QTP145202 CCG2 Device Family,S8PR2-10R Technology, Fab 4 (CMI).pdf

Document No. 001-98254 Rev. *B
ECN #: 5085143
Cypress Semiconductor
Product Qualification Report
QTP # 145202 VERSION*B
January 2016
CCG2 Device Family
S8PR2-10R Technology, Fab 4 CMI
CYPD2103**
CYPD2104**
CYPD2105**
USB Type-C Controller Gen2 with Power Delivery
CYPD2122**
CYPD2134**
FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Josephine Pineda (JYF)
Reliability Engineer
Reviewed By:
Rene Rodgers (RT)
Reliability Engineer MTS
Approved By:
Don Darling (DCDA)
Reliability Director
Company Confidential
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Page 1 of 18
Document No. 001-98254 Rev. *B
ECN #: 5085143
PRODUCT QUALIFICATION HISTORY
QTP
Number
Description of Qualification Purpose
Date
083401
Qualify SONOS S8DI-5R Technology in Fab 4 using PSoC 8C20066BC
Krypton Device
Jan. 2009
145202
Qualify CCG2 Device (7C64100AC), S8PR2-10R Technology in Fab 4
May 2015
151909
153402
Qualify CCG2 Rev. *A Silicon Device (7C64100AC), S8PF-10R
Technology in Fab 4
Qualify CCG2 Rev. *B Silicon Device (7C64100AC), S8PF-10R
Technology in Fab 4
Company Confidential
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Page 2 of 18
Oct. 2015
Oct. 2015
Document No. 001-98254 Rev. *B
ECN #: 5085143
PRODUCT DESCRIPTION (for qualification)
Qualification Purpose: To qualify CCG2 Device (7C64100AC), S8PR2-10R Technology in Fab 4
Marketing Part #:
CYPD2103**/CYPD2104**/CYPD2105**/CYPD2122**/CYPD2134**
Device Description:
USB Type-C Controller Gen2 with Power Delivery
Cypress Division:
Cypress Semiconductor – Data Communication Division
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
5
Metal Composition:
Metal 1: 100° Ti / 3200° Al 0.5%Cu / 300° TiW
Metal 2: 100° Ti/3200° Al 0.5% Cu/350° TiW
Metal 3: 150° Ti / 7200° Al 0.5%Cu / 350° TiW
Metal 4: 150° Ti / 7200° Al 0.5%Cu / 350° TiW
Metal 5: 300° Ti / 12000° Al 0.5%Cu / 300A TiW
Passivation Type and Thickness:
1,000A NFUSOX /6,000A Nitride
Generic Process Technology/Design Rule (-drawn): S8PIR-10R
Gate Oxide Material/Thickness (MOS):
SiO2 / 32A & SiO2 / 120A
Name/Location of Die Fab (prime) Facility:
Fab 4, CMI-Minnesota
Die Fab Line ID/Wafer Process ID:
S8PR2-10
PACKAGE AVAILABILITY
PACKAGE
ASSEMBLY FACILITY SITE
WIRE MATERIAL
QTP NUMBER
20-Ball WLCSP
DT-Philippines
-
145201
14-Lead DFN
ASE-Taiwan (G)
0.8 mil CuPd
152007
ASE-Taiwan (G)
0.8 mil CuPd
153006
CML-RA
0.8 mil CuPd
153007
24-Lead QFN
Company Confidential
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Page 3 of 18
Document No. 001-98254 Rev. *B
ECN #: 5085143
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
FN20B
20-Ball Wafer Level Chip Scale Package (WLCSP)
(1.63x2.03x0.55mm)
Die Backside Preparation Method:
Backgrind
Die Separation Method:
Saw
Solder Ball/Bump Material:
SAC405
Bonding Method:
Bump/ RDL
Bond Diagram Designation:
001-95726
Thermal Resistance Theta JA °C/W:
66°C/W
Package Cross Section Yes/No:
N/A
Assembly Process Flow:
001-69882
Name/Location of Assembly (prime) facility:
DT-Philippines
MSL Level
1
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
DT-Philippines
Company Confidential
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Page 4 of 18
Document No. 001-98254 Rev. *B
ECN #: 5085143
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
Package Outline, Type, or Name:
Mold Compound Name/Manufacturer:
LH14A
14-Lead Dual-Flat No Lead (DFN), 2.5 x 3.5 x 0.6mm
EME-G700LA/Sumitomo
Mold Compound Flammability Rating:
UL-94 V-0
Oxygen Rating Index: >28%
54%
Leadframe Designation
FMP
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
Pure Sn
Die Backside Preparation
Method/Metallization:
Backgrind
Die Separation Method:
Saw
Die Attach Supplier:
Furukawa
Die Attach Material:
NEX-130
Bond Diagram Designation:
