DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product specification 2002 Apr 09 Philips Semiconductors Product specification NPN resistor-equipped transistor; PNP general purpose transistor PUMF11 FEATURES QUICK REFERENCE DATA • Resistor-equipped transistor and general purpose transistor in one package SYMBOL PARAMETER MAX. UNIT TR1 (NPN) • 100 mA collector current VCEO collector-emitter voltage IO output current (DC) 100 mA • SOT363 package; replaces two SOT323 (SC-70) packaged devices on same PCB area R1 bias resistor 22 kΩ R2 bias resistor 47 kΩ • Reduced pick and place costs. TR2 (PNP) VCEO collector-emitter voltage 50 V APPLICATIONS IC collector current (DC) 100 mA • Power management switch for portable equipment, e.g. cellular phone and CD player ICM peak collector current 200 mA • 50 V collector-emitter voltage • 300 mW total power dissipation 50 V PINNING • Switch for regulator. PIN DESCRIPTION DESCRIPTION 1, 4 emitter TR1; TR2 NPN resistor-equipped transistor and a PNP general purpose transistor in a SOT363 (SC-88) plastic package. 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 MARKING TYPE NUMBER PUMF11 MARKING CODE(1) 6 6 R1∗ 5 5 4 4 Note TR2 TR1 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. R2 1 Top view 2 R1 3 MAM465 1 2 3 Fig.1 Simplified outline (SOT363) and symbol. 2, 5 6, 3 1, 4 MBK120 Fig.2 Equivalent inverter symbol. 2002 Apr 09 2 Philips Semiconductors Product specification NPN resistor-equipped transistor; PNP general purpose transistor PUMF11 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C TR1 (NPN) VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 10 V Vi input voltage positive − +40 V negative − −10 V IO output current (DC) − 100 mA ICM peak collector current − 100 mA V TR2 (PNP) VCBO collector-base voltage open emitter − −50 VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA − 300 mW Per device Ptot Tamb ≤ 25 °C; note 1 total power dissipation Note 1. Device mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient in free air; note 1 Note 1. Device mounted on an FR4 printed-circuit board. 2002 Apr 09 3 VALUE UNIT 416 K/W Philips Semiconductors Product specification NPN resistor-equipped transistor; PNP general purpose transistor PUMF11 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT − − 100 TR1 (NPN) ICBO collector-base cut-off current ICEO collector-emitter cut-off current VCB = 50 V; IE = 0 nA VCE = 30 V; IB = 0 − − 1 µA VCE = 30 V; IB = 0; Tj = 150 °C − − 50 µA mA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 0.12 hFE DC current gain VCE = 5 V; IC = 5 mA 80 − − VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 150 mV Vi(off) input off voltage VCE = 5 V; IC = 100 µA − 0.9 0.5 V Vi(on) input on voltage VCE = 0.3 V; IC = 2 mA 2 1.1 − V R1 input resistor 15.4 22 28.6 kΩ R2 ------R1 resistor ratio 1.7 2.1 2.6 Cc collector capacitance VCB = 10 V; IE = ie = 0; f = 1 MHz − − 2.5 pF ICBO collector-base cut-off current VCB = −30 V; IE = 0 − − −100 nA TR2 (PNP) ICEO collector-emitter cut-off current VCB = −30 V; IB = 0; Tj = 150 °C − − −10 µA IEBO emitter-base cut-off current VEB = −4 V; IC = 0 − − −100 nA hFE DC current gain VCE = −6 V; IC = −1 mA 120 − − VCEsat saturation voltage IC = −50 mA; IB = −5 mA; note 1 − − −200 mV Cc collector capacitance VCB = −12 V; IE = ie = 0; f = 1 MHz − − 2.2 pF fT transition frequency VCE = −12 V; IC = −2 mA; f = 100 MHz 100 − − MHz Note 1. Device mounted on an FR4 printed-circuit board. APPLICATION INFORMATION 4 handbook, halfpage 3 5 RBE(ext) RB(ext) 6 R1 2 R2 1 MHC182 Fig.3 Typical power management circuit. 2002 Apr 09 4 Philips Semiconductors Product specification NPN resistor-equipped transistor; PNP general purpose transistor PUMF11 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION SOT363 2002 Apr 09 REFERENCES IEC JEDEC EIAJ SC-88 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN resistor-equipped transistor; PNP general purpose transistor PUMF11 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2002 Apr 09 6 Philips Semiconductors Product specification NPN resistor-equipped transistor; PNP general purpose transistor PUMF11 NOTES 2002 Apr 09 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA74 © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2002 Apr 09 Document order number: 9397 750 09388