Document No.001-88089 Rev. *A ECN # 4432506 Cypress Semiconductor Product Qualification Report QTP# 090809 VERSION *A July 2014 enCoRe™ Device Family S8DI-5R Technology, Fab 4 CY7C604XX enCoRe™ V Low Voltage Microcontroller FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Honesto Sintos Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No.001-88089 Rev. *A ECN #4432506 PRODUCT QUALIFICATION HISTORY Qual Report Description of Qualification Purpose Date Comp 083401 Qualify SONOS S8DI-5R Technology in Fab 4 using PsoC 8C20066BC Krypton Device Jan 09 090809 Qualify CY7C60445 Device on S8DI-5R Technology Aug 09 091801 Qualify 2um Top Metal-3 Process on S8DI-5R Technology at CMI Sep 09 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Document No.001-88089 Rev. *A ECN #4432506 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: enCoRe V Device Qualification on S8DI-5R Technology in Fab4 CY7C60445, CY7C60413, CY7C60455, CY7C60456, CY7C60400 Marketing Part #: Device Description: Low Voltage Microcontroller Cypress Division: Cypress Semiconductor - Consumer and Computation Division TECHNOLOGY/FAB PROCESS DESCRIPTION S4AD-5 Number of Metal Layers: 3 Metal Composition: Metal 1: 100A Ti/3,200A Al 0.5% Cu/300A TiW Metal 2: 100A Ti/3,200A Al 0.5% Cu/300A TiW Metal 3: Pad: 500A Ti / 20000A Al 0.5% Cu Non Pad: 500A Ti / 20000A Al 0.5%Cu / 300 A TiW Passivation Type and Materials: 4,000A TEOS /7,000A Si3N4 Generic Process Technology/Design Rule (µ- 1P3M, 0.15 µm Gate Oxide Material/Thickness (MOS): SiO2 / 110A & SiO2 / 32A Name/Location of Die Fab (prime) Facility: Fab 4, CMI-Minnesota Die Fab Line ID/Wafer Process ID: S8DI-5R PACKAGE AVAILABILITY PACKAGE ASSEMBLY SITE FACILITY 24, 32, 48-Lead QFN MALAYSIA-CA , AMKOR-MB 16-Lead QFN AMKOR-MB 48-Lead SSOP CML-RA Note: Package Qualification details upon request. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Document No.001-88089 Rev. *A ECN #4432506 MAJOR PACKAGE INFORMATION FOR THIS QUALIFICATION Package Designation: LQ32 Package Outline, Type, or Name: 32-Quad Flat No-Lead (QFN) Mold Compound Name/Manufacturer: EME-G770 / Sumitomo Mold Compound Flammability Rating: V-0 PER UL-94 Oxygen Rating Index: None Lead Frame Material: Copper Lead Finish, Composition / Thickness: NiPdAu Die Backside Preparation Method/Metallization: Backgrind Die Separation Method: 100% Saw Die Attach Supplier: Henkel Die Attach Material: QMI-519 Die Attach Method: Epoxy Bond Diagram Designation: 001-42703 Wire Bond Method: Thermosonic Wire Material/Size: Au. 1.0mil Thermal Resistance Theta JA °C/W: 22.17 Package Cross Section Yes/No: N/A Assembly Process Flow: 001-11286 Name/Location of Assembly (prime) facility: Carsem-Malaysia MSL Level 3 Reflow Profile 260C ELECTRICAL TEST / FINISH DESCRIPTION Test Location: CML-R Note: Please contact a Cypress Representative for other packages availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 11 Document No.001-88089 Rev. *A ECN #4432506 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT Stress/Test Test Condition (Temp/Bias) Result P/F High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc Max=2.1V, 150°C High Temperature Operating Life Latent Failure Rate Dynamic Operating Condition, Vcc Max=2.1V, 150°C High Temperature Steady State life 150°C, 2.1V, Vcc Max P Low Temperature Operating Life -30°C, 2.1V 130°C, 5.25V, 85%RH P Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C P High Accelerated Saturation Test (HAST) Temperature Cycle Pressure Cooker P P MIL-STD-883C, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C P 121°C, 100%RH, 15 Psig Precondition: JESD22 Moisture Sensitivity Level 3 192 Hrs, 30C/60%RH+3IR-Reflow, 260°C+0, -5°C P Acoustic Microscopy J-STD-020 P Age Bond Strength 200C, 4hrs MIL-STD-883, Method 883-2011 P Current Density Meets the technology device level reliability specifications P Data Retention 150°C ± 5°C No Bias P Dynamic Latch-up 125C, 8.5V P Electrostatic Discharge Human Body Model (ESD-HBM) 2,200V JESD22, Method A114-B P Electrostatic Discharge Charge Device Model (ESD-CDM) 