001-97348
Wire Bond Method:
Thermosonic
Wire Material/Size:
CuPd/ 0.8 mil
Thermal Resistance Theta JA °C/W:
31°C/W
Package Cross Section Yes/No:
No
Assembly Process Flow:
49-41999
Name/Location of Assembly (prime) facility:
ASE-Taiwan (G)
MSL Level
3
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
ASE-Taiwan (G)
Company Confidential
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Page 5 of 18
Document No. 001-98254 Rev. *B
ECN #: 5085143
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
LQ24A
Package Outline, Type, or Name:
Quad Flat No Lead (QFN), 4x4x0.6mm
Mold Compound Name/Manufacturer:
EME-G700LA/Sumitomo
Mold Compound Flammability Rating:
UL-94 V-0
Oxygen Rating Index: >28%
54%
Lead Frame Designation:
FMP
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
Pure Sn
Die Backside Preparation Method/Metallization:
Backgrind
Die Separation Method:
Saw Process
Die Attach Supplier:
Hitachi
Die Attach Material:
FH-900 Die Attach Film (DAF)
Bond Diagram Designation
001-89835
Wire Bond Method:
Thermosonic
Wire Material/Size:
0.8 mil /CuPd
Thermal Resistance Theta JA C/W:
18.36 C /W
Package Cross Section Yes/No:
Yes
Assembly Process Flow:
001-89390
Name/Location of Assembly (prime) facility:
ASE-Taiwan (G)
MSL Level
3
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
ASE-Taiwan (G)
Company Confidential
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Page 6 of 18
Document No. 001-98254 Rev. *B
ECN #: 5085143
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
LQ24A
Package Outline, Type, or Name:
Quad Flat No Lead (QFN), 4x4x0.6mm
Mold Compound Name/Manufacturer:
GE7470L-A/Nitto
Mold Compound Flammability Rating:
V-0 UL94
Oxygen Rating Index: >28%
54%
Lead Frame Designation:
FMP
Lead Frame Material:
Copper
Lead Finish, Composition / Thickness:
NiPdAu
Die Backside Preparation Method/Metallization:
Backgrind
Die Separation Method:
Saw Process
Die Attach Supplier:
Henkel
Die Attach Material:
QMI 519
Bond Diagram Designation
001-93281
Wire Bond Method:
Thermosonic
Wire Material/Size:
0.8 mil /CuPd
Thermal Resistance Theta JA C/W:
18.36 C /W
Package Cross Section Yes/No:
Yes
Assembly Process Flow:
11-21099
Name/Location of Assembly (prime) facility:
CML-RA
MSL Level
3
Reflow Profile
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
CML-RA
Company Confidential
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Page 7 of 18
Document No. 001-98254 Rev. *B
ECN #: 5085143
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS
Stress/Test
Test Condition (Temp/Bias)
Electrostatic Discharge
Charge Device Model (ESD-CDM)
Electrostatic Discharge
Human Body Model (ESD-HBM)
Electrostatic Discharge
Machine Model (ESD-MM)
J-STD-020
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
200C, 4hrs
MIL-STD-883, Method 883-2011
150°C, No Bias
JESD22-A117 and JESD22-A103
125°C, 8.5V
JESD78
500V/1,000V/1,250V
JESD22-C101
1,100V/2,200V /3,300V
JESD22, Method A114
200V, 220V, 275V, 330V
JESD22-A115
Endurance Test
MIL-STD-883, Method 883-1033/ JESD22-A117
Acoustic Microscopy
Age Bond Strength
Data Retention
Dynamic Latch-up
High Accelerated Saturation Test (HAST)
High Temperature Operating Life
Early Failure Rate
High Temperature Operating Life
Early Failure Rate, Regulator On
High Temperature Operating Life
Latent Failure Rate
High Temperature Steady State life
JEDEC STD 22-A110: 130°C, 85% RH, 5.25V
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
Dynamic Operating Condition, Vcc Max=2.1V/1.95V/2.268V, 150°C
JESD22-A-108
Dynamic Operating Condition, Vcc Max=5V, 125°C/150°C
Dynamic Operating Condition, Vcc Max=1.95V, 150°C
JESD22-A-108
Dynamic Operating Condition, Vcc Max=2.1V,150°C
JESD22-A-108
Static Operating Condition, Vcc Max=2.1V, 150°C
JESD22-A-108
Result
P/F
P
P
P
P
P
P
P
P
P
P
P
P
P
Internal Visual
