2) TRL2: width = 0.5 mm; length = 10 mm. (3) the component values are: SYSTEM C1 (pF) C2 (pF) C3 (pF) DCS 2.2 1.8 2.2 PCS 1.5 1.8 1.5 1.2 2.2 Fig.3 Evaluation board schematic. 1997 Apr 03 −90 µA 8 39 pF Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G PACKAGE OUTLINE LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm SOT313-2 c y X 36 25 A 37 24 ZE Q e E HE A A2 (A 3) A1 w M pin 1 index θ bp Lp L 13 48 detail X 12 1 ZD e v M A w M bp D B HD v M B 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HD HE L Lp Q v w y mm 1.60 0.20 0.05 1.45 1.35 0.25 0.27 0.17 0.18 0.12 7.1 6.9 7.1 6.9 0.5 9.15 8.85 9.15 8.85 1.0 0.75 0.45 0.69 0.59 0.2 0.12 0.1 Z D (1) Z E (1) θ 0.95 0.55 7 0o 0.95 0.55 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 93-06-15 94-12-19 SOT313-2 1997 Apr 03 EUROPEAN PROJECTION 9 o Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G If wave soldering cannot be avoided, the following conditions must be observed: SOLDERING Introduction • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. • The footprint must be at an angle of 45° to the board direction and must incorporate solder thieves downstream and at the side corners. Even with these conditions, do not consider wave soldering LQFP packages LQFP48 (SOT313-2), LQFP64 (SOT314-2) or LQFP80 (SOT315-1). This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Reflow soldering Reflow soldering techniques are suitable for all LQFP packages. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering is not recommended for LQFP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. 1997 Apr 03 10 Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Short-form specification The data in this specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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