INFINEON PTF180101S

PTF180101
LDMOS RF Power Field Effect Transistor
10 W, 1805–1880 MHz, 1930–1990 MHz
10 W, 2110–2170 MHz
Description
Features
The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization
ensures excellent device lifetime and reliability.
•
EDGE EVM Performance
EVM and Efficiency vs. Output Power
•
VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz
40
Efficiency
3
30
2
20
1
10
•
Efficiency (%)
EVM RMS (Average %)x
4
•
•
•
•
EVM
0
0
25
30
35
Typical EDGE performance
- Average output power = 4.0 W
- Gain = 19.0 dB
- Efficiency = 28%
- EVM = 1.1 %
Typical WCDMA performance
- Average output power = 1.8 W
- Gain = 18.0 dB
- Efficiency = 20%
- ACPR = –45 dBc
Typical CW performance
- Output power at P–1dB = 15 W
- Efficiency = 50%
Integrated ESD protection:
Human Body Model Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
40
PTF180101S
Package 32259
Output Power (dBm)
ESD: Electrostatic discharge sensitive device — observe handling precautions!
RF Characteristics, EDGE Operation at TCASE = 25°C unless otherwise indicated
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 4 W, f = 1989.8 MHz
Characteristic
Symbol
Min
Typ
Max
Units
EVM (RMS)
—
1.1
—
%
Modulation Spectrum @ 400 kHz
ACPR
—
–60
—
dBc
Modulation Spectrum @ 600 kHz
ACPR
—
–70
—
dBc
Gain
Gps
—
19
—
dB
Drain Efficiency
ηD
—
28
—
%
Symbol
Min
Typ
Max
Units
Gain
Gps
18
19
—
dB
Drain Efficiency
ηD
30
33
—
%
Intermodulation Distortion
IMD
—
–30
–28
dBc
Error Vector Magnitude
Two–Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, f = 1990 MHz, tone spacing = 1 MHz
Characteristic
Data Sheet
1
2004-02-03
PTF180101
RF Characteristics, WCDMA Operation at TCASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 135 mA, POUT = 1.8 W,
f = 2170 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.7 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Adjacent Channel Power Ratio
Max
Units
ACPR
—
–45
—
dBc
Gain
Gps
—
18
—
dB
Drain Efficiency
ηD
—
20
—
%
Two–Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 135 mA, POUT = 10 W PEP, f = 2170 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Units
Gain
Gps
—
18
—
dB
Drain Efficiency @ –30 dBc IM3
ηD
—
37
—
%
Intermodulation Distortion
IMD
—
–30
—
dBc
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain–Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
On–State Resistance
VGS = 10 V, VDS = 0.1 A
Operating Gate Voltage
Gate Leakage Current
IDSS
—
—
1.0
µA
RDS(on)
—
0.83
—
Ω
VDS = 28 V, IDQ = 180 mA
VGS
2.5
3.2
4.0
V
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings at TCASE = 25°C unless otherwise indicated
Parameter
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
V
Gate–Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
58
W
0.333
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 10 W CW)
RθJC
3.0
°C/W
Data Sheet
2
2004-02-03
PTF180101
Typical Performance measurements taken in broadband test fixture
EDGE Modulation Spectrum Performance
EVM and Modulation Spectrum Performance
VDD = 28 V, IDQ = 0.18 A, f = 1989.8 MHz
f = 1989.8 MHz, POUT = 3.5 W
50
8
40
600 kHz
-70
30
-80
20
Efficiency
-90
Efficiency (%)
ACPR (dBc)
EVM RMS (Average %) .
400 kHz
-60
10
-100
0
25
30
35
-40
7
400 kHz
6
-60
600 kHz
5
4
-70
-80
EVM
3
-90
2
-100
1
0.00
40
-50
0.05
Output Power (dBm)
0.10
0.15
0.20
0.25
ACPR (dBc)
-50
-110
0.30
Quiscent Drain Current (A)
Output Power, Gain & Efficiency (at P-1dB)
vs. Frequency
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 0.18 A, f = 1990 MHz
VDD = 28 V, IDQ = 0.18 A
60
20
50
25
70
Gain
40
18
30
Efficiency
17
Gain (dB)
19
20
16
32
35
38
41
40
30
20
20
10
Gain
1920
1940
1960
1980
2000
0
2020
Frequency (MHz)
Output Power (dBm)
Data Sheet
Output Pow er
21
18
1900
44
60
50
22
19
10
29
Efficiency
23
Efficiency (%)
Gain (dB)
24
Output Power (dBm),
Efficiency (%)
21
3
2004-02-03
PTF180101
Typical Performance (cont.)
