BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] Gp ηD ACPR885k ACPR1980k (W) (dB) (%) (dBc) (dBc) 2 14 20 −49[2] −64[2] f VDS PL(AV) (MHz) (V) 3400 to 3600 28 [1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. [2] Measured within 30 kHz bandwidth. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 mA: n Qualified up to a maximum VDS operation of 32 V n Integrated ESD protection n Excellent ruggedness n High efficiency n Excellent thermal stability n Designed for broadband operation n Internally matched for ease of use n Low gold plating thickness on leads n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 1.3 Applications n RF power amplifiers for base stations and multi carrier applications in the 3400 MHz to 3600 MHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G38-10 (SOT975B) 1 drain 2 gate 3 source 1 1 [1] 2 3 sym112 2 BLF6G38-10G (SOT975C) 1 drain 2 gate 3 source 1 1 [1] 2 3 sym112 2 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version - earless flanged ceramic package; 2 leads SOT975B BLF6G38-10G - earless flanged ceramic package; 2 leads SOT975C BLF6G38-10 BLF6G38-10_BLF6G38-10G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 February 2009 2 of 15 BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS Conditions Min Max Unit drain-source voltage - 65 V VGS gate-source voltage −0.5 +13 V ID drain current - 3.1 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-case) thermal resistance from Tcase = 80 °C; BLF6G38-10 junction to case PL = 10 W (CW) BLF6G38-10G Conditions Type Typ Unit 4.0 K/W 4.0 K/W 6. Characteristics Table 6. Characteristics Tj = 25 °C per section; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.18 mA 65 - - V 1.4 1.9 2.4 V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 18 mA IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.4 µA IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 2.7 - - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 0.9 A 0.8 - - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 0.6 A 328 - 1256 mΩ Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - 3.6 - pF BLF6G38-10_BLF6G38-10G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 February 2009 3 of 15 BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 7. Application information Table 7. Application information Mode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; Channel Bandwidth is 1.23 MHz; f1 = 3400 MHz; f2 = 3500 MHz; f3 = 3600 MHz; RF performance at VDS = 28 V; IDq = 130 mA; Tcase = 25 °C; unless otherwise specified; in a class-AB production circuit. Symbol Parameter PL(AV) average output power Gp power gain RLin ηD ACPR885k Min Typ Max Unit - 2 - W PL(AV) = 2 W 13 14 - dB input return loss PL(AV) = 2 W - −10 - dB drain efficiency PL(AV) = 2 W 18 20 % adjacent channel power ratio (885 kHz) PL(AV) = 2 W [1] - −49 −46 dBc PL(AV) = 2 W [1] - −64 −61 dBc ACPR1980k adjacent channel power ratio (1980 kHz) [1] Conditions - Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G38-10 and BLF6G38-10G are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 130 mA; PL = PL(1dB); f = 3600 MHz. 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame; frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8; FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46; number of subchannels = 30; PAR = 9.5 dB. Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB. Table 8. Frame structure Frame contents Data length Zone 0 FCH 2 symbols × 4 subchannels QPSK1/2 3 bit Zone 0 data 2 symbols × 26 subchannels 64QAM3/4 692 bit Zone 0 data 44 symbols × 30 subchannels 64QAM3/4 10000 bit BLF6G38-10_BLF6G38-10G_1 Product data sheet Modulation technique © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 February 2009 4 of 15 BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 7.2.2 Graphs 001aaj362 12 001aaj363 20 50 ηD (%) Gp (dB) EVM (%) 40 18 Gp 8 16 30 14 20 4 12 0 10−1 1 10 10−1 10 10 ηD 0 1 PL (W) PL(AV) (W) VDS = 28 V; IDq = 130 mA; f = 3500 MHz. Fig 1. 