MIL-STD-883-2014
P
Low Temperature Operating Life
Dynamic Operating Condition, -30°C, 2.1V
JESD22-A108
P
Low Temperature Storage Life
-40°C, No Bias
P
Pressure Cooker
JESD22-A102:121°C /100%RH, 15 PSIG
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
P
SEM Analysis
MIL-STD-883, Method 2018
P
Static Latch-up
Temperature Cycle
85C/125C, +/-140mA
85C, +/- 200mA, +/-300mA
JESD 78
MIL-STD-883, Method 1010, Condition C, -65°C to 150°C
Precondition: JESD22 Moisture Sensitivity Level
(192 Hrs., 30 C, 60% RH, 260C Reflow)
Company Confidential
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Page 8 of 18
P
P
Document No. 001-98254 Rev. *B
ECN #: 5085143
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
Failure Rate
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
High Temperature Operating Life
Early Failure Rate
3,042 Devices
1
N/A
N/A
329 PPM
High Temperature Operating Life
Long Term Failure Rate
585,000 DHRs
0
0.7
170
9 FIT
1
2
3
(1)
(2)
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate.
Thermal Acceleration Factor is calculated from the Arrhenius equation
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
-5
K = Boltzmann’s constant = 8.62x10 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the
device at use conditions.
(1)
(2)
Early Failure Rate was computed from QTP# 145202
Long Term Failure Rate was computed from QTP# 083401
Company Confidential
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Page 9 of 18
Document No. 001-98254 Rev. *B
ECN #: 5085143
Reliability Test Data
QTP #: 083401
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
Failure Mechanism
STRESS: ACOUSTIC, MSL3
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA COMP
15
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA COMP
15
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA COMP
15
0
STRESS: AGE BOND STRENGTH
CY8C20566 (8C20566AC)
4827949
610844164
CML-R
COMP
3
0
CY8C20466 (8C20466AC)
4804681
610822808
Malaysia-CA COMP
3
0
CY8C20666 (8C20666AC)
4836589
610852813
Malaysia-CA COMP
3
0
STRESS: DATA RETENTION, PLASTIC, 150C
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
500
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
1000
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
500
78
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
1000
78
0
CY8C20566 (8C20566AC)
4836589
610851914
CML-R
500
78
0
CY8C20566 (8C20566AC)
4836589
610851914
CML-R
1000
78
0
CY8C20566 (8C20566AC)
4810486
610830786
CML-R
168
77
0
CY8C20566 (8C20566AC)
4815537
610835437
CML-R
168
77
0
CY8C20566 (8C20566AC)
4827949
610844164
CML-R
168
79
0
CY8C20566 (8C20566AC)
4835945
610848270
CML-R
168
78
0
CY8C20566 (8C20566AC)
4836589
610851914
CML-R
168
76
0
STRESS: ENDURANCE
STRESS:
ESD-CHARGE DEVICE MODEL, (500V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
500
9
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
500
9
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
500
9
0
N/A
N/A
COMP
1
0
STRESS:
SEM CROSS SECTION
CY8C20066 (8C20066AC)
4810486
STRESS: STATIC LATCH-UP (85C, 8.25V, +/-200mA)
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA COMP
6
0
CY8C20666 (8C20666AC)
4836589
610852813
Malaysia-CA COMP
6
0
CY8C20666 (8C20666AC)
4837410
410.23.02
Promex
COMP
6
0
Company Confidential
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Page 10 of 18
Document No. 001-98254 Rev. *B
ECN #: 5085143
Reliability Test Data
QTP #: 083401
Device
Fab Lot # Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (2,200V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
2200
8
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
2200
8
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
2200
8
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114, (3,300V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