Power Gain vs. Output Power
Broadband Test Fixture Performance
VDD = 28 V, f = 1990 MHz
VDD = 28 V, IDQ = 0.18 A, POUT = 10 W
50
21
15
Power Gain (dB)
IDQ = 0.235 mA
20
IDQ = 0.180 mA
IDQ = 0.135 mA
19
18
0
1
10
40
5
30
-5
Gain
20
-15
10
Return Loss
0
1900
100
1930
Output Power (W)
1960
Return Loss (dB)
Gain (dB), Efficiency (%)
Efficiency
-25
-35
2020
1990
Frequency (MHz)
Output Power vs. Supply Voltage
Broadband Test Fixture Performance
IDQ = 0.18 A, f = 1990 MHz
VDD = 28 V, IDQ = 0.18 A, POUT = 4 W
30
20
20
10
Efficiency
0
Gain
15
-10
10
-20
Return Loss
5
0
1900
Output Power (dBm)
25
Return Loss (dB)
Gain (dB), Efficiency (%)
42
-30
1930
1960
1990
40
39
38
37
-40
2020
22
24
26
28
30
32
Supply Voltage (V)
Frequency (MHz)
Data Sheet
41
4
2004-02-03
PTF180101
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
Gate-Source Voltage vs. Case Temperature
VDD = 28 V, IDQ = 0.18 A, f1 = 1990 MHz, f2 = 1991 MHz
Voltage normalized to typical gate voltage.
Series show current.
1.04
Normalized Bias Voltage
-20
-30
IMD (dBc)
3rd Order
-40
-50
5th
-60
-70
1.02
1.01
0.97 A
1.20 A
1.00
0.99
0.98
0.97
7th
-80
30
0.05 A
0.28 A
0.51 A
0.74 A
1.03
32
34
36
38
40
0.96
-20
42
0
20
40
60
80
100
Case Temperature (°C)
Output Power, PEP (dBm)
Typical Performance, WCDMA Operation
Two–Tone Drive–up
Single–Carrier WCDMA Drive–Up
VDD = 28V, IDQ = 135 mA, f = 2170 MHz,
tone spacing = 1 MHz
VDD = 28 V, IDQ = 135 mA, f = 2170 MHz,
3GPP WCDMA signal, Test Model 1 w/16 DPCH, 67%
clipping, P/A R = 8.7 dB, 3.84 MHz bandwidth
-20
30
-35
25
-40
20
-45
15
IM3
-50
10
-55
-40
Adjacent Channel
Power Ratio (dBc)
-30
20
Efficiency
15
-45
ACPR
-50
10
-55
5
Drain Efficiency (%)
35
Efficiency
Drain Efficiency (%)
Intermodulation
Distortion (dBc)
-25
25
-35
40
5
0
-60
20
25
30
35
40
-60
45
Output Power (dBm), PEP
Data Sheet
0
17
22
27
32
37
Average Output Power (dBm)
5
2004-02-03
PTF180101
RD G
E
Broadband Circuit Impedance Data
D
Z Load
0.1
Z Load
G
S
R
1920
1930
R
jX
7.3
-2.3
4.6
2.4
8.1
-2.2
4.6
2.5
1960
8.3
-2.6
4.5
2.6
1990
6.5
-4.1
4.5
2.5
2000
6.3
-4.0
4.5
2.5
2020
6.2
-3.7
4.6
2.5
Data Sheet
6
0.1
Z Load Ω
jX
0 .0
Z Source Ω
MHz
1920 MHz
ARD L OA D HS T OW
T
G
N
LE
Frequency
2020 MHz
0.2
Z Source
Z0 = 50 Ω
Z Source
1920 MHz
2020 MHz
0. 1
2004-02-03
PTF180101
Reference Circuits
VGG
R1
C1
C5
R2
DUT
C3
l1
l2
VDD
C7
l5
R3
RF_IN
C6
+
C8
l4
l3
l6
l7
C4
C2
l8
RF_OUT
C9
180101_sch
Reference Circuit Schematic
Circuit Assembly Information
DUT
PTF180101
Circuit Board
0.76 mm [.030”] thick, εr = 4.5
LDMOS Transistor
Rogers TMM4, 2 oz. Copper
Microstrip
l1
l2
l3
l4
l5
l6
l7
l8
Dimensions: L x W (mm)
10.92 x 1.37
7.87 x 1.37
11.30 x 12.45
0.64 x 8.86
23.88 x 0.71
18.29 x 8.86
11.81 x 1.37
0.64 x 1.37
Data Sheet
Electrical Characteristics at 1990 MHz
0.133 λ, 50 Ω
0.096 λ, 50 Ω
0.155 λ, 9.5 Ω
0.008 λ, 12.8 Ω
0.286 λ, 70 Ω
0.247 λ, 12.8 Ω
0.145 λ, 50 Ω
0.008 λ, 50 Ω
7
Dimensions: L x W (in.)
