BUZ 73L H SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Pb-free BUZ 73 L H 200 V 7A 0.4 Ω PG-TO220-3 Yes S Maximum Ratings Parameter Symbol Continuous drain current ID TC = 28 ˚C Values Unit A 7 Pulsed drain current IDpuls TC = 25 ˚C 28 Avalanche current,limited by Tjmax IAR 7 Avalanche energy,periodic limited by Tjmax E AR 6.5 Avalanche energy, single pulse E AS mJ ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.67 mH, Tj = 25 ˚C 120 Gate source voltage VGS ESD-Sensitivity HBM as per MIL-STD 883 ± 20 Class 1 Power dissipation Ptot TC = 25 ˚C W 40 Operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip case RthJC ≤ 3.1 Thermal resistance, chip to ambient RthJA 75 ˚C K/W E DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Rev. 2.4 V 55 / 150 / 56 Page 1 2009-11-10 BUZ 73L H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V (BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage 200 - - V GS(th) V GS=VDS, ID = 1 mA Zero gate voltage drain current V 1.2 1.6 2 IDSS µA VDS = 200 V, V GS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 200 V, V GS = 0 V, Tj = 125 ˚C - 10 100 Gate-source leakage current IGSS V GS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) V GS = 5 V, ID = 3.5 A Rev. 2.4 nA - Page 2 0.3 0.4 2009-11-10 BUZ 73L H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 3.5 A Input capacitance 5 pF - 630 840 - 120 200 - 60 90 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance 6.5 Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S td(on) ns V DD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rise time - 15 20 - 60 90 - 100 130 - 40 50 tr V DD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Turn-off delay time td(off) V DD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Fall time tf V DD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω Rev. 2.4 Page 3 2009-11-10 BUZ 73L H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TC = 25 ˚C Inverse diode direct current,pulsed - - 28 V 1.1 1.7 trr ns - 140 - Qrr V R = 100 V, IF=lS, diF/dt = 100 A/µs Rev. 2.4 7 - V R = 100 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - V SD VGS = 0 V, IF = 14 A Reverse recovery time ISM TC = 25 ˚C Inverse diode forward voltage A µC - Page 4 0.7 - 2009-11-10 BUZ 73L H Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V 45 7.5 A W 6.5 Ptot ID 35 6.0 5.5 30 5.0 4.5 25 4.0 3.5 20 3.0 15 2.5 2.0 10 1.5 1.0 5 0 0 0.5 0.0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 TC ˚C 160 TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 2 10 1 K/W t = 15.0µs p A ZthJC DS /I D ID =V 100 µs R DS (o n) 10 1 10 0 10 -1 1 ms D = 0.50 0.20 10 0 0.10 10 ms 0.05 10 -2 0.02 0.01 single pulse DC 10 -1 0 10 10 1 10 2 10 -3 -7 10 V VDS Rev. 2.4 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Page 5 2009-11-10 BUZ 73L H Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 16 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 1.3 Ptot = 40W li h kj g f e Ω a c b A ID 1.1 VGS [V] a 2.0 12 d 10 8 c 6 4 b RDS (on) 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 5.5 i 6.0 j 7.0 k 8.0 l 10.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 d e hjf k ig 0.3 b 0.2 2 VGS [V] = a 2.0 2.5 0.1 0 0 a 2 4 6 8 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 7.0 j 8.0 k 10.0 0.0 V 12 0 2 4 6 8 10 VDS A 13 ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max V DS≥2 x ID x RDS(on)max 18 12 S A 10 ID gfs 14 12 9 8 7 10 6 8 5 6 4 3 4 2 2 1 0 0 0 1 2 3 4 5 6 7 8 V 10 VGS Rev. 2.4 0 2 4 6 8 10 A 12 15 ID Page 6 2009-11-10 BUZ 73L H Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 3.5 A, VGS = 5 V Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 1.3 RDS (on) 4.6 Ω V 1.1 4.0 VGS(th) 1.0 0.9 3.6 3.2 0.8 2.8 0.7 2.4 98% 0.6 98% 2.0 typ 1.6 typ 0.5 0.4 2% 1.2 0.3 0.2 0.8 0.1 0.4 0.0 -60 -20 20 60 100 ˚C 0.0 -60 160 -20 20 60 100 ˚C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 2 pF A IF C 10 3 10 1 Ciss 10 2 10 0 Coss Tj = 25 ˚C typ Crss Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 5 10 15 20 25 30 V 10 -1 0.0 40 VDS Rev. 2.4 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Page 7 2009-11-10 BUZ 73L H Avalanche energy EAS = ƒ(Tj) parameter: ID = 7 A, VDD = 50 V RGS = 25 Ω, L = 3.67 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 63 A 130 16 mJ V 110 EAS VGS 100 12 90 0,8 VDS max 0,2 VDS max 10 80 70 8 60 50 6 40 4 30 20 2 10 0 20 0 40 60 80 100 120 ˚C 160 0 Tj 10 20 30 40 50 60 70 80 nC 100 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Rev. 2.2 Rev. 2.4 Page 8 Page 8 2007-01-16 2009-11-10 BUZ 73L H Package Drawing: TO220-3 Rev. 2.4 Page 9 2009-11-10 BUZ 73L H Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 Page 10 2009-11-10