3300
3
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
3300
3
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
3300
3
0
STRESS: ESD-MACHINE MODEL, (200V)
CY8C20236A (8C202662A) 4126494
611143319
KOREA-L
200
5
0
CY8C20236A (8C202662A) 4125077
611143627
PHIL-MB
200
5
0
STRESS: ESD-MACHINE MODEL, (220V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
220
6
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
220
6
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
220
6
0
STRESS: ESD-MACHINE MODEL, (275V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
275
3
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
275
3
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
275
3
0
STRESS: ESD-MACHINE MODEL, (330V)
CY8C20566 (8C20566AC)
4810486
610830371
CML-R
330
3
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
330
3
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
330
3
0
STRESS: DYNAMIC LATCH-UP (125C, 8.5V)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA COMP
5
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA COMP
5
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA COMP
5
0
Company Confidential
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Page 11 of 18
Document No. 001-98254 Rev. *B
ECN #: 5085143
Reliability Test Data
QTP #: 083401
Device
Fab Lot # Assy Lot #
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max)
CY8C20566 (8C20566AC)
4827949
610844164
CML-R
48
1002
0
CY8C20566 (8C20566AC)
4815537
610835437
CML-R
48
1008
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
48
1004
1
CY8C20466 (8C20466AC)
4836589
610851747
Malaysia-CA
48
1004
0
STRESS:
Read NV Latch (1)
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 5V, Vcc Max)
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
48
45
0
CY8C20566 (8C20566AC)
4835945
610848270
CML-R
48
45
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (125C, 5V, Vcc Max)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
96
45
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.1V, Vcc Max)
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
80
390
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
500
390
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
80
390
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
500
390
0
CY8C20466 (8C20466AC)
4836589
610851747
Malaysia-CA
80
390
0
CY8C20466 (8C20466AC)
4836589
610851747
Malaysia-CA
500
390
0
STRESS: HIGH TEMP STEADY STATE LIFE TEST (150C, 2.1V)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
80
77
0
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
168
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
80
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
168
77
0
CY8C20566 (8C20566AC)
4835945
610848270
CML-R
80
77
0
CY8C20566 (8C20566AC)
4835945
610848270
CML-R
168
77
0
STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 2.1V
CY8C20566 (8C20566AC)
4815537
610835437
CML-R
500
77
0
CY8C20566 (8C20566AC)
4835945
610848270
CML-R
500
77
0
(1)
Destroyed during failure analysis
Company Confidential
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Page 12 of 18
Document No. 001-98254 Rev. *B
ECN #: 5085143
Reliability Test Data
QTP #: 083401
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
128
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
128
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
256
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
128
77
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
168
77
0
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
333
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
168
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
288
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
168
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