10 VDS = 28 V; IDq = 130 mA; f = 3500 MHz. EVM as a function of load power; typical values Fig 2. Power gain and drain efficiency as function of average load power; typical values 001aaj364 −20 ACPR (dBc) ACPR10M −30 −40 ACPR20M −50 ACPR30M −60 10−1 1 10 PL(AV) (W) VDS = 28 V; IDq = 130 mA; f = 3500 MHz. Fig 3. Adjacent channel power ratio as a function of average load power; typical values BLF6G38-10_BLF6G38-10G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 February 2009 5 of 15 BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 7.3 Single carrier NA IS-95 broadband performance at 2 W average 7.3.1 Graphs 001aaj365 20 23 ηD (%) Gp (dB) 22 18 001aaj366 −40 ACPR (dBc) (2) (1) ACPR885k −50 21 16 ACPR1500k Gp 14 (1) (2) 20 ηD −60 (2) (1) ACPR1980k 19 12 10 3400 3450 3500 18 3600 3550 −70 3400 3440 3480 3520 3560 3600 f (MHz) f (MHz) VDS = 28 V; IDq = 130 mA; Single Carrier IS-95; PAR = 9.7 dB at 0.01 % probability. VDS = 28 V; IDq = 130 mA; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability. (1) Low frequency component (2) High frequency component Fig 4. Power gain and drain efficiency as function of frequency; typical values 001aaj367 20 50 ηD (%) Gp (dB) 40 18 Fig 5. Adjacent channel power ratio as a function of frequency; typical values 001aaj368 −35 ACPR (dBc) −45 (2) (1) Gp ACPR855k 30 16 −55 ACPR1500k 20 14 −65 12 10 ηD 10 10−1 0 1 10 (1) (2) (1) (2) ACPR1980k −75 10−1 1 PL(AV) (W) 10 PL(AV) (W) VDS = 28 V; IDq = 130 mA; f = 3500 MHz; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. VDS = 28 V; IDq = 130 mA; f = 3500 MHz; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; IBW = 30 kHz. (1) Low frequency component (2) High frequency component Fig 6. Power gain and drain efficiency as function of load power; typical values Fig 7. Adjacent channel power ratio as a function of load power; typical values BLF6G38-10_BLF6G38-10G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 February 2009 6 of 15 BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 001aaj369 20 Gp (dB) 001aaj370 0.20 Pi (W) 18 (3) 0.16 (1) (2) 16 (1) 0.12 (2) 14 0.08 (3) 12 0.04 10 10−1 1 0 10−1 10 PL (W) VDS = 28 V; IDq = 130 mA; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. (1) f = 3400 MHz (1) f = 3400 MHz (2) f = 3500 MHz (2) f = 3500 MHz (3) f = 3600 MHz (3) f = 3600 MHz Power gain as a function of load power; typical values Fig 9. Input power as a function of load power; typical values BLF6G38-10_BLF6G38-10G_1 Product data sheet 10 PL (W) VDS = 28 V; IDq = 130 mA; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. Fig 8. 1 © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 February 2009 7 of 15 BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 8. Test information C2 C5 L1 C4 C7 R2 C3 R1 C1 C6 BLF6G38-10 BLF6G38-10 Input Rev 2 NXP Output Rev 3 NXP PCB2 PCB1 001aaj371 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 10. Component layout for 3400 MHz to 3600 MHz test circuit BLF6G38-10 BLF6G38-10_BLF6G38-10G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 February 2009 8 of 15 BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor C2 C5 L1 C4 C7 R2 C3 R1 C1 C6 BLF6G38-10G BLF6G38-10G Input Rev 1 NXP Output Rev 1 NXP PCB2 PCB1 001aaj372 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 11. Component layout for 3400 MHz to 3600 MHz test circuit BLF6G38-10G Table 9. List of components For test circuit, see Figure 10 and Figure 11. Component Description Value Remarks C1, C3, C6 multilayer ceramic chip capacitor 20 pF ATC 100A C2 multilayer ceramic chip capacitor 1.5 µF TDK C4 multilayer ceramic chip capacitor 6.8 µF ATC 100A C5 multilayer ceramic chip capacitor 10 µF; 50 V TDK