PHILIPS BLW97

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW97
HF power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
HF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor designed for use in class-A,
AB and B operated high-power
industrial and military transmitting
equipment in the h.f. band.
BLW97
severe load-mismatch conditions. All
leads are isolated from the flange.
The transistors are supplied in
matched hFE groups.
The transistor offers excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is made to withstand
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF OPERATION
s.s.b.
(class-AB)
VCE
V
IC(ZS)
A
f
MHz
PL
W
Gp
dB
ηdt
%
d3
dB
d5
dB
28
0,1
1,6 − 28
175 (PEP)
> 11,5
> 40
< −30
< −30
PIN CONFIGURATION
PINNING - SOT121B.
PIN
handbook, halfpage 4
1
3
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
2
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF power transistor
BLW97
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (peak value)
VBE = 0
VCESM
max.
65 V
open base
VCEO
max.
33 V
VEBO
max.
4 V
average
IC(AV)
max.
15 A
peak value; f > 1 MHz
ICM
max.
50 A
Ptot(d.c.)
max.
190 W
Ptot(rf)
max.
230 W
Emitter-base voltage (open collector)
Collector current
Total d.c. power dissipation at Th = 25°C
R.F. power dissipation
f > 1 MHz; Th = 25°C
Storage temperature
Tstg
Operating junction temperature
Tj
MGP703
102
handbook, halfpage
−65 to + 150 °C
max.
MGP704
350
handbook, halfpage
Ptot
(W)
IC
(A)
250
Th = 70 °C
10
ΙΙΙ
Tmb = 25 °C
ΙΙ
150
1
200 °C
1
10
VCE (V)
Ι
50
102
0
40
80
Th (°C)
120
I Continuous d.c. operation
II Continuous r.f. operation (f > 1 Mhz).
III Short-time operation during mismatch; (f > 1 MHz).
Fig.2 D.C. SOAR.
Fig.3
Power/temperature derating curves.
THERMAL RESISTANCE
(dissipation = 120 W; Th = 25 °C i.e. Tmb = 49 °C)
From junction to mounting base
(d.c. dissipation)
Rth j-mb(dc)
=
0,63 K/W
Rth j-mb(rf)
=
0,48 K/W
Rth mb-h
=
0,20 K/W
From junction to mounting base
(r.f. dissipation)
From mounting base to heatsink
August 1986
3
Philips Semiconductors
Product specification
HF power transistor
BLW97
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector-emitter breakdown voltage
VBE = 0; IC = 50 mA
V(BR)CES
>
65 V
IC = 100 mA; open base
V(BR)CEO
>
33 V
V(BR)EBO
>
4 V
ICES
<
20 mA
open base
ESBO
>
20 mJ
RBE = 10 Ω
ESBR
>
20 mJ
typ.
30
Emitter-base breakdown voltage
IE = 20 mA; open collector
Collector cut-off current
VCE = 33 V; VBE = 0
Second breakdown energy; L = 25 mH; f = 50 Hz
D.C. current gain(1)
IC = 10 A; VCE = 5 V
hFE
15
hFE1/hFE2
<
1,2
VCEsat
typ.
2,4 V
−IE = 10 A; VCB = 28 V
fT
typ.
230 MHz
−IE = 20 A; VCB = 28 V
fT
typ.
235 MHz
Cc
typ.
380 pF
Cre
typ.
235 pF
Ccf
typ.
4,5 pF
D.C. current gain ratio of matched
IC = 10 A; VCE = 5 V
Collector-emitter saturation
to 50
devices(1)
voltage(1)
IC = 25 A; IB = 5 A
Transition frequency at f = 100 MHz(2)
Collector capacitance at f = 1 MHz
IE = ie = 0; VCB = 28 V
Feedback capacitance at f = 1 MHz
IC = 0; VCE = 28 V
Collector-flange capacitance
Notes
1. Measured under pulse conditions: tp = 500 µs.
2. Measured under pulse conditions: tp = 300 µs; δ = 0,02.
August 1986
4
Philips Semiconductors
Product specification
HF power transistor
BLW97
MGP705
50
MGP706
260
handbook, halfpage
handbook, halfpage
VCB = 28 V
fT
(MHz)
VCE = 28 V
hFE
220
15 V
40
typ
180
15 V
5V
30
140
typ
5V
20
100
0
10
20
IC (A)
30
0
Fig.4 Tj = 25 °C.
