PHILIPS CGY2010G

INTEGRATED CIRCUITS
DATA SHEET
CGY2010G; CGY2011G
GSM 4 W power amplifiers
Objective specification
Supersedes data of 1995 Oct 25
File under Integrated Circuits, IC17
1996 Jul 08
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
CGY2010G; CGY2011G
FEATURES
GENERAL DESCRIPTION
• Power Amplifier (PA) overall efficiency 45%
• Integrated power sensor driver
The CGY2010G and CGY2011G are GSM class 4 GaAs
Monolithic Microwave Integrated Circuits (MMICs) power
amplifiers specifically designed to operate at 4.8 V battery
supply. These ICs also include a power sensor driver so
that no directional coupler is required in the power control
loop.
• Low output noise floor of PA < −129 dBm/Hz in GSM RX
band
Both ICs have the same performance but are issued from
different wafer fabs.
• 35.5 dB gain
• 0 dBm input power
• Gain control range >55 dB
• Wide operating temperature range −20 to +85 °C
The PAs require only a 30 dB harmonic low-pass filter to
comply with the GSM transmit spurious specification.
They can be switched off and their power controlled by
monitoring the actual drain voltage applied to the amplifier
stages.
• LQFP 48 pin package
• Compatible with power ramping controller PCA5075
• Compatible with GSM RF transceiver SA1620.
APPLICATIONS
• 880 to 915 MHz hand-held transceivers for E-GSM
applications
• 900 MHz TDMA systems.
QUICK REFERENCE DATA
PARAMETER (1)
SYMBOL
MIN.
TYP.
MAX.
UNIT
VDD
positive supply voltage
−
4.2
−
V
IDD
positive peak supply current
−
1.8
−
A
Pout(max)
maximum output power
−
35.5
−
dBm
Tamb
operating ambient temperature
−20
−
+85
οC
Note
1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.
ORDERING INFORMATION
TYPE
NUMBER
CGY2010G
CGY2011G
1996 Jul 08
PACKAGE
NAME
DESCRIPTION
VERSION
LQFP48
plastic low profile quad flat package; 48 leads; body 7 × 7 × 1.4 mm
SOT313-2
2
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
CGY2010G; CGY2011G
BLOCK DIAGRAM
VDD1
handbook, full pagewidth
29
VDD2
VDD3
33
42
18
DETO/VDD5
SENSOR
DRIVER
RFI
27
6,7.8
RFO/VDD4
CGY2010G
CGY2011G
(1)
31
19
VGG1
VGG2
GND
MGB761
(1) Ground pins 1 to 5, 9 to 17, 20 to 26, 28, 30, 32, 34 to 41 and 43 to 48.
Fig.1 Block diagram.
PINNING
SYMBOL
PIN
DESCRIPTION
GND
1 to 5
ground
RFO/VDD4
6 to 8
power amplifier output and fourth stage supply voltage
GND
9 to 17
ground
DETO/VDD5
18
power sensor output and supply voltage
VGG2
19
fourth stage negative gate supply voltage
GND
20 to 26
ground
RFI
27
power amplifier input
GND
28
ground
VDD1
29
first stage supply voltage
GND
30
ground
VGG1
31
first three stages negative gate supply voltage
GND
32
ground
VDD2
33
second stage supply voltage
GND
34 to 41
VDD3
42
GND
43 to 48
1996 Jul 08
ground
third stage supply voltage
ground
3
Philips Semiconductors
Objective specification
37 GND
38 GND
39 GND
40 GND
41 GND
42 VDD3
43 GND
44 GND
45 GND
46 GND
48 GND
handbook, full pagewidth
CGY2010G; CGY2011G
47 GND
GSM 4 W power amplifiers
GND
1
36 GND
GND
2
35 GND
GND
3
34 GND
GND
4
33 VDD2
GND
5
32 GND
RFO/VDD4
6
RFO/VDD4
7
31 VGG1
CGY2010G
CGY2011G
30 GND
RFO/VDD4
8
29 VDD1
GND
9
28 GND
GND 10
27 RFI
Fig.2 Pin configuration.