0.430 x 0.054
0.310 x 0.054
0.445 x 0.490
0.025 x 0.349
0.940 x 0.028
0.720 x 0.349
0.465 x 0.054
0.025 x 0.054
2004-02-03
PTF180101
Reference Circuits (cont.)
1930–1990 MHz Operation
Component
C1, C3, C5, C8
C2
C4
C6
C7
C9
R1, R2, R3
Description
Capacitor, 10 pF
Capacitor, 1.7 pF
Capacitor, 2.0 pF
Capacitor, 0.1 µF, 50 V
Capacitor, 100 µF, 50 V
Capacitor, 0.6 pF
Resistor, 220 ohm, 1/4 W
Manufacturer
ATC
ATC
ATC
Digi-Key
Digi-Key
ATC
Digi-Key
P/N or Comment
100B 100
100B 1R7
100A 2R0
P4525-ND
P5182-ND
100A 0R6
220QBK
Manufacturer
ATC
ATC
ATC
Digi-Key
Digi-Key
ATC
Digi-Key
P/N or Comment
100B 100
100B 0R8
100A 2R2
P4525-ND
P5182-ND
100A 1R0
220QBK
2.11–2.17 GHz Operation
Component
C1, C3, C5, C8
C2
C4
C6
C7
C9
R1, R2, R3
Description
Capacitor, 10 pF
Capacitor, 0.8 pF
Capacitor, 2.2 pF
Capacitor, 0.1 µF, 50 V
Capacitor, 100 µF, 50 V
Capacitor, 1.0 pF
Resistor, 220 ohm, 1/4 W
Reference circuit assembly diagramt1 (not to scale)
1 Gerber files for this circuit are available upon request.
Data Sheet
8
2004-02-03
PTF180101
Ordering Information
Type
PTF180101S
Package Outline
32259
Package Description
Thermally enhanced, surface mount
Marking
PTF180101S
Package Outline Specifications
Package 32259
1.78
[.070]
60° X 6.60
[60° X .260]
2X 3.30
[.130]
2X 0.20±0.03
[.008±.001]
C
L
4X R0.25
[R.010]
MAX.
D
2X 1.27
[.050]
1.02 [0.040]
0.51 [0.020]
2X 3.30
[.130]
6.86
[.270]
C
L
4X 0.51
[.020]
G
4X 0.25 MAX
[.010]
10.16±0.25
[.400±.010]
2X 1.65±0.51
[.065±.020]
LEAD COPLANARITY
BOTTOM OF LEAD
TO BOTTOM OF PACKAGE
.000±.002 (TYP)
6.86
[.270]
6.48
[.255] SQ
0.74±0.05
[.028±.002]
2.99 ±0.38
[1.14 ±.010]
S
6.35
[.250] SQ
0°-7°
DRAFT ANGLE
H-32259-2-1-2307
Notes: Unless otherwise specified
1.
2.
3.
4.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
Primary dimensions are mm. Alternate dimensions are inches.
Pins: D = drain, S = source, G = gate
Lead thickness: 0.21 ± 0.03 [.008 ± .001]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
9
2004-02-03
PTF180101
Revision History:
Previous Version:
Page
1, 5, 7
2004-02-03
none
Data Sheet
Subjects (major changes since last revision)
Add information about WCDMA operation
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or +1 408 776 0600 International
Edition 2004-02-03
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
© Infineon Technologies AG 2003.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
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Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
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