288
77
0
STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3)
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
500
77
0
CY8C20466 (8C20466AC)
4810486
610828990
Malaysia-CA
1000
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
500
77
0
CY8C20466 (8C20466AC)
4815537
610834184
Malaysia-CA
1000
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
500
77
0
CY8C20466 (8C20466AC)
4835945
610847274
Malaysia-CA
1000
77
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 13 of 18
Document No. 001-98254 Rev. *B
ECN #: 5085143
Reliability Test Data
ER114031
Device
Fab Lot # Assy Lot #
Assy Lot
Duration
Samp
Rej
Failure Mechanism
STRESS: LOW TEMPERATURE STORAGE, -40C, No Bias
CY8C20236A (8C202662A) 4137730
611155459
L-KOREA
1000
100
0
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 14 of 18
Document No. 001-98254 Rev. *B
ECN #: 5085143
Reliability Test Data
QTP #: 145202
Device
STRESS:
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
Rej
ESD-CHARGE DEVICE MODEL
CYPD2103 (7F64100A)
4452163
611504790
DT-PHIL
500
9
0
CYPD2103 (7F64100A)
4452163
611504790
DT-PHIL
1000
3
0
CYPD2103 (7F64100A)
4452163
611504790
DT-PHIL
1250
3
0
STRESS:
Failure Mechanism
ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114
CYPD2103 (7F64100A)
4452163
611504790
DT-PHIL
1100
3
0
CYPD2103 (7F64100A)
4452163
611504790
DT-PHIL
2200
8
0
CYPD2103 (7F64100A)
4452163
611504790
DT-PHIL
3300
3
0
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 1.95V, Vcc Max)
CYPD2103 (7CP64100A)
4452163
611505270
CML-RA
48
1505
1
Scan Non-Visual Failure
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.268V, Vcc Max)
CYPD2103 (7CP64100A)
STRESS:
4452194
611510023
CML-RA
48
1537
0
HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 1.95V, Vcc Max)
CYPD2103 (7CP64100A)
4452163
611505270
CML-RA
48
50
0
DT-PHIL
COMP
6
0
DT-PHIL
COMP
3
0
DT-PHIL
COMP
3
0
DT-PHIL
COMP
3
0
STRESS: STATIC LATCH-UP (85C, +/-140mA)
CYPD2103 (7F64100A)
4452163
611504790
STRESS: STATIC LATCH-UP (85C, +/-200mA)
CYPD2103 (7F64100A)
4452163
611504790
STRESS: STATIC LATCH-UP (85C, +/-300mA)
CYPD2103 (7F64100A)
4452163
611504790
STRESS: STATIC LATCH-UP (125C, +/-140mA)
CYPD2103 (7F64100A)
4452163
611504790
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 15 of 18
Document No. 001-98254 Rev. *B
ECN #: 5085143
Reliability Test Data
QTP #: 151909
Device
Fab Lot #
YIELD:
Duration
Samp
Rej
4512819
611519415/16/17/18/19
DT-PHILS
COMP
EQUIVALENT
4452194
N/A
N/A
COMP
EQUIVALENT
4512819
N/A
N/A
COMP
EQUIVALENT
Failure Mechanism
E-TEST
7C64100AC
YIELD:
Assy Loc
BACKEND
7F64100AC
YIELD:
Assy Lot #
SORT
7C64100AC
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 16 of 18
Document No. 001-98254 Rev. *B
ECN #: 5085143
Reliability Test Data
QTP #: 153402
Device
Fab Lot #
Assy Lot #
Assy Loc Duration
Samp
7CP64101BC
4525553
611533168
CML-RA
COMP
EQUIVALENT
7F64101BC
4525553
611533490
DT-PHILS
COMP
EQUIVALENT
4525553
N/A
N/A
COMP
EQUIVALENT
4523565/4525220/
N/A
N/A
COMP
EQUIVALENT
YIELD:
YIELD:
Failure Mechanism
BACKEND
E-TEST
7C64100AC
YIELD:
Rej
SORT
7C64100AC
4192152/4525553
Company Confidential
A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision.
Page 17 of 18
Document No. 001-98254 Rev. *B
ECN #: 5085143
Document History Page
Document Title:
Document Number:
Rev. ECN
No.
QTP#145202: CCG2 DEVICE FAMILY,S8PR2-10R TECHNOLOGY, FAB 4 (CMI)
001-98254
Orig. of
Change
**
4810887 JYF
JYF
*A
4869566
DCON
*B
5085143 JYF
Description of Change
Initial spec release.
Added 24L QFN assembled at CML-RA and ASE-Taiwan as package
option for CCG2 device (QTP# 153006/QTP#153007).
Removed distribution and posting.
Added CCG2 Rev.*A (QTP# 151909) and Rev.*B (QTP# 153402)
qualification data.
Company Confidential
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Page 18 of 18