1996 Jul 08
4
24
GND 23
GND
GND 22
GND 21
GND 20
VGG2 19
GND 17
DETO/VDD5 18
GND 16
GND 15
25 GND
GND 14
26 GND
GND 12
GND 13
GND 11
MGB760
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
CGY2010G; CGY2011G
The amplifier bias is set by means of a negative voltage
applied at pins VGG1 and VGG2. This negative voltage must
be present before the supply voltage is applied to the
drains to avoid current overstress for the amplifier.
FUNCTIONAL DESCRIPTION
Operating conditions
The CGY2010G and CGY2011G are designed to meet the
European Telecommunications Standards Institute (ETSI)
GSM documents, the “ETS 300 577 specification”, which
are defined as follows:
Power sensor driver
The power sensor driver is a buffer amplifier that delivers
a signal to the DETO output pin which is proportional to the
amplifier power. This signal can be detected by external
diodes for power control purpose. As the sensor signal is
taken from the input of the last stage of the PA, it is isolated
from disturbances at the output by the reverse isolation of
the PA output stage.
• ton = 542.8 µs
• T = 4.3 ms
• Duty cycle = 1/8
The devices are specifically designed for pulse operation
allowing the use of a LQFP48 plastic package.
Impedance mismatch at the PA output therefore, does not
significantly influence the signal delivered by the power
sensor as this normally occurs when power sense is made
using a directional coupler. Consequently the cost and
space of using a directional coupler are saved.
Power amplifier
The power amplifier consists of four cascaded gain stages
with an open-drain configuration. Each drain has to be
loaded externally by an adequate reactive circuit which
also has to be a DC path to the supply.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDD
positive supply voltage
−
7
V
VGG
negative supply voltage
−
−10
V
Tj(max)
maximum operating junction temperature
−
150
°C
Tstg
IC storage temperature
−
150
°C
Ptot
total power dissipation
−
1.5
W
THERMAL CHARACTERISTICS
General operating conditions applied.
SYMBOL
Rth j-c
PARAMETER
thermal resistance from junction to case; note 1
Note
1. This thermal resistance is measured under GSM pulse conditions.
1996 Jul 08
5
VALUE
UNIT
32
K/W
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
CGY2010G; CGY2011G
DC CHARACTERISTICS
VDD = 4.5 V; Tamb = 25 °C; general operating conditions applied; peak current values during burst; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Pins RFO/VDD4, VDD3, VDD2, VDD1 and DETO/VDD5
VDD
positive supply voltage
0
4.2
5.5
V
IDD
positive peak supply current
−
1.8
2.2
A
Pins VGG1 and VGG2
VGG1
negative supply voltage
note 1
−
−2
−
V
VGG2
negative supply voltage
note 1
−
−2
−
V
IGG1 + IGG2
negative peak supply current
−
2.5
5
mA
Note
1. The negative bias VGG1 and VGG2 must be applied 10 µs before the power amplifier is switched on, and must remain
applied until the power amplifier has been switched off.
1996 Jul 08
6
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
CGY2010G; CGY2011G
AC CHARACTERISTICS
VDD = 4.5 V; Tamb = 25 °C; general operating conditions applied; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Power amplifier
−1.5
−
−
880
34.5
Pin
input power
S11
input return loss
fRF
RF frequency range
Pout(max)
maximum output power
Tamb = −20 to +85 °C; VDD = 4.2 V
32.5
−
−
dBm
η
efficiency
VDD = 4.2 V
−
45
−
%
Pout(min)
minimum output power
VDD < 0.1 V
−
−
−20
dBm
NRX
output noise in RX band
fRF = 925 MHz at Pout(max)
−
−
−117
dBm/Hz
fRF = 935 MHz at Pout(max)
−
−
−129
dBm/Hz
fRF = 960 MHz at Pout(max)
−
−
−129
dBm/Hz
note 1; 50 Ω source
Tamb = 25 °C; VDD = 4.5 V
+1.5
dBm
−
−6
dB
−
915
MHz
35.5
−
dBm
H2
2nd harmonic level
−
−33
−30
dBc
H3
3rd harmonic level
−
−40
−37
dBc
Stab
stability
note 2
−
−
−70
dBc
Power sensor driver
Pout(DET)
sensor driver output
power
RL = 100 Ω; relative to PA output
power into 50 Ω load
−
−23
−
dBc
∆Pout(DET)
driver output power
variation
load VSWR < 6 : 1 at PA output
−
−
2
dB
Notes
1. Including the 100 Ω resistor connected in parallel at the power amplifier input on the evaluation board.
2. The device is adjusted to provide nominal value of load power into a 50 Ω load. The device is switched off and a 6 : 1
load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied
360 electrical degrees during a 60 second period.
