BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor Rev. 01 — 12 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 50 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[2] ηD VDS PL(AV) PL(M)[1] Gp (MHz) (V) (W) (W) (dB) (%) (dBc) (dBc) 3400 to 3600 28 9 70 14 −49[3] −64[3] f 23 ACPR885k ACPR1980k [1] PL(M) stands for peak output power. [2] Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz. [3] Measured within 30 kHz bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V, an IDq of 450 mA, a power gain of 14 dB, a drain efficiency of 23 % and a peak output power of 70 W: n Qualified up to a maximum VDS operation of 32 V n Suitable for operation in the 3.4 GHz to 3.8 GHz frequency range n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation n Internally matched for ease of use n Low gold plating thickness on leads BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications n RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to 3800 MHz frequency range 2. Pinning information Table 2: Pinning Pin Description Simplified outline Symbol BLF6G38-50 (SOT502A) 1 drain 2 gate 3 source 1 1 [1] 3 2 2 3 sym112 BLF6G38LS-50 (SOT502B) 1 drain 2 gate 3 source 1 1 [1] 3 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF6G38-50 - flanged LDMOST ceramic package; 2 mounting holes; SOT502A 2 leads BLF6G38LS-50 - earless flanged LDMOST ceramic package; 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 16.5 A Tstg storage temperature −65 +150 °C Tj junction temperature - 225 °C BLF6G38-50_BLF6G38LS-50_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 12 February 2008 2 of 12 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-case) thermal resistance from junction to case Type Tcase = 80 °C; BLF6G38-50 PL = 50 W BLF6G38LS-50 Typ Max Unit 0.9 - K/W 0.7 - K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.4 mA Min Typ Max Unit 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 80 mA 1.4 2 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 2.8 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 11.9 16.4 - A IGSS gate leakage current VGS = +11 V; VDS = 0 V - - 280 nA gfs forward transconductance VDS = 10 V; ID = 2.8 A - 5.6 - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 2.8 A - 0.18 0.29 Ω Crs feedback capacitance - 1.17 - pF VGS = 0 V; VDS = 28 V; f = 1 MHz 7. Application information Table 7. Application information Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel bandwidth is 1.23 MHz; f1 = 3400 MHz; f2 = 3500 MHz; f3 = 3600 MHz; RF performance at VDS = 28 V; IDq = 450 mA; Tcase = 25 °C; unless otherwise specified, in a class-AB production circuit. Symbol Parameter Conditions Min Typ Max Unit PL(M) peak output power PL(AV) = 9 W 65 70 - W Gp power gain PL(AV) = 9 W 12.5 14 - dB RLin input return loss PL(AV) = 9 W - −10 - dB ηD drain efficiency PL(AV) = 9 W % ACPR885k adjacent channel power ratio (885 kHz) ACPR1980k adjacent channel power ratio (1980 kHz) [1] 20 23 PL(AV) = 9 W [1] - −46 −49 - dBc PL(AV) = 9 W [1] −62 −64 - dBc Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G38-50 and BLF6G38LS-50 are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 450 mA; PL = PL(1dB); f = 3600 MHz. BLF6G38-50_BLF6G38LS-50_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 12 February 2008 3 of 12 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description Frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame; frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8; FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46; number of subchannels = 30; PAR = 9.5 dB. Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB. Table 8. Frame structure Modulation technique Data length Zone 0 Frame contents FCH 2 symbols × 4 subchannels QPSK1/2 3 bit Zone 0 data 2 symbols × 26 subchannels 64QAM3/4 692 bit Zone 0 data 44 symbols × 30 subchannels 64QAM3/4 10000 bit 7.2.2 Graphs 001aah395 5 001aah396 15 Gp Gp (dB) EVM (%) 30 ηD (%) 4 13 24 3 11 18 2 9 12 1 7 6 ηD 5 0 0 4 8 12 0 PL(AV) (W) 0 12 8 PL(AV) (W) VDS = 28 V; IDq = 450 mA; f = 3500 MHz. VDS = 28 V; IDq = 450 mA; f = 3500 MHz. Fig 1. EVM as a function of average load power; typical values Fig 2. Power gain and drain efficiency as functions of average load power; typical values BLF6G38-50_BLF6G38LS-50_1 Preliminary data sheet 4 © NXP B.V. 2008. All rights reserved. Rev. 01 — 12 February 2008 4 of 12 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 001aah397 −20 ACPR (dBc) −30 (1) −40 −50 (2) (3) −60 −70 0 4 8 12 PL(AV) (W) VDS = 28 V; IDq = 450 mA; f = 3500 MHz. (1) f = 10 MHz (2) f = 20 MHz (3) f = 30 MHz Fig 3. Adjacent channel power ratio as a function of average load power; typical values 7.3 Single carrier N-CDMA broadband performance at 9 W average 7.3.1 Graphs 001aah398 16 Gp (dB) 15 26 ηD (%) 25 Gp 24 14 13 001aah399 −40 ACPR (dBc) (1) (2) −50 ACPR1500k 23 ηD ACPR885k (1) (2) 22 12 −60 (1) 11 10 3400 21 3450 3500 20 3600 3550 (2) −70 3400 3450 3500 f (MHz) VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz. ACPR1980k 3550 3600 f (MHz) VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 4. Power gain and drain efficiency as functions of frequency; typical values Fig 5. Adjacent channel power ratio as a function of frequency; typical values BLF6G38-50_BLF6G38LS-50_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 12 February 2008 5 of 12 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 001aah400 18 40 ηD (%) Gp (dB) 001aah401 −30 ACPR (dBc) −40 16 30 −50 Gp 14 20 −60 12 (1) 10 ηD (1) (2) ACPR885k −70 ACPR1500k (2) (1) (2) ACPR1980k 10 10−1 0 1 102 10 −80 10−1 1 102 10 PL (W) PL (W) VDS = 28 V; IDq = 450 mA; f = 3500 MHz; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. VDS = 28 V; IDq = 450 mA; f = 3500 MHz; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 6. Power gain and drain efficiency as functions of load power; typical values 001aah402 16 Gp (dB) Fig 7. Adjacent channel power ratio as a function of load power; typical values 001aah403 1.5 Pi (W) 15 1.0 (2) (3) (2) (1) (1) 14 (3) 0.5 13 12 10−1 1 102 10 0 10−1 VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. 102 10 VDS = 28 V; IDq = 450 mA; Single Carrier N-CDMA; PAR = 9.7 dB at 0.01 % probability; Channel Bandwidth = 1.23 MHz; IBW = 30 kHz. (1) f = 3400 MHz (1) f = 3400 MHz (2) f = 3500 MHz (2) f = 3500 MHz (3) f = 3600 MHz (3) f = 3600 MHz Fig 8. Power gain as a function of load power; typical values Fig 9. Input power as a function of load power; typical values BLF6G38-50_BLF6G38LS-50_1 Preliminary data sheet 1 PL (W) PL (W) © NXP B.V. 2008. All rights reserved. Rev. 01 — 12 February 2008 6 of 12 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 8. Test information C8 R2 C4 C10 C9 C7 L1 C6 C3 R1 C1 C2 C5 BLF6G38-50 BLF6G38-50 INPUT-REV 1A 30RF35 NXP OUTPUT-REV 1A 30RF35 NXP 001aah404 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit Table 9. List of components For test circuit, see Figure 10. Component Description Value Remarks C1, C4, C5, C6 multilayer ceramic chip capacitor 10 pF [1] C2 multilayer ceramic chip capacitor 0.7 pF [1] C3, C8, C9 multilayer ceramic chip capacitor 100 nF [2] C7 multilayer ceramic chip capacitor 10 µF; 50 V [3] C10 electrolytic capacitor 470 µF; 63 V R1, R2 SMD resistor 9.1 Ω L1 ferrite SMD bead - [1] American Technical Ceramics type 100A or capacitor of same quality. [2] Vishay VJ1206Y104KXB or capacitor of same quality. [3] TDK C5750X7R1H106M or capacitor of same quality. BLF6G38-50_BLF6G38LS-50_1 Preliminary data sheet Ferroxcube BDS 3/3/4.6-4S2 or equivalent © NXP B.V. 2008. All rights reserved. Rev. 01 — 12 February 2008 7 of 12 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D D1 0.045 0.785 0.035 0.745 0.210 0.133 0.170 0.123 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 99-12-28 03-01-10 SOT502A Fig 11. Package outline SOT502A BLF6G38-50_BLF6G38LS-50_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 12 February 2008 8 of 12 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches 0.186 0.135 0.505 0.006 0.495 0.003 OUTLINE VERSION E E1 F H L Q U1 U2 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 1.70 1.45 20.70 20.45 9.91 9.65 0.25 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.045 0.785 0.035 0.745 0.210 0.170 0.067 0.815 0.057 0.805 D D1 REFERENCES IEC JEDEC JEITA 0.390 0.010 0.380 EUROPEAN PROJECTION ISSUE DATE 03-01-10 07-05-09 SOT502B Fig 12. Package outline SOT502B BLF6G38-50_BLF6G38LS-50_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 12 February 2008 9 of 12 BLF6G38-50; BLF6G38LS-50 NXP Semiconductors WiMAX power LDMOS transistor 10. Abbreviations Table 10. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function CW Continuous Wave EVM Error Vector Magnitude FCH Frame Control Header FFT Fast Fourier Transform IBW Instantaneous BandWidth LDMOS Laterally Diffused Metal-Oxide Semiconductor LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor N-CDMA Narrowband Code Division Multiple Access PAR Peak-to-Average power Ratio PUSC Partial Usage of SubChannels RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio WCS Wireless Communications Service WiMAX Worldwide Interoperability for Microwave Access 11. Revision history Table 11. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G38-50_BLF6G38LS-50_1 20080212 Preliminary data sheet - - BLF6G38-50_BLF6G38LS-50_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 12 February 2008 10 of 12 NXP Semiconductors BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] BLF6G38-50_BLF6G38LS-50_1 Preliminary data sheet © NXP B.V. 2008. All rights reserved. Rev. 01 — 12 February 2008 11 of 12 NXP Semiconductors BLF6G38-50; BLF6G38LS-50 WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 NXP WiMAX signal . . . . . . . . . . . . . . . . . . . . . . 4 WiMAX signal description . . . . . . . . . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Single carrier N-CDMA broadband performance at 9 W average . . . . . . . . . . . . . . 5 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 12 February 2008 Document identifier: BLF6G38-50_BLF6G38LS-50_1