500V JESD22-C101C P Endurance Test JESD22-A117 P Static Latch-up 85C, ± 200mA JESD 78A, P SEM Cross Section JESD26-A P Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 Document No.001-88089 Rev. *A ECN #4432506 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal3 A.F High Temperature Operating Life Early Failure Rate1 5,516 Devices 1 N/A N/A High Temperature Operating Life1, 2 Long Term Failure Rate 585,000 DHRs 0 0 .7 170 1 2 3 Assuming an ambient temperature of 55C and a junction temperature rise of 15C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 Where: EA =The Activation Energy of the defect mechanism. k = Boltzmann's constant = 8.62x10-5 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 11 Failure Rate 181 PPM 9 FIT Document No.001-88089 Rev. *A ECN #4432506 Reliability Test Data QTP #: 090809 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej ACOUSTIC, MSL3 CY7C60445 4810486 610828990 Malaysia-CA COMP 15 0 CY7C60445 4815537 610834184 Malaysia-CA COMP 15 0 CY7C60445 4835945 610847274 Malaysia-CA COMP 15 0 STRESS: AGE BOND STRENGTH CY7C60445 4827949 610844164 CML-R COMP 3 0 CY7C60445 4804681 610822808 Malaysia-CA COMP 3 0 CY7C60445 4836589 610852813 Malaysia-CA COMP 3 0 STRESS: DATA RETENTION, PLASTIC, 150C CY7C60445 4815537 610834184 Malaysia-CA 500 77 0 CY7C60445 4815537 610834184 Malaysia-CA 1000 77 0 CY7C60445 4835945 610847274 Malaysia-CA 500 78 0 CY7C60445 4835945 610847274 Malaysia-CA 1000 78 0 CY7C60445 4836589 610851914 CML-R 500 78 0 CY7C60445 4836589 610851914 CML-R 1000 78 0 CY7C60445 4810486 610830786 CML-R 168 77 0 CY7C60445 4815537 610835437 CML-R 168 77 0 CY7C60445 4827949 610844164 CML-R 168 79 0 CY7C60445 4835945 610848270 CML-R 168 78 0 CY7C60445 4836589 610851914 CML-R 168 76 0 STRESS: ENDURANCE STRESS: ESD-CHARGE DEVICE MODEL, (500V) CY7C60445 4810486 610830371 CML-R 500 9 0 CY7C60445 4815537 610834184 Malaysia-CA 500 9 0 CY7C60445 4835945 610847274 Malaysia-CA 500 9 0 N/A N/A COMP 1 0 STRESS: SEM CROSS SECTION CY7C60445 STRESS: Failure Mechanism 4810486 STATIC LATCH-UP (85C, 8.25V) CY7C60445 4835945 610847274 Malaysia-CA COMP 6 0 CY7C60445 4836589 610852813 Malaysia-CA COMP 6 0 CY7C60445 4837410 410.23.02 Promex 6 0 COMP Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 Document No.001-88089 Rev. *A ECN # 4432506 Reliability Test Data QTP #: 090809 Device STRESS: Fab Lot # Assy Lot # Assy Loc Duration Samp Rej ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY7C60445 4810486 610830371 CML-R 2200 8 0 CY7C60445 4815537 610834184 Malaysia-CA 2200 8 0 CY7C60445 4835945 610847274 Malaysia-CA 2200 8 0 STRESS: DYNAMIC LATCH-UP (125C, 8.5V) CY7C60445 4810486 610828990 Malaysia-CA COMP 5 0 CY7C60445 4815537 610834184 Malaysia-CA COMP 5 0 CY7C60445 4835945 610847274 Malaysia-CA COMP 5 0 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max) CY7C60445 4827949 610844164 CML-R 48 1002 0 CY7C60445 4815537 610835437 CML-R 48 1008 0 CY7C60445) 4835945 610847274 Malaysia-CA 48 1004 1 CY7C60445 4836589 610851747 Malaysia-CA 48 1004 0 STRESS: 4815537 610834184 Malaysia-CA 48 45 0 CY7C60445 4835945 610848270 CML-R 48 45 0 HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (125C, 5V, Vcc Max) CY7C60445 STRESS: Read NV Latch (1) HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE REGULATOR ON (150, 5V, Vcc Max) CY7C60445 STRESS: Failure Mechanism 4810486 610828990 Malaysia-CA 96 45 0 HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE (150C, 2.1V, Vcc Max) CY7C60445 4815537 610834184 Malaysia-CA 80 390 0 CY7C60445 4815537 610834184 Malaysia-CA 500 390 0 CY7C60445 4835945 610847274 Malaysia-CA 80 390 0 CY7C60445 4835945 610847274 Malaysia-CA 500 390 0 CY7C60445 4836589 610851747 Malaysia-CA 80 390 0 CY7C60445 4836589 610851747 Malaysia-CA 500 390 0 (1) Destroyed during failure analysis Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 11 Document No.001-88089 Rev. *A ECN # 4432506 Reliability Test Data QTP #: 090809 Device STRESS: Fab Lot # Assy Lot # Assy Lot Duration Samp Rej HIGH TEMP STEADY STATE LIFE TEST (150C, 2.1V) CY7C60445 