1996 Jul 08
7
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
CGY2010G; CGY2011G
APPLICATION INFORMATION
handbook, full pagewidth
10 pF
48 47 46 45 44 43 42 41 40 39 38 37
VDD3
1
2
35
3
34
4
VDD2
5
PA
output
8 (1)
pF
33 pF
10 (1)
6
pF
7
RFO/VDD4
8
(1)
CGY2010G
CGY2011G
VGG1
VDD1
9
10
TRL3
36
RFI
(3)
27
pF
1
nF
33
47 Ω
32
31
30
39
pF
1
nF
28
100 pF
X7R
27
26
12
25
DETO VGG2
10 nH
100
Ω
13 14 15 16 17 18 19 20 21 22 23 24
−2 V
TRL1 (2)
29
11
(4)
TRL2
Zc = 50 Ω
PA
input
1.5 pF
100 pF
10
pF
10
nF
39 Ω
100 Ω
22
nH
100 pF
100 Ω
1 kΩ
Vcontrol
0.8 to 3 V
BSR14
PMOS
Ron < 0.1 Ω
PHP109
BAS70
1 kΩ
Vdiode
DC output
560 Ω
1 nF
BAS70
Vbat
+4.8 V
MGB764
−90 µA
39 pF
1.25 V
(1) These capacitors are type: SMD0402; rest of the capacitors: SMD0603.
(2) TRL1: width: 0.3 mm; length: 16 mm.
(3) TRL2: width: 0.3 mm; length: 6.3 mm.
(4) TRL3: width: 0.3 mm; length: 20 mm.
Fig.3 Evaluation board schematic (FR4, 0.8 mm).
1996 Jul 08
8
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
CGY2010G; CGY2011G
PACKAGE OUTLINE
LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm
SOT313-2
c
y
X
36
25
A
37
24
ZE
Q
e
E HE
A A2
(A 3)
A1
w M
pin 1 index
θ
bp
Lp
L
13
48
detail X
12
1
ZD
e
v M A
w M
bp
D
B
HD
v M B
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HD
HE
L
Lp
Q
v
w
y
mm
1.60
0.20
0.05
1.45
1.35
0.25
0.27
0.17
0.18
0.12
7.1
6.9
7.1
6.9
0.5
9.15
8.85
9.15
8.85
1.0
0.75
0.45
0.69
0.59
0.2
0.12
0.1
Z D (1) Z E (1)
θ
0.95
0.55
7
0o
0.95
0.55
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
93-06-15
94-12-19
SOT313-2
1996 Jul 08
EUROPEAN
PROJECTION
9
o
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
CGY2010G; CGY2011G
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Reflow soldering
Reflow soldering techniques are suitable for all LQFP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering is not recommended for LQFP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
If wave soldering cannot be avoided, the following
conditions must be observed:
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
• The footprint must be at an angle of 45° to the board
direction and must incorporate solder thieves
downstream and at the side corners.
Even with these conditions, do not consider wave
soldering LQFP packages LQFP48 (SOT313-2),
LQFP64 (SOT314-2) or LQFP80 (SOT315-1).
1996 Jul 08
10
Philips Semiconductors
Objective specification
GSM 4 W power amplifiers
CGY2010G; CGY2011G
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Short-form specification
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 08
11
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Internet: http://www.semiconductors.philips.com/ps/
(1) CGY2010G_2011G_2 June 26, 1996 11:51 am
© Philips Electronics N.V. 1996
SCA50
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Printed in The Netherlands
647021/1200/02/pp12
Date of release: 1996 Jul 08
Document order number:
9397 750 00955