C7 electrolytic capacitor 220 µF; 63 V Elco L1 ferrite SMD bead - Ferroxcube bead R1, R2 SMD resistor 8.2 Ω Thin film BLF6G38-10_BLF6G38-10G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 February 2009 9 of 15 BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor Table 10. Measured test circuit impedances f Zi Zo (GHz) (Ω) (Ω) 3.40 12.61 - j23.96 5.21 - j6.31 3.45 14.16 - j22.23 5.47 - j6.01 3.50 16.00 - j21.74 5.72 - j5.87 3.55 17.43 - j22.91 5.90 - j5.91 3.60 17.11 - j25.43 5.92 - j6.09 3.40 19.33 - j22.54 4.71 - j7.09 3.45 21.20 - j21.65 4.75 - j6.82 3.50 23.02 - j22.41 4.72 - j6.65 3.55 23.70 - j24.95 4.60 - j6.55 3.60 21.98 - j28.26 4.36 - j6.47 BLF6G38-10 BLF6G38-10G BLF6G38-10_BLF6G38-10G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 February 2009 10 of 15 BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 9. Package outline Earless flanged ceramic package; 2 leads SOT975B D A F U1 D1 A c 1 E1 H U2 E 2 w1 b M 0 A Q M 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H Q U1 U2 w1 mm 3.63 3.05 3.38 3.23 0.23 0.18 6.55 6.40 6.93 6.78 6.55 6.40 6.93 6.78 0.23 0.18 11.05 10.80 0.76 0.66 6.43 6.27 6.43 6.27 0.51 0.143 0.133 0.009 0.258 0.273 0.258 0.273 0.009 0.435 0.030 0.253 0.253 0.120 0.127 0.007 0.252 0.267 0.252 0.267 0.007 0.425 0.026 0.247 0.247 0.02 inches OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 06-11-03 07-09-28 SOT975B Fig 12. Package outline SOT975B BLF6G38-10_BLF6G38-10G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 February 2009 11 of 15 BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor Earless flanged ceramic package; 2 leads SOT975C D A F U1 D1 A c 1 L Lp E1 H U2 E 2 w1 b M A α M Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H L Lp Q U1 U2 w1 α mm 3.63 3.05 3.38 3.23 0.23 0.18 6.55 6.40 6.93 6.78 6.55 6.40 6.93 6.78 0.23 0.18 10.29 10.03 1.65 1.02 0.51 +0.05 −0.05 6.43 6.27 6.43 6.27 0.51 7° 0° 0.143 0.133 0.009 0.258 0.273 0.258 0.273 0.009 0.405 0.040 +0.002 0.253 0.253 0.065 0.020 0.120 0.127 0.007 0.252 0.267 0.252 0.267 0.007 0.395 0.020 −0.002 0.247 0.247 7° 0° inches OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 08-05-20 08-07-10 SOT975C Fig 13. Package outline SOT975C BLF6G38-10_BLF6G38-10G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 February 2009 12 of 15 BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 10. Abbreviations Table 11. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function CW Continuous Wave EVM Error Vector Magnitude FCH Frame control Header FFT Fast Fourier Transform IBW Instantaneous BandWidth IS-95 Interim Standard 95 LDMOS Laterally Diffused Metal-Oxide Semiconductor NA North American N-CDMA Narrowband Code Division Multiple Access PAR Peak-to-Average power Ratio PUSC Partial Usage of SubChannels RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio WCS Wireless Communications Service WiMAX Worldwide Interoperability for Microwave Access 11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G38-10_BLF6G38-10G_1 20090203 Product data sheet - - BLF6G38-10_BLF6G38-10G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 February 2009 13 of 15 BLF6G38-10; BLF6G38-10G NXP Semiconductors WiMAX power LDMOS transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BLF6G38-10_BLF6G38-10G_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 February 2009 14 of 15 NXP Semiconductors BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Ruggedness in class-AB operation. . . . . . . . . . 4 NXP WiMAX signal . . . . . . . . . . . . . . . . . . . . . . 4 WiMAX signal description . . . . . . . . . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Single carrier NA IS-95 broadband performance at 2 W average . . . . . . . . . . . . . . 6 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 February 2009 Document identifier: BLF6G38-10_BLF6G38-10G_1