20
Fig.5 Tj = 25 °C; f = 100 MHz; tp = 300 µs.
MGP707
1000
−IE (A)
10
MGP708
10
handbook, halfpage
handbook, halfpage
Cc
(pF)
IC
(A)
800
1
Th = 70 °C
25 °C
600
10−1
typ
typ
400
10−2
500
200
0
20
VCB (V)
40
Fig.6 IE = ie = 0; f = 1 MHz; Tj = 25 °C.
August 1986
900
VBE (mV)
Fig.7 VCE = 28 V.
5
1300
Philips Semiconductors
Product specification
HF power transistor
BLW97
APPLICATION INFORMATION
R.F. performance in s.s.b. class-AB operation (linear power amplifier).
VCE = 28 V; Th = 25 °C; f1 = 28,000 MHz; f2 = 28,001 MHz.
OUTPUT POWER
Gp
ηdt
IC
d3(1)
d5(1)
IC(ZS)
W
dB
%
A
dB
dB
A
>
175 (PEP)
>
11,5
typ. 13,0
<
40
typ. 50
<
7,8
−30
<
typ. −34
typ. 6,3
−30
0,1
typ. −38
Note
1. The stated intermodulation distortion levels are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
C10
handbook, full pagewidth
L4
C1
50 Ω
L1
50 Ω
C11
R1
T.U.T.
C2
L3
C6
C14
C3
C12
C4
C7
R2
L2
C8
C9
R3
C5
L5
VBB
VCC
Fig.8 Class-AB (s.s.b.) test circuit.
August 1986
6
MGP709
C13
Philips Semiconductors
Product specification
HF power transistor
BLW97
List of components:
C1
= 47 pF (500 V) multilayer ceramic chip capacitor(1)
C2
= 100 pF film dielectric trimmer
C3
= 2 × 130 pF (300 V) multilayer ceramic chip capacitors in parallel(1)
C4
= 280 pF film dielectric trimmer
C5
= 10 nF (50 V) multilayer ceramic chip capacitor 2222 856 13103
C6
= 2 × 180 pF (300 V) multilayer ceramic chip capacitors in parallel(1)
C7
= 100 nF (50 V) multilayer ceramic chip capacitor 2222 856 48104
C8
= 10 nF (50 V) multilayer ceramic chip capacitor 2222 856 13103
C9
= 2,2 µF - 63 V solid aluminium electrolytic capacitor
C10 = 5 × 82 pF (500 V) multilayer ceramic chip capacitors in parallel(1)
C11 = 250 pF air dielectric trimmer
C12 = 5 × 33 pF ceramic feed-through capacitors mounted in parallel on a brass plate
C13 = 100 pF air dielectric trimmer
C14 = 3 × 91 pF (500 V) multilayer ceramic chip capacitors in parallel(1)
R1
= 0,7 Ω - 7 W (7 × 4,7 Ω - 1 W carbon resistors in parallel)
R2
= 27 Ω - 0,25 W carbon resistor
R3
= 4,7 Ω - 0,25 W carbon resistor
L1
= 73 nH; 4 turns Cu wire (1,5 mm); int. dia. 7 mm; length 9,4 mm; leads 2 × 5 mm
L2
= Ferroxcube wide-band h.f. choke grade 3B (cat. no. 4312 020 36640); 6 leads in parallel
L3
= 70,4 nH; 4 turns Cu wire (2 mm); int. dia. 7 mm; length 14,8 mm; leads 2 × 5 mm
L4
= 83,5 nH; 4 turns Cu wire (2 mm); int. dia. 8 mm; length 15 mm; leads 2 × 5 mm
L5
= Ferroxcube wide-band h.f. choke grade 3 B (cat. no. 4312 020 36640) with 6 leads in parallel