4810486 610828990 Malaysia-CA 80 77 0 CY7C60445 4810486 610828990 Malaysia-CA 168 77 0 CY7C60445 4815537 610834184 Malaysia-CA 80 77 0 CY7C60445 4815537 610834184 Malaysia-CA 168 77 0 CY7C60445 4835945 610848270 CML-R 80 77 0 CY7C60445 4835945 610848270 CML-R 168 77 0 STRESS: LOW TEMPERATURE DYNAMIC OPERATING LIFE, -30C, 2.1V CY7C60445 4815537 610835437 CML-R 500 77 0 CY7C60445 4835945 610848270 CML-R 500 77 0 STRESS: Failure Mechanism HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3) CY7C60445 4810486 610828990 Malaysia-CA 128 77 0 CY7C60445 4815537 610834184 Malaysia-CA 128 77 0 CY7C60445 4815537 610834184 Malaysia-CA 256 77 0 CY7C60445 4835945 610847274 Malaysia-CA 128 77 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY7C60445 4810486 610828990 Malaysia-CA 168 77 0 CY7C60445 4810486 610828990 Malaysia-CA 333 77 0 CY7C60445 4815537 610834184 Malaysia-CA 168 77 0 CY7C60445 4815537 610834184 Malaysia-CA 288 77 0 CY7C60445 4835945 610847274 Malaysia-CA 168 77 0 CY7C60445 4835945 610847274 Malaysia-CA 288 77 0 STRESS: TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY7C60445 4810486 610828990 Malaysia-CA 500 77 0 CY7C60445 4810486 610828990 Malaysia-CA 1000 77 0 CY7C60445 4815537 610834184 Malaysia-CA 500 77 0 CY7C60445 4815537 610834184 Malaysia-CA 1000 77 0 CY7C60445 4835945 610847274 Malaysia-CA 500 77 0 CY7C60445 4835945 610847274 Malaysia-CA 1000 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No.001-88089 Rev. *A ECN # 4432506 Reliability Test Data QTP #: 091801 Device STRESS: Fab Lot # Assy Lot # Assy Lot Duration Samp Rej AGED BOND CY7C60445 4909973 610916428 Malaysia-CA COMP 3 0 CY7C60445 4909973 610921200 Malaysia-CA COMP 3 0 CY7C60445 4909973 610916429 Malaysia-CA COMP 10 0 CY7C60445 4909973 610921200 Malaysia-CA COMP 10 0 Malaysia-CA COMP 5 0 STRESS: STRESS: BALL SHEAR CONSTRUCTIONAL ANALYSIS CY7C60445 STRESS: 4909973 610916428 HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE (150, 2.1V, Vcc Max) CY7C60445 4909973 610916428 Malaysia-CA 48 748 0 CY7C60445 4909973 610921200 Malaysia-CA 48 750 0 STRESS: ESD-CHARGE DEVICE MODEL (500V) CY7C60445 4909973 610916427 Malaysia-CA COMP 9 0 CY7C60445 4909973 610921200 Malaysia-CA COMP 9 0 STRESS: ESD-HUMAN BODY CIRCUIT PER JESD22, METHOD A114-B, (2,200V) CY7C60445 4909973 610916427 Malaysia-CA COMP 8 0 CY7C60445 4909973 610921200 Malaysia-CA COMP 8 0 STRESS: Failure Mechanism HI-ACCEL SATURATION TEST (130C, 85%RH, 5.25V), PRE COND 192 HR 30C/60%RH (MSL3) CY7C60445 4909973 610916428 Malaysia-CA 128 76 0 CY7C60445 4909973 610921200 Malaysia-CA 128 77 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH), 15 Psig, PRE COND 192 HR 30C/60%RH (MSL3) CY7C60445 4909973 610916428 Malaysia-CA 168 77 0 CY7C60445 4909973 610916428 Malaysia-CA 288 77 0 CY7C60445 4909973 610921199 Malaysia-CA 168 77 0 CY7C60445 4909973 610921199 Malaysia-CA 288 77 0 Malaysia-CA COMP 6 0 STRESS: STATIC LATCH-UP 85C, 5.25V, ±200mA) CY7C60445 STRESS: 4909973 610916427 TC COND. C -65C TO 150C, PRE COND 192 HRS 30C/60%RH (MSL3) CY7C60445 4909973 610916428 Malaysia-CA 500 77 0 CY7C60445 4909973 610916428 Malaysia-CA 1000 77 0 CY7C60445 4909973 610921199 Malaysia-CA 500 77 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No.001-88089 Rev. *A ECN # 4432506 Document History Page Document Title: QTP#090809: enCoRe Device Family "CY7C604XX" S8DI-5R Technology, Fab 4 Document Number: 001-88089 Rev. ECN Orig. of No. Change ** 4039067 HSTO *A 4432506 HSTO Description of Change Initial Spec Release Qualification report published on Cypress.com is documented on memo HGA-958 and was transferred to qualification report spec template. Deleted Cypress obsolete referenced spec in Major package qualification details. Updated package availability based on current qualified test & assembly site. Deleted Cypress reference Spec and replaced with Industry Standards in Reliability Test Performed Table. Align qualification report based on the new template in the front page Distribution: WEB Posting: None Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11