Note
1. American Technical Ceramics capacitor or capacitor of same quality.
August 1986
7
Philips Semiconductors
Product specification
HF power transistor
BLW97
MGP710
−20
MGP711
16
handbook, halfpage
handbook, halfpage
d3, d5
ηc
GP
(dB)
d3
80
dt
(%)
GP
(dB)
typ
12
d5
60
ηc
dt
−40
typ
8
40
4
20
−60
−80
0
0
120
PL (W) P.E.P.
240
VCE = 28 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C.
Fig.9
0
0
120
PL (W) P.E.P.
240
VCE = 28 V; IC(ZS) = 0,1 A; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C.
Intermodulation distortion (see note on
preceding page).
Fig.10 Power gain and double-tone efficiency.
RUGGEDNESS
The BLW97 is capable of withstanding full load mismatch
(VSWR = 50 through all phases) up to 150 W (P.E.P.) or a
load mismatch (VSWR = 5 through all phases) up to
175 W (P.E.P.) under the following conditions:
MGP712
30
handbook, halfpage
GP
(dB)
VCE = 28 V; f = 28 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W.
Figures 11 and 12 t typical curves which are valid for one
transistor of a push-pull amplifier in s.s.b. class-AB
operation.
20
typ
10
1
10
f (MHz)
VCE = 28 V; IC(ZS) = 0,1 A;
PL = 175 W(PEP); Th = 25 °C;
ZL = 1,55 Ω
Fig.11 Power gain.
August 1986
8
102
Philips Semiconductors
Product specification
HF power transistor
BLW97
MGP713
4
ri, xi
(Ω)
ri
ri, −xi
(Ω)
MGP714
1
handbook, halfpage
handbook, halfpage
xi
0.5
ri
−xi
2
typ
typ
0
0
1
10
f (MHz)
−0.5
25
102
f (MHz)
125
VCE = 28 V; PL = 175 W; Th = 25 °C;
class-B operation.
VCE = 28 V; IC(ZS) = 0,1 A;
PL = 175 W(PEP); Th = 25 °C;
ZL = 1,55 Ω
Fig.12 Input impedance (series components).
MGP715
3
handbook, halfpage
Fig.13 Input impedance (series components).
1.5
RL
2
typ
MGP716
20
handbook, halfpage
XL
(Ω)
RL
(Ω)
1
75
GP
(dB)
1.0
15
0.5
10
typ
XL
0
25
0
75
f (MHz)
5
125
25
VCE = 28 V; PL = 175 W; Th = 25 °C;
class-B operation.
f (MHz)
VCE = 28 V; PL = 175 W; Th = 25 °C;
class-B operation.
Fig.14 Load impedance (series components).
August 1986
75
Fig.15 Power gain.
9
125
Philips Semiconductors
Product specification
HF power transistor
BLW97
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT121B
D
A
F
q
C
B
U1
c
H
b
L
4
α
w2 M C
3
A
D1
U2
p
U3
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
7.27
6.17
5.82
5.56
0.16
0.10
inches
0.286
0.243
0.229 0.006
0.219 0.004
OUTLINE
VERSION
D
D1
12.86 12.83
12.59 12.57
F
H
L
p
Q
q
U1
U2
U3
w1
w2
2.67
2.41
28.45
25.52
7.93
6.32
3.30
3.05
4.45
3.91
18.42
24.90
24.63
6.48
6.22
12.32
12.06
0.51
1.02
0.175
0.725
0.154
0.98
0.97
0.255
0.245
0.485
0.475
0.02
0.04
0.506 0.505 0.105 1.120
0.496 0.495 0.095 1.005
45°
0.312 0.130
0.249 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT121B
August 1986
α
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
10
Philips Semiconductors
Product specification
HF power transistor
BLW97
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
11